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© 2021 Toshiba Electronic Devices & Storage Corporation Confidential TC358840XBG / TC358870XBG Process Change Notice of wafer-fab site Jan 26, 2021 System Devices Customer Quality Group Semiconductor Quality Div. Digital Product Dept. System Devices Div. Toshiba Electronic Devices & Storage Corporation SMC-OP20B0134-SM1

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© 2021 Toshiba Electronic Devices & Storage Corporation Confidential

TC358840XBG / TC358870XBGProcess Change Notice of wafer-fab site

Jan 26, 2021

System Devices Customer Quality Group

Semiconductor Quality Div.

Digital Product Dept.

System Devices Div.

Toshiba Electronic Devices & Storage Corporation SMC-OP20B0134-SM1

2© 2021 Toshiba Electronic Devices & Storage Corporation Confidential

Summary

(1) Overview

Toshiba has outsourced wafer-fab process of the target products to Sony Semiconductor

Manufacturing Corporation (hereinafter referred to as “SCK”) in Oita Japan since 2016. However,

considering stable and long term supply, Toshiba has decided to change wafer-fab site from SCK to

Samsung Foundry (hereinafter referred to as “SF”).

(2) Changes and timing

Regarding changes and its timing, please refer following table.

(3) Target Products

TC358840XBG / TC358870XBG

ProcessChanges

Timing DetailFrom To Category

40nmSCK Japan(Sony Semiconductor

Manufacturing Corporation)

SF Korea

(Samsung Foundry)Wafer-fab site change Mar. 2022

This change will involve change

in 5M1E.

Wafer-fab process technology

and design will be unchanged.

3© 2021 Toshiba Electronic Devices & Storage Corporation Confidential

Contents

Overview

Changes and evaluation plan

01

02

4© 2021 Toshiba Electronic Devices & Storage Corporation Confidential

01Overview

Outsourcing, Switching plan

5© 2021 Toshiba Electronic Devices & Storage Corporation Confidential

Wafer-fab site

Wafer-fab site will be changed from SCK(Japan) to SF(Korea) from Apr. 2022

Samsung Foundry

SF : Samsung Foundry

Sony Semiconductor Manufacturing Corporation

After

Apr. 2022

Incheon

Seoul

Giheung

SamsungFoundry

Wafer-fab Wafer test Assembly Final test

Change target No change No change No change

6© 2021 Toshiba Electronic Devices & Storage Corporation Confidential

Overview of Samsung Foundry(=SF)

Location Giheung, Korea

Establishment April. 2004

Site area 50,710m2

Employees 2,578

MP start

(40nm process)July, 2009

Capacity

(40nm process)

Over 30k wafer

per month

General information

S1 Fab

2009 2010 2011 2012 ・・・ 2019 2020 2021

Process setup

(consumer)

Process setup

Proto/EV Production

Complete

History & Setup status for automotive products

Process porting was started from 2009, as a backup manufacturing

line for Toshiba standard 40nm process, and completed in 2011.

Production has been continued as of today for consumer products.

(Total production quantity is over 85k wafers as of January 2020).

Process porting means tune-up of the manufacturing process

without any design change so that it can be the equivalent process

to the original one.

Toshiba can transfer the 40nm product without design change.

7© 2021 Toshiba Electronic Devices & Storage Corporation Confidential

What is the “Process porting” ?

Process is tuned to the original one without any change on circuit and layout.

Product design

CAD process

Mask make

Wafer make

Wafer test

Go to assembly step

Definition of process porting Tune up the manufacturing process of other site to be the same

electrical characteristics as Toshiba original manufacturing process

without any product design change.

Changes

Chip size, electrical characteristics and test pattern for outgoing test

are not changed because of no change in circuit and design. However,

5M1E will be changed because manufacturing process, material and

equipment are changed to the new wafer-fab site’s standards. Also,

photo masks will be re-made to adapt to the lithography equipment

on the process porting site.

8© 2021 Toshiba Electronic Devices & Storage Corporation Confidential

Item Before after

TSB name TC358870XBG(EL,H2) TC358870XBG(XE,H2)

Customername

Label

Product identification for TC358870XBG(EL,H2)

Product and label can be identified.There is no mixing with existing products in the same package.

HAF

HAF

(XE,H2)KOREA

Change:

9© 2021 Toshiba Electronic Devices & Storage Corporation Confidential

Production switching schedule

Your cooperation including internal evaluation will be appreciated to

implement the changeover as scheduled.

[TC358840XBG/ TC358870XBG schedule]

LTB: Until End of September 2021, LTS: Until End of March 2022

ES: From July 2021, MP: From March 2022

2019(CY) 2020(CY) 2021(CY) 2022(CY)

3Q 4Q 1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q

Current

Production

New

Production

Current production(with SCK wafer)

End of wafer-fab st SCK

New production

(with SF wafer)Prototyping ES

Reliability

Fix LTB Q’ty

TentativeLTB Q’ty

MP

10© 2021 Toshiba Electronic Devices & Storage Corporation Confidential

02Change Point and evaluation items involved in This Site Change

11© 2021 Toshiba Electronic Devices & Storage Corporation Confidential

Change Point Involved in This Change

We will proceed with evaluation focusing on the change point involved in this change.

■Comparison of manufacturing site (Change point analysis by 5M1E)

5M1E Change point between SCK and SF Evaluation items

Man Operators at SCK will be changed to the ones at SF. Operator certification

Machine Machines at SCK will be changed to the ones existing at SF. Electrical characteristic, Product reliability

Measurement Measurement tool will be changed. Electrical characteristic

MethodProcess flow will be changed.

Equivalent process performance will be secured by process porting.Electrical characteristic, Product reliability

Material Material will be changed to the one tried-and-true at SF. Electrical characteristic, Product reliability

Environment Environment will be changed to the one tried-and-true at SF. Clean room Environment

Evaluation items Change Change point between SCK and SF

Product specification(Electrical items) No No change in Product specification.

IC chip (Design rule, Circuit design, Chip size) No No change in Design rule, Circuit design, Chip size.

Quality assurance, Failure analysis organization No No change in Quality assurance, Failure analysis organization.

■Change point in product

12© 2021 Toshiba Electronic Devices & Storage Corporation Confidential

Reliability Test Plan

No Item Test Condition Sample size Criteria

1 Pre-conditioning [MRT]*1Bake(125deg.C/24h), 30deg.C/70%RH/216h,

Air/IR Reflow 260deg.C max, 4times.25pcs/3Lot 0 failure

2 Temperature cycle [TCT] *1 -55deg.C~125deg.C/700cyc 25pcs/3Lot 0 failure

3High humidity and high pressure

[UHAST] *1110deg.C/85%/264h 25pcs/3Lot 0 failure

4 High temperature storage [HTS] *1 150deg.C/1000h 25pcs/3Lot 0 failure

5High temperature and high humidity

operation [THB] *185deg.C/85%/1000h 25pcs/3Lot 0 failure

6 ESD[HBM] +/-2000V 3pcs/1Lot 0 failure

7 ESD[CDM] +/-500V 3pcs/1Lot 0 failure

8 ESD[MM] +/-200V 3pcs/1Lot 0 failure

9 Latch-Up[LU] (Current pulse) +/-50mA@RT 3pcs/1Lot 0 failure

10 Latch-Up[LU](Power supply overvoltage) Maximum rating 3pcs/1Lot 0 failure

We will proceed the following evaluation

*1: Acting for the results of representative products

13© 2021 Toshiba Electronic Devices & Storage Corporation Confidential

Conclusion

- For this site change, we will work in cooperation with our outsourcer Samsung

Foundry.

- We will determine whether or not to implement the change based on the results

of facilities setup verification and product evaluations at the new site, and then

inform you about our conclusion for the changeover.

We will focus on the facilities/product setup to ensure continuous supply of

products that you can use without any concern.

- If you have question and/or request regarding this change, you are kindly

requested to inform our sales representative in charge.

You are also requested to consider and provide with your required quantities of

the ongoing product.

14© 2021 Toshiba Electronic Devices & Storage Corporation Confidential