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第三章 集成门电路与触发器. 第 三 章 集 成 门 电 路 与 触 发 器. 第三章 集成门电路与触发器. 随着微电子技术的发展,人们把实现各种逻辑功能的元器件及其连线都集中制造在同一块半导体材料小片上,并封装在一个壳体中,通过引线与外界联系,即构成所谓的 集成电路块, 通常又称为 集成电路芯片。 集成门电路和触发器等逻辑器件是实现数字系统功能的物质基础。. 采用集成电路进行数字系统设计的 优点: 可靠性高、可维性好、功耗低、成本低等优点,可以大大简化设计和调试过程。. 第三章 集成门电路与触发器. 本章知识要点 - PowerPoint PPT Presentation
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3.1 .
1.
2. (MOS): -(Metel Oxide Semiconductor Field Effect Tra-nsister)
-TTL(Transistor Transistor Logic) (Emitter Coupled Logic) I2L(Integrated Injection Logic) TTL MOS PMOS( P-channel Metel Oxide Semiconductor) NMOS(N-channel Metel Oxide Semiconductor) CMOS(Complement Metal OxideSemiconductor) CMOS
SSI MSI LSI VLSI 1. SSI (Small Scale Integration ) : 10 (100) 2. MSI (Medium Scale Integration ) : 10 99 (100999) 3. LSI (Large Scale Integration ) : 100 9999 (100099999) 4. VLSI (Very Large Scale Integration) : 10000 (100000)
3.2 MOS
()
3.2.1 () 1. ( UTH ) (0.1V0.5V) UF UTH IF 0 UF = UTH IF UF UTH (0.3V0.7V) IF
2 UR IR IS
R
IRUBR
a(b)(c)
. UF UR
0t1 UFIF UF /R t1 UF URIF IR UR /Rtstt0.1IR( IS) ts tt tre=ts+tt
tre UF PNPN UF URPN P NN PIR IR UR /R ts PN tt IR ISPn
2. PNIF UF/RUFIF
3.2.2 PNPN3 NPN
3. uB 0PNiB IBS() UCC/Rc ,iC = ICS()UCC/Rc1. uB0PNiB0,iC 0,uCE UCC 2. uB0iC =iB
a iC uCE (a)IC UCE b (a)
1 ton ui-U1 +U2td tdiCiC90%tr ton =td + tr 2. toff ui+U2-U1ICSts 0.9ICS0.1ICStf toff =ts + tf tontoff
3.2.3 MOS. MOSMOSuGS NMOS
uGSUTMOSIDS0uDS UDDMOS (b) uGSUTMOSiDS=UDD/(RD + rDS)rDS MOS UDS=UDD rDS /(RD+rDS), rDSRDuDS 0VMOS (c)
. MOS NMOSMOS 1. uiMOSUDDRDCL1 = RDCL 2. uiMOSCLrDS2 rDSCL rDSRD
MOSrDSrCESRDRCMOSMOS MOSCMOS
CMOSCMOS
3.3 TTLCMOS
3.3.1 . (a)(b) UBuiTDQUQ( 3. 2V ) ui3.2VT uO = UCES 0.3Vui0.3V,TuOUQDQuO=2.5V+0.7V=3.2V
1. . IL IL
ILTIC =IRc+IL, IL IC IL IBS ILIb IBSTuO uce IbIBSILmax ILmax TuO(3.2V)ILIRcUQ
2.
Ic 0 IRc= IL + IQuo = 3.2V IRc =(UCC - 3.2V)/Rc ILIQIL IRcIQ 0IL IRc Rcu oIRc ILmax IRc (UCC - 3.2V)/Rc TIL T uo 0.3VIQ= 0, Irc = I L + Ic ILIcILIRc
3.3.2 TTL TTL(Transistor Transistor Logic)-
TTL TTLTTL
. TTL
T1R1 T2R2R3 T3T4T5R4R51. (1) TTL
(2) T1 T2T3T5 T3T4T5 (3.6V)UccR1T1T2T2T2R3 T5 (0.3V) T1ub1=ubc1+ube2+ube5 2.1VT2uc2 = uces2+ube50.3V+0.7V1V,T3T3T4ub4= ue3=uc2-0.7V=0.3V,T4
(0.3V)T1Ub1=0.3V+0.7V=1VT1T2T5T2T5T2T5 T2UCCR2T3T4(3.6V)
2. TTL (2) VOLVoLVOL0.3VVOL0.4V,VSL=0.4V (1) VOH VOHVOH3.6VVOH2.4VVSH=2.4V
(3) VO N VONVSL VONVON1.8VVON (4) VOFF VOFFVSH VOFF VOFF0.8VVOFF
(5) Ni Ni Ni258Ni (7) IiS : IIs IiSIiS1.6mA (6) NoNONo8
(8) IiHIiH IiH50A (9) tpd: tpd () tpdLtpdH tpd = ( tpdL+ tpdH )/2 tpd 10ns 40ns
(10) PICCUCC
PONPOFF PONPOFF
P =(PON + POFF)/2 P50mW,74H22mW
3. TTL TTLTTL74007420 7400 (a)7420 (b) UCCGNDNC
. TTL TTL(OC) (TS) (1) (a)TTL1. TTL
(2) TTL
TTL2474027402
(3) T1T1 TTL
TTL7451
2. (1) (OC) (Open Collector GateOC OCTTL
RLUCC
""
""
(2) (TS) (Three state Gate)TS !
1 n10 n
EN=1G1G2D1 EN=0G2G1D2
3.3.3 CMOS MOSTTL MOS
PPMOS NNMOS PMOSNMOSCMOS CMOSCMOS
. CMOS NMOSTNPMOSTPCMOS UDDTNUTNTPUTP UDDUTN +|UTP|5AUiUTNTNTP UoUDD BUi UTNTN UOCUiUDD /2TNTP UODUiUDD/2UOEUiUDD|UTP|TP TNUO0 Ui=0VTNTPUOUDDUi = UDDTNTPUO0V""
CMOS(W)
.CMOS NMOSPMOSCMOS PMOSNMOS ABTN1TN2TP1TP2F ABTN1 TN2TP1TP2F ""
. CMOS NMOSPMOSCMOSNMOSPMOS ABTN1TN2TP1TP2F AB TN1TN2TP1TP2F ""
x`. CMOS CMOSNMOSTNPMOSTP
. CMOS
MOSMOS
3.3.4 101001 10 01.
.
FABF = AB
3. 4
3.4.1 R-S R-SR-S. R-S 1. (a)(b) R0S1
2.
R-S "d"
RS0R + S = 1 () Q(n+1) QRS
.R-S 1.(a)(b) R=1,S=1 R=1,S=0,0 R=0,S=1,1R=0,S=0
R-S R-SRS
3.4.2
()
()
. R-SR-S(a)b 1. G1G2R-SG3G4
2 R=0, S=0G3G41 R=0, S=1G3G4101 R=1, S=0G3G4010 R=1S=1G3G40 C=0RS1 C=1RS R-S
R-S RS1 "" R-SCRSCRS3 R-SR-S C(C=1)
C1RS R-S R-S
. D R-SRS1R-S(a)D (b) (C=1)DR-SR-S0110
C=0DG3G41 C=1 D=0G41G300D=1G40G311 DD Q(n+1) = D D
DD! ""DD
D (a)(b) (C=0)D(C=1)D
D
D
DD DDD1D2D3
Q(n+1) = D1 D2 D3 D
. J-K R-S1
(2) (C=1)JK J=0,K=0 J=0,K=100 1 0JK =010 J=1,K=00 111 JK =101 J=1,K=101 10 JK =11 (1) (C=0)J-K
J-K J-KJ-K
J-K(a)(b) J-KR-S RDSD01()
() ()() ""
J-KJ-K
J-KJK
. T TJ-KJKTT(a)(b)
T=1 T=0
TT T(a)(b)T
3. 4. 3 TTLJK . 1. IE IE 2. IiL IiL J-KJK01
3. IiH (RDSDJKC)IiH
. 2. (t CPLHt CPHL) 01tCPLH10tCPHL tCPHLtCPLH 3. RDSD(t RLH t RHLt SLH t SHL) 001tRLH10tRHL101t SLH10tSHL 1. fmax fmax