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8. (c) (a) (b) (c) 21 An n-channel silicon JFET has donor concentration of 2 x 10 / m and a channel width of 4 gm. If the dielectric constant of silicon is 12, find the pinch-off

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Page 1: 8. (c) (a) (b) (c) 21 An n-channel silicon JFET has donor concentration of 2 x 10 / m and a channel width of 4 gm. If the dielectric constant of silicon is 12, find the pinch-off

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Page 2: 8. (c) (a) (b) (c) 21 An n-channel silicon JFET has donor concentration of 2 x 10 / m and a channel width of 4 gm. If the dielectric constant of silicon is 12, find the pinch-off

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Page 3: 8. (c) (a) (b) (c) 21 An n-channel silicon JFET has donor concentration of 2 x 10 / m and a channel width of 4 gm. If the dielectric constant of silicon is 12, find the pinch-off

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Page 4: 8. (c) (a) (b) (c) 21 An n-channel silicon JFET has donor concentration of 2 x 10 / m and a channel width of 4 gm. If the dielectric constant of silicon is 12, find the pinch-off

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Page 5: 8. (c) (a) (b) (c) 21 An n-channel silicon JFET has donor concentration of 2 x 10 / m and a channel width of 4 gm. If the dielectric constant of silicon is 12, find the pinch-off

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Page 6: 8. (c) (a) (b) (c) 21 An n-channel silicon JFET has donor concentration of 2 x 10 / m and a channel width of 4 gm. If the dielectric constant of silicon is 12, find the pinch-off

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