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8/3/2019 0TC Voltage Ref
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1
A CMOS Voltage Reference Based on Weighted
Difference of Gate-Source Voltages between PMOS
and NMOS Transistors for Low Dropout Regulators
Ka Nang Leung and Philip K. T. Mok
Department of Electrical and Electronic Engineering
The Hong Kong University of Science and Technology
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2
Outlines
• Brief Review on Conventional MOS VoltageReference Based on Threshold Voltages
• Proposed CMOS Voltage Reference
• Conclusions
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3
Conventional MOS Voltage ReferenceBased on Threshold Voltages
2 th1thref V V V -
[1] B.-S. Song and P. R. Gray, “Threshold-Voltage Temperature Drift in Ion-Implanted MOS
Transistors”, IEEE Journal of Solid-State Circuits, vol. SC-17, pp. 291-298, Apr. 1982.
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Requirements of Conventional Reference
• Good matching of TC of Vth for low-TC Vref èRequire extensive process controls
èExpensive
• Require NMOS (PMOS) transistors with different Vth
èRequire multi-threshold-voltage process or
depletion-enhancement transistor process
èNot compatible in standard CMOS process
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General Idea of Proposed CMOS Reference
NMOS ThresholdNMOS Threshold
Voltage Generator Voltage Generator
PMOS ThresholdPMOS Threshold
Voltage Generator Voltage Generator
ScalingScaling
Factor k Factor k
S+
TempTemp
VREF VREFTempTemp
|VTHP||VTHP|
THPTHNref VkVV -
TempTemp
VTHN VTHN
Controlled by circuit
parameters
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Core Circuit
VREF
PMOS
NMOS
R1
R2
IB
VCC
ú
úúú
û
ù
ê
êêê
ë
é
-
÷ø
ö
çè
æ
÷ø
öçè
æ
÷ø
öçè
æ+
÷ø
ö
çè
æ
ú
û
ùê
ë
é-÷
ø
öçè
æ+
-÷ø
öçè
æ+
1
L
W
L
W
R
R 1
L
W
C
I 2
V V
R
R 1
V V R
R 1V
N N
P P
2
1
P OX P
B
THP THN 2
1
)PMOS ( GS )NMOS ( GS 2
1REF
m
m
m
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Proposed CMOS Voltage Reference
GSpGSn2
1ref V V
R
R 1V -÷
ø
öçè
æ+
• Implemented in 0.6-mm CMOS process
• Simple and OpAmp-less structure
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Minimum Supply Voltage
)sat ( 5 DS o
GSn2
1mins V C 0 @ V
R
R 1V +÷
ø
öçè
æ+
• Vsmin = 1.4V(Vthn » |Vthp| » 0.9V@0oC)
• Sub-1-V supply
voltage is possible for
Vth < 0.6V
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9
Design Considerations
)mobilitiesand current ( F )voltagethreshold ( F
T
V
T
V
R
R 1
T
V
2 1
GSpGSn
2
1ref
+
¶
¶-
¶
¶÷ø
öçè
æ+
¶
¶
linear temp dependence non-linear temp dependence
1R
R
vthn
vthp
2
1-
b
b
2
p
n2
vthn
vthp
o
r
o p
on
n
p
2 2
1
T
T
)T (
)T (
L
W
L
W n p
÷ø
ö
çè
æ+÷
ø
öçè
æ
÷ø
öçè
æ
=÷ø
öçè
æ
÷ø
öçè
æ-
m
m
b
b
b
b
b
m
mm
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Experimental Results
With optimum resistor ratio - TC = 24 ppm/oC
312.3
312.4312.5
312.6
312.7
312.8
312.9
313.0
313.1
313.2
313.3
0 20 40 60 80 100
Temperature (degree C)
R e
f e r e n c e v o l t a g e ( m
V )
Vs = 1.40 V Vs = 2.00 V Vs = 3.00 V
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Resistor Ratio Sensitivity
1
R
R
vthn
vthp
2
1-
b
b
Typically, 0 < R1/R2 < 1 since bvthp is close to bvthn
(~1.2 to 4 mV/K)
So, the error on the resistance ratio in the proposeddesign is better than that in bandgap reference since
2
1
2
1
2
1
2
1
R
R R
R
R
R 1
R
R
÷ø
ö
çè
æ
<<
+
÷ø
ö
çè
æ D
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Comparison with Bandgap Reference
-100%
0%
100%
200%
300%
400%
500%
600%
1% 2% 3%
Resistor Ratio Variation
V r e
f T C
V a r
i a t i o
n
BGVEF CMOSVREF
Comparison on Resistor Ratio Variation
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Experimental Results on Change of R Ratio
312.3
312.4
312.5
312.6
312.7
312.8
312.9
313.0
313.1
313.2
313.3
0 20 40 60 80 100
Temperature (degree C)
R e f e r e n c e v o l t a g
e ( m V )
Vs = 1.40 V Vs = 2.00 V Vs = 3.00 V
331.5
332.0
332.5
333.0
333.5
334.0
334.5
0 20 40 60 80 100
Temperature (degree C)
R e f e r e n c e v o l t a g e
( m V )
Vs = 1.40 V Vs = 2.00 V Vs = 3.00 V
With optimumresistor ratio
TC = 24 ppm/oC
Resistor ratio off by6.23%
TC = 50 ppm/oC
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Summary of the Measurement Results
~ ±0.03%/V (typical)±0.17%/V (max)
Line regulation
~ 25 ppm/oC (typical)
62 ppm/oC (max)
TC (0 to 100 oC)302.24±12 mVReference voltage
9.7 mA (max)Supply current
1.4 to 3 VSupply voltage
Measured results of 11 samples of 2 runs
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Applications of the Proposed Voltage Reference
• Low Supply Voltage (down to 1.5V)• True CMOS Technology
• Output Voltage is adjusted by resistor network
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Conclusions
A CMOS Voltage Reference is proposed• Compatible and reproducible in standard CMOStechnology
• Simple and OpAmp-less structure
• Temperature dependence is controlled by circuitparameters instead of requiring extensive processcontrols
• Low sensitivity on the resistor ratio
• Small size
• Good TC performance for power converter applications