100602 ham news-01-2010 RZ - Hamamatsu Photonics · Content Highlights 2 News 2010 Vol. 1 ELECTRON TUBE PRODUCTS 25 Side-on PMT R9876, R11540 SOLID STATE PRODUCTS 12 CCD image sensors

New silicon infrared enhanced photodiodes for scientifi c measurement and YAG laser monitoring

NEWS 2010

01

ORCA-D2Dual CCD camera

SYSTEMS PRODUCTS PAGE 34

CCD image sensorsS11510 series

SOLID STATE PRODUCTS PAGE 12

Side-on PMTR9876, R11540

ELECTRON TUBE PRODUCTS PAGE 25

SOLID STATE PRODUCTS PAGE 10

Content

Highlights

News 2010 Vol. 12

ELECTRON TUBE PRODUCTS 25 Side-on PMT R9876, R11540

SOLID STATE PRODUCTS 12 CCD image sensors S11510 series

SYSTEMS PRODUCTS 34 ORCA-D2 Dual CCD camera

04 Company News

06 Application Report

SOLID STATE PRODUCTS

08 IR-enhanced Si devices

10 IR-enhanced Si PIN photodiodes

11 IR-enhanced Si APDs

12 IR-enhanced CCD image sensors

13 CCD image sensors

14 Back-thinned CCD image sensors

15 Driver circuits for CCD image sensors

16 InGaAs area image sensor

17 High resolution encoder module

18 Mini-spectrometer

LASER PRODUCTS

21 THz antenna module

22 High power laser line-up

ELECTRON TUBE PRODUCTS

23 Small package PMT

24 Head-on photomultiplier tube modules

25 Side-on PMT

26 GaAsP and GaAs photomultiplier tube modules

27 Photomultiplier tube power supplies

28 Amplifi er unit

29 Quartz fl ow cells for fl ow cytometry

30 UV area curing unit

31 Microfocus X-ray Sources

32 S2D2 light source

SYSTEMS PRODUCTS

33 ORCA-Flash2.8

34 ORCA-D2

35 FDSS/µCELL

36 Temperature measurement kit for THEMOS series

SERVICE

37 Fax reply

38 Exhibitions 2010

39 Hamamatsu Photonics Europe

Low noise: 3 electrons (r.m.s.) High resolution: 2.8 megapixel High speed readout: 45 frames/seconds (1920 x 1440) High dynamic range: 4500:1

ORCA-Flash2.8Digital camera with CMOS image sensor

SYSTEMS PRODUCTS PAGE 33

3News 2010 Vol. 1

News 2010 Vol. 14

Company News

New President and CEO, Hamamatsu Photonics K.K., Japan

We are delighted to introduce Mr. Akira Hiruma, the new President and CEO of Hamamatsu Photonics K.K., Japan.

Mr. Hiruma has worked at Hamamatsu Photonics for more than 26 years, since graduating from Rutgers University, USA, with a major in computer sciences. For the last 5 years he held the post of President, Hamamatsu Corporation, USA and was appointed President of Hamamatsu Photonics K.K. in December 2009. He succeeds Mr. Teruo Hiruma who has taken the position of Chairman and Board Member.

Message from the President:

We, the members of Hamamatsu, consider ourselves a research and development company. As a company, we believe that the only way to achieve sustainable growth is to maintain our technological advantages. It is our job and passion to advance photonic technologies.

Hamamatsu has been working with the Photon for more than 50 years. We have established ourselves as the top company of photoelectron conversion technologies in the world. However, we have yet to fully grasp the nature of the Photon and its potential. The more you study, the more you realise how little you know about the Photon and its applications. That is why we continue to move ahead vigorously with basic research and apply what we learn to photonics.

We realise that pursuing the knowledge of photonics technologies alone, by ourselves, is like reaching for the stars with a ladder. Thus we will work together with colleagues around the world, be they researchers, customers or stockholders, who share our passion and the belief that understanding photonic technologies will lead to broader applications and also generate new industries for the advancement of humankind.

Communication with customers at designer level is important for us. This will facilitate not just better understanding of our customers needs, but it also enables the possibility of giving our customers suggestions for better usage of our devices. This will shorten the design cycle of both ours and customers. So, we would like to improve local technical knowledge by creating design centers at key locations.

Our researchers are busy at their lab trying to unveil the secret of light and creating new devices, but it is also important to share their advancement with other researchers in the world. So, we will encourage our researchers to go out more and share their knowledge among the colleagues in the world.

Mr. Akira Hiruma, President and CEO of Hamamatsu Photonics K.K.

News 2010 Vol. 1 5

Hamamatsu Microfocus X-ray Sources (MFX) wins Prism Award

Hamamatsu Photonics is a proud recipient of a Prism Award, given in recognition of their Microfocus X-ray Sources (MFX). The Prism Award for photonics innovation is an international competition for companies that realise innovative products that break conventional ideas, solve problems and improve life with photonics technology. This prestigious award was presented to Hamamatsu Photonics during a gala ceremony held during the SPIE Photonics West exhibition in San Francisco, USA and was attended by approximately 400 leaders from the photonics industry.

Hamamatsu Photonics produce a wide range of Microfocus X-ray Sources, that are ideal for the non-destructive inspection of metallic components used in automotive, industrial, aerospace and electronic industries. The winning MFX Source is a 160 kV open type featuring a 0.25 µm resolution and high output intensity. A small focal point prevents blurring of X-ray images and delivers a sharp enlarged image.

The MFX Sources are available in either open or sealed confi gurations consisting of an X-ray head, power supply, cooler and control electronics. Open type sources are capable of spot sizes of < 1 µm enabling a magnifi cation of up to 1000 times. The output power of these sources is controlled by adjusting the X-ray tube voltage. This can range from 20 kV to 230 kV for some open type MFX Sources (giving a maximum power output of 240 W), which is useful for the detection of different materials, from lower density plastics to metallic components.

for Photonics Innovation

160 kV open type Microfocus X-ray Sources L10711 series

News 2010 Vol. 16

Application Report

Fluorescence spectroscopy on conjugated polymer nanoparticles

Nanoparticles of luminescent conjugated polymers, dispersed in water as a continuous phase, are fi nding increasing interest in materials science and biological systems. For example, they may contribute to resolve some key challenges in the processing and structuring of conjugated polymers, particularly to multilayer devices.1 In this context, their compatibility with standard printing techniques is attractive. Because of their high degree of dispersion, nanoparticle dispersions are useful for the preparation of nanocomposites. Recently, the potential of nanoparticles of conjugated polymers for cell imaging has been recognized.2,3,4

For electroluminescence as well as photoluminescence, ability to adjust the emission wavelengths is very desirable. An elegant approach is the covalent incorporation of fl uorescent dyes during polymerization.5

The investigation of the optical properties of these nanoparticle dispersions requires a spectrometer, that is capable of reliably measuring fl uorescence spectra and quantum yields of samples, which scatter light by contrast to common solution samples. Commonly fl uorescence quantum yields are calculated from spectra of reference dyes. This technique fails for light scattering samples, as a reference sample with identical scattering properties would be needed.

Therefore the direct measurement of fl uorescence quantum yields is attractive. For these purposes the Hamamatsu Absolute PL Quantum Yield Measurement System C9920-02 consisting of an integrating sphere, which is connected by glass fi bres to a xenon lamp with monochromator and a cooled BT-CCD spectrometer, was used. This setup allows for fast and easy measurement of absolute fl uorescence spectra and fl uorescence quantum yields. Due to the integrating sphere also quantum yield determination of scattering samples,

FIGURE 2. Absorption (dashed) and fl uorescence (solid line) spectra of aqueous dispersion (green), chloroform solution (black), and thin fi lm (red) of poly-1 (λexe = 410 nm). Inserts: photographs of polymer solution (left) and nanoparticle dispersion (right).

such as nanoparticle dispersions, is possible. For quantum yield determination fi rst a spectrum of a clear reference sample and then of the fl uorescent sample is measured. Quantum yields are calculated from both spectra by the spectrometer software according to the method of Kawamura et al.6

Various poly(arylenediethynylene)s were studied with respect to their optical properties (Figure 1). Fluorescence spectra and quantum yields of the nanoparticle dispersions and for comparison, polymer solutions and thin polymer fi lms were recorded in the integrating sphere. Further details concerning synthesis and spectroscopy of these nanoparticles can be obtained from ref [2].

Most notably, emission of the nanoparticles is redshifted by comparison to polymer solutions. This is particularly pronounced for the polyfl uorene poly-1 (Figure 2), with a Δλ = 74 nm red-shift of the fl uorescence maximum of the nanoparticles (λ = 502 nm) vs. a corresponding polymer solution (λ = 428 nm). Such an effect is well-known from studies of bulk conjugated polymers. By comparison to the emission maximum observed in solution (0-0 transition), energy transfer from the excited state to lower band gap chromophores in the solid state results in longer wavelength fl uorescence emission. The fl uorescence quantum yield of 65% in the chloroform solution decreases to 11% or 13% in the nanoparticles or the thin fi lm, respectively. Interchain interactions (e.g. aggregate formation by π-stacking) in the solid have also been reported to promote radiationless decay, FIGURE 1. Chemical structures of polymers investigated.

7News 2010 Vol. 1

at the expense of fl uorescence quantum yields.7,8 Overall, the fl uorescence properties in terms of emission energy and quantum yields of the nanoparticles were found to resemble the bulk solid, as represented by the solution cast fi lm sample (Figure 2).

Covalent incorporation of fl uorescent dyes into poly-2 by copolymerization allows an emission colour adjustment of the conjugated polymer nanoparticles. An effective energy transfer to polymer-incorporated dye is already evident from the appearance of the nanoparticle dispersions to the eye under UV light (Figure 3). Fluorescence spectroscopy of copolymer nanoparticle dispersions reveals the effi ciency of energy transfer to the dye repeat units (Figure 3). Emission from the latter increases with increasing dye incorporation.Copolymerization of a perylenediimide dye leads to red light emitting polymer nanoparticles. At a molar incorporation of 2 mol % (poly(2-co-4)), emission occurs nearly exclusively from the dye. By clear contrast to the solid nanoparticles, no energy transfer to the perylenediimide repeat units is observed for copolymer solutions.

Incorporation of the fl uorenone derivative 3 into poly-2 nanoparticles results in a broadening of the fl uorescence spectra at low concentrations. At an incorporation of around 9 mol %, an orange emission with a maximum at 565 nm originating from the dye comonomer occurs almost exclusively. At the same time, the absorption spectra of these copolymers are largely identical to the homopolymer.

The incorporation of copolymerizable dyes results in an adjustability of the emission maximum of the nanoparticles, as demonstrated here by poly-2: 496 nm; poly (2-co-3): 565 nm, and poly (2-co-4): 641 nm (Figure 3). The Hamamatsu Absolute PL Quantum Yield Measurement System was the ideal instrument for designing the optical properties of these conjugated polymer nanoparticles, as absolute fl uorescence spectra and quantum yields can be obtained very fast and easy, by simply measuring two spectra, one reference and one of the sample.

References(1) Kietzke, T.; Neher, D.; Landfester, K.; Montenegro, R.; Guntner, R.; Scherf, U. Nature Mater. 2003, 2, 408-412.(2) Baier, M. C.; Huber, J.; Mecking, S. J. Am. Chem. Soc. 2009, 131, 14267–14273.(3) Moon, J. H.; McDaniel, W.; MacLean, P.; Hancock, L. F. Angew. Chem. Int. Ed. 2007, 46, 8223-8225.(4) Wu, C.; Szymanski, C.; Cain, Z.; McNeill, J. J. Am. Chem. Soc. 2007, 129, 12904-12905.(5) Ego, C.; Marsitzky, D.; Becker, S.; Zhang, J.; Grimsdale, A. C.; Müllen, K.; MacKenzie, J. D.; Silva, C.; Friend, R. H. J. Am. Chem. Soc. 2003, 125, 437-443.(6) Kawamura Y.; Sasabe H.; Adachi C. Jpn. J. Appl. Phys. 2004, 43, 7729-7730.(7) Nguyen, T.-Q.; Martini, I. B.; Liu, J.; Schwartz, B. J. J. Phys. Chem. B 2000, 104, 237-255.(8) Schwartz, B. J. Annu. Rev. Phys. Chem. 2003, 54, 141-172.

Authors: Moritz Baier, Johannes Huber, and Stefan Mecking

FIGURE 3. Fluorescence spectra (λexe = 450 nm) of poly-2 (green), poly(2-co-3) (9.4%, yellow) and poly (2-co-4) (2.1%, red) nanoparticle dispersions.


News 2010 Vol. 18

IR-enhanced Si devices

Next-generation Si devices with enhanced near IR sensitivity, using a MEMS structure

Introducing the next-generation of ultra high sensitivity semiconductor sensors that exceed the performance of existing Si photodiodes, Si APDs, and CCD image sensors. These sensors have MEMS (Micro-Electro-Mechanical-Systems) structures fabricated using our own unique laser processing technology and achieve very high sensitivity in the near infrared region. They are the ideal solution for a wide variety of applications such as optical communications, thermal measurement and fl uorescence photometry.

Spectral response (IR-enhanced Si PIN photodiode) (Typ. Ta=25 deg.C)

0.8

0.6

0.4

0.2

00001008002 600400

Wavelength (nm)

1200

Phot

o se

nsiti

vity

(A/W

)

Quantum efficiency=100%

Conventional type

Si PIN photodiode(S11499 series)

Sensitivityincreased

IR-enhanced

IR-enhanced Si line-up


9News 2010 Vol. 1

Spectral response (IR-enhanced Si APD)

Qu

antu

m e

ffic

ien

cy (

%)

Wavelength (nm)

(Typ. Ta=25 deg.C.)

0200 400 600 800 1000 1200

10

20

30

40

50

60

70

80

100

90

Conventional type

CCD image sensor

Front-illuminated CCD

IR-enhanced

Spectral response (IR-enhanced CCD image sensor)

Wavelength (nm)

Pho

to s

ensi

tivi

ty (

A/W

)

400

10

0

70(Typ. Ta=25 deg.C., M=100)

30

50

60

20

40

600 800 1000 1200

(S11518 series)

Conventional productsS8890 series

(S11519 series)

Si APDIR-enhanced

Si APDIR-enhanced

Line-up (Typ. Ta=25 deg.C., unless otherwise noted)

Product Type No.Conventional

productsActive area size Package Application Page No.

Si PIN photodiode

High speedS11498 S9055 Ø 0.2 mm TO-18

Optical fi bre communications P.10S11498-01 S9055-01 Ø 0.1 mm TO-18

Large active area

S11499 - Ø 3 mm TO-5YAG laser monitor P.10

S11499-01 S3759 Ø 5 mm TO-8

APD

High sensitivityS11518-10 S8890-10 Ø 1 mm TO-5

YAG laser monitor P.11S11518-30 S8890-30 Ø 3 mm TO-8

Low voltageS11519-10 S8890-10 Ø 1 mm TO-5

S11519-30 S8890-30 Ø 3 mm TO-8

CCD image sensor

S11500-1007 S7030-1007 24 x 24 µm/1024 x 128 chCeramic

Non-cooledRaman spectrometers P.12S11510-1006 S10420-1006 14 x 14 µm/1024 x 64 ch

S11510-1106 S10420-1106 14 x 14 µm/2048 x 64 ch

IR-enhanced

IR-enhanced

IR-enhanced


News 2010 Vol. 110

IR-enhanced Si PIN photodiodesS11498 series, S11499 series

IR-enhanced Si PIN photodiodes

The S11498 series and S11499 series are a family of Si PIN photodiodes which use our new MEMS structure to offer a drastic improvement in sensitivity in the near infrared region at longer wavelengths.

Si PIN Photodiodes S11498 series

Features High sensitivity: 0.4 A/W (850 nm) High speed

1.5 GHz (S11498) 2.0 GHz (S11498-01)

Applications Optical fi bre communications High speed measurement

Si PIN Photodiodes S11499 series

Features High sensitivity: 0.6 A/W (1060 nm) Large active area High speed Low capacitance

Applications YAG laser monitor

Author: Robin Smith, Hamamatsu Photonics UK

Spectral response

0.8

0.6

0.4

0.2

00001008002 600400

Wavelength (nm)

1200

Pho

to s

ensi

tivi

ty (

A/W

)

(Typ. Ta=25 deg.C.)

Quantum efficiency=100%

S11498 series

S11499 series

Conventional type

S11498/S11498-01 (left), S11499/S11499-01 (right)


11News 2010 Vol. 1

IR-enhanced Si APDsS11518 series, S11519 series

IR-enhanced Si APD

The S11518 series and S11519 series are a family of Si APDs which use new MEMS technology to offer 40% quantum effi ciency at 1.06 µm.

The S11518 series can replace the S8890 series whilst offering almost double the quantum effi ciency at 1.06 µm, making this series ideal for YAG laser monitoring.

The S11519 series is designed for operation at low bias and offers excellent characteristics and stable operation at just 350 V.

Features High sensitivity in the near infrared region High gain S11519 series: stable operation at low bias


Spectral response

Wavelength (nm)

Pho

to s

ensi

tivi

ty (

A/W

)

400

10

0

70(Typ. Ta=25 deg.C., M=100)

30

50

60

20

40

600 800 1000 1200

Conventional productsS8890 series

S11519 series

S11518 series

S11518-10/S11518-30, S11519-10/S11519-30


News 2010 Vol. 112

IR-enhanced CCD image sensorsS11500-1007, S11510 series

IR-enhanced CCD image sensors

The S11500-1007 and S11510 series are FFT (Full Frame Transfer) CCD image sensors which feature improved sensitivity in the near infrared region and a quantum effi ciency of 40% at 1000 nm through the use of a MEMS structure on the back side of the CCD.

Although these are area image sensors they can also be used as linear sensors through the implementation of binning, making these products ideal for spectroscopy applications.

CCD area image sensor S11500-1007

Features Pixel size: 24 x 24 µm Line, pixel binning Wide spectral response range Low readout noise Wide dynamic range

CCD image sensors S11510 series

Features Pixel size: 14 x 14 µm High CCD node sensitivity: 6.5 µV/e-

Wide spectral response range Wide dynamic range


Spectral response

Qu

antu

m e

ffic

ien

cy (

%)

Wavelength (nm)

(Typ. Ta=25 deg.C.)

0200 400 600 800 1000 1200

10

20

30

40

50

60

70

80

100

90

Conventional type

S11500-1007S11510 series

Front-illuminated CCD

S11500-1007 (left), S11510-1006 / S11510-1006 (right)


13News 2010 Vol. 1

CCD image sensorsS11155-2048, S11156-2048

CCD image sensors with electronic shutter function

The S11155-2048 and S11156-2048 are back-thinned CCD linear image sensors with an internal electronic shutter function, designed for use in spectrometers.

These new image sensors use a resistive gate structure that allows for a high speed transfer rate with minimal image lag, even with a large pixel height. Two pixel sizes are available, and the back-thinned structure makes these sensors ideal for UV-VIS measurements.

Features Built-in electronic shutter 10 MHz readout speed max. High UV-VIS sensitivity

Author: Richard Harvey, Hamamatsu Photonics UK

S11155-2048, S11156-2048

Specifi cations

Type no.Pixel size

[µm (H) x µm (V)]Number of active pixels Line rate (KHz) Cooling Dedicated driver circuit

S11155-2048 14 x 5002048 x 1 2 Non-cooled

-

S11156-2048 14 x 1000 -

P1V P2V P1V P2V

N N

P

N N-N-N-N- N NN-P+ N

P

REGL REGH STG TG

Potential slope

Resistive gate

Resistive gate structure

In ordinary CCDs, one pixel contains multipleelectrodes and a signal charge is transferred by applying different clock pulses to those electrodes[Figure 1].

In resistive gate structures, a single high-resistance electrode is formed in the active area, and a signal charge is transferred by means of a potential slope that is created by applying different voltages across the electrode [Figure 2].

Compared to a CCD area image sensor which is used as a linear sensor by line binning, a one-dimensional CCD having a resistive gate structure in the active area offers higher speed transfer, allowing readout with low image lag even if the pixel height is large.

[Figure 1] Schematic diagram and potential of ordinary 2-phase CCD

[Figure 2] Schematic diagram and potential of resistive gate structure


News 2010 Vol. 114

Etaloning characteristics

Wavelength (nm)

Rel

ativ

e se

nsi

tivi

ty (

%)

0001009 950 960 970 980 990930910 940920

(Typ. Ta=25 deg.C.)

S11071/S10420-01 series

Conventional type

0

40

30

20

10

50

60

70

80

90

100

110

KMPDB0284EA

Specifi cations (typical example) (Typ. Ta=25 deg.C.)

Parameter S11071 series S10420-01 series UnitPixel size 14 (H) x 14 (V) µm

Spectral response range 200 to 1100 nm

CCD node sensitivity 8 6.5 µV/e-

Full well capacity (horizontal) 200 300 ke-

Readout noise 23*1 6*2 e-rms

Dark current 50 e-/pixels/s

Dynamic range 8700 50000 -

Anti-blooming With anti-blooming (> FW x 1000) -

Readout speed (max.) 10 0.5 MHz

*1: Readout speed 2 MHz.*2: Readout speed 20 kHz.

Improved etalon characteristics, high speed and low noise types are available

The S11071 and S10420-01 series are back-thinned CCDs designed for spectrophotometers. Two types are available, high speed and low noise, both with improved etalon characteristics.

Features High speed type: S11071 series

Low noise type: S10420-01 series Number of pixels

1024 × 16 pixels (S11071-1004, S10420-1004-01) 1024 × 64 pixels (S11071-1006, S10420-1006-01) 2048 × 16 pixels (S11071-1104, S10420-1104-01) 2048 × 64 pixels (S11071-1106, S10420-1106-01)

Back-thinned CCD image sensorsS11071/S10420-01 series

S11071/S10420-01 series


15News 2010 Vol. 1

Driver circuits for CCD image sensors C11287, C11288

High performance driver circuits

Hamamatsu Photonics introduce two new driver circuits, the C11287 and C11288, specifi cally designed for the S10420 and S11071 series of CCD image sensors.

The circuits are supplied with USB interface and application software (DCam-USB) which allows easy operation from a PC running Windows. The circuits hold a CCD driver circuit, analogue video signal processing circuit (14-bit A/D converter), timing generator and power supply and as such, offer a complete driving solution for the CCD sensor of choice.

Features Built-in 14-bit A/D converter Adjustable gain Adjustable offset USB 2.0 interface


Specifi cations (Typ. Ta=25 deg.C., unless otherwise noted)

Parameter ConditionC11287 C11288

S10420-1004-01

S10420-1006-01, S11510-1006

S10420-1104-01

S10420-1106-01, S11510-1106

S11071-1004

S11071-1006

S11071-1104

S11071-1106

Unit

Scanning 250 k 4 M Hz

Frame readout time 4.8 5.7 8.9 9.8 0.62 1.58 0.79 1.75

msData transfer time 4.3 4.3 8.4 8.4 0.22 0.22 0.44 0.44

Total transfer time 4.8 5.7 8.9 9.8 0.84 1.80 1.23 2.19

A/D conversion resolution 16383ADU 14 bit

Conversion gain 12.2 e-/ADU

Readout noise 3 7 ADU

Dynamic range 5461 2730 -

Interface USB 2.0 -

Supply voltage

C11287 360 mA typ. DC + 4.5 to 5.5 V

C11288 650 mA typ. DC +4.5 to 5.5 V

Storage temperature -20 to +70 deg.C.

Operating temperature No condensation 0 to +50 deg.C.

Dimension 80 (H) x 70 (W) 80 (H) x 80 (W) mm

Weight Approx. 60 Approx. 65 g

C11287


News 2010 Vol. 116

InGaAs area image sensorG11097-0606S

Excellent linearity and high sensitivity

The new G11097-0606S InGaAs sensor has a 64 x 64 pixel array with 50 µm pitch utilising CMOS readout circuitry. Featuring high sensitivity in the near infrared region this device is ideal for thermal image monitoring, laser beam profi ling and general near infrared imaging applications.

The G11097-0606S is simple to operate, requiring only a Master Start pulse and Master Clock voltages from external sources to provide an analogue video output.

The G11097-0606S is hermetically sealed in a TO-8 package together with a one-stage thermoelectric cooler to deliver highly stable operation with reduced noise.

Features Spectral response range: 0.95 to 1.7 µm Excellent linearity by offset compensation High sensitivity: 1.6µV/e-

Simple operation One-stage TE cooled

Applications Thermal imaging Near infrared imaging


G11097-0606S


17News 2010 Vol. 1

High resolution encoder moduleP11159-01AS

Small package suitable for linear and rotary encoders

The new P11159-01AS is an optical encoder module consisting of a photo IC and red LED. The photo IC incorporates a 4-element photodiode and a 2-phase digital signal output circuit.

Features High resolution: 0.05 mm (2-phase output) Positioning pin for simple alignment Small package Suitable for lead-free fl ow soldering

Applications Linear and rotary encoders


Block diagram

(1.8)(3.2) (3.2)

3.4-0.2

2.5

3.6

± 0

.5

4.5

± 0

.3

2.0-

0.1

4.05 1.27 ± 0.5

1.27 ± 0.5

1.27 ± 0.5

0.9

1.8 ± 0.5 2.0 ± 0.5

6.8 ± 0.5

1.8

7.0

(6 ×

) 0.

45

0.9

0.7

± 0

.5

2.6

± 0

.3

8.60.8

10.2

9.4

(2 ×) 1.0

8.6-

0.1

1.6

5.2-0.1

(6 ×) 0.25

Reference plane

Positioning pin(2 ×) C0.2

Center ofoptical axis

Center of slit plate

VOA

GNDVccVOB

CathodeAnode

Tolerance unless otherwise noted: ±0.1, ±2°Lead position is specified at the reference plane.Values in parentheses indicatereference values.Unit of minimum shipment when mass-producing:1000 pcs = 50 pcs/stick × 20 sticks(the moisture-proof packing)

(6 ×) C0.3

Center ofoptical axis

+0.2

+0.1

+0.

2

+0.

2

A

Anode mark

(0.5

)

(3.0) (2.0)(1.6)

(1.0)

Dimensional outline (unit: mm)

Anode

Cathode

CI otohPDEL

-+

-+

reffub tuptuOpmaerPGND

PhotodiodeHysteresis comparator & buffer comparator

PD A

PD B

PD C

PD D

VOB

VOA

Vcc

P11159-01AS


News 2010 Vol. 118

Mini-spectrometerC10988MA

SEM image of grating

Image sensor Input light

Through-hole slit

Bump electrode

Glass wiring board

Grating made by nano-imprint

Lens

Diffractedlight

Multiple MEMS technologies are applied to downsize the C10988MA mini-spectrometer.

Thumb-sized "ultra-compact spectrometer" made a reality by advanced MOEMS technology!

The C10988MA is a thumb-sized (27.6 × 13 × 16.8 mm) spectrometer head developed by merging our MEMS (Micro-Electro-Mechanical Systems) andimage sensor technologies.

In addition to the CMOS image sensor chip integrated with an optical slit by etching, the C10988MA employs a grating that is formed on a convex lens by nano-imprint. Since our sensors and optical systems are manufactured in-house, they offer a high degree of design freedom to meet various market needs.

MOEMS (Micro-Opto-Electro-Mechanical-Systems)

MEMS is attracting a lot of attention recently as a technology for innovating semiconductor devices. We are integrating MEMS with optical technology to develop radically new MOEMS technology to create sophisticated and versatile products that are smaller and cheaper than ever before.

This spectrometer is available for OEM customers only.

MEMS technology Etching Nano-imprint

Bonding

Optical technology Optics technology Image sensors IC technology

10 µm

Image sensors used in various types of mini-spectrometers

C10988MA


19News 2010 Vol. 1

Grating pattern

Master board

Condenser

Replica resin

Master board

Nano-imprint technologySimplifying the optical system

Nano-imprint technology is used to produce replica gratings, which transfers the grating pattern onto a glass body. Replica resin is coated on the top of a convex lens, and the grating is replicated on the lens by pressing the grating pattern against the resin while simultaneously irradiating it with ultraviolet light.

Application example -2 (MOEMS technologies)

Etching technologyIntegrating a slit with an image sensor

Deep etching is used to form a 75 × 750 µm slit on CMOS image sensor chips made in-house by Hamamatsu. These devices deliver high positioning accuracy because the slit is formed using the same photomask as the image sensors.

Application example -1 (MOEMS technologies)

CMOS chip

Slit

Alkaline etching

Deep etching

CMOS chip (back) Cross section of through-hole slit Replica grating SEM image of grating

Features Thumb size: 27.6 × 13 × 16.8 mm Weight: 9 g Spectral response range: 340 to 750 nm Spectral resolution: 12 nm Designed to be built into equipment

Applications Mobile measurement equipment Colour monitor of printer, large size display

Optical characteristics

Parameter Specifi cation UnitSpectral response range 340 to 750 nm

Spectral resolution (spectral response half width)

12 nm

Wavelength reproducibility max. ±0.5 nm

Spectral stray light max. -25 dB

Electrical characteristics

Parameter Specifi cation UnitDriving voltage 5 V

Power consumption 30 (typ.) mW

Video rate max. 200 kHz

General ratings/absolute maximum ratings

Parameter Specifi cation Unit

Image sensorNumber of pixels 256 pixel

Pixel size 12.5 (H) x 1000 (V) µm

Slit 75 (H) x 750 (V) µm

Optical NA 0.22 -

Operating temperature +5 to +40 deg.C.

Storage temperature -20 to +70 deg.C.

27,6 mm

16,8 mm

13 mm

C10988MA


News 2010 Vol. 120

Mini-spectrometerC10988MA

Spectral resolution vs. wavelength

0

300 350 400 450 500 550 600 650 700 750

5000

10000

15000

20000

25000

30000

35000

40000

45000(Typ. Ta=25 deg.C.)

A/D

co

un

t

Wavelength (nm)

Measurement example using a white LED

7

300 350 400 450 500 550 600 650 700 750

8

9

10

11

12(Typ. Ta=25 deg.C.)

Spec

tral

res

olu

tio

n (

nm

)

Wavelength (nm)

C11351Evaluation circuit for mini-spectrometer C10988MA

The C11351 is a circuit board designed to aid the simple evaluation of the C10988MA mini-spectrometer (sold separately). As part of a complete evaluation solution the C11351 comes with analysis software, including DLLs (Dynamic Link Libraries) for potential software development.

The board incorporates the timing generators and processing circuits to run the spectrometer, requiring only the 5 V from the USB connection for power. Onboard are the conversion factors for converting the image sensor pixel number into a wavelength, as such allowing for simple evaluation of the spectrum being analysed.

Features High A/D resolution: 16-bits USB powered


C11351

LASER PRODUCTS

21News 2010 Vol. 1

Antenna module for THz emission and detection

Hamamatsu Photonics introduce an exciting new device for use in the steadily growing fi eld of Terahertz (THz) radiation based applications. The G10620 series are THz emission/detection modules, operating from 0.5 to 6 THz. The chips are available in three confi gurations; dipole, bow-tie and spiral. The modules also incorporate an SMA connector to facilitate simple connection with other equipment.

Features Emission and detection No alignment required Simple connection

Applications Non-destructive testing Far-IR spectroscopy Material analysis


Prepared patterns of photoconductive antenna/schematic fi gure of photoconductive part

20 µm

10 µm

6 µm 2 mm

60°

2.4 mm

2.3 mm

Dipole:G10620-11

Bow-Tie:G10620-12

Spiral:G10620-13

Magnified (Figure)

6 µm

Magnified (Figure)

5 µm

6 µm

Absolute maximum ratings

Parameter Symbol Value UnitMaximum applied voltage Vmax 15*1 V

Maximum input optical power Pmax 15*2,*3 mW

Operating temperature*4 Top(c) +5 to +35 deg.C.

Storage temperature*4 Tstg -20 to +40 deg.C.

*1: Recommended value 10 V.*2: Recommended value 10 mW.*3: Use a femtosecond laser, which has repetition rate from 50 MHz to 150 MHz.*4: No condensation.

THz antenna moduleG10620 series

G10620

LASER PRODUCTS

News 2010 Vol. 122

High power laser line-up

Control of output beam - LD modules with FAC/SAC lens

Example 1Collimating only fast axis

Emission wavelength 803 nm Operation mode QCW No. of stack 12 Peak output power 1.2 kW Beam spread angle (fast axis) 1 degrees (typ)

Example 2 Collimating both fast and slow axes

Emission wavelength 915, 940, 980 nm Operation mode CW CW output power 60 W Beam spread angle (fast axis)

5 mrad (FWHM) Beam spread angle (slow axis)

60 mrad (FWHM)

Fibre output type laser diode

Fibre core dia.

CW output power

QCW output power (duty ratio 20%)

Applicable wavelength examples

100 µm 30 W - 808 nm, 940 nm, 980 nm

200 µm 30 W 70 W 808 nm, 940 nm, 980 nm

400 µm30 W

75 W808 nm, 940 nm, 980 nm

40 W 940 nm, 980 nm

800 µm

30 W80 W

808 nm, 940 nm, 980 nm

50 W 940 nm, 980 nm

75 W 130 W 940 nm, 980 nm

High power laser diodes

Hamamatsu Photonics are pleased to introduce our range of high power laser diodes. Featuring a range of packages, powers and wavelengths our laser diodes are able to cover many applications such as medical innovations and nuclear fi ssion experiments.

The overall product range can be split into several key product types for easy reference: CW type laser diodes, pulse laser diodes, super luminescent diodes, single bar modules and stack modules.

Constant wave (CW) laser diodes available from Hamamatsu cover a broad range of wavelengths; starting at 685 nm up to 1205 nm and have output powers from 10 mW to 5 W. These options are ideal for many applications, such as solid state laser pumping and medical instruments. To complement this range of CW lasers Hamamatsu offers peripherals such as power supplies and cooling for a more complete solution.

The pulse laser diodes cover the near infrared region, 780 nm - 905 nm and as such are ideal for optical triggers, security barriers and range fi nders as Hamamatsu offer the counterpart silicon detectors.

The single bar modules are capable of emission powers from 50 W to 200 W. Whilst depending on the packaging option chosen, up to 75 bars can be stacked in one module, offering a maximum output power of over 11 kW. Various cooling methods are available, from water and Funryu active cooling to open heat sink types. Emission wavelengths including 792 nm, 915 nm and 980 nm, with many more in between are easily achievable.


High power laser diode line-up


23News 2010 Vol. 1

Small metal package photomultiplier tubes and modulesR9880U series

High quantum effi ciency in a compact package

Hamamatsu Photonics introduce a new range of small metal package photomultiplier tubes, the R9880U series. These PMTs are not only available with traditional high sensitivity multialkali photocathodes, but also Hamamatsu’s unique new super- and ultra-bialkali photocathodes (SBA and UBA).

These SBA and UBA photocathodes achieve much greater quantum effi ciencies than a traditional bialkali photocathode; typically 35% and 43% respectively.

The R9880U series of PMTs are also available in a range of highly functional modules, incorporating a voltage divider and high voltage power supply circuit. Modules are also available with current-to-voltage converters and photon counting circuits.

These high quantum effi ciencies are comparable to many semi-conductor sensors and, combined with the noise free gain of > 1 million inherent in these PMTs, provide a new ultra sensitive range of detectors for a variety of analytical and medical applications, such as DNA chip readers, fl ow cytometers and many more.

Features High quantum effi ciency High sensitivity and gain Very compact


H10682 series

H10720 series, H10721 series

H10722 series, H10723 series

R9880U series

Modules integrating R9880U series

Type no. Output type Input voltage Confi guration

H10720 series Current output

On-board+5 V

PMT R9880U series + Voltage driver circuit +

High voltage power supply circuitH10721 series

Cable output

H10722 seriesVoltage output

±5 V

PMT R9880U series +Voltage driver circuit +

High voltage power supply circuit + Current to voltage conversion amp.

H10723 series

H10682 seriesPhoton

counting+5 V

PMT R9880U series + Voltage driver circuit +

High voltage power supply circuit + Photon counting circuit

Fibre core dia.

CW output power

QCW output power (duty ratio 20%)

Applicable wavelength examples

100 µm 30 W - 808 nm, 940 nm, 980 nm

200 µm 30 W 70 W 808 nm, 940 nm, 980 nm

400 µm30 W

75 W808 nm, 940 nm, 980 nm

40 W 940 nm, 980 nm

800 µm

30 W80 W

808 nm, 940 nm, 980 nm

50 W 940 nm, 980 nm

75 W 130 W 940 nm, 980 nm


News 2010 Vol. 124

Photon counting head (1-1/8 inch head-on PMT)

H11123 H11411

Head-on photomultiplier tube modulesH11123, H11411

Hamamatsu Photonics introduce two new modules integrating traditional head-on photomultiplier tubes (PMTs). The H11411 contains a large active area 52 mm (2 inch) diameter tube with high sensitivity in the blue region.

The H11123 houses a smaller 28 mm diameter tube, along with a high speed amplifi er, comparator and pulse shaper, creating a high sensitivity photon counting head.

Both modules integrate a high voltage circuit within the module housing, allowing for simple low voltage operation.

Features High sensitivity Low dark current/count Reliable and compact design


Photosensor module (2 inch head-on PMT)


25News 2010 Vol. 1

Side-on PMTR9876, R11540

Side-on PMT with improved infrared sensitivity characteristics

Hamamatsu Photonics introduce a new side-on photomultiplier tube, the R9876, which features a very wide spectral response range. The new tube has an extended infrared sensitivity, out to 950 nm, which is longer than most conventional tubes. This extra response in the infrared will prove invaluable to many applications.

Features Wide spectral response range: 185-950 nm High quantum effi ciency


High UV quantum effi ciency

The R11540 is a 28 mm (1-1/8th inch) diameter side-on PMT recently introduced to the Hamamatsu range of PMTs. As part of this family the R11540 can be used with many of Hamamatsu’s existing accessories and has full technical support with years of experience.

The R11540 distinguishes itself from other PMTs as it has exceptional quantum effi ciency in the UV range; 40% at 350 nm. Coupled with a high gain of 1 x 107 this PMT is ideal for low light detection in the UV region.

Features High gain: 1 x 107

High UV sensitivity Bialkali photocathode Active area: 8 x 24 mm


R9876

R11540

Spectral response of R9876

100

10

1

0.1

0.01100 200 300 400 500 600 700 800 900 1000

WAVELENGTH (nm)

CA

THO

DE

RA

DIA

NT

SEN

SITI

VIT

Y (

mA

/W)

QU

AN

TUM

EFF

ICIE

NC

Y (

%)

R9876

CONVENTIONALPMT (R928)

CATHODE RADIANT SENSITIVITYQUANTUM EFFICIENCY


News 2010 Vol. 126

GaAsP and GaAs photomultiplier tube modulesH10769A-40/50, H8224A-40/50, H10770A-40/50

PMT modules based on the popular H7422 series

Hamamatsu Photonics introduce a new range of modules which have been designed around the popular H7422 series of GaAsP and GaAs modules. These new modules offer the end user the ability to select a module with a wider fi eld of view, an increased protection circuit threshold current over the standard 10 nA or an option to operate without cooling.

These enhancements to the H7422 series give the end user more freedom in selecting the best module for their application.

Features High sensitivity from VIS-NIR Wider FOV Increased protection circuit threshold current Choice of non-cooled module


H10769A-40/50

H10770A-40/50H8224A-40/50

Photosensor with GaAsP/GaAs photocathode

Type Type no.Thermo-electric

cooler

Cooling temperature (ΔT)

(max.)

High voltage power supply

Heat sink with fan

FOV (fi eld of view)

Features

Photosensor module

H7422A*1-40-50

Built-in

35 deg.C.

Built-in

A7423 (sold separately)

68 deg.

Revised protection circuit threshold,low dark noise

Photon counting head

H7421-40/50 Built-in photon counting circuit

Photosensor module

H10769A*1-40/5025 deg.C.

78 deg.Revised protection circuit threshold,wide FOV

Photosensor module

H8224A*1-40/50-

68 deg.Revised protection circuit threshold,compact

Photosensor module

H10770A*1-40/50 - - 136 deg.Revised protection circuit threshold,wide FOV

*1: "P" type for photon counting is available.


27News 2010 Vol. 1

OEM-type high voltage power supplies

Hamamatsu Photonics introduce two new ranges of high voltage power supplies ideal for use in OEM applications using photomultiplier tubes.

The C11152 series are small, compact, PCB mountable -1500 V high voltage supplies, which exhibit excellent low ripple noise characteristics.

The C11323 series are compact power supplies with a high current output of 20 mA and an excellent conversion effi ciency of 90%. This makes the C11323 series ideal for multiple PMT operation in larger detection systems.

Features Low ripple noise High conversion effi ciency Small and compact


Photomultiplier t ube p ower su pplies C11152, C1 1323

C11152

C11323

High voltage power supply

Type no. C11152 C11152-01 C11323-02 C11323-52 Unit

Output voltage (max.) -1500 -1800 +1800 V

Output current 1 20 mA

Input voltage +15 +12 +24 V

Ripple noise (p-p) (typ.) 8 40 mV

Dimensions (WxHxD) 41 x 10 x 41 51 x 27 x 98 mm

Features Low ripple noise

Monitor output terminal and high voltage output ON/OFF terminal Compact (1/5 in volume when compared to previous type C4710)

High conversion effi ciency: 90% High current output

Multiple PMT operation-


News 2010 Vol. 128

Amplifi er unitC11184

Amplifi er with DC to 300 MHz bandwidth

The C11184 is an amplifi er unit which offers a wide bandwidth of operation; DC to 300 MHz whilst providing a high conversion factor from PMT current inputs. This unit is for amplifying low signals to a more useable level.

The C11184 is light weight and very compact. Capable of connecting to most PMTs through the use of MCX connectors or with the MCX-BNC adaptors provided with the unit.

Features Wide bandwidth: DC to 300 MHz Rise time: 1.2 ns Compact MCX connector Current to voltage conversion: 1.25 mV/µA


General characteristics

Parameter Description/value

Voltage gain*1 28 d ± 2 dB (approx. 25 times)

Frequency bandwidth (-3 dB)

Typ. DC to 300 MHz

Current-to-voltage conversion factor

Load resistance: 1 MΩ 2.5 mV/µA

Load resistance: 50 Ω 1.25 mV/µA

Rise time Typ. 1.2 ns

Input polarity Positive/negative

Amplifying method Non-inverting output

Maximum output voltage

Load resistance: 1 MΩ ±2 V min.

Load resistance: 50 Ω ±1 V min.

Output noise voltage*1 Typ. 1 mV rms

Power supply voltage ±5 V

Power supply current Max. ±70 mA

Weight 41 g

*1: Load resistance: 50 Ω.

Specifi cations - maximum ratings (absolute maximum values)

Parameter Value

Power supply voltage ±6.5 V

Operating temerature 0 deg.C. to +40 deg.C.

Storage temperature -15 deg.C. to +60 deg.C.

Dimensional outlines (unit: mm)

52.0 ± 0.5 450 ± 20

28.0

± 0

.57.

2 ±

0.4

14.5 ± 0.5

26.5 ± 0.213.0 ± 0.2

2-M3 L=2.5

REDBLACKBLUE

: +5 V: GND: -5 V

OUTPUTMCX CONNECTOR*

* Accessary (Supplied): MCX-BNC Adapter

Please consult our sales office when there is on uncertion pointabout the connection terminal

INPUTMCX CONNECTOR*

300MHz AMPLIFIERUNIT

INPUT (MCX)

OUTPUT(MCX)

GAIN : X25

RED: +5VBLACK:GND

BLUE: -5V

C11184

MCX-BNC Adapter (SUPPLIED)

22.9

13.

5

MCX PLUG BNC JACK

C11184


29News 2010 Vol. 1

Quartz fl ow cells for fl ow cytometry J11020 series

High quality cells produced using Hamamatsu’s excellent glass making expertise

The new J11020 series has been designed by Hamamatsu to offer high quality and high reproducibility quartz cells for fl ow cytometry applications. Hamamatsu has transferred its unique glass making and quartz processing skills, developed over years of vacuum device manufacture, to this new range of products. A wide range of standard and customised cells are available and all are produced with micrometer accuracy.

Features Wide range of cell designs High accuracy production High reproducibility


Example

Shape type

Photo no. MaterialFlow channel

size (mm)Features

Standard 1 Quartz 0.25 ± 0.01

Suitable flow channel for

detecting minute particles.

Nipple type 2 Quartz 0.25 ± 0.01Standard type

with nipple-type outlet.

With chamber

3 Quartz 0.25 ± 0.01

Gas-processed chamber and orifi ce. Easy laminar fl ow.

With lens 4 Quartz 0.25 ± 0.01Improved light condensing.

1

3

24


News 2010 Vol. 130

UV area curing unitLC-L3

Large area UV LED based curing

The LC-L3 is the newest member in a family of LED and lamp based UV curing systems offered by Hamamatsu. The LC-L3 is a dedicated large area curing unit, that uses nine high output UV LEDs. Highly uniform and stable irradiation is maintained throughout the LEDs long lifetime.

The LC-L3 also offers excellent scope for OEM users, allowing the system to be expanded with multiple curing heads, to delivery a large area curing.

Features High output 365 nm or 385 nm LEDs 20.000 hour lifetime Highly uniform irradiation

Applications UV adhesive and ink drying Semi-conductor and liquid crystal ink exposure Wide range of experimental techniques requiring stable UV light source


Specifi cations

Parameter Description/value

UV irradiation intensity

365 nm LEDs 250 mW/cm2 at 365 nm

385 nm LEDs 325 mW/cm2 at 385 nm

Peak wavelength

365 nm LEDs 365 nm ± 5 nm

385 nm LEDs 385 nm ± 5 nm

Class 3B (JIS C 6802:2005)

Input voltage(DC) 12 V to 24 V

(external control connector) or (AC) 100 V to 240 V (AC adapter)

Power consumption (max.) 60 W

Operating temperature range -5 deg.C. to +35 deg.C.

Operating humidity range Below 80% (no condensation)

Storage temperature range -10 deg.C. to +60 deg.C.

Cooling method (LED head unit and LED driver)

Forced air cooling*1 by high-pressure air or high-pressure nitrogen (flow rate)

0.12 MPa to 0.22 MPa (gas temperature) +25 deg.C. ± 10 deg.C.

LED service life1 year (average life: 10.000 hours,when light level has dropped to

50% of initial value)

Applicable standard(safety standard) IEC61010-1

(EMC standard) IEC61326-1 Group 1 Class A

Weight 1.73 kg (L11195-00111500)

*1: Suitable air tube: 6 mm.

Light beam distribution

Uniform irradiation type - full irradiation:Light level 100% at 365 nm

-25

-20

-25 -20 -15 -10 -5 0 5 10 15 20 25

DISTANCE FROM CENTER (mm)

DIS

TAN

CE

FRO

M C

ENTE

R (

mm

)

-15

-10

-5

0

5

10

15

20

25

* Intensity measured at point 30 mm away from output end

200 - 250 mW/cm2

150 - 200 mW/cm2

100 - 150 mW/cm2

50 - 100 mW/cm2

0 - 50 mW/cm2

-300-5-10-15-20-25 0352025101503-


DIS

TAN

CE

FRO

M C

ENTE

R (

mm

)

0

30

25

20

15

10

5

-5

-10

-15

-20

-25


700 - 800 mW/cm2

600 - 700 mW/cm2

500 - 600 mW/cm2

400 - 500 mW/cm2

300 - 400 mW/cm2

200 - 300 mW/cm2

100 - 200 mW/cm2

0 - 100 mW/cm2

Linear beam type:Light level 100% at 365 nm

-25

-20

-25 -20 -15 -10 -5 0 5 10 15 20 25



DIS

TAN

CE

FRO

M C

ENTE

R (

mm

)

-15

-10

-5

0

5

10

15

20

25

200 - 250 mW/cm2

150 - 200 mW/cm2

100 - 150 mW/cm2

50 - 100 mW/cm2

0 - 50 mW/cm2

Uniform irradiation type - separate irradiation (middle row): Light level 100% at 365 nm

-25

-20

-25 -20 -15 -10 -5 0 5 10 15 20 25


DIS

TAN

CE

FRO

M C

ENTE

R (

mm

)


-15

-10

-5

0

5

10

15

20

25

200 - 250 mW/cm2

150 - 200 mW/cm2

100 - 150 mW/cm2

50 - 100 mW/cm2

0 - 50 mW/cm2

Uniform irradiation type - separate irradiation (top and bottom rows): Light level 100% at 365 nm

LC-L3


31News 2010 Vol. 1

Microfocus X-ray SourcesL10711 series, L10951

High power through PC control

The new L10951 offers up to 50 W X-ray power through variable voltage and current settings which are operated through the simple RS-232C PC interface. With a maximum tube operating voltage of 110 KV and a minimum X-ray focal spot size of 15 µm this source is ideal for many NDT applications.

Features High power: maximum output 50 W High stability Serial port control (RS-232C) Easy handling

Applications Non-destructive testing (NDT) X-ray CT In-line X-ray inspection


High resolution and high intensity

The new L10711 series has been introduced to compliment Hamamatsu’s existing range of Microfocus X-ray Sources. Offering the choice of two cathode materials for varying beam characteristics the source can achieve a minimum resolution of 0.25 µm allowing detection of small defects.

Operating the tube with a Tungsten cathode allows for voltage range of 20-160 kV, whilst the LaB6 (single crystal) cathode has a voltage range of 20-100 kV. These wide ranges allow operation for detection through many different mediums.

Features Dual cathode mode No high voltage cable connection required Easy to replace cathode Easy operation

Applications Non-destructive testing (NDT)


L10711

L10951


News 2010 Vol. 132

S2D2 light sourceL10671D/P/H

OEM UV light source module

Modifi cation example

We can create a suitable S2D2 light source for your instrument.

Optical system change Housing modifi cation Power supply modifi cation

Power supply L10671P Housing L10671H S2D2 lamp L10671D

The L10671D is the Deuterium lamp used in the popular L10671 OEM UV-VIS light source module. When used with the L10671P power supply and L10671H housing the three pieces become a high power compact UV light source ideal for many applications.

The L10671P has a small power consumption of just 10 VA or less. The board also contains interfaces to run a Tungsten lamp if required and connectors for external control.

The L10671H housing holds the lamp perfectly which also provides convenient mounting points for alignment.

The L10671D bulb has a long life time and has a very stable UV output.


Features Compact High UV output

SYSTEMS PRODUCTS

33News 2010 Vol. 1

ORCA-Flash2.8

ORCA-Flash2.8 Scientifi c CMOS camera

Hamamatsu Photonics have delivered to market our fi rst high sensitivity digital camera based on a next-generation Scientifi c CMOS sensor. As part of our long-term development program, Hamamatsu’s ORCA-Flash2.8 camera is now being delivered to customers incorporating a unique 2.8 Mpixel Scientifi c CMOS sensor - the “FL-280”.

Traditionally, increasing the readout speed of a CCD camera meant a corresponding increase in readout noise, so fast CCD cameras in life-science provided relatively noisy images. This meant that weak, dynamic signals were diffi cult to image with high resolution. The introduction of EMCCDs 10 years ago meant that for the fi rst time it was possible to capture low intensity signals at output frame rates of 30-35 frames/second in full resolution. Their revolutionary design meant that CCD readout noise could be virtually eliminated even at high speed. For diffi cult imaging situations, EMCCD camera technology has often been the only effective solution, thereby justifying their higher price compared to standard CCD cameras.

Hamamatsu are now introducing the next generation of cameras which have been designed to offer high speed and high resolution but at a price more usually associated with a standard scientifi c-grade CCD camera.

The ORCA-Flash2.8 Scientifi c CMOS camera’s combination of high speed, high resolution, high sensitivity and low noise make it ideal for the majority of applications requiring superior image quality.

In anticipation of its universal appeal, the camera has been designed to interface with a wide range of external peripheral equipment such as are found in life-science microscopy, industrial imaging and sensitive analytical instruments.

45 frames/second are output in full resolution from the cooled sensor, making it ideal for fast, low-intensity imaging. The ORCA-Flash2.8 can achieve a maximum speed of 1273 frames/second in sub-array readout mode. The FL-280 sensor design keeps the readout noise minimal even at very fast readout speeds, unlike CCD sensors.

Conventional CMOS cameras used in less demanding consumer applications have normally exhibited a large amount of noise (e.g. “fi xed pattern noise”) that has been unsuitable for scientifi c imaging. The Hamamatsu FL-280 Scientifi c CMOS sensor offers a remarkable improvement in sensitivity and noise performance. Fixed pattern noise is eliminated and peak quantum effi ciency is just under 70%. Excellent linearity between the number of

photons input into the ORCA-Flash2.8 and the signal output from the camera is achieved by careful attention to the electronic circuit design.

The camera’s 12-bit output interfaces with a PC via a standard CameraLink framegrabber board which is provided with the camera.

By combining the benefi ts of next-generation Scientifi c CMOS sensors with the qualities of the industry-leading ORCA range, Hamamatsu are now able to offer customers the ability to capture superior images with a price – performance level that is unmatched.

Features Low noise: 3 electrons (r.m.s.) High resolution: 2.8 megapixel High speed readout: 45 frames/seconds (1920 x 1440) High dynamic range: 4500:1

Applications High speed fl uoresence microscopy Semiconductor inspection X-ray scintillator readout Failure analysis

Author: Jim Owens, Hamamatsu Photonics UK

SYSTEMS PRODUCTS

News 2010 Vol. 134

ORCA-D2

Dual CCD camera

The new ORCA-D2, a dual CCD camera, has recently been released to the market. Designed around two ER-150 CCD devices, the ORCA-D2 can capture simultaneous dual wavelength or multiple focal plane images. Each CCD captures a fi eld of view measuring 1280 (H) x 960 (V) pixels, and each CCD has independent exposure and gain settings to accommodate signifi cantly different intensity levels between the two images as is often seen in FRET and ratio imaging applications.

Image separation is accomplished with interchangeable optical blocks that incorporate beam splitters and emission fi lters. Selecting among the dichroic splitter optical blocks or a 50/50 optical block provides a simple and easy-to-use tool for a wide range of applications. By combining the optical blocks with the two high quantum effi ciency ER-150 CCDs, it is easy to make dual images of wavelengths between 400 nm and 950 nm at frame rates up to 11 fps at full resolution and full 12-bit output.

Image registration in dual imaging applications is greatly simplifi ed in the ORCA-D2. One of the CCDs is adjustable via software to compensate for vertical, horizontal, and Z-axis registration. Each optical block contains a memory and can also be adjusted for multiple objective choices. When the optical block is inserted into the camera, the position of the moveable CCD is automatically adjusted for the optical setup.

Other features of the ORCA-D2 include wide dynamic range; high sensitivity and low noise, courtesy of Hamamatsu's advanced CCD cooling technology. The camera also features an IEEE1394b interface, 12-bit A/D converter, and various external trigger modes.

This camera is suitable for a variety of microscopy applications, including ratio imaging, single and dual wavelength fl uorescence microscopy, FRET, blue to NIR fl uorescence applications, co-localisation and FISH applications, dual wavelength TIRF microscopy, real-time confocal microscopy, combined transmission and fl uorescence imaging, and multi-focal plane imaging.

Author: Hubert Ortner, Hamamatsu Photonics Germany

Features Dual CCD camera with interchangeable fi lter blocks High sensitivity 1.3 Mpixel CCD sensors, type ER-150 Frame rate of up to 11 fps Suitable for fl uorescence applications IEEE1394b interface

Applications Dual wavelength imaging Ratio imaging Fluorescence microscopy FRET Co-localisation TIRF microscopy Dual-focal plane imaging

SYSTEMS PRODUCTS

35News 2010 Vol. 1

FDSS/µCELL

FDSS/µCELL imaging based plate reader

Hamamatsu introduces a new imaging based plate reader, the FDSS/µCELL, specifi cally developed for compound screening and assay development applications in the pharmaceutical, CRO and biotech Industries.

The FDSS/µCELL is optimised for fl uorescent kinetic assays using calcium and membrane potential dyes such as Fluo-4 and FMP.

Dispensing is available in either 96 or 384 well format with easily exchangeable heads. Agonist/antagonist assays can be performed in the same run, as two additions are possible. The optional washing system reduces carry over and allows tips to be reused several times.

Based on the renowned FDSS series, the µCELL uses proven and reliable technology, including our famous Hamamatsu camera range, to provide high sensitivity and fast readout times of a few minutes, compared to the longer readout times offered by other readers currently in the market.

Designed for fast and simple operation, assay and compounds plates can be easily loaded and the assay is ready to start. The software helps you to quickly set assay parameters in a single protocol which can then be easily transferred to the FDSS7000 for further screening.

The new FDSS/µCELL is very cost effective and is the reader of choice offering easy set-up and high speed readout for your kinetic assays in fl uorescence.

Author: Marc Pontoizeau, Hamamatsu Photonics France

Measurement example - Fluo-4 assay on FDSSµCELL

Normal CHO cells stimulated by UTP

Sample Cell: normal CHO cells 80% confl uent Microplate: nunc 384 Probe: 2.5 µM Fluo-4 AM (+quencher dye) Agonist: UTP fi nal conc. 4.0 µM to 0.05 µM

Normal HEK293 cells stimulated by carbachol

Sample Cell: normal HEK293 cells 80% confl uent Microplate: nunc 384 Probe: 2.5 µM Fluo-4 AM (+quencher dye) Agonist: carbachol fi nal conc. 1.8 µMto 0.02 µM

Protocol Interval: 1 s Sampling time: 3 min. Dispense timing: 20 sampling Dispense vol.: 10 µL Dispense speed: 10 µL/s

Protocol Interval: 1 s Sampling time: 3 min. Dispense timing: 20 sampling Dispense vol.: 10 µL Dispense speed: 10 µL/s

5.04.54.03.53.02.52.01.51.00.5

0.001 0.01 0.1[UTP] µM

1.0 10.0

MA

X. r

atio

EC50 = 0.26 M

8.07.06.05.04.03.02.01.0

00.001 0.01 0.1

[Carbachol] µM1.0 10.0

MA

X. r

atio

EC50 = 0.36 M

SYSTEMS PRODUCTS

News 2010 Vol. 136

Temperature measurement kit for THEMOS seriesA11389

Temperature measurement with THEMOS Mini

The THEMOS systems for failure analysis on semi-conductor devices have been extended by a new option which allows you to measure true device temperature.

True thermal analysis of devices is made possible by a hard- and software extension of the THEMOS 1000 and THEMOS mini system. System calibration is realized by acquisition of 2 emissivity maps at two different well defi ned device temperatures. Based on these data the system then performs emissivity correction on each pixel of the image. Thus the output image shows the true device temperature at each single pixel within the temperature range from 30 to 200 degrees celsius.

True temperature analysis is useful for device characterisation, study of infl uence of environmental conditions to a device or for failure analysis.

Author: Hubert Ortner, Hamamatsu Photonics Germany

Specifi cations

Parameter Description/valueTemprature range 30 deg.C.∼200 deg.C.

Temperature step 0.1 deg.C.

Objective lens IR lens 0.8x, 4x, 15x

Minimum measurement area 2 µm x 2 µm

Thermal image Temperature image

Temperature Emissivity Coordinates

Features True temperature measurement Superimpose pattern and temperature image Quantitative analysis functions including single point,

line and area analysis

Applications Thermal imaging of integrated circuits Thermal device characterization Defect localisation

Principle of temperature measurement

Create an emissivity map by acquiring two images at 2 different temperatures

Applying the original algorithm and emissivity map to compensate digital level of each pixel of an output image

12000

11500

11000

10500

10000

9500

9000

8500

8000

7500

7000

10 20 30 40 50 60

70 80

45 :

65 :

25 : BB

BB

BB

InSb

InSb

InSb

DL

DL

DL

7400

8100

9500

T=f(DL)

Create a calibration data

Convert a compensated image into temperature map by adopting a calibration data

object InSbcamera

EmissivityMap

12000

11500

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10 20 30 40 50 60

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CalibrationData

Outputimage

Compensatedimage

Temperature

Temperature measurement sequence

BB Black bodyDL Digital level

TemperatureMeasurement

Software

T1

T2

Emissivity map

37News 2010 Vol. 1

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News 2010 Vol. 138

Exhibitions 2010

June 2010

01.06. - 04.06.10

Forum Labo (Paris / France)

http://www.forumlabo.com

01.06. - 04.06.10

Atelier ANADEF (Port d'Albret / France)

http://www.anadef.org

03.06. - 06.06.10

Nordic femtochemistry meeting (Ylläsjärvi / Finland)

07.06. - 09.06.10

UKRC (Birmingham / England)

www.ukrc.org.uk

07.06. - 10.06.10

12th Topical Seminar on Innovative Particle and

Radiation Detectors (Siena / Italy)

http://www.bo.infn.it/sminiato/siena10.html

09.06. - 11.06.10

EACTA (Edinburgh / England)

www.eacta.org

15.06. - 18.06.10

Optatec (Frankfurt / Germany)

www.optatec-messe.de

16.06.10

31st Intelligent Sensing Programme

(London / England)

www.sensorsktn.com

17.06.10

UK Clock Club Meeting (Stevenage / England)

www.sensorsktn.com

17.06. - 19.06.10

36. Jahrestagung der Gesellschaft für Neonatologie

und Pädiatrische Intensivmedizin

(Saarbrücken / Germany)

www.gnpi2010.de

21.06. - 26.06.10

BEACH 2010 IX International Conference on

Hyperons, Charm and Beauty Hadrons (Perugia / Italy)

http://www.pg.infn.it/beach2010/

22.06.10

Water Catchments (London / England)

www.qi3.co.uk

23.06. - 24.06.10

Cellular Imaging & Analysis (Dublin / Ireland)

www.europeanrailwayevents.com

25.06. - 26.06.10

2nd European Workshop on Tissue Imaging and

Analysis (Heidelberg / Germany)

29.06. - 01.07.10

Microscience (London / England)

www.rms.org.uk

30.06. - 01.07.10

SwissT meeting fair for automation

(Zurich / Switzerland)

Juli 2010

11.07.-16.07.10

IUPAC XXIII Sy,posium in Photochemistry (Ferrara)

http://web.unife.it/convegni/iupac-photochem-2010/

index.php

21.07.-28.07.10

ICHEP 2010 (Paris / France)

http://www.ichep2010.fr/

August 2010

24.08.-25.08.10

Photon10 (Southampton / England)

www.photon.org.uk

31.08.-04.09.10

ESP (Meeting of European Society of Pathology)

(Krakow / Poland)

www.esp-congress.org

September 2010

01.09.-02.09.10

Drug Discovery (Coventry / England)

www.elrig.org

05.09.-08.09.10

BMSS: Mass Spectrometry in a Changing World

(Cardiff / Wales)

www.bmss.org.uk

06.09.-09.09.10

25th European Photovoltaic Energy conversion

WCPEC-5 (Valencia / Spain)

http://photovoltaic-conference.com

06.09.-10.09.10

TNT 2010 (Braga / Portugal)

http://tntconf.org/conf/index.php

19.09.-26.09.10

MIFOBIO (Carqueiranne / France)

www.rms.org.uk

21.09.-23.09.10

Elektronik 10 (Odense / Denmark)

21.09.-24.09.10

ILMAC (Basel / Switzerland)

http://www.ilmac.ch/

21.09.-25.09.10

SIAPEC 2010 (Bologna / Italy)

http://www.siapec.it/index.php

27.09.-29.09.10

Photochemietagung (Erlangen / Germany)

http://fachgruppe-photochemie.de

39News 2010 Vol. 1

Hamamatsu Photonics Europe

Germany: Hamamatsu Photonics Deutschland GmbH Arzbergerstr. 10, D-82211 Herrsching Phone: +49 (0) 8152 375-0 Fax: +49 (0) 8152 2658 E-mail: [email protected] North-West: (for system products) Phone: +49 (0) 2831 94506 Fax: +49 (0) 2831 94507 E-mail: [email protected] www.hamamatsu.de

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Impressum

Hamamatsu Photonics News

Publisher and copyright:Hamamatsu PhotonicsDeutschland GmbHArzbergerstr. 10, D-82211 Herrsching am Ammersee, GermanyTelephone: (49)8152-375-0Fax: (49)8152-2658

Sitz der Gesellschaft: HerrschingAmtsgericht München HRB 79474Geschäftsführer: Dr. Peter EgglUSt/VAT-Id.: DE128228814http://[email protected]

Editor and responsible for content:Dr. Peter Eggl

Publishing frequency:Bi-annual, Date of this issue June 2010

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