8/10/2019 10B11EC211

1/4

BASIC ELECTRONIC DEVICES AND CIRCUITS

(Core Subject)

Course Code: 10B11EC211 Semester: 2nd

Semester, B. Tech (ECE, CS, IT)

Credits: 4 Contact Hours: L-3, T-1,P-0

Course OverviewThis course introduces the characteristics of electronic devices and their use in fundamental electronic

circuits.The course is designed to keep real-world applications of the electronic circuits, while keeping the

mathematical rigor low level.

Course ObjectivesThe primary objective of this course is to:

1.

Introduce the working, the characteristics and the applications of electronic devices.2. Provide an understanding of working of basic electronic circuits.

3. Introduce the analysis techniques of the electronic circuits to enable the students to designsimple circuits.

4. Build the foundation necessary for future studies.

Course OutcomesUpon successful completion of this course the students would have developed following skills/abilities:

1. Recognize the purpose served by basic electronic circuits.2. Check whether the given circuit would give expected output.

3. Ability to design simple electronic circuits to meet a practical requirement.

Course Contents

Unit Topics References

(chapter number,

page no. etc)

Lec

tur

es

1. SemiconductorsIntrinsic semiconductors (germanium and silicon), Charge

carriers (electrons and holes), Energy-band diagrams,

Extrinsic semiconductors (N-type and P-type and their

representation), Effect of temperature on conductivity. [2L]

[1, Ch. 3 (55-77)];

[2, Ch. 1 (3-10] 2

2. Semiconductor Diodes

a) Unidirectional property, Formation of depletion layer,

Drift current, Diffusion current, PN-junction with no

bias, with forward bias and with reverse bias, Transitionand diffusion capacitances, Varactor diode. [2L]

b) V-I characteristics, Comparison of Si and Ge diodes,

Temperature effects, Diode resistance (static anddynamic), Diode equation, Ideal diode, Circuit model of

a diode [2L]

[1, Ch. 4 (78-89)];

[2, Ch. 1 (10-28)] 4

8/10/2019 10B11EC211

2/4

3 Diode Applications

a) Block diagram of dc power supply, Half-wave and full-

wave (centre tap and bridge) rectifiers, PIV rating of

diode, Performance of half-wave and full-wave

rectifiers, Shunt capacitor filter, Its ripple factor. [2L]

b) Series and Parallel Clippers, Limiters, Clampers,

Voltage Multipliers. [2L]

[1,Ch. 4 (89-107)];[2, Ch.2 (74-80)];

[2, Ch. 2 (81-91)]

4

4 Breakdown Diodes

a) Zener and avalanche breakdown, Zener diode,

Temperature coefficient, Analysis of Zener voltage

regulator, Other applications. [2L]

[1, Ch. 4 (112-

113)]; [2, Ch. 1(37-40)]

2

5 Bipolar Junction Transistor (BJT

a) BJT Structure, Working of a transistor, Transistor

current equation, Collector reverse saturation current,

DC alpha of a transistor. [1L]

b) The three configurations, CB and CE input and output

characteristics, Comparison between threeconfigurations, Basic CE amplifier, DC load line. [2L]

c) Need of biasing a transistor, Choice of operating point,Selection of operating point, Need for bias stabilization,

Fixed bias circuit, Saturation point, Collector-to-base

bias circuit, Emitter-feedback bias circuit, Emitter-biascircuit, Voltage divider bias circuit. [2L]

[1, Ch. 5 (136-174)];

[1, Ch. 7 (216-

241)];[2, Ch. 3 (131-147)];

[2, Ch. 4 (163-

204)]

5

6 Field-Effect Transistors (FETs)

a) Junction Field-Effect Transistor (JFET) : Basic

construction, Pinch-off voltage, Drain saturation

current, Output and transfer characteristics, Voltagecontrolled resistor, JFET parameters, JFET small-signal

amplifier, Its AC analysis. [3L]

b) Metal Oxide Semiconductor Field Effect Transistor(MOSFET) :(No numerical problems)

Depletion MOSFET : Structure, Working principle,

Circuit symbol, Output characteristics.

Enhancement MOSFET : Structure, Formation of

channel, Working principle, Circuit Symbol, Output

characteristics; CMOS and VMOS; Comparisonbetween JFET, MOSFET and BJT. [2L]

[1, Ch. 6 (196-

213)];[2, Ch. 5 (245-

278)]

5

7 Transistor Amplifiera) Meaning of amplification, A practical CE amplifier,

Need of DC analysis before AC analysis, Role of

capacitors. [2L]

b) Hybrid parameters of a BJT, Circuit model, Simplified

circuit model, Equivalent circuit method of AC

analysis. [2L]

[1, Ch. 8 (259-

281)];[2, Ch. 8 (389-

399)]

4

8 Feedback in Amplifiers

Basic concepts of feedback, Types of feedback, Voltage

gain of feedback amplifier. Effects of negative feedback on

amplifier characteristics. [2L]

[1, Ch. 12 (381-399];

[2, Ch. 17 (821-

828)]

2

8/10/2019 10B11EC211

3/4

9 Sinusoidal Oscillators

Need of oscillators, Types of oscillators, Positive feedback

to produce oscillations, The starting voltage, Tunedcollector oscillator, Hartley oscillator, Colpitts oscillator,

RC-phase shift oscillator, Wein bridge oscillator, Crystal

oscillator. [3L]

[1, Ch. 13 (404-

425)];[2, Ch. 17 (837-

849)]

3

10 Operational AmplifiersSchematic symbol of op-amp, Ideal op-amp, Inverting

amplifier, Virtual ground, Noninverting amplifier, Adders,

Subtractor, Voltage Follower. [2L]

[2, Ch. 13 (675-

687)]2

11 Number Systems

Decimal or Denary system, Binary system, Binary-to-decimal conversion, Decimal-to-binary conversion, Octal

number system, Decimal-to-octal conversion, Octal-to-

binary conversion, Binary-to-octal conversion,

Hexadecimal number system, Hex-to-decimal conversion,Decimal-to-hex conversion, Hex-to-binary conversion,

Binary-to-hex conversion, Hexadecimal-octal conversion.[2L]

[3, Ch. 1 (1-12)] 2

12 Logic Gates

Three basic operations of Boolean algebra, OR gate, AND

gate, NOT gate, NOR and NAND gates, Concept of

universal gate, Realization of logic functions usinguniversal gates (NAND, NOR), XOR and XNOR gates.

[2L]

[3, Ch2 (53-59)] 2

13 Boolean Theorems

a) Single variable theorems, Multivariable theorems

(Commutative, Associative, Distributive laws), DeMorgans theorems, Complement of an Expression,

Evaluation of Boolean expressions, Synthesis of

Boolean expressions. [2L]

b) Canonical forms (SOP from, POS form), Three-

variable Canonical expressions, Interconversions of

canonical forms, Simplification of Booleanexpressions using algebraic methods, Minimization

using Karnaugh map, Dont care conditions. [3L]

[3, Ch. 2 (35-49)];

[3, Ch. 3 (64-89)]5

Total Periods 42

8/10/2019 10B11EC211

4/4

Evaluation Scheme

Mid Term 30 MarksEnd Term 45 Marks

Internal Assessment 25 Marks

Total 100 Marks

Internal Assessment breakup

Assignment 5 Marks

Quiz 5 Marks

Attendance 5 Marks

Class Response 5 Marks

Self Assessment of T-1 5 Marks

Total 25 Marks

Text and Reference Books

1. [Text]N N Bhargava, Basic Electronics and Linear Circuits McGraw Hill Education, 2ndEditon, 2013.

2. [Text] Boylstad and Nashelsky, Electronic Devices and Circuit Theory, PHI, 8e, 2001.

3. [Text] Morris Mano, Digital Design, PHI, 3e, 2002.