19
Application NoteNJG1133MD7 1/19 2.1GHz/800MHz/1.9GHz Bands Application 1-1 Summary The characterisitics of 2.1GHz/800MHz/1.9GHz bands have evaluated as follows. The evaluation circuit structure and measured data are reviewed. 1-2-1 Measurement data of assembled evaluation board DC Characteristics General conditions : V DD =2.8V, Ta=+25 o C LNA Supply Voltage V DD 2.8 V Control Voltage 1 (High) V CTL 1(H) 1.8 V Control Voltage 1 (Low) V CTL 1(L) 0 V Control Voltage 2 (High) V CTL 2(H) 1.8 V Control Voltage 2 (Low) V CTL 2(L) 0 V Control Voltage 3 (High) V CTL 3(H) 1.8 V Control Voltage 3 (Low) V CTL 3(L) 0 V LNA Operating Current 1 (2.1GHz High Gain Mode) LNA Operating Current 2 (800MHz High Gain Mode) LNA Operating Current 3 (1.9GHz High Gain Mode) LNA Operating Current 4 (Low Gain Mode) Control Current 1 I CTL 1 V CTL 1=1.8V 5.0 uA Control Current 2 I CTL 2 V CTL 2=1.8V 4.9 uA Control Current 3 I CTL 3 V CTL 3=1.8V 5.0 uA V CTL 1=1.8V, V CTL 2=0V, V CTL 3=1.8V V CTL 1=0V, V CTL 2=1.8V, V CTL 3=1.8V V CTL 3=0V I DD 1 I DD 2 I DD 3 I DD 4 Parameter Symbol Condition V CTL 1=0V, V CTL 2=0V, V CTL 3=1.8V Units 2.51 mA Measurement data 32.2 2.43 mA mA uA 2.54

2.1GHz/800MHz/1.9GHz Bands Application · IIP3_2 +10.8~+11.8 dBm RF IN VSWR 2 VSWRi_2 1.21~1.43 - RF OUT VSWR 2 VSWRo_2 1.62~1.76 - Parameter Condition Symbol Units Measurement Data

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Page 1: 2.1GHz/800MHz/1.9GHz Bands Application · IIP3_2 +10.8~+11.8 dBm RF IN VSWR 2 VSWRi_2 1.21~1.43 - RF OUT VSWR 2 VSWRo_2 1.62~1.76 - Parameter Condition Symbol Units Measurement Data

Application Note1111 NJG1133MD7

1/19

2.1GHz/800MHz/1.9GHz Bands Application

1-1 Summary

The characterisitics of 2.1GHz/800MHz/1.9GHz bands have evaluated as follows. The evaluation

circuit structure and measured data are reviewed.

1-2-1 Measurement data of assembled evaluation board

DC Characteristics

General conditions : VDD=2.8V, Ta=+25oC

LNA Supply Voltage VDD 2.8 V

Control Voltage 1 (High) VCTL1(H) 1.8 V

Control Voltage 1 (Low) VCTL1(L) 0 V

Control Voltage 2 (High) VCTL2(H) 1.8 V

Control Voltage 2 (Low) VCTL2(L) 0 V

Control Voltage 3 (High) VCTL3(H) 1.8 V

Control Voltage 3 (Low) VCTL3(L) 0 V

LNA Operating Current 1(2.1GHz High Gain Mode)LNA Operating Current 2(800MHz High Gain Mode)LNA Operating Current 3(1.9GHz High Gain Mode)LNA Operating Current 4(Low Gain Mode)

Control Current 1 ICTL1 VCTL1=1.8V 5.0 uA

Control Current 2 ICTL2 VCTL2=1.8V 4.9 uA

Control Current 3 ICTL3 VCTL3=1.8V 5.0 uA

VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V

VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V

VCTL3=0V

IDD1

IDD2

IDD3

IDD4

Parameter Symbol Condition

VCTL1=0V, VCTL2=0V, VCTL3=1.8V

Units

2.51 mA

Measurement

data

32.2

2.43

mA

mA

uA

2.54

Page 2: 2.1GHz/800MHz/1.9GHz Bands Application · IIP3_2 +10.8~+11.8 dBm RF IN VSWR 2 VSWRi_2 1.21~1.43 - RF OUT VSWR 2 VSWRo_2 1.62~1.76 - Parameter Condition Symbol Units Measurement Data

Application Note1111 NJG1133MD7

2/19

1-2-2 Measurement data of assembled evaluation board

RF Characteristics 1 (2.1GHz Band High Gain Mode)

Small Signal Gain 1Exclude Input&Output PCB,

Connector Losses (0.45dB)Gain 1 15.7~16.0 dB

Isolation 1Exclude Input&Output PCB,

Connector Losses (0.45dB)ISO 1 -29.9~-29.3 dB

Noise Figure 1Exclude PCB, Connector

Losses (0.09dB)NF 1 1.29~1.30 dB

Input Power 1dB

Compression 1P-1dB(IN)_1 -9.6~-9.2 dBm

Input 3rd Order

Intercept Point 1

f1=fRF, f2=fRF+100kHz,

Pin=-30dBmIIP3H1_1 -0.3~-0.1 dBm

RF IN VSWR 1 VSWRi_1 1.38~1.63 -

RF OUT VSWR 1 VSWRo_1 1.86~1.92 -

RF Characteristics 2 (2.1GHz Band Low Gain Mode)

Small Signal Gain 2Exclude Input&Output PCB,

Connector Losses (0.45dB)Gain 2 -3.6~-3.5 dB

Isolation 2Exclude Input&Output PCB,

Connector Losses (0.45dB)ISO 2 -3.6~-3.5 dB

Noise Figure 2Exclude PCB, Connector

Losses (0.09dB)NF 2 3.4~4.1 dB

Input Power 1dB

Compression 2P-1dB(IN)_2 +14.0~+14.3 dBm

Input 3rd Order

Intercept Point 2

f1=fRF, f2=fRF+100kHz,

Pin=-16dBmIIP3_2 +10.8~+11.8 dBm

RF IN VSWR 2 VSWRi_2 1.21~1.43 -

RF OUT VSWR 2 VSWRo_2 1.62~1.76 -

UnitsParameter Condition SymbolMeasurement

Data

General condition : VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V, fRF=2110~2170MHz,

Ta=+25oC, Zs=Zl=50ohm, with application circuit

Parameter SymbolCondition

General condition : VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V, fRF=2110~2170MHz,

UnitsMeasurement

Data

Ta=+25oC, Zs=Zl=50ohm, with application circuit

Page 3: 2.1GHz/800MHz/1.9GHz Bands Application · IIP3_2 +10.8~+11.8 dBm RF IN VSWR 2 VSWRi_2 1.21~1.43 - RF OUT VSWR 2 VSWRo_2 1.62~1.76 - Parameter Condition Symbol Units Measurement Data

Application Note1111 NJG1133MD7

3/19

1-2-3 Measurement data of assembled evaluation board

RF Characteristics 3 (800MHz Band High Gain Mode)

Small Signal Gain 3Exclude Input&Output PCB,

Connector Losses (0.22dB)Gain 3 15.9~16.0 dB

Isolation 3Exclude Input&Output PCB,

Connector Losses (0.22dB)ISO 3 -34.7~-34.4 dB

Noise Figure 3Exclude PCB, Connector

Losses (0.06dB)NF 3 1.31~1.44 dB

Input Power 1dB

Compression 3P-1dB(IN)_3 -9.4~-9.3 dBm

Input 3rd Order

Intercept Point 3

f1=fRF, f2=fRF+100kHz,

Pin=-30dBmIIP3H1_3 -2.8~-2.1 dBm

RF IN VSWR 3 VSWRi_3 1.62~1.73 -

RF OUT VSWR 3 VSWRo_3 2.21~2.34 -

RF Characteristics 4 (800MHz Band Low Gain Mode)

Small Signal Gain 4Exclude Input&Output PCB,

Connector Losses (0.22dB)Gain 4 -3.1~-3.0 dB

Isolation 4Exclude Input&Output PCB,

Connector Losses (0.22dB)ISO 4 -3.1~-3.0 dB

Noise Figure 4Exclude PCB, Connector

Losses (0.06dB)NF 4 3.0~3.9 dB

Input Power 1dB

Compression 4P-1dB(IN)_4 +17.1~+17.7 dBm

Input 3rd Order

Intercept Point 4

f1=fRF, f2=fRF+100kHz,

Pin=-20dBmIIP3_4 +13.8~+14.5 dBm

RF IN VSWR 4 VSWRi_4 1.26~1.38 -

RF OUT VSWR 4 VSWRo_4 1.66~1.75 -

UnitsParameter Condition SymbolMeasurement

Data

General condition : VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V, fRF=869~900MHz,

Ta=+25oC, Zs=Zl=50ohm, with application circuit

Parameter SymbolCondition

General condition : VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V, fRF=869~900MHz,

UnitsMeasurement

Data

Ta=+25oC, Zs=Zl=50ohm, with application circuit

Page 4: 2.1GHz/800MHz/1.9GHz Bands Application · IIP3_2 +10.8~+11.8 dBm RF IN VSWR 2 VSWRi_2 1.21~1.43 - RF OUT VSWR 2 VSWRo_2 1.62~1.76 - Parameter Condition Symbol Units Measurement Data

Application Note1111 NJG1133MD7

4/19

1-2-4 Measurement data of assembled evaluation board

RF Characteristics 5 (1.9GHz Band High Gain Mode)

Small Signal Gain 5Exclude Input&Output PCB,

Connector Losses (0.41dB)Gain 5 15.5~16.0 dB

Isolation 5Exclude Input&Output PCB,

Connector Losses (0.41dB)ISO 5 -26.1~-25.8 dB

Noise Figure 5Exclude PCB, Connector

Losses (0.10dB)NF 5 1.36~1.38 dB

Input Power 1dB

Compression 5P-1dB(IN)_5 -8.6~-8.1 dBm

Input 3rd Order

Intercept Point 5

f1=fRF, f2=fRF+100kHz,

Pin=-30dBmIIP3H1_5 +0.3~+1.0 dBm

RF IN VSWR 5 VSWRi_5 1.85~1.99 -

RF OUT VSWR 5 VSWRo_5 1.63~1.76 -

RF Characteristics 6 (1.9GHz Band Low Gain Mode)

Small Signal Gain 6Exclude Input&Output PCB,

Connector Losses (0.41dB)Gain 6 -4.2~-4.1 dB

Isolation 6Exclude Input&Output PCB,

Connector Losses (0.41dB)ISO 6 -4.2~-4.1 dB

Noise Figure 6Exclude PCB, Connector

Losses (0.10dB)NF 6 3.8~4.7 dB

Input Power 1dB

Compression 6P-1dB(IN)_6 +16.3~+16.8 dBm

Input 3rd Order

Intercept Point 6

f1=fRF, f2=fRF+100kHz,

Pin=-16dBmIIP3_6 +14.1~+14.7 dBm

RF IN VSWR 6 VSWRi_6 1.56~1.61 -

RF OUT VSWR 6 VSWRo_6 2.22~2.26 -

UnitsParameter Condition SymbolMeasurement

Data

General condition : VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V, fRF=1930~1990MHz,

Ta=+25oC, Zs=Zl=50ohm, with application circuit

Parameter SymbolCondition

General condition : VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V, fRF=1930~1990MHz,

UnitsMeasurement

Data

Ta=+25oC, Zs=Zl=50ohm, with application circuit

Page 5: 2.1GHz/800MHz/1.9GHz Bands Application · IIP3_2 +10.8~+11.8 dBm RF IN VSWR 2 VSWRi_2 1.21~1.43 - RF OUT VSWR 2 VSWRo_2 1.62~1.76 - Parameter Condition Symbol Units Measurement Data

Application Note1111 NJG1133MD7

5/19

1-3 Pin configuration

1-4 Truth table

VCTL terminal function

VCTL1, VCTL2:Band Select (2.1GHz or 800MHz or 1.9GHz)

VCTL3:RX ATT Select (High Gain mode or Low Gain mode)

13

RFIN2

RFIN1 RFOUT2

GND

VCTL2

VCTL3

VCTL1

Logic Circuit

RFOUT3

RFIN3

RFOUT1

1.9GHz Band

Bias Circuit

Bias Circuit

Bias Circuit

GND

2.1GHz Band

800MHz Band

6

5

7

14

12

13

GND 2 4 1 3

10 8 11 9 GND GND

VCTL1 VCTL2 VCTL3

(Band Sel1) (Band Sel2) (RX ATT) LNA IDD Bypass LNA IDD Bypass LNA IDD Bypass

L L L OFF ON OFF ON OFF ONL L H ON OFF OFF OFF OFF OFFH L L OFF ON OFF ON OFF ON

H L H OFF OFF ON OFF OFF OFFL H L OFF ON OFF ON OFF ONL H H OFF OFF OFF OFF ON OFFH H L OFF ON OFF ON OFF ON

H H H OFF OFF OFF OFF ON OFF

Control Voltage State

2.1GHz Band 800MHz Band 1.9GHz Band

Page 6: 2.1GHz/800MHz/1.9GHz Bands Application · IIP3_2 +10.8~+11.8 dBm RF IN VSWR 2 VSWRi_2 1.21~1.43 - RF OUT VSWR 2 VSWRo_2 1.62~1.76 - Parameter Condition Symbol Units Measurement Data

Application Note1111 NJG1133MD7

6/19

1-5-1 Typical characteristics (2.1GHz Band High Gain Mode)

Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V

-30

-25

-20

-15

-10

-5

0

5

10

-40 -30 -20 -10 0 10

2.1GHz @High Gain

Pout vs. Pin(f=2140MHz)

Pin (dBm)

Pout

Pout (dBm)

P-1dB(IN)=-9.3dBm

0

5

10

15

20

-40 -30 -20 -10 0 10

2.1GHz @High Gain

Gain, IDD vs. Pin(f=2140MHz)

0

2

4

6

8

Pin (dBm)

Gain

Gain (dB)

P-1dB(IN)=-9.3dBm

IDD (mA)

IDD

-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10

2.1GHz @High Gain

Pout, IM3 vs. Pin(f1=2140MHz, f2=f1+100kHz)

Pin (dBm)

Pout

Pout, IM3 (dBm)

IIP3=-0.1dBm

IM3

12

13

14

15

16

17

18

19

20

2.1 2.12 2.14 2.16 2.18 2.2

2.1GHz @High Gain

OIP3, IIP3 vs. frequency(f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-30dBm)

-2

-1

0

1

2

3

4

5

6

frequency (GHz)

OIP3

OIP3 (dBm)

IIP3IIP3 (dBm)

0

0.5

1

1.5

2

2.5

3

3.5

4

2 2.05 2.1 2.15 2.2 2.25 2.3

2.1GHz @High Gain

NF, Gain vs. frequency(f=2.0~2.3GHz)

4

6

8

10

12

14

16

18

20

Gain (dB)

frequency (GHz)

Gain

NF

NF (dB)

(Exclude PCB, Connector Losses)

0

5

10

15

20

0 5 10 15 20

2.1GHz @High Gain

k factor vs. frequency(f=50MHz~20GHz)

frequency (GHz)

k factor

Page 7: 2.1GHz/800MHz/1.9GHz Bands Application · IIP3_2 +10.8~+11.8 dBm RF IN VSWR 2 VSWRi_2 1.21~1.43 - RF OUT VSWR 2 VSWRo_2 1.62~1.76 - Parameter Condition Symbol Units Measurement Data

Application Note1111 NJG1133MD7

7/19

1-5-2 Typical characteristics (2.1GHz Band High Gain Mode)

S11, S22 S21, S12

VSWR Zin, Zout

S11, S22

(f=50MHz~20GHz)

S21, S12

(f=50MHz~20GHz)

Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V

Page 8: 2.1GHz/800MHz/1.9GHz Bands Application · IIP3_2 +10.8~+11.8 dBm RF IN VSWR 2 VSWRi_2 1.21~1.43 - RF OUT VSWR 2 VSWRo_2 1.62~1.76 - Parameter Condition Symbol Units Measurement Data

Application Note1111 NJG1133MD7

8/19

1-5-3 Typical characteristics (2.1GHz Band Low Gain Mode)

Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V

-50

-40

-30

-20

-10

0

10

20

-40 -30 -20 -10 0 10 20

2.1GHz @Low Gain

Pout vs. Pin(f=2140MHz)

Pin (dBm)

Pout

Pout (dBm)

P-1dB(IN)=+14.1dBm

-12

-10

-8

-6

-4

-2

0

-40 -30 -20 -10 0 10 20

2.1GHz @Low Gain

Gain, IDD vs. Pin(f=2140MHz)

25

30

35

40

45

50

55

Pin (dBm)

Gain

Gain (dB)

P-1dB(IN)=+14.1dBm

IDD (uA)

IDD

-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10 20

2.1GHz @Low Gain

Pout, IM3 vs. Pin(f1=2140MHz, f2=f1+100kHz)

Pin (dBm)

Pout

Pout, IM3 (dBm)

IIP3=+11.2dBm

IM3

6

7

8

9

10

11

12

13

14

2.1 2.12 2.14 2.16 2.18 2.2

2.1GHz @Low Gain

OIP3, IIP3 vs. frequency(f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-16dBm)

6

7

8

9

10

11

12

13

14

frequency (GHz)

OIP3

OIP3 (dBm)

IIP3

IIP3 (dBm)

0

2

4

6

8

10

12

14

2 2.05 2.1 2.15 2.2 2.25 2.3

2.1GHz @Low Gain

NF, Gain vs. frequency(f=2.0~2.3GHz)

-14

-12

-10

-8

-6

-4

-2

0

Gain (dB)

frequency (GHz)

Gain

NFNF (dB)

(Exclude PCB, Connector Losses)

0

5

10

15

20

0 5 10 15 20

2.1GHz @Low Gain

k factor vs. frequency(f=50MHz~20GHz)

frequency (GHz)

k factor

Page 9: 2.1GHz/800MHz/1.9GHz Bands Application · IIP3_2 +10.8~+11.8 dBm RF IN VSWR 2 VSWRi_2 1.21~1.43 - RF OUT VSWR 2 VSWRo_2 1.62~1.76 - Parameter Condition Symbol Units Measurement Data

Application Note1111 NJG1133MD7

9/19

1-5-4 Typical characteristics (2.1GHz Band Low Gain Mode)

S11, S22 S21, S12

VSWR Zin, Zout

S11, S22

(f=50MHz~20GHz)

S21, S12

(f=50MHz~20GHz)

Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V

Page 10: 2.1GHz/800MHz/1.9GHz Bands Application · IIP3_2 +10.8~+11.8 dBm RF IN VSWR 2 VSWRi_2 1.21~1.43 - RF OUT VSWR 2 VSWRo_2 1.62~1.76 - Parameter Condition Symbol Units Measurement Data

Application Note1111 NJG1133MD7

10/19

1-5-5 Typical characteristics (800MHz Band High Gain Mode)

Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V

-30

-25

-20

-15

-10

-5

0

5

10

-40 -30 -20 -10 0 10

800MHz @High Gain

Pout vs. Pin(f=885MHz)

Pin (dBm)

Pout

Pout (dBm)

P-1dB(IN)=-9.3dBm

0

5

10

15

20

-40 -30 -20 -10 0 10

800MHz @High Gain

Gain, IDD vs. Pin(f=885MHz)

0

2

4

6

8

Pin (dBm)

Gain

Gain (dB)

P-1dB(IN)=-9.3dBm

IDD (mA)

IDD

-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10

800MHz @High Gain

Pout, IM3 vs. Pin(f1=885MHz, f2=f1+100kHz)

Pin (dBm)

Pout

Pout, IM3 (dBm)

IIP3=-2.1dBm

IM3

9

10

11

12

13

14

15

16

17

860 870 880 890 900 910

800MHz @High Gain

OIP3, IIP3 vs. frequency(f1=860~910MHz, f2=f1+100kHz, Pin=-30dBm)

-4

-3

-2

-1

0

1

2

3

4

frequency (MHz)

OIP3

OIP3 (dBm)

IIP3IIP3 (dBm)

0

0.5

1

1.5

2

2.5

3

3.5

4

750 800 850 900 950 1000

800MHz @High Gain

NF, Gain vs. frequency(f=750~1000MHz)

4

6

8

10

12

14

16

18

20

Gain (dB)

frequency (MHz)

Gain

NF

NF (dB)

(Exclude PCB, Connector Losses)

0

5

10

15

20

0 5 10 15 20

800MHz @High Gain

k factor vs. frequency(f=50MHz~20GHz)

frequency (GHz)

k factor

Page 11: 2.1GHz/800MHz/1.9GHz Bands Application · IIP3_2 +10.8~+11.8 dBm RF IN VSWR 2 VSWRi_2 1.21~1.43 - RF OUT VSWR 2 VSWRo_2 1.62~1.76 - Parameter Condition Symbol Units Measurement Data

Application Note1111 NJG1133MD7

11/19

1-5-6 Typical characteristics (800MHz Band High Gain Mode)

S11, S22 S21, S12

VSWR Zin, Zout

S11, S22

(f=50MHz~20GHz)

S21, S12

(f=50MHz~20GHz)

Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V

Page 12: 2.1GHz/800MHz/1.9GHz Bands Application · IIP3_2 +10.8~+11.8 dBm RF IN VSWR 2 VSWRi_2 1.21~1.43 - RF OUT VSWR 2 VSWRo_2 1.62~1.76 - Parameter Condition Symbol Units Measurement Data

Application Note1111 NJG1133MD7

12/19

1-5-7 Typical characteristics (800MHz Band Low Gain Mode)

Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V

-50

-40

-30

-20

-10

0

10

20

-40 -30 -20 -10 0 10 20

800MHz @Low Gain

Pout vs. Pin(f=885MHz)

Pin (dBm)

Pout

Pout (dBm)

P-1dB(IN)=+17.7dBm

-12

-10

-8

-6

-4

-2

0

-40 -30 -20 -10 0 10 20

800MHz @Low Gain

Gain, IDD vs. Pin(f=885MHz)

25

30

35

40

45

50

55

Pin (dBm)

Gain

Gain (dB)

P-1dB(IN)=+17.7dBm

IDD (uA)

IDD

-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10 20

800MHz @Low Gain

Pout, IM3 vs. Pin(f1=885MHz, f2=f1+100kHz)

Pin (dBm)

Pout

Pout, IM3 (dBm)

IIP3=+14.5dBm

IM3

9

10

11

12

13

14

15

16

17

860 870 880 890 900 910

800MHz @Low Gain

OIP3, IIP3 vs. frequency(f1=860~910MHz, f2=f1+100kHz, Pin=-20dBm)

9

10

11

12

13

14

15

16

17

frequency (MHz)

OIP3

OIP3 (dBm) IIP3

IIP3 (dBm)

0

2

4

6

8

10

12

14

750 800 850 900 950 1000

800MHz @Low Gain

NF, Gain vs. frequency(f=750~1000MHz)

-14

-12

-10

-8

-6

-4

-2

0

Gain (dB)

frequency (MHz)

Gain

NF

NF (dB)

(Exclude PCB, Connector Losses)

0

5

10

15

20

0 5 10 15 20

800MHz @Low Gain

k factor vs. frequency(f=50MHz~20GHz)

frequency (GHz)

k factor

Page 13: 2.1GHz/800MHz/1.9GHz Bands Application · IIP3_2 +10.8~+11.8 dBm RF IN VSWR 2 VSWRi_2 1.21~1.43 - RF OUT VSWR 2 VSWRo_2 1.62~1.76 - Parameter Condition Symbol Units Measurement Data

Application Note1111 NJG1133MD7

13/19

1-5-8 Typical characteristics (800MHz Band Low Gain Mode)

S11, S22 S21, S12

VSWR Zin, Zout

S11, S22

(f=50MHz~20GHz)

S21, S12

(f=50MHz~20GHz)

Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V

Page 14: 2.1GHz/800MHz/1.9GHz Bands Application · IIP3_2 +10.8~+11.8 dBm RF IN VSWR 2 VSWRi_2 1.21~1.43 - RF OUT VSWR 2 VSWRo_2 1.62~1.76 - Parameter Condition Symbol Units Measurement Data

Application Note1111 NJG1133MD7

14/19

1-5-9 Typical characteristics (1.9GHz Band High Gain Mode)

Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V

-30

-25

-20

-15

-10

-5

0

5

10

-40 -30 -20 -10 0 10

1.9GHz @High Gain

Pout vs. Pin(f=1960MHz)

Pin (dBm)

Pout

Pout (dBm)

P-1dB(IN)=-8.4dBm

0

5

10

15

20

-40 -30 -20 -10 0 10

1.9GHz @High Gain

Gain, IDD vs. Pin(f=1960MHz)

0

2

4

6

8

Pin (dBm)

Gain

Gain (dB)

P-1dB(IN)=-8.4dBm

IDD (mA)

IDD

10

11

12

13

14

15

16

17

18

1.90 1.92 1.94 1.96 1.98 2.00

1.9GHz @High Gain

OIP3, IIP3 vs. frequency(f1=1.9~2.0GHz, f2=f1+100kHz, Pin=-30dBm)

-3

-2

-1

0

1

2

3

4

5

frequency (GHz)

OIP3

OIP3 (dBm)

IIP3

IIP3 (dBm)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

1.80 1.85 1.90 1.95 2.00 2.05 2.10

1.9GHz @High Gain

NF, Gain vs. frequency(f=1.8~2.1GHz)

4

6

8

10

12

14

16

18

20

Gain (dB)

frequency (GHz)

Gain

NF

NF (dB)

(Exclude PCB, Connector Losses)

0

5

10

15

20

0 5 10 15 20

1.9GHz @High Gain

k factor vs. frequency(f=50MHz~20GHz)

frequency (GHz)

k factor

-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10

1.9GHz @High Gain

Pout, IM3 vs. Pin(f1=1960MHz, f2=f1+100kHz)

Pin (dBm)

Pout

Pout, IM3 (dBm)

IIP3=+0.6dBm

IM3

Page 15: 2.1GHz/800MHz/1.9GHz Bands Application · IIP3_2 +10.8~+11.8 dBm RF IN VSWR 2 VSWRi_2 1.21~1.43 - RF OUT VSWR 2 VSWRo_2 1.62~1.76 - Parameter Condition Symbol Units Measurement Data

Application Note1111 NJG1133MD7

15/19

1-5-10 Typical characteristics (1.9GHz Band High Gain Mode)

Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V

S11, S22 S21, S12

VSWR Zin, Zout

S11, S22

(f=50MHz~20GHz)

S21, S12

(f=50MHz~20GHz)

Page 16: 2.1GHz/800MHz/1.9GHz Bands Application · IIP3_2 +10.8~+11.8 dBm RF IN VSWR 2 VSWRi_2 1.21~1.43 - RF OUT VSWR 2 VSWRo_2 1.62~1.76 - Parameter Condition Symbol Units Measurement Data

Application Note1111 NJG1133MD7

16/19

1-5-11 Typical characteristics (1.9GHz Band Low Gain Mode)

Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V

-50

-40

-30

-20

-10

0

10

20

-40 -30 -20 -10 0 10 20

1.9GHz @Low Gain

Pout vs. Pin(f=1960MHz)

Pin (dBm)

Pout

Pout (dBm)

P-1dB(IN)=+16.6dBm

-25

-20

-15

-10

-5

0

-40 -30 -20 -10 0 10 20

1.9GHz @Low Gain

Gain, IDD vs. Pin(f=1960MHz)

-200

-100

0

100

200

300

Pin (dBm)

Gain

Gain (dB)

P-1dB(IN)=+16.6dBm

IDD (uA)

IDD

8

9

10

11

12

13

14

15

16

1.90 1.92 1.94 1.96 1.98 2.00

1.9GHz @Low Gain

OIP3, IIP3 vs. frequency(f1=1.9~2.0GHz, f2=f1+100kHz, Pin=-16dBm)

10

11

12

13

14

15

16

17

18

frequency (GHz)

OIP3

OIP3 (dBm) IIP3

IIP3 (dBm)

0

5

10

15

20

0 5 10 15 20

1.9GHz @Low Gain

k factor vs. frequency(f=50MHz~20GHz)

frequency (GHz)

k factor

-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10 20

1.9GHz @Low Gain

Pout, IM3 vs. Pin(f1=1960MHz, f2=f1+100kHz)

Pin (dBm)

Pout

Pout, IM3 (dBm)

IIP3=+14.6dBm

IM3

0

2

4

6

8

10

12

14

1.80 1.85 1.90 1.95 2.00 2.05 2.10

1.9GHz @Low Gain

NF, Gain vs. frequency(f=1.8~2.1GHz)

-14

-12

-10

-8

-6

-4

-2

0

Gain (dB)

frequency (GHz)

Gain

NF

NF (dB)

(Exclude PCB, Connector Losses)

Page 17: 2.1GHz/800MHz/1.9GHz Bands Application · IIP3_2 +10.8~+11.8 dBm RF IN VSWR 2 VSWRi_2 1.21~1.43 - RF OUT VSWR 2 VSWRo_2 1.62~1.76 - Parameter Condition Symbol Units Measurement Data

Application Note1111 NJG1133MD7

17/19

1-5-12 Typical characteristics (1.9GHz Band Low Gain Mode)

Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V

S11, S22 S21, S12

VSWR Zin, Zout

S11, S22

(f=50MHz~20GHz)

S21, S12

(f=50MHz~20GHz)

Page 18: 2.1GHz/800MHz/1.9GHz Bands Application · IIP3_2 +10.8~+11.8 dBm RF IN VSWR 2 VSWRi_2 1.21~1.43 - RF OUT VSWR 2 VSWRo_2 1.62~1.76 - Parameter Condition Symbol Units Measurement Data

Application Note1111 NJG1133MD7

18/19

1-6 Application circuit

Parts ID Comments

L1, L2, L4 ~L9 MURATA (LQP03T Series)

L3 TDK (MLK0603 Series)

C1~C5 MURATA (GRM03 Series)

(Top View)

RF OUT3

(1.9GHz )

RF OUT2

(2.1GHz)

RF OUT1

(800MHz)

VCTL3=0 or 1.8V

(RX ATT)

VCTL2=0 or 1.8V

(Band Sel2)

VCTL1=0 or 1.8V

(Band Sel1)

RF IN3

(1.9GHz)

RF IN2

(2.1GHz )

RF IN1

(800MHz)

13

RFIN2

RFIN1RFOUT2

GND

VCTL2

VCTL3

VCTL1

Logic

Circuit

RFOUT3

RFIN3

RFOUT1

1.9GHz Band

Bias

Circuit

Bias

Circuit

Bias

Circuit

GND

2.1GHz Band

800MHz Band

6

5

7

14

12

13

GND2 41 3

10 811 9GNDGND

L1

12nH

L2

8.2nH

L3

10nH

L4

2.4nH

L5

1.6nH

L6

2.4nH

L7

2.9nH

L8

0.9nH

L9

2.9nH

VDD=2.7V

C1

2.0pF

C2

2.0pF

C3

0.01uF

C5

0.01uF

C4

3.0pF

Parts List

Page 19: 2.1GHz/800MHz/1.9GHz Bands Application · IIP3_2 +10.8~+11.8 dBm RF IN VSWR 2 VSWRi_2 1.21~1.43 - RF OUT VSWR 2 VSWRo_2 1.62~1.76 - Parameter Condition Symbol Units Measurement Data

Application Note1111 NJG1133MD7

19/19

1-7 Evaluation board

(Top View)

RF IN2 (2.1GHz)

VDD

VCTL1

RF IN1 (800MHz)

RF OUT1 (800MHz)

RF OUT3 (1.9GHz)

VCTL2

RF IN3 (1.9GHz)

VCTL3

RF OUT2 (2.1GHz)

VDD

L1

L2

L3 L5

L4

L6 L8

L7

L9

C1

C2

C3

C5 C4

PCB (FR-4):

t=0.2mm

MICROSTRIP LINE WIDTH=0.4mm (Z0=50ohm)

PCB SIZE=35.4mm x 17.0mm

CAUTION

In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC.