2SC5127

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Power Transistors

2SC5127, 2SC5127ASilicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

s Featuresq High-speed switching

q High collector to base voltage VCBOq Wide area of safe operation (ASO)

q Full-pack package with outstanding insulation, which can be in-

stalled to the heat sink with one screw

s Absolute Maximum Ratings (TC=25C)

Parameter

Collector to

base voltage

Collector to

emitter voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCES

VCEO

VEBO

ICP

IC

IB

PC

Tj

Tstg

Ratings

800

900

800

900

500

8

3.0

1.5

0.5

25

2

150

55 to +150

Unit

V

V

V

V

A

A

A

W

C

C

2SC5127

2SC5127A

2SC5127

2SC5127A

TC=25C

Ta=25C

s Electrical Characteristics (TC=25C)

Parameter

Collector cutoff

current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

ICBO

IEBO

VCEO

hFE1

hFE2

VCE(sat)

VBE(sat)

fT

ton

tstg

tf

Conditions

VCB = 800V, IE = 0

VCB = 900V, IE = 0

VEB = 5V, IC = 0

IC = 10mA, IB = 0

VCE = 5V, IC = 0.1A

VCE = 5V, IC = 0.6A

IC = 0.6A, IB = 0.17A

IC = 0.6A, IB = 0.17A

VCE = 10V, IC = 0.1A, f = 1MHz

IC = 0.6A, IB1 = 0.17A, IB2 = 0.34A,

VCC = 200V

min

500

15

8

typ

20

max

100

100

100

1.0

1.5

1.0

3.0

0.3

Unit

A

A

V

V

V

MHz

s

s

s

2SC5127

2SC5127A

Unit: mm

1:Base

2:Collector

3:Emitter

TO220E Full Pack Package

9.90.3

2 31

4.60.2

2.90.2

2.60.1

2.540.2

0.750.1

1.20.15

5.080.4

15.0

0.3

13.7

+0.5

0.2

3.20.1

3.0

0.2

8.0

0.2

4.1

0.2

SolderDip

1.450.15 0.70.1

7

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Power Transistors 2SC5127/2SC5127A

PC Ta IC VCE VCE(sat) IC

VBE(sat) IC hFE IC Cob VCB

fT IC ton, tstg, tf IC Area of safe operation (ASO)

0 16040 12080 14020 100600

40

30

10

20

(1)

(3)

(4)

(2)

(1) TC=Ta

(2) With a 100 100 2mmAl heat sink

(3) With a 50 50 2mmAl heat sink

(4) Without heat sink(PC=2W)

Ambient temperature Ta (C)

Collectorpowerdissipation

PC

(W)

0 121082 640

1.2

1.0

0.8

0.6

0.4

0.2

TC=25C

100mA

80mA

60mA

40mA

20mA

10mA

IB=150mA

Collector to emitter voltage VCE (V)

Collectorcurrent

IC

(A)

0.01 0.1 1 100.03 0.3 30.01

0.03

0.1

0.3

1

3

10

30

100IC/IB=5

TC=100C

25C

25C

Collector current IC (A)

Collectortoemittersaturationvo

ltage

VCE(sat)

(V)

0.01 0.1 1 100.03 0.3 30.1

100

10

1

0.3

3

30

IC/IB=5

TC=25C

25C100C


Basetoemittersaturationvoltage

VBE(sat)

(V)

0.01 0.1 1 100.03 0.3 31

1000

100

10

3

30

300

VCE=5V

25C

TC=100C

25C


Forw

ardcurrenttransferratio

hFE

1 3 10 30 1001

1000

100

10

3

30

300

IE=0

f=1MHzTC=25C

Collector to base voltage VCB (V)

Collecto

routputcapacitance

Cob

(pF)

0.01 0.03 0.1 0.3 10.1

100

10

1

0.3

3

30

VCE=10Vf=1MHz

TC=25C


Transitionfrequency

fT

(MHz)

0 2.00.5 1.51.00.01

0.03

0.1

0.3

1

3

10

30

100

tstg

tf

ton

Pulsed tw=1ms

Duty cycle=1%IC/IB=3.5

(2IB1=IB2)VCC=200V

TC=25C


Switchingtime

ton,tstg,tf

(s)

1 10 100 10003 30 3000.001

0.003

0.01

0.03

0.1

0.3

1

3

10Non repetitive pulseTC=25C

10ms

DC

1ms

t=0.5ms

Collector to emitter voltage VCE (V)

Collectorcurrent

IC

(A)

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Power Transistors 2SC5127/2SC5127A

Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit

Rth(t) t

104 10103 101102 1 103102 1040.1

1

10

100

10000

1000

Note: Rth was measured at Ta=25C and under natural convection.

(1) PT=10V 0.2A (2W) and without heat sink(2) PT=10V 1.0A (10W) and with a 100 100 2mm Al heat sink

(1)

(2)

Time t (s)

Thermalresistance

Rth(t)(C/W)

0 800200 600400 700100 5003000

4.0

3.0

1.0

2.5

3.5

2.0

0.5

1.5

Lcoil=180HIC/IB=5

(IB1=IB2)TC

Documents

2SC5127