2SJ539-E

Embed Size (px)

Citation preview

  • 7/28/2019 2SJ539-E

    1/8

    Rev.3.00 Sep 07, 2005 page 1 of 7

    2SJ539Silicon P Channel MOS FET

    REJ03G0886-0300(Previous: ADE-208-657A)

    Rev.3.00Sep 07, 2005

    DescriptionHigh speed power switching

    Features Low on-resistance

    R DS (on) = 0.16 typ. Low drive current

    4 V gate drive devices High speed switching

    Outline

    RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)

    D

    G

    S

    1. Gate2. Drain (Flange)3. Source

    12

    3

  • 7/28/2019 2SJ539-E

    2/8

    2SJ539

    Rev.3.00 Sep 07, 2005 page 2 of 7

    Absolute Maximum Ratings(Ta = 25 C)

    Item Symbol Value UnitDrain to source voltage V DSS 60 VGate to source voltage V GSS 20 VDrain current I D 10 A

    Drain peak current I D (pulse) Note 1 40 ABody to drain diode reverse drain current I DR 10 A

    Avalanche current I AP Note 3 10 A Avalanche energy E AR Note 3 8.5 mJChannel dissipation Pch Note 2 40 WChannel temperature Tch 150 CStorage temperature Tstg 55 to +150 CNotes: 1. PW 10 s, duty cycle 1%

    2. Value at Tc = 25 C3. Value at Tch = 25 C, Rg 50

    Electrical Characteristics(Ta = 25 C)

    Item Symbol Min Typ Max Unit Test ConditionsDrain to source breakdown voltage V (BR) DSS 60 V I D = 10 mA, V GS = 0Gate to source breakdown voltage V (BR) GSS 20 V I G = 100 A, V DS = 0Zero gate voltage drain current I DSS 10 A V DS = 60 V, V GS = 0Gate to source leak current I GSS 10 A V GS = 16 V, V DS = 0Gate to source cutoff voltage V GS (off) 1.0 2.0 V I D = 1 mA, V DS = 10 V

    RDS (on) 0.16 0.21 ID = 5 A, V GS = 10 VNote 4 Static drain to source on state resistance

    RDS (on) 0.23 0.36 ID = 5 A, V GS = 4 VNote 4

    Forward transfer admittance |y fs | 3.5 5.5 S I D = 5 A, V DS = 10 VNote 4

    Input capacitance Ciss 400 pFOutput capacitance Coss 220 pFReverse transfer capacitance Crss 75 pF

    VDS = 10 VVGS = 0f = 1 MHz

    Turn-on delay time t d (on) 10 nsRise time t r 45 nsTurn-off delay time t d (off) 65 nsFall time t f 50 ns

    VGS = 10 VID = 5 ARL = 6

    Body to drain diode forward voltage V DF 1.2 V I F = 10 A, V GS = 0Body to drain diode reverse recovery time t rr 70 ns I F = 10 A, V GS = 0

    diF/dt = 50 A/ s

    Note: 4. Pulse test

  • 7/28/2019 2SJ539-E

    3/8

    2SJ539

    Rev.3.00 Sep 07, 2005 page 3 of 7

    Main Characteristics

    C h a n n e l

    D i s s i p a

    t i o n

    P c h

    ( W )

    Case Temperature Tc (C)

    Power vs. Temperature Derating

    Drain to Source Voltage V DS (V)

    D r a

    i n C u r r e n t

    I D ( A )

    Typical Output Characteristics

    Gate to Source Voltage V GS (V)

    D r a

    i n C u r r e n t

    I D ( A )

    Typical Transfer Characteristics

    10

    0

    2

    4

    6

    8

    0 2 4 6 8 10

    10

    0

    2

    4

    6

    8

    0 1 2 3 4 5

    Tc = 75C

    80

    0

    20

    40

    60

    0 50 100 150 200

    VDS = 10 VPulse Test

    10 V

    5 V 6 V

    4 V 3.5 V

    3 V

    VGS = 2.5 V

    Pulse Test

    Drain to Source Voltage V DS (V)

    D r a

    i n C u r r e n t

    I D ( A )

    Maximum Safe Operation Area

    20

    2

    5

    50

    10

    1

    0.2

    0.5

    0.1 0.1 0.3 1 3 10 30 100

    100

    Ta = 25C

    P W = 1 0 m s ( 1 s h o t )

    D C O p e r a t i o n ( T c = 2 5 C )

    1 m s

    10 s

    1 0 0 s

    Operation inthis area islimited by R DS (on)

    Gate to Source Voltage V GS (V) D r a

    i n t o S o u r c e

    S a t u r a t

    i o n

    V o l

    t a g e

    V D S ( o n )

    ( V )

    Drain to Source Saturation Voltage vs.Gate to Source Voltage

    2.0

    0

    0.4

    0.8

    1.2

    1.6

    0 4 8 12 16 20

    Pulse Test

    ID = 5 A

    2 A 1 A

    Drain Current I D (A)

    S t a t i c D r a

    i n t o S o u r c e o n

    S t a t e R e s

    i s t a n c e

    R D S ( o n )

    ( )

    Static Drain to Source on State Resistancevs. Drain Current

    0.2

    0.1

    0.02

    0.05

    0.01 0.3 10 30 0.1 3 1 100

    1

    0.5

    VGS = 4 V

    10 V

    Pulse Test

    25C

    25C

  • 7/28/2019 2SJ539-E

    4/8

  • 7/28/2019 2SJ539-E

    5/8

    2SJ539

    Rev.3.00 Sep 07, 2005 page 5 of 7

    Source to Drain Voltage V SD (V)

    R e v e r s e

    D r a

    i n C u r r e n

    t I D

    R

    ( A )

    Reverse Drain Current vs.Source to Drain Voltage

    10

    25 50 75 100 125 1500

    2

    4

    6

    8

    Channel Temperature Tch (C)

    R e p e

    t i t i v e

    A v a

    l a n c h e

    E n e r g y

    E A R

    ( m J )

    Maximum Avalanche Energy vs.Channel Temperature Derating

    I AP = 10 AVDD = 25 Vduty < 0.1 %Rg 50

    10

    0

    2

    4

    6

    8

    0 0.4 0.8 1.2 1.6 2.0

    Pulse Test

    5 VVGS = 0, 5 V

    10 V

    Avalanche Test Circuit Avalanche Waveform

    0

    ID

    VDS

    I AP

    V(BR)DSS

    VDD

    E AR = L I AP2

    2

    1 VDSS

    VDSS V DD

    D.U.TRg

    I APMonitor

    VDSMonitor

    VDD

    50 Vin 15 V

    L

    Pulse Width PW (S)

    Normalized Transient Thermal Impedance vs. Pulse Width

    N o r m a

    l i z e

    d T r a n s i e n

    t T h e r m a

    l I m p e

    d a n c e

    s ( t )

    3

    1

    0.3

    0.1

    0.03

    0.0110 100 1 m 10 m 100 m 1 10

    Tc = 25CD = 1

    0.5

    0 . 2

    0 .1

    0 . 0 5

    0 . 0 2

    0. 0 1

    1 s h o t p

    u l s e

    P DM

    PWT

    D = PWT

    ch c (t) = s (t) ch c

    ch c = 3.12C/W, Tc = 25C

  • 7/28/2019 2SJ539-E

    6/8

    2SJ539

    Rev.3.00 Sep 07, 2005 page 6 of 7

    tr td(on)

    Vin

    90% 90%

    10%

    10%Vout

    td(off)

    90%

    10%

    tf

    Switching Time Test Circuit Waveform

    Vin Monitor

    D.U.T.

    Vin 10 V

    RL

    VoutMonitor

    50 VDD= 30 V

  • 7/28/2019 2SJ539-E

    7/8

    2SJ539

    Rev.3.00 Sep 07, 2005 page 7 of 7

    Package Dimensions

    0.5 0.12.54 0.5

    0.76 0.1 1 4 . 0

    0

    . 5

    1 5

    . 0 0

    . 3

    2 . 7

    9

    0 . 2

    1 8

    . 5 0

    . 5

    7 . 8

    0 . 5

    10.16 0.2

    2.54 0.5

    1.26 0.15

    4.44 0.2

    2.7 Max

    1.5 Max

    11.5 Max

    9.58.0

    1 . 2

    7 6 . 4

    + 0

    . 2

    0

    . 1

    3.6 +0.10.08

    Package Name

    PRSS0004AC-A TO-220AB / TO-220ABV

    MASS[Typ.]

    1.8gSC-46

    RENESAS CodeJEITA Package Code Unit: mm

    Ordering Information

    Part Name Quantity Shipping Container 2SJ539-E 500 pcs Box (Sack)Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of

    production before ordering the product.

  • 7/28/2019 2SJ539-E

    8/8

    Keep safety first in your circuit designs!1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

    may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliarycircuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.

    Notes regarding these materials1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's

    application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,

    diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of

    publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It istherefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest productinformation before purchasing a product listed herein.The information described here may contain technical inaccuracies or typographical errors.Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from t hese inaccuracies or errors.Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductorhome page (http://www.renesas.com).

    4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure toevaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumesno responsibility for any damage, liability or other loss resulting from the information contained herein.

    5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human lifeis potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of aproduct contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeateruse.

    6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from t he Japanese government and

    cannot be imported into a country other than the approved destination.Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.

    8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.

    Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

    http://www.renesas.comRefer to " http://www.renesas.com/en/network " for the latest and detailed information.

    Renesas Technology America, Inc.450 Holger Way, San Jose, CA 95134-1368, U.S.ATel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe LimitedDukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.Tel: (1628) 585-100, Fax: (1628) 585-900 Renesas Technology Hong Kong Ltd.7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong KongTel: 2265-6688, Fax: 2730-6071 Renesas Technology Taiwan Co., Ltd.10th Floor, No.99, Fushing North Road, Taipei, TaiwanTel: (2) 2715-2888, Fax: (2) 2713-2999

    Renesas Technology (Shanghai) Co., Ltd.Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, ChinaTel: (21) 6472-1001, Fax: (21) 6415-2952

    Renesas Technology Singapore Pte. Ltd.1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632Tel: 6213-0200, Fax: 6278-8001

    Renesas Technology Korea Co., Ltd.Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, KoreaTel: 2-796-3115, Fax: 2-796-2145

    Renesas Technology Malaysia Sdn. Bhd.Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, MalaysiaTel: 7955-9390, Fax: 7955-9510

    RENESAS SALES OFFICES

    2005. Renesas Technology Corp., All rights reserved. Printed in Japan.

    Colophon .3.0