Product Description

1 EDS-101577 Rev D303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications aresubject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does notauthorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.

Sirenza Microdevices SHF-0186K is a high performanceAlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technologyimproves breakdown voltage while minimizing Schottky leakagecurrent resulting in higher PAE and improved linearity.Output power at 1dB compression for the SHF-0186K is +28dBm when biased for Class AB operation at 8V,100mA. The+40 dBm third order intercept makes it ideal for high dynamicrange, high intercept point requirements. It is well suited foruse in both analog and digital wireless communicationinfrastructure and subscriber equipment including 3G, cellular,PCS, fixed wireless, and pager systems.

SHF-0186K0.05-6 GHz, 0.5 WattGaAs HFET

Product Features +28 dBm Output Power at 1dB Compression +40 dBm OIP3 High Drain Efficiency 18 dB Gain at 900 MHz (Application Circuit) 15 dB Gain at 1960 MHz (Application Circuit) See App Note AN-020 for circuit details

Applications Analog and Digital Wireless Systems 3G, Cellular, PCS Fixed Wireless, Pager Systems

-10

0

10

20

30

40

0 2 4 6 8 10 12

Typical Gain Performance (8V,100mA)

Gai

n, G

max

(dB)

Frequency (GHz)

Gmax

Gain

lobmyS C52=T,scitsiretcarahCeciveDV SD I,V8= QD )detonesiwrehtosselnu(Am001=ycneuqerFtseT

detseT%001=]1[ stinU .niM .pyT .xaM

xamG niaGelbaliavAmumixaMZS Z= S Z,* L Z= L*zHM009=f

zHM0691=fBdBd

--

4.321.02

--

S 12niaGnoitresnI

ZS Z= L smhO05=zHM009=f

]1[zHM0091=fBdBd 0.41

0.810.51 0.61

G niaGrewoPZS Z= TPOS Z, L Z= TPOLzHM009=f

zHM0691=fmBdmBd

--

9.715.41

--

3PIO tnioPtpecretnIredrOdrihTtuptuOZS Z= TPOS Z, L Z= TPOL P, TUO enotrepmBd51+=zHM009=f

zHM0691=fmBdmBd

--

1404

--

Bd1P tnioPnoisserpmoCBd1tuptuOZS Z= TPOS Z, L Z= TPOLzHM009=f

zHM0691=fmBdmBd

--

8282

--

I SSDtnerruCniarDdetarutaS

V SD V= PSD V, SG V0=Am 402 492 483

gmecnatcudnocnarT

V SD V= PSD V, SG V52.0-=Sm 441 891 252

VPegatloVffO-hcniP

V SD I,V2= SD Am6.0=]1[ V 0.3- 9.1- 0.1-

VB SGegatloVnwodkaerBecruoS-ot-etaG

I SG neponiard,Am2.1=]1[ V - 71- 51-

VB DGegatloVnwodkaerBniarD-ot-etaG

I DG V,Am2.1= SG V5-=]1[ V - 22- 71-

htR dael-ot-noitcnuj,ecnatsiseRlamrehT o W/C - 66 -

V SD )ecruos-ot-niard(egatloVgnitarepO V - - 0.9

I SD )tnecseiuq,ecruos-ot-niard(tnerruCgnitarepO Am - - 002

TJ erutarepmeTnoitcnuJgnitarepOdednemmoceR C - - 051

Pending ObsolescenceLast Time Buy Date: March 15, 2004

2 EDS-101577 Rev D

SHF-0186K 0.5 Watt HFET

303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

PreliminaryPreliminaryPending Obsolescence

Absolute Maximum Ratings

Typical Performance - Engineering Application Circuits (See App Note AN-020)

Data above represents typical performance of the application circuits noted in Application Note AN-020.Refer to the application note for additional RF data, PCB layouts, and BOMs for each application circuit. Theapplication note also includes biasing instructions and other key issues to be considered. For the latestapplication notes please visit our site at www.sirenza.com or call your local sales representative.

S

G

D

ZSOPT

Z LOPT

Operation of this device beyond any one of theseparameters may cause permanent damage.

MTTF is inversely proportional to the device junctiontemperature. For junction temperature and MTTFconsiderations the device operating conditionsshould also satisfy the following experssions:

PDC - POUT < (TJ - TL) / RTH

where:PDC = IDS * VDS (W)POUT = RF Output Power (W)TJ = Junction Temperature (C)TL = Lead Temperature (pin 2,4) (C)RTH = Thermal Resistance (C/W)

[4] IS-95 CDMA Channel Power (9 Fwd Channels, 885kHz offset, 30kHz Adj Chan BW)[5] W-CDMA Channel Power (64 DPCH, 5MHz offset, 3.84MHz Adj Chan BW)[6] POUT= +13dBm per tone, 1MHz tone spacing

* POUT= +15dBm per tone, 1MHz tone spacing

qerF)zHM(

V SD)V(

I QD)Am(

Bd1P)mBd(

*3PIO)mBd(

niaG)Bd(

11S)Bd(

22S)Bd(

FN)Bd(

Z TPOS( )

Z TPOL( )

009 8 001 1.82 5.04 4.81 61- 9- 1.3 5.15j+37 6.2j+3.050691 8 001 8.82 04 7.41 61- 5- 5.2 0.23j+9.42 5.2j-4.630412 8 001 7.82 5.83 4.41 21- 7- 0.3 7.42j+4.12 3.2j+9.430542 8 001 6.82 5.93 9.31 51- 5- 9.2 6.12j+0.51 5.5j-8.44

retemaraP lobmyS eulaV tinU

niarD tnerruC I SD I SSD Am

etaGdrawroF tnerruC I FSG 2.1 Am

tnerruCetaGesreveR I RSG 2.1 Am

ecruoS-ot-niarD egatloV V SD 21+ V

ecruoS-ot-etaG egatloV V SG 0>ro5-< V

rewoPtupnIFR P NI 002 Wm

erutarepmeTgnitarepO T PO 58+ot04- C

egnaRerutarepmeTegarotS T rots 1+ot04- 57 C

noitapissiDrewoP P SID S 5.3 W

erutarepmeTlennahC TJ + 571 C

esuacyamstimilesehtfoenoynadnoyebecivedsihtfonoitarepOecivedeht,noitareposuounitnocelbailerroF.egamadtnenamrep

seulavgnitarepomumixamehtdeecxetontsumtnerrucdnaegatlov.1egapnoelbatehtnideificeps

3 EDS-101577 Rev D

SHF-0186K 0.5 Watt HFET

303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

PreliminaryPreliminaryPending Obsolescence

-10

0

10

20

30

40

0 2 4 6 8 10 12-50

-40

-30

-20

-10

0

-10-505

10152025

0 2 4 6 8 10

De-embedded S-Parameters (ZS=ZL=50 Ohms, VDS=8V, IDS=100mA, 25 C)

Frequency (GHz)

Gai

n, G

max

(dB) Isolation (dB)Gain

Gmax

Isolation

Gai

n (d

B)

Frequency (GHz)

T = -40, 25, 85C

Gain & Isolation Gain vs Temperature

S22 vs Frequency

0.0 0.2 0.5 1.0 2.0

0.2

0.5

1.0

2.0

5.0

inf

0.2

0.5

1.0

2.0

5.0

5.0

10 GHz

6 GHz

3 GHz

2 GHz 1 GHz

13 GHz

S11 vs Frequency

0.0 0.2 0.5 1.0 2.0 5.0

0.2

0.5

1.0

2.0

5.0

inf

0.2

0.5

1.0

2.0

5.0

10 GHz

6 GHz

3 GHz

2 GHz

1 GHz

13 GHz

00.05

0.1

0.150.2

0.250.3

0.35

0 1 2 3 4 5 6 7 8

Note: S-parameters are de-embedded to the device leads with ZS=ZL=50. The data represents typical performace of the device.De-embedded s-parameters can be downloaded from our website (www.sirenza.com).

VGS = -2.0 to 0V, 0.2V stepsT=25 C

DC-IV Curves

VDS (V)

I DS (

A)

4 EDS-101577 Rev D

SHF-0186K 0.5 Watt HFET

303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

PreliminaryPreliminaryPending Obsolescence

Part Number Ordering InformationrebmuNtraP eziSleeR leeR/seciveD

K6810-FHS "7 0001

Caution: ESD sensitiveAppropriate precautions in handling, packaging andtesting devices must be observed.

Package Dimensions

PCB Pad Layout

H1

H1

#niP noitcnuF noitpircseD1 etaG tupnIFR

2 ecruoS daelecuderotselohaivesU.dnuorgotnoitcennoC.elbissopsasdaeldnuorgotesolcsasaivecalP.ecnatcudni

3 niarD tuptuOFR

4 ecruoS 2niPsaemaS

The part will be symbolized with the H1designator and a dot signifying pin 1 on the topsurface of the package.

Part Symbolization