5
©2002 Fairchild Semiconductor Corporation Rev. A3, May 2002  S  S  9   0  1   3  NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a =25°C unless otherwise noted Electrical Characteristics T a =25°C unless otherwise noted h FE Classification  Symbol Parameter Ratings Units V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 20 V V EBO Emitter-Base Voltage 5 V I C Collector Current 500 mA P C Collector Power Dissipation 625 mW T J Junction T emperature 150 °C T STG Storage T emperature -55 ~ 150 °C Symbol Parameter Test Condition Min. T yp. Max. Units BV CBO Co ll ec tor -B as e B re ak do wn Vo l ta ge I C =100µ  A, I E =0 40 V BV CEO Coll ector -Emit ter Br eakdown Vol tage I C =1mA, I B =0 20 V BV EBO Emitter-Base Breakdown Voltage I E =100µ  A, I C =0 5 V I CBO Collector Cut-off Current V CB =25V, I E =0 100 nA I EBO Emitter Cut-off Current V EB =3V, I C =0 100 nA h FE1 h FE2 DC Current Gain V CE =1V, I C =50mA V CE =1V, I C =500mA 64 40 120 120 202 V CE (sat) Co llecto r-Emitter Satu ration Voltage I C =500mA, I B =50mA 0.16 0.6 V V BE (sat) Base-Emitter S aturation Voltage I C =500mA, I B =50mA 0.91 1.2 V V BE (on) Base-Emitter On Voltage V CE =1V, I C =10mA 0.6 0.67 0.7 V Classification D E F G H h FE1 64 ~ 91 78 ~ 1 12 96 ~ 135 112 ~ 166 144 ~ 202 1. Emitter 2. Base 3. Collector SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High tot al power di ssip ati on. (P T =625mW) High Collector Curr ent . (I C =500mA) Comple mentary to SS9012 Exce ll en t h FE linearity. TO-92 1

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©2002 Fairchild Semiconductor Corporation Rev. A3, May 2002

 S  S  9   0  1   3  

NPN Epitaxial Silicon Transistor 

Absolute Maximum Ratings Ta=25°C unless otherwise noted 

Electrical Characteristics Ta=25°C unless otherwise noted 

hFE Classification

 

Symbol Parameter Ratings Units

VCBO Collector-Base Voltage 40 V

VCEO Collector-Emitter Voltage 20 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current 500 mA

PC Collector Power Dissipation 625 mW

TJ Junction Temperature 150 °C

TSTG Storage Temperature -55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BVCBO Collector-Base Breakdown Voltage IC =100µ A, IE =0 40 VBVCEO Collector-Emitter Breakdown Voltage IC =1mA, IB =0 20 V

BVEBO Emitter-Base Breakdown Voltage IE =100µ A, IC =0 5 V

ICBO Collector Cut-off Current VCB =25V, IE =0 100 nA

IEBO Emitter Cut-off Current VEB =3V, IC =0 100 nA

hFE1

hFE2

DC Current Gain VCE =1V, IC =50mA

VCE =1V, IC =500mA

64

40

120

120

202

VCE (sat) Collector-Emitter Saturat ion Voltage IC =500mA, IB =50mA 0.16 0.6 V

VBE (sat) Base-Emitter S aturation Voltage IC =500mA, IB =50mA 0.91 1.2 V

VBE (on) Base-Emitter On Voltage VCE =1V, IC =10mA 0.6 0.67 0.7 V

Classification D E F G H

hFE1 64 ~ 91 78 ~ 112 96 ~ 135 112 ~ 166 144 ~ 202

1. Emitter 2. Base 3. Collector 

SS9013

1W Output Amplifier of Potable Radios inClass B Push-pull Operation.• High total power dissipation. (PT=625mW)

• High Collector Current. (IC=500mA)

• Complementary to SS9012

• Excellent hFE linearity.

TO-921

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©2002 Fairchild Semiconductor Corporation

 S  S  9   0  1   3  

Rev. A3, May 2002

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Current Gain Bandwidth Product

0 10 20 30 40 500

2

4

6

8

10

12

14

16

18

20

IB

= 160µ AIB

= 140µ A

IB = 120µ A

IB

= 100µ A

IB

= 80µ A

IB

= 60µ A

IB

= 40µ A

IB

= 20µ A   I   C   [  m   A   ] ,   C   O   L   L   E   C   T   O   R   C   U   R   R   E   N   T

VCE

[V], COLLECTOR-EMITTER VOLTAGE

1 10 100 1000 100001

10

100

1000

VCE = 1V

 

   h   F   E ,

   D   C   C   U   R   R   E   N   T   G   A   I   N

IC [mA], COLLECTOR CURRENT

1 10 100 1000 10000

10

100

1000

10000

IC

= 10 IB

VBE

(sat)

VCE

(sat)

   V   B   E

   (  s  a   t   ) ,   V

   C   E

   (  s  a   t   )   [  m   V   ] ,   S   A   T   U   R   A   T   I   O   N   V   O   L   T   A   G   E

IC

[mA], COLLECTOR CURRENT

1 10 100 1000 100001

10

100

1000

VCE = 6V

   f   T   [   M   H  z   ] ,   C   U   R   R   E   N   T   G   A   I   N   B   A   N   D   W   I   D   T   H   P   R   O   D   U   C   T

IC [mA], COLLECTOR CURRENT

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0.46 ±0.10

1.27TYP

(R2.29)

   3 .   8

   6   M   A   X

[1.27 ±0.20]

1.27TYP

[1.27 ±0.20]

3.60 ±0.20

   1   4 .   4

   7        ±   0 .   4

   0

   1 .   0

   2        ±   0 .   1

   0   (   0 .   2

   5   )

   4 .   5

   8        ±   0 .   2

   0

4.58+0.25 –0.15

0.38+0.10 –0.05

   0 .   3

   8  +   0 .   1

   0

  –   0 .   0

   5

TO-92

Package Demensions

 S  S  9   0  1   3  

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A3, May 2002

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DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

 As used herein:

©2002 Fairchild Semiconductor Corporation Rev. H5

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

 Advance Information Formative or In

Design

This datasheet contains the design specifications for 

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

STAR*POWER is used under license

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