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2003 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev.1.0.3
Features
Precision Fixed Operating Frequency (70kHz)
Low Start-up Current(Typ. 100uA)
Pulse by Pulse Current Limiting
Over Load Protection
Over Current Protection
Over Voltage Protection (Min. 25V)
Internal Thermal Shutdown Function
Under Voltage Lockout Internal High Voltage Sense FET
Latch Mode
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM IC.
Included PWM controller features integrated fixed
frequency oscillator, under voltage lock-out, leading edge
blanking, optimized gate turn-on/turn-off driver, thermal
shutdown protection, over voltage protection, andtemperature compensated precision current sources for
loop compensation and fault protection circuitry. compared
to discrete MOSFET and PWM controller or RCC solution, a
Fairchild Power Switch(FPS) can reduce total component
count, design size, weight and at the same time increase
efficiency, productivity, and system reliability. It has a basic
platform well suited for cost effective design in either a
flyback converter or a forward converter.
TO-3P-5L
1. DRAIN 2. GND 3. VCC 4. FB 5. S/S
1
Internal Block Diagram
VO F F S E T
Sense
FET
15V/9V
UVLO
Vref
2.5R
5uA
R
1mA
Good Logic
INTERNALBIAS
LEB++++
-
S
R
Q
OSC
CLK
7.5V
ShutdownLatch
Power-on Reset/Auto-restart
Rsense
LEB : Leading Edge Blanking OCL : Over Current L im it
Vcc
GND
Drain
++++
-
14V
27V
++++
-
OVP-out
OVP
S
RQ
3
2
1
VCC VREF
VOLTAGELIMIT
CIRCUIT
OLP
OCL(VS=1.4V)
TSD(TJ=150)
OVP-out(VCC=27V)
VS
5V
Soft Start 5
Feedback 4
KA5M0965QFairchild Power Switch(FPS)
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Absolute Maximum Ratings
Note:
1. Tj = 25C to 150C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L = 20mH, VDD = 50V, RG = 27, starting Tj = 25C
Characteristic Symbol Value Unit
Drain-Gate Voltage (RGS=1M) VDGR 650 V
Gate-Source (GND) Voltage VGS 30 V
Drain Current Pulsed (2) IDM 36.0 ADC
Single Pulsed Avalanche Energy (3) EAS 950 mJ
Continuous Drain Current (TC=25C) ID 9.0 ADC
Continuous Drain Current (TC=100C) ID 5.8 ADC
Maximum Supply Voltage VCC,MAX 30 V
Input Voltage Range VFB -0.3 to VSD V
Total Power DissipationPD (watt H/S) 170 W
Darting 1.33 W/C
Operating Ambient Temperature TA -25 to +85 C
Storage Temperature TSTG -55 to +150 C
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Electrical Characteristics (SFET Part)
(Ta =25C unless otherwise specified)
Note:
1. Pulse test: Pulse width 300S, duty 2%
2.
Characteristic Symbol Test condition Min. Typ. Max. Unit
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50A 650 - - V
Zero Gate Voltage Drain Current IDSS
VDS=Max., Rating,
VGS=0V- - 50 A
VDS=0.8Max., Rating,
VGS=0V, TC=125C- - 200 mA
Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=4.5A - 0.96 1.2 W
Forward Transconductance (Note) gfs VDS=50V, ID=4.5A 5.0 - - S
Input Capacitance CissVGS=0V, VDS=25V,
f=1MHz
- 1200 -
pFOutput Capacitance Coss - 135 -
Reverse Transfer Capacitance Crss - 25 -
Turn on Delay Time td(on) VDD=0.5BVDSS, ID=9.0A
(MOSFET switchingtime are essentially
independent of
operating temperature)
- 25 60
nSRise Time tr - 75 160Turn Off Delay Time td(off) - 130 270
Fall Time tf - 70 150
Total Gate Charge
(Gate-Source+Gate-Drain)Qg
VGS=10V, ID=9.0A,
VDS=0.8BVDSS
- 45 60
nCGate-Source Charge Qgs - 8 -
Gate-Drain (Miller) Charge Qgd - 22 -
S1
R----=
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Electrical Characteristics (Control Part) (Continued)
(Ta = 25C unless otherwise specified)
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS(water test) process
3. These parameters are indicated Inductor current.
Characteristic Symbol Test condition Min. Typ. Max. Unit
UVLO SECTION
Start Threshold Voltage VSTART - 14 15 16 V
Stop Threshold Voltage VSTOP After turn on 8.4 9 9.6 V
OSCILLATOR SECTION
Initial Accuracy FOSC Ta=25C 61 67 73 kHz
Frequency Change With Temperature (2) - -25C Ta +85C - 5 10 %
Maximum Duty Cycle Dmax - 74 77 80 %
FEEDBACK SECTION
Feedback Source Current IFB Ta=25C, 0V Vfb 3V 0.7 0.9 1.1 mA
Shutdown Feedback Voltage VSD Vfb 6.5V 6.9 7.5 8.1 V
Shutdown Delay Current Idelay Ta=25C, 5V Vfb VSD 4 5 6 A
SOFT START SECTIONSoft Start Voltage VSS VFB = 2V 4.7 5.0 5.3 V
Soft Start Current ISS Sync & S/S=GND 0.8 1.0 1.2 mA
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit IOVER Max. inductor current 5.28 6.00 6.72 A
PROTECTION SECTION
Thermal Shutdown Temperature (Tj) (1) TSD - 140 160 - C
Over Voltage Protection Voltage VOVP VCC 24V 25 27 29 V
TOTAL DEVICE SECTION
Start-up Current ISTART VCC=14V - 0.1 0.17 mA
Operating Supply Current (Control Part Only) IOP VCC 28 - 7 12 mA
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Typical Performance Characteristics
Figure 1. Output Characteristics Figure 2. Thansfer Characteristics
Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage
Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage
10-1
100
101
10-1
100
101
Note :
1. 250s Pulse Test
2. TC
= 25
VGS
Top : 15 V10 V
8.0 V
7.5 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
ID,DrainCurrent[A]
VDS
, Drain-Source Voltage [V]
2 4 6 8 1010
-1
100
101
Note
1. VDS
= 50V
2. 250s Pulse Test
-55
150
25
ID,DrainCurrent[A]
VGS
, Gate-Source Voltage [V]
0 2 4 6 8 10 12 14 160.8
0.9
1.0
1.1
1.2
1.3
VGS
= 20V
VGS
= 10V
RDS(on),[]
Drain-SourceOn-Resistance
ID
, Drain Current [A]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.610-1
100
101
25150 Note :1. V
GS= 0V
2. 250s Pulse Test
IDR
,ReverseDrainCurrent[A]
VSD
, Source-Drain Voltage [V]
10-1
100
101
0
500
1000
1500
2000
2500
3000C
iss= C
gs+ C
gd(C
ds= shorted)
Coss
= Cds
+ Cgd
Crss
= Cgd
Note ;
1. VGS
= 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Cap
acitances[pF]
VDS
, Drain-Source Voltage [V]
0 5 10 15 20 25 30 35 40 450
2
4
6
8
10
12
VDS
= 300V
VDS
= 120V
VDS
= 480V
Note : ID
= 8.5 A
VGS,Gate-SourceVoltage[V]
QG, Total Gate Charge [nC]
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature
Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature
Figure 11. Thermal Response
-100 -50 0 50 100 150 2000.8
0.9
1.0
1.1
1.2
Note :
1. VGS
= 0 V
2. ID
= 250 A
BVDSS,(Normalized)
Drain-SourceBreakdownVoltage
TJ, Junction Temperature [
oC]
-100 -50 0 50 100 150 2000.0
0.5
1.0
1.5
2.0
2.5
3.0
Note :
1. VGS
= 10 V
2. ID
= 6.0 A
RDS(ON),(Normalized)
Drain-SourceOn-Resistance
TJ, Junction Temperature [
oC]
100
101
102
103
10-1
100
101
102
10 s
DC
10 ms
1 ms
100 s
Operation in This Area
is Limited by RDS(on)
Notes :
1. TC
= 25oC
2. TJ= 150
oC
3. Single Pulse
ID,DrainCurrent[A]
VDS
, Drain-Source Voltage [V]
25 50 75 100 125 1500
2
4
6
8
10
ID,DrainCurrent[A]
TC, Case Temperature [ ]
1 0-5
1 0-4
1 0-3
1 0-2
1 0-1
1 00
1 01
1 0-2
1 0-1
1 00
N o t e s :
1 . Z JC
( t) = 0 . 7 5 / W M a x .
2 . D u t y F a c t o r , D = t1/t
2
3 . TJM
- TC
= PD M
* Z JC
(t )
s i n g l e p u l s e
D = 0 . 5
0 . 0 2
0 .2
0 . 0 5
0 .1
0 . 0 1
Z
JC(t),The
rmalResponse
t1, S q u a r e W a v e P u ls e D u r a tio n [ s e c ]
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Typical Performance Characteristics (Control part) (Continued)
(These characteristic graphs are normalized at Ta = 25C)
Fig.1 Operating Frequency
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Fosc
Fig.2 Feedback Source Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Ifb
Fig.3 Operating Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Iop
Fig.4 Max Inductor Current
0.8
0.85
0.9
0.95
1
1.05
1.1
-25 0 25 50 75 100 125 150
Ipeak
Fig.5 Start up Current
0.5
0.7
0.9
1.1
1.3
1.5
-25 0 25 50 75 100 125 150
Istart
Fig.6 Start Threshold Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vstart
Figure 1. Operating Frequency Figure 2. Feedback Source Current
Figure 3. Operating Supply Current Figure 4. Peak Current Limit
Figure 5. Start up Current Figure 6. Start Threshold Voltage
Iover
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Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta = 25C)
Fig.7 Stop Threshold Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vstop
Fig.8 Maximum Duty Cycle
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Dmax
Fig.9 Vcc Zener Voltage
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Vz
Fig.10 Shutdown Feedback Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vsd
Fig.11 Shutdown Delay Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Idelay
Fig.12 Over Voltage Protection
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vovp
Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle
Figure 9. VCC Zener Voltage Figure 10. Shutdown Feedback Voltage
Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection
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Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta = 25C)
Figure13. Soft Start Voltage Figure 14. Static Drain-Source on Resistance
Fig.13 Soft Start Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vss
Fig.14 Drain Source Turn-on
Resistance
0
0.5
1
1.5
2
2.5
-25 0 25 50 75 100 125 150
Rdson
( )
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Package Dimensions
TO-3P-5L
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Package Dimensions (Continued)
TO-3P-5L (Forming)
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8/25/03 0.0m 001Stock#DSxxxxxxxx
2003 Fairchild Semiconductor Corporation
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICESOR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTORCORPORATION. As used herein:
1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure toperform when properly used in accordance withinstructions for use provided in the labeling, can bereasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHERDOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
Ordering Information
TU : Non Forming Type
YDTU : Forming Type
Product Number Package Rating Operating Temperature
KA5M0965QTU TO-3P-5L650V, 9A -25C to +85C
KA5M0965QYDTU TO-3P-5L(Forming)