70L02GH

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Advanced Power N-CHANNEL ENHANCEMENT MODE

Electronics Corp. POWER MOSFET

Low On-resistance BVDSS 25V Simple Drive Requirement RDS(ON) 9m Fast Switching ID 66A

Description

Absolute Maximum Ratings

Symbol UnitsVDS V

VGS V

ID@TC=25 A

ID@TC=100 A

IDM A

PD@TC=25 W

W/

TSTG

TJ

Symbol Value Unit

Rthj-case Thermal Resistance Junction-case Max. 1.9 /W

Rthj-amb Thermal Resistance Junction-ambient Max. 62 /W

Data & specifications subject to change without notice 200831073-1/6

Thermal DataParameter

Pulsed Drain Current1 210

Operating Junction Temperature Range -55 to 150

Linear Derating Factor 0.53

Storage Temperature Range

Total Power Dissipation 66

-55 to 150

Continuous Drain Current, VGS @ 10V 66

Continuous Drain Current, VGS @ 10V 42

Drain-Source Voltage 25

Gate-Source Voltage 20

AP70L02GS/P

Parameter Rating

RoHS-compliant Product

G

D

S

G DS TO-263(S)

GD

STO-220(P)

The Advanced Power MOSFETs from APEC provide the designer

with the best combination of fast switching, ruggedized device

design, low on-resistance and cost-effectiveness.

The TO-263 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters. The through-hole version

(AP70L02GP) is available for low-profile applications.

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Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 25 - - V

BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.037 - V/

RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=33A - - 9 m

VGS=4.5V, ID=20A - - 18 m

VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V

gfs Forward Transconductance VDS=10V, ID=33A - 25 - S

IDSS Drain-Source Leakage Current (Tj=25oC) VDS=25V, VGS=0V - - 1 uA

Drain-Source Leakage Current (Tj=150

o

C) VDS=20V, VGS=0V - - 25 uAIGSS Gate-Source Leakage VGS= 20V - - 100 nA

Qg Total Gate Charge2 ID=33A - 23 nC

Qgs Gate-Source Charge VDS=20V - 3 nC

Qgd Gate-Drain ("Miller") Charge VGS=5V - 17 nC

td(on) Turn-on Delay Time2

VDS=15V - 8.8 - ns

tr Rise Time ID=33A - 95 - ns

td(off) Turn-off Delay Time RG=3.3,VGS=10V - 24 - ns

tf Fall Time RD=0.45 - 14 - ns

Ciss Input Capacitance VGS=0V - 790 - pFCoss Output Capacitance VDS=25V - 475 - pF

Crss Reverse Transfer Capacitance f=1.0MHz - 195 - pF

Source-Drain DiodeSymbol Parameter Test Conditions Min. Typ. Max. Units

IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.26V - - 66 A

ISM Pulsed Source Current ( Body Diode )1 - - 210 A

VSD Forward On Voltage2 Tj=25, IS=66A, VGS=0V - - 1.26 V

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.

DEVICE OR SYSTEM ARE NOT AUTHORIZED.

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THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

AP70L02GS/P

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AP70L02GS/P

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature

3/6

0

20

40

60

80

100

120

140

0 1 2 3 4 5 6

VDS , Drain-to-Source Voltage (V)

ID,DrainCurrent(A)

TC=150o

C

VG =4.0V

VG =6.0V

VG =8.0V

VG =10V

VG =5.0V

0.6

0.8

1

1.2

1.4

1.6

1.8

-50 0 50 100 150

Tj , Junction Temperature (o

C)

Norm

alizedRDS(ON)

VG =10V

ID =10A

5

7

9

11

13

15

17

19

21

23

2 3 4 5 6 7 8 9 10 11

VGS (V)

RDS(ON)

(m

)

ID =10A

Tc =25

0

50

100

150

200

250

0 1 2 3 4 5 6

VDS , Drain-to-Source Voltage (V)

ID,DrainCurrent(A)

TC=25o

C

VG =4.0V

VG =5.0V

VG =6.0V

VG =8.0V

VG =10V

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AP70L02GS/P

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation

Case Temperature

Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance

4/6

0

10

20

30

40

50

60

70

80

25 50 75 100 125 150

Tc, Case Temperature (o

C)

ID,DrainCurrent(A)

0

10

20

30

40

50

60

70

80

0 50 100 150

Tc ,Case Temperature (o

C)

PD

(W)

1

10

100

1000

1 10 100

VDS (V)

ID(A)

Tc =25o

C

Single Pulse

100us

1ms

10ms

100ms

10us

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

t , Pulse Width (s)

NormalizedThe

rmalResponse(Rthjc

)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

t

T

0.02

0.01

0.05

0.1

0.2

DUTY=0.5

SINGLE PULSE

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AP70L02GS/P

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics

Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

5/6

0

1

2

3

-50 0 50 100 150

Tj , Junction Temperature(o

C)

VGS(th)

(V)

0.1

1

10

100

0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5

VSD (V)

IS(A) Tj =25

oCTj =150

oC

0

2

4

6

8

10

12

14

16

0 5 10 15 20 25 30 35 40 45 50

Q G , Total Gate Charge (nC)

VGS,

GatetoSourceVoltage(V)

ID =33A

VDS =20V

100

1000

10000

1 6 11 16 21 26 31

VDS (V)

C(pF)

=1.0MHz

Ciss

Coss

Crss

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AP70L02GS/P

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform

Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform

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td(on) tr td(off) tf

VDS

VGS

10%

90%

Q

VG

5V

QGS QGD

QG

Charge

0.6 x RATED VDS

TO THE

OSCILLOSCOPE

-

+

10V

D

G

S

VDS

VGS

RG

RD

0.8 x RATED VDS

TO THE

OSCILLOSCOPE

-

+

D

G

S

VDS

VGS

ID

IG

1~ 3 mA

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Package Outline : TO-263

Millimeters

MIN NOM MAX

A 4.25 4.75 5.20

A1 0.00 0.15 0.30

A2 2.20 2.45 2.70

b 0.70 0.90 1.10

b1 1.07 1.27 1.47

c 0.30 0.45 0.60

c1 1.15 1.30 1.45

D 8.30 8.90 9.40

E 9.70 10.10 10.50e 2.04 2.54 3.04

L2 ----- 1.50 -----

L3 4.50 4.90 5.30

L4 ----- 1.50 ----

1.All Dimensions Are in Millimeters.

2.Dimension Does Not Include Mold Protrusions.

Part Marking Information & Packing : TO-263

SYMBOLS

ADVANCED POWER ELECTRONICS CORP.

Package Code

Part Number

E

b

b1

e

D

L2

L3

c1

A

A1

L4

c

XXXXXS

YWWSSS

A2

YLast Digit Of The Year

WWWeek

SSSSequence

Package Code

Part Number

70L02GS

YWWSSSLOGO

E

b

b1

e

D

L2

L3

c1

A

A1

L4

c

A2

Date Code (YWWSSS)


WWWeek

SSSSequence

meet Rohs requirement

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Package Outline : TO-220

Millimeters

MIN NOM MAX

A 4.25 4.48 4.70

b 0.65 0.80 0.90

b1 1.15 1.38 1.60

c 0.40 0.50 0.60

c1 1.00 1.20 1.40

E 9.70 10.00 10.40

E1 --- --- 11.50

e ---- 2.54 ----

L 12.70 13.60 14.50

L1 2.60 2.80 3.00

L2 1.00 1.40 1.80

L3 2.6 3.10 3.6

L4 14.70 15.50 16

L5 6.30 6.50 6.70

3.50 3.60 3.70

D 8.40 8.90 9.40

1.All Dimensions Are in Millimeters.

2.Dimension Does Not Include Mold Protrusions.

Part Marking Information & Packing : TO-220

SYMBOLS

ADVANCED POWER ELECTRONICS CORP.

E

b

b1

e

D

L3

L4

L1L2

A

c1

c

L

Package Code

Part Number

Date Code (YWWSSS)


WWWeek

SSSSe uence

70L02GP

YWWSSS

LOGO

L5

E1

meet Rohs requirement

Documents

70L02GH