7th Nitride Semiconductor Application Workshop 2010 ... · PDF fileRecent Activities of LED-Developments in Europe LED Technology enabling new Applications 7th Nitride Semiconductor

Recent Activities of LED-Developments in Europe

LED Technology enabling new Applications

7th Nitride Semiconductor Application Workshop 2010, Nagoya, JapanDr. Volker HärleVP R&D

Opto Semiconductors OSRAM

LEDs 2009 | 10.12.2009 | Page 2OS LED M C | Dr. Volker Härle| VP R&D

Overview

- Market & Applications

The lighting picture today: Back lighting / SSL applicat ions

- ThinGaN Chip technology -> UX:3 technology

- R&D status and efficiency limit


LED-market expectation by application segments…

2008 2009 2010 2011 2012 2013

OthersIlluminat ionAutomot iveM obile AppliancesSigns/Displays

$5.1bn

$14.9bn

Source: Strategies Unlimited, Aug 2009

2008

2013

… Display-back lights and solid state lighting will dominate the market in 2013

Signs/Displays

Mobile Appliances

Automotive

Illumiation

Others

Signs/Displays

Mobile Appliances

Automotive

Illumiation

Others

Global LED market forecast by application

$0.8bn

$7.2bn

CAGR +55%


A major contributor is LED backlight LCD TV

14%

40%53%

65%75%

2008 2009 2010 2011 2012

LCD TVLCD MonitorNotebook

Source: Displaybank Nov 2008

… driven by much higher LED penetration rates than e xpected back in 2008

LED backlight market share per application LED backlight penetration rate in LCD-TV

%

0

10

20

30

40

50

60

2008 2009 2010 2011 2012

Nomura, Oct 2009

DisplaySearch, Jun 2009

Displaybank, Nov 2008

The more recent a market study is, the higher LEDpenetration rates are forecasted within LED LCD TVsegment

• Expected share in 2010 is already 15-20%• Possibly reaching >50% share in 2012

– depending on CCFL BLU vs LED BLU cost

Very fast transition

• TV will replace notebook as biggest market within the LED backlighting segment

• Monitor is forecasted to remain with minor share


What is driving high LED penetration rates? Why is LED backlighting increasing that fast?

How?Why?

…superior to conventional CCFL backlight LCD TV at affordable cost

…mercury free, energy efficient TVs withlong lifetime

…enabling ultra-slim TVs

…by potential reduction of motion-blureffect (impulse driving) and highercontrast ratio (1D/2D/3D dimming)

Better picture quality…

Higher design flexibilities…

Eco-friendly…

Launch of intense marketing campaignsforming „LED TV“ as a new segment…


Intense marketing campaigns were started to createawareness of LED-BL

Samsung has rolled out a year-long advertising plan , spending multi-millions of US$

The primary mission of the effort is to promote LED TV as a new TV category, driving homethe message that the LED backlighting delivers “mega contrast ” ratio picture performance, ultra-slim panel designs and environmentally friendly attributes. The effort encompasses

• Online advertising (incl marketing ploys such as ‘extreme shepherding‘ on youtube.com)

• Print advertising

• National network and cable TV spots

• Mall showcases

• Eco cash back campaigns


Other companies followed trying to differentiatethemselves

… the reaction from Sharp and LGE: Full LED backlight

• Emphasis on LED technology advantage rather than design


RoW

NAFTA

Europe

South America

Asia Pacific

New regulations are being established focusing on C O2reduction and ban of hazardous substancesLED technology is both RoHS compliant and energy eff icient

Directive for Energy using Products (EuP)

Australia’senergy rating


Power Consumption Comparison Based on 46” BLU with Equivalent Luminance on LCD

--Total no. of LEDs

~100W60W~95WNANAPower Consumption

(2D-Dimming)

~130W75W~124W128W152WPower Consumption

(0D-Dimming)

165W95W155W160W190WPower Consumption

>50kh>50Kh>50kh~50kh~30khLifetime

124%80%100%82%97%NTSC Color Gamut CIE 1976 u’v’

RGB

LED

Standard White

LED

HCGW

LED

Standard

CCFL

High Gamut

CCFLLight Source Type

LCD PANEL LCD PANEL LCD PANEL

Conventional CCFL BLU White LED BLU RGB LED BLU


0

50

100

150

200

250

300

32 37 42 47 52 57

Diagonal Size (inch)

Pow

er d

issi

patio

n (W

)

Energy Star 2010

Energy Star 2012

EuP class A 2010

EuP class A 2012

Only LED based backlight units will be able to fulfill2012 class A energy regulation standards

New regulations of TV power limits

• CCFL based TV are still able to fulfill 2010 regulations, both EuP and Energy Star

CCFL LCD TV

LED LCD TV

2W p inch

3W p inch

• Reducing the power consumption further down to 2W per inch, necessarily requires LED backlight technology

• Brightness increase of LEDsand/or local dimming will additionally reduce power consumption and will enable designs of 1.5W per inch in the near future


The Lighting Picture Today

Volume “White” BusinessR&D Transition to VolumeMarket Entry

• Very Large Installed Base & Infrastructure

• Established Value Chain & Know-How (up to End-User)

• Product Evolution:Brilliance & Performance

• €/lm Initial Cost Benchmark

• Volume Availability

• Transitioning into Growth Phase

• Tremendous LED Improvements…(Eff. 75 - >100 lm/W today, 150 lm/W in sight)

• Long Lifetime & High Robustness

• Increasing SSL Awareness from first Lighting Applications (Architainment, Streetlight, Shop, Decorative)

• Economics Starts to Work - TCO Break-Even in Quite Some Applications Reached

LED

OLED

• R&D…Market Entry In Sight

• Disruptive Flat Light Innovation

• “Light where it has never been before”

„Classical“


LEDs Can Play their Benefits Everywhere!USPs per Field of Application

• Design freedom

• Infinite color change possibilities

Hospitality

• Safety feeling (homogeneity, no glare)

• Energy saving

• Instant on, dimming

Street, Tunnel, Parking

• Light quality and comfort

• Energy saving

• Additional features

Light@home

• Energy saving

• Direct and indirect light

• Different settings possible

Office lighting

• Light quality

• Changeable light (colour)

• Energy saving (freezers)

Shop lighting

Architainment

• Design freedom

• Infinite color change possibilities


The Inspiration of Light in Modern ArchitectureLight Needs to Suit the Architecture AND the People

In modern architecture, lighting is a part of the architect’s phantasy. It can support the structure of a building and point out it’s style.

LEDs light up Turning Torso in Malmo Attractive architecture supported by

modern lighting

Light is more than just photons..

Light gets attention

Light captures the imagination of people.

Light means hospitality

It invites people and makes them stay a little longer.

Light makes the difference

Facades structured by light and light installations highlight modern architecture and add attractiveness to it.

Playful use of colors

Emphasize old structures with decent LED lighting

High recognition with bright facades


Illumination, Guidance, and Security

LEDs for Street- and Outdoor LightingLight where it should be!

250W120W

SodiumLED

Light takes on responsibility

� Energy saving with efficient light sources, no hazards with LEDs.

� Avoiding light pollution – direct the light to where it should be!

� Lights on – only where needed. Intelligent controls save.

Light promotes security

� Better safety feeling due to better recognition of trees and faces.

� Mesopic Vision enhanced with LED night lights.

� Residential areas with added security feeling.

Light as a guide


Mega TrendsShaping Tomorrow’s Markets

Demographic Change

Aging & Growing Population

Better light for the elder generation

LEDs can help the elder generation with better light - for light comfort and medical treatment.

Urbanization

More people in cities than rural areas

Safety and guidance

Intelligent light systems, communication and traffic management – LEDs play key role for mobility, at the same time saving energy.

Globalization

Global growth is unequally distributed

Emerging countries significantly gain

Global marketplaces

Innovative SSL technology is participating in the worldwide markets and standardi-zation committees.

Greenhouse gas emissions

Global surface temperature increase

Sustainability and energy save

LEDs contribute to the environmental challenges!Innovations support global care.

Climate Change


Energy Saving with Solid State Lighting

Potential savings in 2030*:

�1300 TWh of electricity

⇔ 650 large power plants (200 MW)

�650 million tons CO2 emissions

⇔ new forest with ~ 2 x area of Germany⇔ 2 billion barrels of oil

* Results of the Ad-hoc Advisory Group for „ICT and Energy Efficiency“; European Commission

TODAY: Replacing existing installations with best available alternatives would save 30% of energy going to lighting (according to ELC).

FUTURE: Combining LEDs, sensors and embedded software in ambient intelligent lighting networks have the potential to save an additional 40%*.

0

80

100

120

140

160

180

2004 2006 2008 2010 2012 2014 2016

Lich

taus

beut

e[lm

/W] LED

Fluoreszenz-lampen

20

40

60

Glü hlampen

Halogenlampen

0

80

100

120

140

160

180

2004 2006 2008 2010 2012 2014 2016

Lich

taus

beut

e[lm

/W] LED

Fluoreszenz-lampen

20

40

60

Glü hlampen

Halogenlampen

0

80

100

120

140

160

180

2004 2006 2008 2010 2012 2014 2016

Effi

cacy

[lm

/W]

LED

fluorescentlamps

20

40

60

incandescent lamps

halogen lamps


LED LampParathom A55

with Golden Dragon LEDs

8 W

Lifetime: 25.000 h

Compact Fluorescent Lamp CFL

DULUX Superstar Classic A

8 W

Lifetime: 10.000 h

Life Cycle Assessment of LED LampsComparative Assessment

� Complete life cycle analyzed:

� Comparison between:

Incandescent Lamp GLS

Classic A

40 W

Lifetime: 1.000 h

25 x 1 x2,5 x

Resources Manufacturing Use End of LifeTransport


Life Cycle Assessment of LED lamps Preliminary Results

�Cumulated energy demand and overall life cycle of LED lamp ≈ 2,5 x CFL ⇒ nearly identical impact per hour of use compared to CFL (including investigation on abiotic depletion, human toxicity, eutrophication, acidification and global warming potentials).

�Future: efficiency improvement of LEDs and making use of directionality of light will further reduce CED.


SSL key factor: Efficiency

Luminaire efficiency standards (e.g. KSC7658): 5500K: 7 0lm/W

0 20 40 60 80 100 120

Driver loss

Thermal loss

Optical loss

Standard

efficiency (lm / W)

10-20%

10-20%

10-20%

70 lm/W

107 lm/W

- 107 lm/W or 125lm UW LED device needed for a 70 lm/W lu minaire


The Key Issues to Make LEDs Ready for Prime Time

� Provide high quality white light at highest efficiency

� Make SSL easy to control

� Control cost - reduce payback times � go for high maintenance & high energy cost applications

� Secure the investment by getting the “-abilities” in place: � upgrade-ability

� reorder-ability

� compatibility

� Focus on excellent system reliability

� Play the unique technology advantages� Color & dynamic light

� Small size� Unique forms

� Light patterns and intensity distributions


Overview






LED brightness for blue 1W Power-LED at OOS

9/2004 9/2005 9/2006

Opt

ical

Out

put P

ower

(m

W)

PowerThinGaNin Dragon w. lens

9/2007 6/2008

≈≈≈≈ 4-fold brightness increase within 4 years

⇒⇒⇒⇒ Many applications became possible

Advanced R&D device

602 mW

643 mW

170 mW100

200

300

400

500

600

700


Our Technologies

Light extractionThermal managementλλλλ-conversion

Internal quantum efficiency

Light extractionElectrical losses

ηint ηextr ηpackageηWall plug = . . .ηelectr

.

Substrate

Valence Band

Conduction Band

Photons

“Bandgap Engineering”

Epitaxy

PackagingChip Processing


Compound wafer „artificial wafer“

Epitaxial layermetal stack

carrier

4. Substrate Removal

1. Epitaxy

Sapphire

epi-layer

3. Bonding

2. Metalization

Carrier

GaN

Ga & N2

LLO: OSRAM patent

ThinGaN-Wafer Process

ThinGaN


ThinGaN the way to improve light extraction

• low internal absorption ⇒ reduce / omitt n-contacts

GaN

textured surface

Thinfilm principle:

contact

Carrier substrate

^

Solder layer

PowerThinGaN top viewPowerThinGaN; scematic side view

QW

• prevent absorption in substr. ⇒ improve mirror reflectivity

• prevent waveguiding ⇒ optimize surface roughness

Present actions:

Mirror layer

1mm

Light extraction of >80% is reached


Top view

Latest improvement: UX:3 Technology at OOS

Conductive carrier

n

p

Cross sectional view

Conductive carrier

n

p


Luminance @ 1,4 A

Linearity

n-contactAbsorption vrs.

Series resistance

Luminance

Top viewLuminance @ 2,8 A

Standard ThinGaN ThinGaN UX:3


UX:3 Technology

Benefits of UX:3 Technology:- 5% brightness increase for blue and green emission (@350m A)

- 10-20% brightness increase for white LEDs

(improved chip-phosphor interaction)

- Reduced droop – just 15% deviation from linear behaviour (350mA -> 1A)

- Reduced forward voltage (200mV @ 1A)

Conductive carrier

n

p


Conductive carrier

n

p


PowerThinGaN UX:30%

50%

100%

150%

200%

250%

0 200 400 600 800 1000

If (mA)

1mm p-up

1mm n-up

1mm p-up; @ 2,8 @

1mm n-up; @ 1,4 AΦΦ ΦΦe

norm

. on

n-up

at

350m

A


Overview






R&D 1mm Power ThinGaN blue and green

Performance of 1mm² R&D chip in Golden Dragon+ @440 nm

Performance of 1mm² R&D chip in Golden Dragon+ @532 nm

Advanced Technology: 643 mW

�Advanced Technology Blue: 643 mW; Vf= 3.24 V, WPE = 57%

J. Baur et al.: IWN08M. Peter et al: IWN08

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5

I [A]

Ie[W

]

601,4 mW@ 350 mA

Driving Current [mA]

Lum

inou

s F

lux

ΦΦ ΦΦv

[lm]

0

20

40

60

80

100

120

140

160

180

0 200 400 600 800

0

20

40

60

80

100

120

140

160

180

200

Lum

inou

s E

ffica

cy [l

m/W

]

3199 mW@ 3 A

1966 mW@ 1,4 A

90 lm/W

109 lm


Status OSRAM R&D cold white

R&D result using optimizedchip, conversion and packagetechnology

Data for 1mm² chip at 350mA

CCT: 5000K cx=0.349, cy=0.393

Luminous flux: 154lmEfficacy: 136 lm/W

0

100

200

300

400

500

600

0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4

forward current (A)

lum

inou

s flu

x (lm

)

0

50

100

150

200

250

300

WP

E (l

m/W

)


Status OSRAM R&D warm white

R&D result using optimizedchip, conversion and packagetechnology

Data for 1mm² chip at 350mA

CCT: 2999K (on Plank)CRI: 82Luminous flux: 124lmEfficacy: 104 lm/W0

50

100

150

200

250

0 0,2 0,4 0,6forward current (mA)

lum

inou

s flu

x (lm

)

0

50

100

150

200

250

effic

acy

(lm/W

)


400 500 600 700

wavelength (nm)

inte

nsity

(a.

u.)

400 500 600 700

wavelength (nm)

inte

nsity

(a.

u.)

Efficacy and Color RenderingSimulations for Various Down Conversion Approaches

400 500 600 700

wavelength (nm)

inte

nsity

(a.

u.)

�CRI and Efficiency strongly depend on chosen phospho r solution

red & green phosphor 85 %89

CRI Efficiency

Daylight 100

standard phosphor 80 100 %

narrow yellow phosphor 59 119 %

Cx & Cy = 0,33

constant opt. Power of blue chip


� High intensity in orange-red spectral region (~ 600 nm) generates pleasant “warm white” light.

� CRI > 80 over full CCT range;Only moderate dependence on CCT.

� Only ~10% brightness difference between 5000K and 2700K.

New Warm White Phosphor SolutionCRI 80 – Technology Features


Warmwhite by Combination of “White” and Red LEDsUse of Standard Chips

360 400 440 480 520 560 600 640 680 720 760

wavelength / nm

inte

nsity

0 mA red

400 mA red

Module: 6 white & 2 red 1mm 2-chips: 100lm/W el; CRI 90; 3000K; 850lm

InGaNchip

White phosphor

InGaAlP chip


Hyper Red LEDKey to High Color Quality and Other Applications

LH W5AMλ-Peak : 660 nm

P-out: ~300 mW @ 400mA

LED: Golden Dragon Plus

Chip size: 1mm2


0,32

0,34

0,36

0,38

0,40

0,42

0,44

0,46

0,32 0,34 0,36 0,38 0,40 0,42 0,44 0,46 0,48 0,50

x

y

I (InGaN) = 350 mA,I (InGaAlP) = 0 - 400 mA

ANSI warm white color groups

Warmwhite by combination of white and red LEDs

…both warm white color coordinates and high CRI are ac hieved.

increasing InGaAlP currenttarget color range

for “white” LEDs

2800K warm whiteCRI = 90

6x white+

2x red:


Optimization fields for ThinGaN chips

Brightness (I e), droop ( = linearity), voltage (U f), homogeneity and thermal

conductivity (R th) are main areas of improvement for ThinGaN Chips.

0

500

1000

1500

2000

2500

3000

3500

0 0,5 1 1,5 2 2,5 3 3,5

0%

10%

20%

30%

40%

50%

60%

„Droop“Ie+Uf

Ie + droop + U f

(P∞U2; Ie ∞ I)

Ie

Droop + I e

ΦΦ ΦΦe

(mW

) in

GD

+

WP

E (%

)

carrier (Rth)

Chip design:

Luminance:

1.4A

Current (A)


787mW

Electrical and optical power flow; optimization limit

1134mW

El. loss IQE 80% LEC 86%

Heat: 148mW

986mW

199mW 110mW

R&D status

⇒⇒⇒⇒ 75lm white0.35A; 3.2V

R&D status:

Popt =677mW; 60%

chip out

Pheat=457mW; 40%

677mW Popt. : 643mW blue at 350mA

⇒⇒⇒⇒ Limit for 1mm chip is at about 180lm at 350mA

Chip optimization limit:

Heat: 75mW 95mW 85mW

850mW1020mW

El. loss IQE 90% LEC 90%

945mW

0.35A; 2.9V

765mW Popt =765mW; 75%

chip out

Pheat=255mW; 25%

Chip limit / Dragon:

≈≈≈≈ 180lm white

Popt. : 727mW blue at 350mA

155lm white


⇒ For optimized lm/€ device low droop chips and

good R th materials for minimized chip areas are needed

Popt =642mW; 54%

Pheat=547mW; 46%

Power flow at increased currents

1000mA:350mA:

Pelectr. =1.13W

Popt =1595mW; 44%

Pheat=2.02W; 56%

Pelectr. =3.62W

Popt =2.09W; 39%

Pheat=3.23W; 61%

Pelectr. =5.32W

1400mA:

⇒⇒⇒⇒ Efficiency loss at higher current and current density („d roop“)⇒⇒⇒⇒ Heat inceases more than linear with current and current de nsity⇒ Current density increases with decreasing chip size⇒ Thermal resistance increases with decreasing chip area⇒ Cost decrease with deceasing chip area


Summary

- LEDs are in transition to SSL volume market

- Enormous energy saving potential (2030: 1300TWh)

- UX:3 technology yields significant improvements

- Cold white: 155lm / 134lm/W @350mA

- Warm white: 124lm / 104 lm/W @3000K, CRI82, 350mA

- Efficiency limit for cold white at about 180lm


Acknowledgements: Entire Osram Opto Team and Partner sSupport byBMBF European Union founding

Thank You for Your Attention!

600 students from School of Engineering at the Univ ersity of Calgary, Canadasend LED illuminated message to International Space Station.

Documents

7th Nitride Semiconductor Application Workshop 2010 ... · PDF fileRecent Activities of LED-Developments in Europe LED Technology enabling new Applications 7th Nitride Semiconductor