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A Global Leader in Integrated Passive Devices
www.OnChip.com
OnChip Devices
A Global Leader in
Integrated Passive Devices
September 2014
1
A Global Leader in Integrated Passive Devices
www.OnChip.com
Corporate Profile
2
Established 2007Company is 100% self-funded
HeadquartersHeart of Silicon Valley (Santa Clara, CA)
Strategic StrengthLow-cost Silicon Wafer Foundry
Installed capacity 14K wafers/month
Core ProductsIntegrated Passive DevicesESD/TVS Diodes and Silicon Carriers for HB LEDs Manufacturers
Wafers/Month Dies/Wafer Monthly Capacity
14Ku 50Ku 700Mu
A Global Leader in Integrated Passive Devices
www.OnChip.com
Key Customers
3
A Global Leader in Integrated Passive Devices
www.OnChip.com 4
The Need for Integrating Passive Devices
• Average Passive Usage Model– CDMA = 620 per phone– WCDMA 3G = 775 per phone– GSM = 380 per phone
• Impact on the solution cost of the growth of passive components in the handset:– Manufacturing insertion costs– Procurement costs– Inventory costs– QA/Reliability costs– Average total passive placement
costs are 1.7x the total of all discrete IC’s for typical handset
300
350
400
450
500
550
600
650
700
750
400,000
450,000
500,000
550,000
600,000
650,000
700,000
750,000
Avera
ge P
assiv
es p
er
Ph
on
e
Ph
on
e S
hip
men
t (0
00s)
Average Number of Passive Components per Cell Phone
Year
Passives Growth in Handsets
A Global Leader in Integrated Passive Devices
www.OnChip.com 5
IPD Value Proposition
Replaced by 3 IPDs58 Discrete components
Board Space Savings of 90% Cost Savings of 40%
Better EMI Filter performanceImproved board reliability
Advantages of Integrated Passive Devices (IPD)
A Global Leader in Integrated Passive Devices
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Before After
Value Proposition
Integrated Passive Devices
OnChip
Replacing 56 components with a single IPD
A Global Leader in Integrated Passive Devices
www.OnChip.com 7
Integrated Passive Devices
IPD Silicon chip with
approximate size of 0805
replaces 43 Rs & Cs and 34
Diodes
A Global Leader in Integrated Passive Devices
www.OnChip.com 8
Passive ComponentsCapabilities
Resistors
2Ω to 1GΩ
±0.1% absolute tolerance
±0.02% ratio tolerance
Very low TCR < ±25ppm/ oC
Low inductive effects
Capacitors
1pF to 1,000pF
25V to 100V Breakdown Voltage
±5%, ±10%, ±20% tolerance
Very low TCC < ±50ppm/ oC
Low ESR
Res-Cap ArraysAccurate Time constants
±5%, ±10%, ±15%
Very low cross-talk (< 2%)
Zener DiodesClamp Voltage 6V to 100V
30kV ESD Protection
Back-to-back for AC signals
A Global Leader in Integrated Passive Devices
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Product Families
Bare-die
Wire-Bondable
Flip Chip
Micro BGA
Packaged
Semi IC Pkgn.
Resistors
Silicon & Ceramic
Bare-die
Wire-Bondable
Micro BGA CSP/Ball Drop
Flip Chip Packaged
Semi IC Pkgn.
Diodes
Zener & Low-Cap
Bare-die
Wire-Bondable
Capacitors
Silicon
OnChip Products
Made in the USA
A Global Leader in Integrated Passive Devices
www.OnChip.com 10
4, 6 & 8 channels of EMI/ESD
Offered as CSPs and in uDFN
C C
R
Input Output
PART
NUMBER
RATED
STAND-
OFF
VOLTAGE
MINIMUM
BREAKDOWN
VOLTAGE
MAXIMUM
REVERSE
LEAKAGE
CURRENT
TYPICAL
FORWARD
VOLTAGE
MINIMUM
ATTENUATION
@ 800 to 3,000
MHz
CUT-OFF
FREQUENCY
50-OHMS
SOURCE &
LOAD
RESISTANCE
R +/-20%
CAPACITANCE
C +/-20%
EMF1101-04 6 Volts 7 Volts 0.1 uA 0.8 Volts -25dB 105 MHz 200-ohms 15-pF
EMF1101-06 6 Volts 7 Volts 0.1 uA 0.8 Volts -25dB 105 MHz 200-ohms 15-pF
EMF1101-08 6 Volts 7 Volts 0.1 uA 0.8 Volts -25dB 105 MHz 200-ohms 15-pF
ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless Otherwise Specified
Circuit per channel
EMI Filters withESD Diodes
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TVS/ESD Protection
Zener & Low-Cap
Diodes
A Global Leader in Integrated Passive Devices
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CL
RF Antenna
Signal Line
OC1214-01TR
3-Lead SOT23
Switch
GND
GND
PA
LNA
Not
Connected
1
2
RF Switch & Amplifier ESD Protection DiodesApplication Schematic for OC1214-01
12
ESD Protection
A Global Leader in Integrated Passive Devices
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ESD2100-02TR
ESD2100
-04TR
Upstream
USB Port
Downstream
USB Port
Downstream
USB Port
USB
Controller
USB 2.0 Port ESD Protection DiodesApplication Schematic for ESD2100-02 & -04
13
ESD Protection
A Global Leader in Integrated Passive Devices
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High Speed (USB, 1394, HDMI,..) Port ESD Protection with Low-Cap Diodes (ESD2100)
Pin Configuration
4-channel version
Electrical Specifications MIN TYP MAX UNITS
Operating Supply Voltage (VP) 3.3 5.5 V
Operating Supply Current (IP); VP=3.3V 8 uA
Diode Forward Voltage (IF= 8mA; @ 25°C)
Top Diode 0.6 0.8 0.95 V
Bottom Diode 0.6 0.8 0.95 V
Leakage current at VP=5V, 25C - ±0.1 ±1 uA
Signal Clamp Voltage at 25C @ 10mA 8 10 12 V
ESD Protection
Contact discharge per IEC 61000-4-2 standard
Clamping voltage during ESD discharge MIL-STD-
883D (Method 3015), 4kV- ±10 - V
Input Capacitance 0.6 0.8 1 pF
ELECTRICAL OPERATING CHARACTERISTICS
8 - - kV
Features: Small package saves board space
Protects 2, 4, 6 & 8 I/O lines
ESD protection to over 8kV contact discharge per IEC-61000
14
ESD Protection
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ESD0504P
N/C
2GND
5
4
31
6
PIN ASSIGNMENTS BONDING DIAGRAM
CIRCUIT SCHEMATIC
& PACKAGEVcc
Vcc
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0201 & 0402 Case-size Packages
Packaged ESD Diodesfor HB LED
Pad
Pad
Pad
Pad
0.3mm
0.6
mm
0.6mm
1m
m
0201
0402
Package DimensionsElectrical Specifications: Min. Typ. Max. Unit
Leakage current at V=5V, 25C <1 mA
Signal Clamp Voltage at 25C:
Breakdown Voltage, 1mA 6
Breakdown Voltage, 1mA -6
ESD withstand voltage*:
Human Body Model (MIL-STD-883, method 3015) 8 kV
ESD withstand voltage*:
Contact Discharge Method (IEC 61000-4-2) 8 kV
Clamping voltage during ESD discharge* Positive 22
MIL-STD-883 (Method 3015), 4kV Negative -15 V
Diode Input Capacitance @ 0V 3 pF
Series Inductance 0.4 nH
Temperature Range:
Operating -40 125
Storage -65 150
V
C
Ultra small ESD diodes in a 0402
& 0201 molded Plastic package
ESD protection to over 8kV
contact discharge per IEC-61000
Can handle multiple ESD strikes
Protects 5.3V AC (bi-directional)
signals
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Pad – a1
Pad – a2
Electrical Specifications Min. Typ. Max. UnitLeakage current at V=4V, 25C - 0.1 1 uA
Signal Clamp Voltage at 25C @ 10mA 8 10 12 V
ESD Voltage "Contact" Discharge per
IEC61000-4-2 Standards 30 - - kV
Clamping voltage during ESD discharge
per IEC61000-4-2 at +/-30kV- +/-10 - V
Input Capacitance 13 pF
Temperature Range:
Operating -40 150 C
Storage -65 150
-20mils (0.6mm)
10
mils
(0.3
mm
)
ESD0201 Silicon ESD/TVS Zener Diodes(Die Size: 20mils x 10mils x 10mils)
Solder Pad Material OnChip P/N
Sn/Ag4/Cu0.5 (RoHS Compliant) ESD0201-01FR
5um electroless Ni/Au bumps (RoHS Compliant) ESD0201-01FR-Au
Full Ordering Part Number
Flip Chip Diodesfor HB LED
These
A Global Leader in Integrated Passive Devices
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ESD8x8 Diode Bare-die with Single Wire-bond(Die Size: 8mils x 8mils x 4 mils)
8 mils(200-um)
8 mils(200-um)
Back-metal
for die-attach
Top-metal
for wire-bonding
Back-metal
for die-attach
Top-metal
for wire-bonding
8 mils(200-um)
8 mils(200-um)
8 mils(200-um)
8 mils(200-um)
Back-metal
for die-attach
Top-metal
for wire-bonding
Back-metal
for die-attach
Top-metal
for wire-bonding
Electrical Specifications: Min. Typ. Max. Unit Leakage current at V=5V, 25C <1 mA
Signal Clamp Voltage at 25C: Positive Clamp, 10mA Negative Clamp, 10mA
5
-5
7
-7
15
-15
V V
ESD withstand voltage*: Human Body Model (MIL-STD-883, method 3015)
8
kV
ESD withstand voltage*: Contact Discharge Method (IEC 61000-4-2)
2
4
kV
Clamping voltage during ESD discharge* Positive MIL-STD-883 (Method 3015), 4kV Negative
+15 -15
V
Diode Input Capacitance @ 0V * 3 pF
Temperature Range: Operating Storage
-40 -65
150 150
C
ESD8x8 Diodes are widely used for protecting High Brightness InGaN LED Chips
from ESD Damage as well as Over-voltage Stress
These back-to-back
diodes are available with
Signal Clamp of 5V, 12V,
24V & 30V
Diodes for HB LED
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LED LED
Single ZenerDiode
Back-to-backZener Diodes
LED
LED
LED
LED
LED
LED
LED
LED
LED
LED
Hi-VoltageSingle Zener
Diode
Back-to-backHi-Voltage
Diodes
High Brightness (White/Blue/Green) LED lamps particularly those built using Sapphire substrates are very sensitive to Electrostatic Discharge and Voltage Surge. OnChip’s Zener diodes can provide protection from both positive and negative pulses for a single LED or an entire string of LEDs.
Zener Chip Protecting HB LEDs
A Global Leader in Integrated Passive Devices
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HB LED Protection
Failure to adequately protect LEDs from voltage spikes cause current leakage or they appear dim or dead
OnChip offers Zeners that preventelectrical damage
The Company also offers Carriers that greatly enhance the performance & reliability
_
LED
Chip
+
Wire-bond
ESD
Chip
A Global Leader in Integrated Passive Devices
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Single Zener Chip protecting Multi LED Chips
OnChipTVSDiode
A Global Leader in Integrated Passive Devices
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Thin Film MNOS
Capacitors
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C
Wire-bondable
pad
Backside of
Silicon Chip
Thin-Film Back-contact
Capacitor Chip
10 x 10 mils sq. silicon Capacitor
Chip (250 micron x 250 micron)
As thin as 4 mils (100 micron)
Capacitance range of 4.7pF to 30pF
Tolerance as tight at ±10%
A Global Leader in Integrated Passive Devices
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Dual Thin-Film
Capacitors
C1 C2 CSERIES CPARALLEL
68 68 34 136 68±5%, ±10%
and ±20%30 45
Capacitance
Code
Available
Tolerances
Working
Voltage
(volts)
Breakdown
Voltage
(volts)
Capacitance (pF)
Chip Layout & Pad Locations
Parameter Symbol Dimension Units
Capacitor Length (typical) (Note)L 0.95 / (0.0374) mm / (inches)
Capacitor Width ( typical) (Note)W 0.95 / (0.0374) mm / (inches)
Capacitor Thickness T 0.23-0.13 / (0.009-0.005) mm / (inches)
Die Stepping Distance on Wafer in X Direction XSTEP 1,000 microns
Die Stepping Distance on Wafer in Y Direction YSTEP 1,000 microns
Physical Dimensions
OnChip Product Name: DTCA
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Precision Thin Film
Resistors
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Thin-Film High MegΩ
Resistor Chip
Operating Temperature Range -55C to 175C
Resistance Range 5MegΩ to 150MegΩ
Maximum Power Rating @ 25°C 100mW
Temperature Coefficient of Resistance 500ppm/⁰C
ELECTRICAL CHARACTERISTICS
Device Format
Estimated Die Size (depending on saw blade thickness):
X = 42 to 44 mils
Y = 52 to 54 mils
Bonding Pads: 13x13 mil sq (typical)
Substrate Silicon 10±2 mils thick
Isolation Layer SiO2 10,000Å thick, min
Backing Lapped (Gold & Silver optional)
Pad MetalizationAluminium 10,000Å thick,
min(15,000Å gold optional)
Mechanical Specifications
TA with Tantalum Nitride Resistor Film and XTM with Silicon Chrome
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20 x 20 mils sq. silicon Resistor Chip
Resistance range of 4.7-ohms to 1Meg-Ω
Tolerance as tight at ±0.1%; TCR as low as
±25ppm/°C
Requires single wire-bond
R
Wire-bondable
pad
Backside of
Silicon Chip
Thin-Film Back-contact
Resistor Chip
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34 x 34 mils sq. silicon Resistor Chip
Resistance range of 2.5kΩ to 275kΩ
21 bond pads and a string of 20
resistors in series
Bonding option to achieve desired
resistance
Thin-Film Multi-tapped
Resistor Chip
Multi-terminal resistor chip offers designers a wide range of resistance
values on a single chip. Bonding pads segment the total resistance into ten
single elements of resistance and 10X elements of resistance.
Substrate Silicon 10±2 mils thick
Isolation Layer SiO2 10,000Å thick, min
Backing Lapped (gold optional)
Metalization or Pad Aluminium 10,000Å thick, min
(15,000Å gold optional)
Mechanical Specifications
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R R R R
•Die Size: 60 mils x 30 mils
•Substrate Material: Silicon
•Resistor Value (R): 4 x 50Ω
•Tolerance: ±0.5%
Thin-Film Flip Chip
Resistor Arrays
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Thin-Film Power
Resistors
0.050” 0.035”Resistor Area
Bond Pad
Bond Pad
0.025”
0.005”
0.020”
0.016”
Operating Temperature Range -55C to +125C
Resistance Range 47 ohms to 470 ohms
Resistance Tolerance 5%
Maximum Power Rating > 5W
Temperature Coefficient of Resistance < ±25ppm/°C
ELECTRICAL
Resistive Film Tantalum Nitride
Substrate Material Aluminum Oxide (Al2O3) or Aluminum Nitride (AlN)
Bonding Pads Aluminium or Gold
Back Metal Gold (optional)
Die Size 25mils x 50mils ±2 mil
Die Thickness 10, 15, 20 & 25 mils ±2 mil
MECHANICAL SPECIFICATIONS
5W Resistor on Aluminum Nitride Substrate
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Coarse Trim
Fine Trim
Medium Trim
TL Series 1MegΩ ±0.5%
Thin Film Tantalum Nitride Resistor Trim Features
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New Product Flow
Final Product
Spec
Design &
Layout
Design
Review
Data to
Mask Vendor
CharacterizationEngr.
Datapack
Mask
Fabrication
Review
Mask Plot
Release to
Production
Spec.
Verification
Final Test
Laser Trim
Visual Inspection
QA
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Competitive Advantage
Established strong engineering & manufacturing infra-structure
Invested significant capital in developing technologies and establishing processes
Launched a broad range of Passive Products
Setting the standards in Resistors & Capacitors
On-shore Silicon Wafer Fab
Low-cost fab with a significant installed capacity
Offering competitive pricing & quick turn-around
A Global Leader in Integrated Passive Devices
www.OnChip.com 34
Thank you!
