Analog Design Methodology Jnotor r3

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    INVEN

    T

    IVE

    Analog Design Methodology in a Time

    to Market Environment

    John NotorJuly 17, 2009Rev 3

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    July 20, 20092

    Overview

    Cadence Services Overview

    Cadence AMS Project Flow and Management

    Cadence Projects vs Academic Research

    Example Designs

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    Cadence Holistic SolutionsEnabling customers to achieve breakthrough results

    Ex

    tendingCus

    tomerCapabilities

    Maximizing Results from Cadence Technology Platforms

    BoardPkgDFT

    &DFM

    TimingElectrical

    Verify

    PhysicalImplement

    FunctionalVerification

    Digital IP

    Verif IP

    AMS IP

    SystemDesign

    CadenceLeading-edge

    EDA

    Products

    Custom, On Site, On Line, Public Course Offerings

    Design Ready Process Design Kits

    Design Centric Flows, Methodologies, CAD Support

    Training

    DesignEnvironment

    Enablement

    Partners: Verification IP, Silicon IP, Silicon & Board Mfg, Packaging, Test

    DesignAugmentation

    ALLEGRO

    Package

    and PCB

    VIRTUOSO

    CustomIC

    ENCOUNTER

    DigitalIC

    INCISIVE

    Verification

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    Worldwide Services Team

    USA

    San Jose

    Livingston

    Columbia

    Shanghai

    Paris

    Bracknell

    Cary

    Munich

    Yokohama

    Bangalore

    Collaboration HubHosting Hub

    Noida

    Zelenograd

    Melbourne

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    Analog/RF/Mixed-signal Design and Methodology

    Broad and Deep Design Expertise 83% SoC designs, 90% low power, hi-perf CMOS

    111 analog specific tapeouts in the last 4 years

    Package/IO interactions, digital substrate

    coupling/isolation, multiple power, device matching,

    stress, well, NBTI/LOD feature implementation AFEs, Datacom, RF, Synthesizers, PLLs, A/D, D/A

    Efficient and Effective Design Environment

    Design and methodology project collaborations

    Experts in design environment enablement

    Design-ready PDK customization

    Reliable Tape-out Success

    98.1% First Pass Functionality

    87.4% First Pass to Production

    96.1% Full Parametric Operation with 1 metal spin 100+ products in volume production

    .35u to 40nm for CMOS, Bipolar, BICMOS, SiGe

    System-on-Chip

    Logic Design & Verification

    Silicon/Package/Board

    Analog/Mixed Signal/RF

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    Design Flow Focused on Achieving First Pass Success

    Extraction

    Re-Simulation

    System DesignSystem Design Matlab Custom

    Spectre (RF)

    Analog Design & Simulation

    Spectre

    VSE-L

    ADE-XL (Corners)

    Spec Review, PartitioningSpec Review, Partitioning White board NC SIM

    Architectural SimulationArchitectural Simulation AMS Designer

    Physical Design VLS-XL VCAR - Custom routing

    Digital Synthesis

    Digital Place & Route (VDIO)FE SE

    RTL Compiler NCSIM

    Simulation VerificationSimulation VerificationMMSim: NCSIM, Spectre, Ultrasim

    FloorplanningFloorplanning VLS-GXL Encounter

    MS Design & Simulation

    Chip Assembly VLS-XL

    NC SIM

    Spectre/Verilog AMS

    MS Design & Simulation

    UltraSim

    VSE-L

    ADE-XL (Corners)First Encounter - Floorplanning

    AMS Designer

    VCAR power grid

    Spectre UltraSim

    Chip VerificationAssura DRC/LVS/RCX/RF

    VAVO/VAEO EM/IR

    PVS DRC

    UltraSim

    SOC Encounter

    DFIIbased

    design

    Excel SystemVue

    Verilog (D, A, AMS)

    PVS DRC

    Verilog (D, A, AMS)

    Conformal

    Excel

    Assura DRC/LVS/RCX/RF

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    Emphasis on Top Down Mixed Signal Design Flow

    HDLSchematicAbstract

    HDLSchematic

    Functional Sim(Pin for Pin)

    Block Level:Design / SynthesisCorner VerificationSparesLayout constrains

    Top Level SimulationDevelopment

    Top LevelDevice Verification

    Functional

    Simulation

    AnalogCircuits

    Analog

    Circuits

    Mixed SignalBlocks

    Logic

    HDL

    HDL

    Verilog/HDL

    Verilog

    HDLSchematicAbstract

    HDLSchematic

    HDL/VerilogSchematicAbstract

    HDL/VerilogSchematic

    VerilogRTL

    Abstract

    VerilogRTL

    Block Level:Abstract Creation

    Schematic

    HDL

    Verilog/HDL

    Verilog

    Paper Spec

    Spec Verification

    Simulation strategytest bench(s), modes,startups, I/O considerations

    Top-Down Design Methodology

    (INVITED Tutorial)E1-1 Proceedings of the IEEE 2007

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    Program Flow Emphasizes Review at Key Milestones

    Tech. Table Devel

    Model ExtractionDesign Kit

    Analog Design,Schematic Entry

    PDR

    AnalogSimulations

    CompositeSimulation

    CDR

    AnalogLayout

    ParasiticExtraction

    DigitalLayout

    CompSim

    FDR

    PhysicalVerificationDRC, LVS,EM/IR etc.

    FloorPlan

    Partitioning,Interfaces,

    Prelim FloorPlan,

    Testability

    FabProtoTest

    DigitalSimulations

    OR

    Digital Design,Schematic Entry

    Synthesis

    TR

    Customer

    DesignDefinition

    SpecificationDevelopment

    Tech DefinitionFoundry Selection

    Customer Participation

    Customer Participation

    Customer

    FunctionalModel:AMS

    Designer

    DeliverablesDeliverablesDeliverables

    Deliverables

    Deliverables

    CustomerParticipation

    KOR

    RFD

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    Project Management Focused on Clear Communication

    Program Manager Primary point of contact

    Program execution ownership

    Project Communication Plan

    Weekly Meetings Weekly Status Report

    Deliverables

    Action Items

    Open Issues/Risks Agreements

    Project Tracking

    Schedule

    Formal Design Reviews Design Milestone Deliveries

    Steering Committee Meetings

    Rating

    Resp

    Resp

    Project Status - Summary

    Plans for next week

    Key Risks

    Executive Summary

    Key Issues

    Status

    No new actions.

    Actions closed this week (see Actions tab for details)

    New Actions (see Actions tab for details)

    No new agreements

    New Agreements (see Agreements tab for details)

    At a glanceAt a glance weekly status clearly reports onweekly status clearly reports on

    all aspects of the onall aspects of the on--going projectgoing project

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    Cadence Design-ReadyPDKs Increase Productivity

    Additional components to standard baseline foundry PDK Metal resistors for each level of metal with a unique recognition shape

    Metal fingered interconnect capacitor PCells

    Symmetrical center-tapped inductors

    MOS varactor

    Native devices

    Guard ring structures

    Enhanced simulation features Device parameters minimum set to recommended

    Corner models for Parasitic resistors and capacitors

    MOS cells that allow the user to anticipate LOD (STI) effects at schematic level and control theeffect in simulation

    Model and control well proximity effects

    MOS layout-XL multiplier separate from simulation multiplier to enable interdigitation whilesimulating as a single multi-fingered device

    Analog layout capabilities Recommended rules followed in all PDK device layouts

    Minimum area diodes for use as antenna diodes Guard rings that can create multiple contact rows

    Integrated dummy gates on each end of MOS device

    Ability to merge source drains of devices and reflect in callback

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    Cadence Projects Differ from Academic Research

    Project length fixed in the range ~18-26 weeks. Project team expands to complete the design effort in the allotted time.

    Dedicated layout personnel work with the circuit designers to create/completelayout.

    Server resources are sufficient to meet the needs of multiple projects,resources are scheduled appropriately for the project phase.

    The core team has worked together on multiple projects, cooperates well inthe midst of complex and diverse competing projects.

    For the most part, technology objectives for the project, including performance

    requirements and process limitations, are well understood before the designeffort begins.

    The technical approach taken most often involves evolution from an existing,proven approach.

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    13.2 GHz Frequency Synthesizer Macro

    Synthesizer Output from ~11.5 to 13.2 GHz

    66 MHz Reference

    Differential Quadrature I & Q outputs

    Very low phase noise operation

    Jitter < 60 fs rms, integrated from 3.5 MHzto 1 GHz

    Internal Self-Calibrating LC VCO

    Internal regulator for power supply immunity

    Integrated Analog Test Bus

    No external loop filter required

    Power Down Mode

    TSMC 90 nm G Logic Process

    Area ~ 1.2 sq mm

    In Production

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    AFE for Next Generation Wireless Multimedia

    Dual 6-Bit 2.6 GHz ADC Interpolating Flash Architecture

    Dual 6-Bit 2.6 GHz DAC Programmable current source output

    Low Jitter 2.6 GHz PLL LC VCO architecture

    7 to 8 GHz Frequency Synthesizer 4th order, dual path

    Low jitter LC VCO Low Phase Noise Crystal Oscillator

    1:8 and 8:1 data serializer/deserializer

    TSMC 65 nm LP Process

    Multiple versions of this macro delivered

    In Pre-Production

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    900 MHz Zigbee Transceiver RF Macro

    Low IF RX Complex BPF

    Complex CT Delta Sigma ADC (IQ)

    Direct upconversion TX

    Integrated -10 to +14 dBm PA

    Fully integrated synthesizer

    TSMC 180 nm CMOS

    2

    I

    Q

    IQ-ADC

    PGAsComplex Bandpass

    FilterMixer Digital Modem

    4

    Demod

    AGC

    AFC

    Modulation

    Control

    Synthesizer

    refclk_m

    Bias

    Cal

    control

    pgagain

    pga_gain

    bias_rext

    adcclk

    lnagain

    LNA

    gain ctrl

    lna_rf_p

    lna_rf_m

    2

    Mixer

    PA

    Tx pwr ctrl

    io_rf_p

    io_rf_m

    daci

    dacq

    Tx I_DAC

    Tx Q_DAC

    Tx I_LPF

    Tx Q_LPF

    Antennaanttune

    atbaddr

    ATB MUX

    4

    adc_q

    adc_i

    Tx IQ_DAC_LPF

    adc_ref

    _p

    adc_ref

    _m

    atb_

    patb_

    m

    adcclk

    dacclk

    offseti

    offsetqrefclk_p

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    12-bit Bandpass Complex Delta-Sigma ADC

    Application: Zigbee Transceiver

    Topology: Fourth Order Hybrid Delta-SigmaModulator with 4-bit Internal ADC/DAC

    Tunable loop filter

    Integrated ATB test bus

    Specifications: 1 Vpp differential inputs (I/Q)

    IF = 1 MHz

    Bandwidth = 1.2 MHz

    Sampling Rate = 30 MHz SNDR = 72.4 dB

    6.3 mW typical at 1.7 V

    Area of 0.7 sq mm

    TSMC 180 nm CMOS

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    10-bit 12 channel SAR ADC architecture All 12 channels share a master sample

    and hold

    Differential analog input

    ENOB: 8.8 (typ) @500 Msps; 250 MHz

    input rate

    500 MHz maximum sample rate

    Integrated reference

    Integrated offset trim DAC

    Power down modes Integrated analog test bus

    No off-chip components required

    Low power: 62 mW typical

    Area = 0.82 sq mm TSMC 90 nm G process 1.0 V/1.8 V

    First silicon success

    10-bit 500MHz ADC in 90nm

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