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APD, CSP and T-card Characteristics
Toru Sugitate / Hiroshima University
for PHOS FEE Review / PRR Meeting in Wuhan, China
on May 30/31, 2005
PHOS electronics embedded
PHOS signal processing scheme
PbW04 crystal
lead-tungstate crystal (PWO)
Fluorescence decay-time of around 25ns at the operation point; i.e. -25deg.
Inorganic scintillating crystal of 22x22x180 mm3, corresponding to 20X0.
Emission spectrum has blue(420nm) and green(500nm) components.
Light yield of 7-12 pe/MeV for crystals produced in Apatity.
Larger LY as cooling down, but increase slower components.
High QE in blue, low noise and capacitance, and thin photo-sensor, operational at low temperature and in magnetic field is required.
Silicon avalanche photo diode (APD)
Smaller sensitive area, but 3-4 times higher QE than PMT.
Abrupt breakdown at a certain reverse voltage.
NB; data are given at 25 deg.
Gain depends on temp and reverse voltage, and
higher performance as cooling down.
Both the precise temperature and reverse voltage controls are required.
Reality of APD’s(for samples ~ 1800)
Inverse current at M=50
1
10
100
1000
0 5 10 15 20 25 30 35 40 45 50
Inverse current at M=50
num
ber
of
APD
Inverse current (nA) at op. voltage
0 10 20 30 40 50 0
100
200
300
400
500
15 20 25 30
15 20 25 30
num
ber
of
APD
Vop.= 350 - 440VVbreak – Vop.= 20 - 25VIdark peaks at 5nA, and
mostly below 15nA.
Inverse current (nA)voltage difference (V)
Vbreak – Vop.
0
50
100
150
200
250
300 350 400 450 500Bias Voltage (V)
num
bers
break down voltagebias voltage at M=50
num
ber
of
APD
Breakdown voltage and Op. voltage at M=50
300 350 400 450 500inverse voltage (V)
J-FET
Sensitivity
Rise time
Noise (ENC)
Output polarity
Feedback loop Power
dissipation
2SK932 (IDSS rank =23) by SANYO
0.833V/pC
15-20 ns over full range
200 e + 3.2 e /pF x Cin(pF)
Positive
100M // 1pF
64mW (4.2mA @12V & 2.2mA @-6V)
APD: Hamamatsu S8148/S8664-55
APD preamplifier: Originally designed and built at CCNU & Bergen.
Re-designed in 2002 at Hiroshima using components available in Japan.
Hiroshima ver.2 is successfully performed in PHOS256 in 2003/04.
Minor modification for ver.3 in 2004.5,000 of Hiroshima ver.3 has been
produced for the first module.
C5 only for test
100M // 1pF
T-card: 8 CSP outputs into single base connector. Originally built at Bergen in 2003.Re-deigned at Hiroshima in 2005 to;
fit with the new frame design at Sarov, remove a test pulse generator, andremove serial registers R11 to R16 in p
ower lines, since they are on CSP. 10 samples of the new version for testing. Connectors onboard;
MOLEX 53047-0610 AMP 747470-2
Sarov design
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