17
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of [email protected] or [email protected], use [email protected] (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via [email protected]). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

BCP53T series 80 V, 1 A PNP medium power transistors · 2019. 10. 13. · Product profile 1.1 General description PNP medium power transistors in a medium power SOT223 (SC-73)

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Page 1: BCP53T series 80 V, 1 A PNP medium power transistors · 2019. 10. 13. · Product profile 1.1 General description PNP medium power transistors in a medium power SOT223 (SC-73)

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of [email protected] or [email protected], use [email protected] (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via [email protected]). Thank you for your cooperation and understanding,

Kind regards,

Team Nexperia

Page 2: BCP53T series 80 V, 1 A PNP medium power transistors · 2019. 10. 13. · Product profile 1.1 General description PNP medium power transistors in a medium power SOT223 (SC-73)

1. Product profile

1.1 General description

PNP medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

High collector current capability IC and ICM

Three current gain selections

High power dissipation capability

AEC-Q101 qualified

1.3 Applications

Linear voltage regulators

MOSFET drivers

High-side switches

Power management

Amplifiers

1.4 Quick reference data

BCP53T series80 V, 1 A PNP medium power transistorsRev. 1 — 5 July 2016 Product data sheet

SOT223

Table 1. Product overview

Type number Package NPN complement

NXP JEITA JEDEC

BCP53T SOT223 SC-73 - BCP56T

BCP53-10T BCP56-10T

BCP53-16T BCP56-16T

Table 2. Quick reference dataTamb = 25 C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage open base - - 80 V

IC collector current - - 1 A

ICM peak collector current single pulse; tp 1 ms - - 2 A

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NXP Semiconductors BCP53T series80 V, 1 A PNP medium power transistors

[1] Pulse test: tp 300 s; = 0.02

2. Pinning information

3. Ordering information

4. Marking

hFE DC current gain VCE = 2 V; IC = 150 mA [1] 63 - 250

BCP53-10T VCE = 2 V; IC = 150 mA [1] 63 - 160

BCP53-16T VCE = 2 V; IC = 150 mA [1] 100 - 250

Table 2. Quick reference data …continuedTamb = 25 C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Table 3. Pinning

Pin Symbol Description Simplified outline Graphic symbol

1 B base

2 C collector

3 E emitter

4 C collector1 32

4

sym132E

C

B

Table 4. Ordering information

Type number Package

Name Description Version

BCP53T SC-73 plastic surface-mounted package with increased heatsink; 4 leads

SOT223

BCP53-10T

BCP53-16T

Table 5. Marking codes

Type number Marking code

BCP53T BCP53T

BCP53-10T P5310T

BCP53-16T P5316T

BCP53T_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.

Product data sheet Rev. 1 — 5 July 2016 2 of 16

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NXP Semiconductors BCP53T series80 V, 1 A PNP medium power transistors

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm2.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 6 cm2.

[4] Device mounted on an FR4 PCB, 4-layer copper; tin-plated and standard footprint.

[5] Device mounted on an FR4 PCB, 4-layer copper; tin-plated; mounting pad for collector 1 cm2.

Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 100 V

VCEO collector-emitter voltage open base - 80 V

VEBO emitter-base voltage open collector - 5 V

IC collector current - 1 A

ICM peak collector current single pulse; tp 1 ms

- 2 A

IB base current - 0.2 A

IBM peak base current single pulse; tp 1 ms

- 0.3 A

Ptot total power dissipation Tamb 25 C [1] - 0.6 W[2] - 1 W[3] - 1.3 W[4] - 1.3 W[5] - 1.8 W

Tj junction temperature - +150 C

Tamb ambient temperature 55 +150 C

Tstg storage temperature 65 +150 C

BCP53T_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.

Product data sheet Rev. 1 — 5 July 2016 3 of 16

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NXP Semiconductors BCP53T series80 V, 1 A PNP medium power transistors

(1) FR4 PCB, 4-layer copper, 1 cm2

(2) FR4 PCB, single-sided copper, 6 cm2

(3) FR4 PCB, 4-layer copper, standard footprint

(4) FR4 PCB, single-sided copper, 1 cm2

(5) FR4 PCB, single-sided copper, standard footprint

Fig 1. Power derating curves

Unless otherwise specified:

Tamb = 25 C

Single pulse

FR4 PCB, single-sided copper; standard footprint

Fig 2. Safe operating area; junction to ambient; continuous and peak collector currents as a function of collector-emitter voltage

Tamb (°C)-75 -25 25 75 125 175

aaa-0234872

Ptot(W)

0

0.4

0.8

1.2

1.6

(1)

(4)

(5)

(2), (3)

aaa-023488

VCE (V)-10-1 -103-1 -10 -102

-10

IC(A)

-10-3

-10-2

-10-1

-1

DC; FR4 PCB, 4-layer copper;collector mounting pad 1 cm2

DC

tp = 10 µs

100 µs

1 ms

1 s

10 ms100 ms

BCP53T_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.

Product data sheet Rev. 1 — 5 July 2016 4 of 16

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NXP Semiconductors BCP53T series80 V, 1 A PNP medium power transistors

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm2.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 6 cm2.

[4] Device mounted on an FR4 PCB, 4-layer copper; tin-plated and standard footprint.

[5] Device mounted on an FR4 PCB, 4-layer copper; tin-plated; mounting pad for collector 1 cm2.

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 209 K/W[2] - - 125 K/W[3] - - 97 K/W[4] - - 97 K/W[5] - - 70 K/W

Rth(j-sp) thermal resistance from junction to solder point - - 18 K/W

FR4 PCB, single-sided copper, tin-plated and standard footprint

Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

aaa-023489

tp (s)10-5 102 10310110-210-310-4 10-1

103

102

10

Zth(j-a)(K/W)

1

duty cycle = 1

0.020.010

0.05

0.10

0.330.20

0.500.75

BCP53T_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.

Product data sheet Rev. 1 — 5 July 2016 5 of 16

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NXP Semiconductors BCP53T series80 V, 1 A PNP medium power transistors

FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm2

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 6 cm2

Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

aaa-023490

tp (s)10-5 102 10310110-210-310-4 10-1

103

102

10

Zth(j-a)(K/W)

1

0.020.010

duty cycle = 1

0.05

0.10

0.330.20

0.500.75

aaa-023491

tp (s)10-5 102 10310110-210-310-4 10-1

102

Zth(j-a)(K/W)

1

10

0.020.010

duty cycle = 10.75

0.50

0.33

0.20

0.10

0.05

BCP53T_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.

Product data sheet Rev. 1 — 5 July 2016 6 of 16

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NXP Semiconductors BCP53T series80 V, 1 A PNP medium power transistors

FR4 PCB, 4-layer copper, tin-plated and standard footprint.

Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

FR4 PCB, 4-layer copper, tin-plated; mounting pad for collector 1 cm2

Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

aaa-023492

tp (s)10-5 102 10310110-210-310-4 10-1

102

Zth(j-a)(K/W)

1

10

0.020.010

duty cycle = 10.75

0.50

0.33

0.20

0.10

0.05

aaa-023493

tp (s)10-5 102 10310110-210-310-4 10-1

102

Zth(j-a)(K/W)

1

10

0.020.010

duty cycle = 1

0.50

0.33

0.75

0.20

0.10

0.05

BCP53T_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.

Product data sheet Rev. 1 — 5 July 2016 7 of 16

Page 9: BCP53T series 80 V, 1 A PNP medium power transistors · 2019. 10. 13. · Product profile 1.1 General description PNP medium power transistors in a medium power SOT223 (SC-73)

NXP Semiconductors BCP53T series80 V, 1 A PNP medium power transistors

7. Characteristics

[1] Pulse test: tp 300 s; = 0.02

Table 8. CharacteristicsTamb = 25 C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base cut-off current

VCB = 30 V; IE = 0 A - - 100 nA

VCB = 30 V; IE = 0 A; Tj = 150 C

- - 10 A

IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 nA

hFE DC current gain VCE = 2 V; IC = 5 mA 63 - -

VCE = 2 V; IC = 150 mA [1] 63 - 250

VCE = 2 V; IC = 500 mA [1] 40 - -

BCP53-10T VCE = 2 V; IC = 150 mA [1] 63 - 160

BCP53-16T VCE = 2 V; IC = 150 mA [1] 100 - 250

VCEsat collector-emitter saturation voltage

IC = 500 mA; IB = 50 mA [1] - - 500 mV

VBE base-emitter voltage VCE = 2 V; IC = 500 mA [1] - - 1 V

fT transition frequency VCE = 5 V; IC = 50 mA; f = 100 MHz

100 140 - MHz

Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz

- 7 - pF

BCP53T_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.

Product data sheet Rev. 1 — 5 July 2016 8 of 16

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NXP Semiconductors BCP53T series80 V, 1 A PNP medium power transistors

VCE = 2 V

(1) Tamb = 100 C

(2) Tamb = 25 C

(3) Tamb = 55 C

Tamb = 25 C

(1) VCE = 1 V

(2) VCE = 2 V

(3) VCE = 5 V

Fig 8. DC current gain as a function of collector current; typical values

Fig 9. DC current gain as a function of collector current; typical values

Tamb = 25 C VCE = 2 V

(1) Tamb = 55 C

(2) Tamb = 25 C

(3) Tamb = 100 C

Fig 10. Collector current as a function of collector-emitter voltage; typical values

Fig 11. Base-emitter voltage as a function of collector current; typical values

aaa-023494250

hFE

0

IC (mA)-10-1 -104-103-1 -102-10

50

100

150

200

(1)

(2)

(3)

aaa-023495200

hFE

0

IC (mA)-10-1 -104-103-1 -102-10

50

100

150

(1)(2)(3)

VCE (V)0 -5-1 -2 -3 -4

aaa-023496-1

IC(A)

0

-0.2

-0.4

-0.6

-0.8

-13.5IB (mA) = -15

-10.5

-7.5

-4.5

-1.5

-12

-9

-6

-3

aaa-023497-1.2

VBE(V)

0

IC (mA)-10-1 -104-103-1 -102-10

-0.3

-0.6

-0.9(1)

(2)

(3)

BCP53T_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.

Product data sheet Rev. 1 — 5 July 2016 9 of 16

Page 11: BCP53T series 80 V, 1 A PNP medium power transistors · 2019. 10. 13. · Product profile 1.1 General description PNP medium power transistors in a medium power SOT223 (SC-73)

NXP Semiconductors BCP53T series80 V, 1 A PNP medium power transistors

IC/IB = 10

(1) Tamb = 55 C

(2) Tamb = 25 C

(3) Tamb = 100 C

IC/IB = 10

(1) Tamb = 100 C

(2) Tamb = 25 C

(3) Tamb = 55 C

Fig 12. Base-emitter saturation voltage as a function of collector current; typical values

Fig 13. Collector-emitter saturation voltage as a function of collector current; typical values

Tamb = 25 C

(1) IC/IB = 50

(2) IC/IB = 20

(3) IC/IB = 5

f = 1 MHz; Tamb = 25 C

Fig 14. Collector-emitter saturation voltage as a function of collector current; typical values

Fig 15. Collector capacitance as a function of collector-base voltage; typical values

aaa-023498-1.2

VBEsat(V)

0

IC (mA)-10-1 -104-103-1 -102-10

-0.4

-0.8(1)

(2)

(3)

aaa-023499-1

VCESat(V)

-10-2

IC (mA)-10-1 -104-103-1 -102-10

-10-1(1)(2)(3)

aaa-023500-1

VCESat(V)

-10-2

IC (mA)-10-1 -104-103-1 -102-10

-10-1

(1)

(2)

(3)

VCB (V)0 -20 -40 -60 -80 -100

aaa-02350125

CC(pF)

0

5

10

15

20

BCP53T_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.

Product data sheet Rev. 1 — 5 July 2016 10 of 16

Page 12: BCP53T series 80 V, 1 A PNP medium power transistors · 2019. 10. 13. · Product profile 1.1 General description PNP medium power transistors in a medium power SOT223 (SC-73)

NXP Semiconductors BCP53T series80 V, 1 A PNP medium power transistors

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.

9. Package outline

f = 1 MHz; Tamb = 25 C VCE = 5 V;

f = 100 MHz; Tamb = 25 C

Fig 16. Emitter capacitance as a function of emitter-base voltage; typical values

Fig 17. Transition frequency as a function of collector current; typical values

VEB (V)0 -1 -2 -3 -4 -5

aaa-02350270

CE(pF)

0

10

20

30

40

50

60

aaa-023503103

fT(MHz)

10

IC (mA)-10-1 -103-1 -102-10

102

Fig 18. Package outline SOT223 (SC-73)

04-11-10Dimensions in mm

6.76.33.12.9

1.81.5

7.36.7

3.73.3

1.10.7

1 32

4

4.62.3 0.8

0.60.320.22

BCP53T_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.

Product data sheet Rev. 1 — 5 July 2016 11 of 16

Page 13: BCP53T series 80 V, 1 A PNP medium power transistors · 2019. 10. 13. · Product profile 1.1 General description PNP medium power transistors in a medium power SOT223 (SC-73)

NXP Semiconductors BCP53T series80 V, 1 A PNP medium power transistors

10. Soldering

Fig 19. Reflow soldering footprint SOT223 (SC-73)

Fig 20. Wave soldering footprint SOT223 (SC-73)

sot223_fr

1.2(4×)

1.2(3×)

1.3(4×)

1.3(3×)

6.15

7

3.85

3.6

3.5

0.3

3.9 7.65

2.3 2.3

6.1

4

2 31

solder lands

solder resist

occupied area

solder paste

Dimensions in mm

sot223_fw

1.9

6.7

8.9

8.7

1.9(3×)

1.9(2×)1.1

6.2

2.7 2.7

2

4

31

solder lands

solder resist

occupied area

preferred transportdirection during soldering

Dimensions in mm

BCP53T_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.

Product data sheet Rev. 1 — 5 July 2016 12 of 16

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NXP Semiconductors BCP53T series80 V, 1 A PNP medium power transistors

11. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BCP53T_SER v.1 20160705 Product data sheet - -

BCP53T_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.

Product data sheet Rev. 1 — 5 July 2016 13 of 16

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NXP Semiconductors BCP53T series80 V, 1 A PNP medium power transistors

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

12.2 Definitions

Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

12.3 Disclaimers

Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

BCP53T_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.

Product data sheet Rev. 1 — 5 July 2016 14 of 16

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NXP Semiconductors BCP53T series80 V, 1 A PNP medium power transistors

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions.

12.4 TrademarksNotice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: [email protected]

BCP53T_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.

Product data sheet Rev. 1 — 5 July 2016 15 of 16

Page 17: BCP53T series 80 V, 1 A PNP medium power transistors · 2019. 10. 13. · Product profile 1.1 General description PNP medium power transistors in a medium power SOT223 (SC-73)

NXP Semiconductors BCP53T series80 V, 1 A PNP medium power transistors

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 11.1 General description . . . . . . . . . . . . . . . . . . . . . 11.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 11.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 5

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 8

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 118.1 Quality information . . . . . . . . . . . . . . . . . . . . . 11

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 1412.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 1412.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1412.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 1412.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15

13 Contact information. . . . . . . . . . . . . . . . . . . . . 15

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

© NXP Semiconductors N.V. 2016. All rights reserved.

For more information, please visit: http://www.nxp.comFor sales office addresses, please send an email to: [email protected]

Date of release: 5 July 2016

Document identifier: BCP53T_SER

Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.