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C. B. E. Bipolar transistor. BJT – Bipolar Junction Transistor. Dua Type BJT Transistor:. npn. pnp. n. p. n. p. n. p. E. C. E. C. Cross Section. C. Cross Section. C. B. B. B. B. Symbol. Symbol. E. E. Collector doping is usually ~ 10 6 - PowerPoint PPT Presentation
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BB
CC
EE
BJT – Bipolar Junction TransistorBJT – Bipolar Junction Transistor
Dua Type BJT Transistor:Dua Type BJT Transistor:
npnnpn pnppnp
nn pp nnEE
BB
CC pp nn ppEE
BB
CC
Cross SectionCross Section Cross SectionCross Section
BB
CC
EESymbolSymbol
BB
CC
EE
SymbolSymbol
• Collector doping is usually ~ 10Collector doping is usually ~ 1066
• Base doping is slightly higher ~ 10Base doping is slightly higher ~ 1077 – 10 – 1088
• Emitter doping is much higher ~ 10Emitter doping is much higher ~ 101515
Rumusan Dasar BJTRumusan Dasar BJT
BB
CCEEIIEE IICC
IIBB
--
++VVBEBE VVBCBC
++
--
++-- VVCECE
BB
CCEEIIEE IICC
IIBB--
++VVEBEB VVCBCB
++
--
++ --VVECEC
npnnpnIIEE = I = IBB + I + ICC
VVCECE = -V = -VBCBC + V + VBEBE
pnppnpIIEE = I = IBB + I + ICC
VVECEC = V = VEBEB - V - VCBCB
DC DC and DC and DC
= Arus penguatan Common-emitter = Arus penguatan Common-emitter
= Arus penguatan Common-base= Arus penguatan Common-base
= I= ICC = I = ICC
IIBB I IEE
Hubungan antara dua parameters tersebut adalah:Hubungan antara dua parameters tersebut adalah:
= = = =
+ 1+ 1 1 - 1 -
BJT ExampleBJT ExampleKonfigurasi Common-Base Transistor NPNKonfigurasi Common-Base Transistor NPN
++__
++__
Diketahui : IDiketahui : IBB = 50 = 50 A , I A , ICC = 1 mA = 1 mA
Hitung : IHitung : IEE , , , and , and
Penyelesaian:Penyelesaian:
IIEE = I = IBB + I + ICC = 0.05 mA + 1 mA = 1.05 mA = 0.05 mA + 1 mA = 1.05 mA
= I= ICC / I / IBB = 1 mA / 0.05 mA = 20 = 1 mA / 0.05 mA = 20
= I= ICC / I / IEE = 1 mA / 1.05 mA = 0.95238 = 1 mA / 1.05 mA = 0.95238
Juga dapat dicari dengan Juga dapat dicari dengan dengan rumus dengan rumus sebagai berikut.sebagai berikut.
= = = 20 = 0.95238 = 20 = 0.95238 + 1 21+ 1 21
IICC
IIEE
IIBB
VVCBCB
VVBEBE
EE
CC
BB
Curve TransconductanceCurve Transconductance BJT BJT Transistor Tipe NPN Transistor Tipe NPN
VVBEBE
IICC
2 mA2 mA
4 mA4 mA
6 mA6 mA
8 mA8 mA
0.7 V0.7 V
Arus Collector :Arus Collector :
IICC = = I IESES eeVVBEBE//VVTT
Transconductance: Transconductance: (slope of the curve)(slope of the curve)
ggmm = = I ICC / / V VBEBE
IIESES = Arus saturasi terbalik dari = Arus saturasi terbalik dari B-E Junction.B-E Junction.
VVTT = kT/q = 26 mV (@ T=300K) = kT/q = 26 mV (@ T=300K)
= Coefisien emisi= Coefisien emisi
biasanya ~1biasanya ~1
Modes of OperationModes of Operation
• Posisi terbaik pada daerah operasiPosisi terbaik pada daerah operasi
• Beroperasi sebagai penguatBeroperasi sebagai penguatActive:Active:
Saturation:Saturation: • Transistor berada sebagaimana pada posisi short Transistor berada sebagaimana pada posisi short circuit.circuit.
Cutoff:Cutoff: • Arus transistor nolArus transistor nol
• Transistor yang edial sebagaimana posisi saklar Transistor yang edial sebagaimana posisi saklar terbukaterbuka
* Note: There is also a mode of operation * Note: There is also a mode of operation called inverse active, but it is rarely used.called inverse active, but it is rarely used.
TigaTypes dari Bias BJTTigaTypes dari Bias BJT
Bias transistor adalah kondisi tegangan dimana transistor Bias transistor adalah kondisi tegangan dimana transistor tersebut bisa melakukan operasi (kerja).tersebut bisa melakukan operasi (kerja).
Bias Common-Base (CB) :Bias Common-Base (CB) : input input = V= VEBEB & I & IEE
output = Voutput = VCBCB & I & ICC
Bias Common-Emitter (CE):Bias Common-Emitter (CE): input input = V= VBEBE & I & IBB
outputoutput = V= VCECE & I & ICC
Bias Common-Collector (CC):Bias Common-Collector (CC): input input = V= VBCBC & I & IBB
output output = V= VECEC & I & IEE
Common-BaseCommon-BaseAlthough the Common-Base configuration is not the most Although the Common-Base configuration is not the most
common biasing type, it is often helpful in the understanding of common biasing type, it is often helpful in the understanding of how the BJT works. how the BJT works.
Emitter-Current CurvesEmitter-Current Curves
Satu
ratio
n R
egio
nSa
tura
tion
Reg
ion
IIEE
IICC
VVCBCB
Active Active RegionRegion
CutoffCutoffIIEE = 0 = 0
Common-BaseCommon-BaseCircuit Diagram: NPN TransistorCircuit Diagram: NPN Transistor
++ __ ++ __
IICC IIEE
IIBB
VVCBCB VVBEBE
EECC
BB
VVCECE
VVBEBEVVCBCB
Region of Region of OperationOperation IICC VVCECE VVBEBE VVCBCB
C-B C-B BiasBias
E-B E-B BiasBias
ActiveActive IIBB =V=VBEBE+V+VCECE ~0.7V~0.7V 0V0V Rev.Rev. Fwd.Fwd.
SaturationSaturation MaxMax ~0V~0V ~0.7V~0.7V -0.7V<V-0.7V<VCECE<0<0 Fwd.Fwd. Fwd.Fwd.
CutoffCutoff ~0~0 =V=VBEBE+V+VCECE 0V0V 0V0V Rev.Rev. NoneNone/Rev./Rev.
The Table Below lists assumptions The Table Below lists assumptions that can be made for the attributes that can be made for the attributes of the common-base biased circuit of the common-base biased circuit in the different regions of in the different regions of operation. Given for a Silicon NPN operation. Given for a Silicon NPN transistor.transistor.
Common-EmitterCommon-EmitterCircuit DiagramCircuit Diagram
++__
VVCCCC
IICCVVCECE
IIBB
Collector-Current CurvesCollector-Current Curves
VVCECE
IICC
Active Active RegionRegion
IIBB
Saturation RegionSaturation RegionCutoff RegionCutoff Region
IIBB = 0 = 0
Region of Operation
Description
Active Arus basis yang kecil mengontrol arus colektor yang besar
Saturation VCE(sat) ~ 0.2V, VCE increases with IC
Cutoff Pada kondisi IB mendekati 0, edialnya, IC juga sama dengan 0.
Common-CollectorCommon-Collector
Emitter-Current CurvesEmitter-Current Curves
VVCECE
IIEE
Active Active RegionRegion
IIBB
Saturation RegionSaturation RegionCutoff RegionCutoff Region
IIBB = 0 = 0
The Common-The Common-Collector biasing Collector biasing circuit is basically circuit is basically equivalent to the equivalent to the common-emitter common-emitter biased circuit except biased circuit except instead of looking at instead of looking at IICC as a function of V as a function of VCECE and Iand IB B we are looking we are looking at Iat IEE..
Also, since Also, since ~ 1, and ~ 1, and = I = ICC/I/IEE that means that means IICC~I~IEE
Eber-Moll BJT ModelEber-Moll BJT ModelThe Eber-Moll Model for BJTs is fairly complex, but it is The Eber-Moll Model for BJTs is fairly complex, but it is
valid in all regions of BJT operation. The circuit diagram valid in all regions of BJT operation. The circuit diagram below shows all the components of the Eber-Moll Model:below shows all the components of the Eber-Moll Model:
EE CC
BB
IIRRIIFF
IIEE IICC
IIBB
RRIIEERRIICC
Eber-Moll BJT ModelEber-Moll BJT Model
RR = Common-base current gain (in forward active mode) = Common-base current gain (in forward active mode)
FF = Common-base current gain (in inverse active mode) = Common-base current gain (in inverse active mode)
IIESES = Reverse-Saturation Current of B-E Junction = Reverse-Saturation Current of B-E Junction
IICSCS = Reverse-Saturation Current of B-C Junction = Reverse-Saturation Current of B-C Junction
IICC = = FFIIFF – I – IRR IIBB = I = IEE - I - ICC
IIEE = I = IFF - - RRIIRR
IIFF = I = IESES [exp(qV [exp(qVBEBE/kT) – 1]/kT) – 1] IIRR = I = ICC [exp(qV [exp(qVBCBC/kT) – 1]/kT) – 1]
If IIf IESES & I & ICSCS are not given, they can be determined using various are not given, they can be determined using various BJT parameters.BJT parameters.
Small Signal BJT Equivalent CircuitSmall Signal BJT Equivalent CircuitThe small-signal model can be used when the BJT is in the active region. The small-signal model can be used when the BJT is in the active region.
The small-signal active-region model for a CB circuit is shown below:The small-signal active-region model for a CB circuit is shown below:
iiBBrr
iiEE
iiCCiiBB
BB CC
EE
rr = ( = ( + 1) * + 1) * VVTT
IIEE@ @ = 1 and T = 25 = 1 and T = 25CC
rr = ( = ( + 1) * 0.026 + 1) * 0.026 IIEE
Recall:Recall: = I= IC C / I/ IBB
The Early Effect (Early Voltage)The Early Effect (Early Voltage)
VVCECE
IICCNote: Common-Emitter Note: Common-Emitter ConfigurationConfiguration
-V-VAA
IIBB
GreenGreen = Ideal I = Ideal ICC
OrangeOrange = Actual I = Actual ICC (I (ICC’)’)
IICC’ = I’ = ICC V VCECE + 1 + 1
VVAA
Early Effect ExampleEarly Effect Example
Given:Given: The common-emitter circuit below with IThe common-emitter circuit below with IBB = 25 = 25A, A, VVCCCC = 15V, = 15V, = 100 and V = 100 and VAA = 80. = 80.
Find: a) The ideal collector currentFind: a) The ideal collector current
b) The actual collector currentb) The actual collector currentCircuit DiagramCircuit Diagram
++__VVCCCC
IICCVVCECE
IIBB
= 100 = I= 100 = ICC/I/IBB
a)a)
IICC = 100 * I = 100 * IBB = 100 * (25x10 = 100 * (25x10-6-6 A) A)
IICC = 2.5 mA = 2.5 mA
b) Ib) ICC’ = I’ = ICC V VCECE + 1 + 1 = 2.5x10 = 2.5x10-3-3 15 + 1 15 + 1 = 2.96 mA= 2.96 mA
VVAA 80 80
IICC’ = 2.96 mA’ = 2.96 mA
Breakdown VoltageBreakdown VoltageThe maximum voltage that the BJT can withstand.The maximum voltage that the BJT can withstand.
BVBVCEOCEO = =The breakdown voltage for a common-emitter The breakdown voltage for a common-emitter biased circuit. This breakdown voltage usually biased circuit. This breakdown voltage usually ranges from ~20-1000 Volts.ranges from ~20-1000 Volts.
BVBVCBOCBO = = The breakdown voltage for a common-base biased The breakdown voltage for a common-base biased circuit. This breakdown voltage is usually much circuit. This breakdown voltage is usually much higher than BVhigher than BVCEOCEO and has a minimum value of ~60 and has a minimum value of ~60 Volts.Volts.
Breakdown Voltage is Determined By: Breakdown Voltage is Determined By:
• The Base WidthThe Base Width
• Material Being UsedMaterial Being Used
• Doping LevelsDoping Levels
• Biasing VoltageBiasing Voltage
SourcesSources
Dailey, Denton. Dailey, Denton. Electronic Devices and Circuits, Discrete and Integrated.Electronic Devices and Circuits, Discrete and Integrated.
Prentice Hall, New Prentice Hall, New Jersey: 2001. (pp 84-153)Jersey: 2001. (pp 84-153)11 Figure 3.7, Transconductance curve for a typical npn transistor, pg 90. Figure 3.7, Transconductance curve for a typical npn transistor, pg 90.
Liou, J.J. and Yuan, J.S. Liou, J.J. and Yuan, J.S. Semiconductor Device Physics and SimulationSemiconductor Device Physics and Simulation. . Plenum Press, New York: 1998.Plenum Press, New York: 1998.
Neamen, Donald. Neamen, Donald. Semiconductor Physics & Devices. Basic Principles.Semiconductor Physics & Devices. Basic Principles.
McGraw-Hill, Boston: 1997. (pp 351-409)McGraw-Hill, Boston: 1997. (pp 351-409)
Web SitesWeb Sites
http://www.infoplease.com/ce6/sci/A0861609.html