BUK9Y40-55B N-channel TrenchMOS logic level FET · BUK9Y40-55B_3 Product data sheet Rev. 03 — 22 February 2008 3 of 12 Nexperia BUK9Y40-55B N-channel TrenchMOS logic level FET Fig

1. Product profile

1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

1.2 Features

1.3 Applications

1.4 Quick reference data

BUK9Y40-55BN-channel TrenchMOS logic level FETRev. 03 — 22 February 2008 Product data sheet

175 °C rated Logic level compatibleQ101 compliant Very low on-state resistance

12 V and 24 V loads Automotive systemsGeneral purpose power switching Motors, lamps and solenoids

Table 1. Quick referenceSymbol Parameter Conditions Min Typ Max UnitID drain current VGS = 5 V; Tmb = 25 °C;

see Figure 1 and 4- - 26 A

Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 59 W

Static characteristicsRDSon drain-source on-state

resistanceVGS = 5 V; ID = 15 A; Tj = 25 °C; see Figure 12 and 13

- 34 40 mΩ

Avalanche ruggednessEDS(AL)S non-repetitive

drain-source avalanche energy

ID = 26 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped

- - 36 mJ

Nexperia BUK9Y40-55BN-channel TrenchMOS logic level FET

2. Pinning information

3. Ordering information

4. Limiting values

[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.

[2] Repetitive avalanche rating limited by average junction temperature of 170 °C.

[3] Refer to application note AN10273 for further information.

Table 2. PinningPin Symbol Description Simplified outline Graphic symbol1 S source

SOT669 (LFPAK)

2 S source

3 S source

4 G gate

mb D mounting base; connected to drain

mb

1 2 3 4

S

D

G

mbb076

Table 3. Ordering informationType number Package

Name Description VersionBUK9Y40-55B LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669

Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max UnitVDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 55 V

VDGR drain-gate voltage RGS = 20 kΩ - 55 V

VGS gate-source voltage -15 15 V

ID drain current Tmb = 100 °C; VGS = 5 V; see Figure 1 - 18 A

Tmb = 25 °C; VGS = 5 V; see Figure 1 and 4 - 26 A

IDM peak drain current Tmb = 25 °C; tp ≤ 10 μs; pulsed; see Figure 4 - 106 A

Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 59 W

Tstg storage temperature -55 175 °C

Tj junction temperature -55 175 °C

Avalanche ruggednessEDS(AL)S non-repetitive

drain-source avalanche energy

ID = 26 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped

- 36 mJ

EDS(AL)R repetitive drain-source avalanche energy

see Figure 3 [1][2][3]

- - J

Source-drain diodeIS source current Tmb = 25 °C - 26 A

ISM peak source current tp ≤ 10 μs; pulsed; Tmb = 25 °C - 106 A

BUK9Y40-55B_3

Product data sheet Rev. 03 — 22 February 2008 2 of 12

© Nexperia B.V. 2017. All rights reserved


Fig 1. Continuous drain current as a function of mounting base temperature

Fig 2. Normalized total power dissipation as a function of mounting base temperature

Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period

03nn93

0

10

20

30

0 50 100 150 200Tmb (°C)

ID

(A)

Tmb (°C)0 20015050 100

03na19

40

80

120

Pder(%)

0

VGS 5VPder =

Ptot

Ptot(25°C)× 100 %

03np80

tAV (ms)10−3 10110−2 10−1

10−1

1

10

102

IAV(A)

10−2

(1)

(2)

(3)

(1) Single pulse;T j = 25 °C.

(2) Single pulse;T j = 150 °C.

(3) Repetitive.

BUK9Y40-55B_3




5. Thermal characteristics

Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

03nn94

10-1

1

10

102

103

1 10 102VDS (V)

ID

(A)

DC

tp = 10 μs

100 μs

1 ms10 ms100 ms

Limit RDSon = VDS / ID

Tmb = 25 °C; IDM is single pulse

Table 5. Thermal characteristicsSymbol Parameter Conditions Min Typ Max UnitRth(j-mb) thermal resistance

from junction to mounting base

see Figure 5 - - 2.5 K/W

Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration

03nn95

10-2

10-1

1

10

10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s)

Zth (j-mb)

(K/W)

δ = 0.5

0.2

0.1

0.05

single shot

0.02

tpT

P

t

tpT

δ =

BUK9Y40-55B_3




6. Characteristics

Table 6. CharacteristicsSymbol Parameter Conditions Min Typ Max UnitStatic characteristicsV(BR)DSS drain-source

breakdown voltageID = 0.25 mA; VGS = 0 V; Tj = 25 °C

55 - - V

ID = 0.25 mA; VGS = 0 V; Tj = -55 °C

50 - - V

VGS(th) gate-source threshold voltage

ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 11

0.5 - - V

ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 11

1.1 1.5 2 V

ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 11

- - 2.3 V

IDSS drain leakage current VDS = 55 V; VGS = 0 V; Tj = 25 °C - 0.02 1 μA

VDS = 55 V; VGS = 0 V; Tj = 175 °C

- - 500 μA

IGSS gate leakage current VDS = 0 V; VGS = 15 V; Tj = 25 °C - 2 100 nA

VDS = 0 V; VGS = -15 V; Tj = 25 °C

- 2 100 nA

RDSon drain-source on-state resistance

VGS = 5 V; ID = 15 A; Tj = 175 °C; see Figure 12 and 13

- - 84 mΩ

VGS = 10 V; ID = 15 A; Tj = 25 °C - 32 36 mΩ

VGS = 4.5 V; ID = 15 A; Tj = 25 °C - - 45 mΩ

VGS = 5 V; ID = 15 A; Tj = 25 °C; see Figure 12 and 13

- 34 40 mΩ

Source-drain diodeVSD source-drain voltage IS = 20 A; VGS = 0 V; Tj = 25 °C;

see Figure 16- 0.85 1.2 V

trr reverse recovery time IS = 20 A; dIS/dt = -100 A/μs; VGS = -10 V; VDS = 30 V; Tj = 25 °C

- 45 - ns

Qr recovered charge - 25 - nC

Dynamic characteristicsQG(tot) total gate charge ID = 15 A; VDS = 44 V; VGS = 5 V;

Tj = 25 °C; see Figure 14- 11 - nC

QGS gate-source charge - 2 - nC

QGD gate-drain charge - 5 - nC

Ciss input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 15

- 765 1020 pF

Coss output capacitance - 123 148 pF

Crss reverse transfer capacitance

- 71 97 pF

td(on) turn-on delay time VDS = 30 V; RL = 2.2 Ω; VGS = 5 V; RG(ext) = 10 Ω; Tj = 25 °C

- 17 - ns

tr rise time - 93 - ns

td(off) turn-off delay time - 35 - ns

tf fall time - 72 - ns

BUK9Y40-55B_3




Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values

Fig 7. Drain-source on-state resistance as a function of gate-source voltage; typical values

Fig 8. Sub-threshold drain current as a function of gate-source voltage

Fig 9. Forward transconductance as a function of drain current; typical values

VDS (V)0 1084 62

03np10

20

40

60

ID(A)

0

VGS (V) = 106.0

5.0

4.4

4.2

4.0

3.8

3.6

3.4

3.2

3.0

2.82.6

VGS (V)0 15105

03np09

30

40

50

RDSon(mΩ)

20

T j = 25 °C; tp = 300 s T j = 25 °C; ID = 15 A

03ng53

VGS (V)0 321

10−4

10−5

10−2

10−3

10−1

ID(A)

10−6

min typ max

ID (A)0 16124 8

03np07

20

15

25

30

gfs(S)

10

T j = 25 °C;VDS = VGS T j = 25 °C;VDS = 25V

BUK9Y40-55B_3




Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values

Fig 11. Gate-source threshold voltage as a function of junction temperature

Fig 12. Drain-source on-state resistance as a function of drain current; typical values

Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature

VGS (V)0 431 2

03np08

10

5

15

20

ID(A)

0

Tj = 25 °CTj = 175 °C

−60 1801200 60

03ng52

1.0

1.5

0.5

2.0

2.5

VGS(th)(V)

0

Tj (°C)

min

typ

max

VDS = 25V ID = 1 mA;VDS = VGS

ID (A)0 604020

03np11

30

60

90

RDSon(mΩ)

0

VGS (V) = 10

3.0 3.2 3.4 3.6 3.8 5.0

Tj (°C)−60 1801200 60

03nb25

0.8

1.6

2.4

a

0

T j = 25 °Ca =

RDSon

RDSon(25°C)

BUK9Y40-55B_3




Fig 14. Gate-source voltage as a function of gate charge; typical values

Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values

Fig 16. Source current as a function of source-drain voltage; typical values

03np06

QG (nC)0 15105

2

3

1

4

5

VGS(V)

0

VDS = 14 V

VDS = 44 V

03np12

700

350

1050

1400

C(pF)

0

VDS (V)10−1 102101

Ciss

Coss

Crss

T j = 25 °C; ID = 15 A VGS = 0V ; f = 1 M H z

03np05

VSD (V)0 1.51.00.5

40

20

60

80

IS(A)

0

Tj = 175 °C

Tj = 25 °C

VGS = 0V

BUK9Y40-55B_3




7. Package outline

Fig 17. Package outline SOT669 (LFPAK)

REFERENCESOUTLINEVERSION

EUROPEANPROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT669 MO-235 04-10-1306-03-16

0 2.5 5 mm

scale

e

E1

b

c2

A2

A2 b cA eUNIT

DIMENSIONS (mm are the original dimensions)

mm 1.100.95

A3A1

0.150.00

1.201.01

0.500.35

b2

4.413.62

b3

2.22.0

b4

0.90.7

0.250.19

c2

0.300.24

4.103.80

6.25.8

H

1.30.8

L2

0.850.40

L

1.30.8

L1

8°0°

w yD(1)

5.04.8

E(1)

3.33.1

E1(1)D1

(1)

max

0.25 4.20 1.27 0.25 0.1

1 2 3 4

mountingbase

D1

c

Plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669

E

b2

b3

b4

H D

L2

L1

A

Aw M

C

C

X

1/2 e

y C

θ

θ

(A )3

L

A

A1

detail X

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

BUK9Y40-55B_3




8. Revision history

Table 7. Revision historyDocument ID Release date Data sheet status Change notice SupersedesBUK9Y40-55B_3 20080222 Product data sheet - BUK9Y40-55B_2

Modifications: • The format of this data sheet has been redesigned to comply with the new identityguidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

BUK9Y40-55B_2 20060411 Product data sheet - BUK9Y40_55B-01

BUK9Y40_55B-01 20040528 Product data sheet - -

BUK9Y40-55B_3




9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com.

9.2 DefinitionsDraft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

9.3 DisclaimersGeneral — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental

damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.

Terms and conditions of sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Nexperia. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

9.4 TrademarksNotice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

10. Contact information

For additional information, please visit: http://www.nexperia.com

For sales office addresses, send an email to: [email protected]

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

BUK9Y40-55B_3




11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 11.1 General description . . . . . . . . . . . . . . . . . . . . . 11.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 12 Pinning information. . . . . . . . . . . . . . . . . . . . . . 23 Ordering information. . . . . . . . . . . . . . . . . . . . . 24 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 25 Thermal characteristics . . . . . . . . . . . . . . . . . . 46 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 57 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 98 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 109 Legal information. . . . . . . . . . . . . . . . . . . . . . . 119.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 119.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 119.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 119.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 1110 Contact information. . . . . . . . . . . . . . . . . . . . . 1111 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 22 February 2008

Documents

BUK9Y40-55B N-channel TrenchMOS logic level FET · BUK9Y40-55B_3 Product data sheet Rev. 03 — 22 February 2008 3 of 12 Nexperia BUK9Y40-55B N-channel TrenchMOS logic level FET Fig