BYQ28EX

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    Philips Semiconductors Product specificatio

    Rectifier diodes BYQ28F, BYQ28EX seriesultrafast, rugged

    FEATURES SYMBOL QUICK REFERENCE DATA

    Low forward volt drop VR= 150 V/ 200 V Fast switching Soft recovery characteristic VF0.895 V Reverse surge capability High thermal cycling performance IO(AV)= 10 A Isolated mounting tab

    IRRM= 0.2 A

    trr25 ns

    GENERAL DESCRIPTIONDual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode powesupplies.

    The BYQ28F series is supplied in the SOT186 package.The BYQ28EX series is supplied in the SOT186A package.

    PINNING SOT186 SOT186A

    PIN DESCRIPTION

    1 anode 1 (a)

    2 cathode (k)

    3 anode 2 (a)

    tab isolated

    LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).

    SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

    BYQ28F / BYQ28EX -150 -200VRRM Peak repetitive reverse voltage - 150 200 VVRWM Crest working reverse voltage - 150 200 V

    VR Continuous reverse voltage Ths148C - 150 200 VIO(AV) Average rectified output current square wave - 10 A

    (both diodes conducting)1 = 0.5; Ths92 CIFRM Repetitive peak forward current t = 25 s; = 0.5; - 10 A

    per diode Ths92 CIFSM Non-repetitive peak forward t = 10 ms - 50 A

    current per diode t = 8.3 ms - 55 Asinusoidal; with reappliedVRWM(max)

    IRRM Repetitive peak reverse current tp= 2 s; = 0.001 - 0.2 Aper diode

    IRSM Non-repetitive peak reverse tp= 100 s - 0.2 Acurrent per diode

    Tstg Storage temperature -40 150 C

    Tj Operating junction temperature - 150 C

    k

    a1 a21 3

    2

    1 2 3

    case

    1 2 3

    case

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    Philips Semiconductors Product specificatio

    Rectifier diodes BYQ28F, BYQ28EX seriesultrafast, rugged

    ESD LIMITING VALUE

    SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

    VC Electrostatic discharge Human body model; - 8 kVcapacitor voltage C = 250 pF; R = 1.5 k

    ISOLATION LIMITING VALUE & CHARACTERISTICThs= 25 C unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

    Visol Peak isolation voltage from SOT186 package; R.H. 65%; clean and - - 1500 Vall terminals to external dustfreeheatsink

    Visol R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz; - - 2500 Vall terminals to external sinusoidal waveform; R.H. 65%; cleanheatsink and dustfree

    Cisol Capacitance from pin 2 to f = 1 MHz - 10 - pFexternal heatsink

    THERMAL RESISTANCES

    SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

    Rth j-hs Thermal resistance junction to with heatsink compound - - 5.7 K/W

    heatsink without heatsink compound - - 6.7 K/WRth j-a Thermal resistance junction to in free air - 55 - K/Wambient

    ELECTRICAL CHARACTERISTICScharacteristics are per diode at Tj= 25 C unless otherwise stated

    SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

    VF Forward voltage IF= 5 A; Tj= 150C - 0.80 0.895 VIF= 5 A - 0.95 1.10 VIF= 10 A - 1.10 1.25 V

    IR Reverse current VR= VRWM; Tj= 100 C - 0.1 0.2 mAVR= VRWM - 2 10 A

    Qs Reverse recovery charge IF= 2 A; VR30 V; -dIF/dt = 20 A/s - 4 9 nC

    trr1 Reverse recovery time IF= 1 A; VR30 V; - 15 25 ns-dIF/dt = 100 A/strr2 Reverse recovery time IF= 0.5 A to IR= 1 A; Irec= 0.25 A - 10 20 nsIrrm Peak reverse recovery current IF= 5 A; VR30 V; -dIF/dt = 50 A/s - 0.5 0.7 AVfr Forward recovery voltage IF= 1 A; dIF/dt = 10 A/s - 1 - V

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    Philips Semiconductors Product specificatio

    Rectifier diodes BYQ28F, BYQ28EX seriesultrafast, rugged

    Fig.1. Definition of trr1, Qsand Irrm

    Fig.2. Definition of Vfr

    Fig.3. Circuit schematic for trr2

    Fig.4. Definition of trr2

    Fig.5. Maximum forward dissipation PF= f(IF(AV)) perdiode; square current waveform where

    IF(AV)=IF(RMS)x D.

    Fig.6. Maximum forward dissipation PF= f(IF(AV)) perdiode; sinusoidal current waveform where a = form

    Qs

    100%10%

    time

    dI

    dt

    F

    IR

    IF

    Irrm

    trr

    I = 1AR

    recI = 0.25A

    0A

    trr2

    0.5A

    IF

    IR

    time

    time

    V F

    Vfr

    V F

    IF

    0 1 2 3 4 5 6 7 80

    1

    2

    3

    4

    5

    6

    7

    8

    D = 1.0

    0.5

    0.2

    0.1

    BYQ28

    IF(AV) / A

    PF / W Ths(max) / C

    150

    144.3

    138.6

    132.9

    127.2

    121.5

    115.8

    110.1

    104.4

    D =tptp

    T

    T

    t

    I

    Vo = 0.748 V

    Rs = 0.0293 Ohms

    shunt

    Current

    to scope

    D.U.T.

    Voltage Pulse Source

    R

    0 1 2 3 4 5 60

    1

    2

    3

    4

    5

    6

    a = 1.57

    1.92.2

    2.8

    4

    BYQ28

    IF(AV) / A

    PF / W Ths(max) / C

    150

    144.3

    138.6

    132.9

    127.2

    121.5

    115.8Vo = 0.748 V

    Rs = 0.0293 Ohms

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    Philips Semiconductors Product specificatio

    Rectifier diodes BYQ28F, BYQ28EX seriesultrafast, rugged

    Fig.7. Maximum trrat Tj= 25 C; per diode

    Fig.8. Maximum Irrmat Tj= 25 C; per diode

    Fig.9. Typical and maximum forward characteristicIF= f(VF); parameter Tj

    Fig.10. Maximum Qsat Tj= 25 C; per diode

    Fig.11. Transient thermal impedance; per diode;Zth j-hs= f(tp).

    1

    10

    trr / ns

    1 10 100

    1000

    100

    dIF/dt (A/us)

    IF=1A

    IF=5A

    0.1

    1.0

    10

    100Qs / nC

    1.0 10 100-dIF/dt (A/us)

    IF=5A

    IF=2A

    IF=1A

    10

    1

    0.1

    0.01

    Irrm / A

    1 10 100-dIF/dt (A/us)

    IF=5A

    IF=1A

    1us 10us 100us 1ms 10ms 100ms 1s 10s0.001

    0.01

    0.1

    1

    10

    BYQ28F/EXpulse width, tp (s)

    Transient thermal impedance, Zth j-hs (K/W)

    D =tptp

    T

    TP

    t

    D

    0 1

    15

    10

    5

    0

    0.5VF / V

    1.5

    IF / A

    typ max

    Tj=150C

    Tj=25C

    BYQ28

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    Philips Semiconductors Product specificatio

    Rectifier diodes BYQ28F, BYQ28EX seriesultrafast, rugged

    MECHANICAL DATA

    Dimensions in mm

    Net Mass: 2 g

    Fig.12. SOT186; The seating plane is electrically isolated from all terminals.

    Notes1. Refer to mounting instructions for F-pack envelopes.2. Epoxy meets UL94 V0 at 1/8".

    10.2max5.7max

    3.23.0

    0.90.5

    4.4max

    2.9 max

    4.4

    4.0

    seating

    plane

    7.97.5

    17max

    0.55 max

    1.3

    13.5

    min

    2.54

    5.08

    0.90.7

    1 2 3

    M0.4

    top view

    3.5 max

    not tinned4.4

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    Philips Semiconductors Product specificatio

    Rectifier diodes BYQ28F, BYQ28EX seriesultrafast, rugged

    MECHANICAL DATA

    Dimensions in mm

    Net Mass: 2 g

    Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.

    Notes1. Refer to mounting instructions for F-pack envelopes.2. Epoxy meets UL94 V0 at 1/8".

    10.3max

    3.23.0

    4.6max

    2.9 max

    2.8

    seating

    plane

    6.4

    15.8max

    0.6

    2.5

    2.54

    5.08

    1 2 3

    3 max.not tinned

    3

    0.5

    2.5

    0.9

    0.7

    M0.4

    15.8max.

    19max.

    13.5min.

    Recesses (2x)

    2.5

    0.8 max. depth

    1.0 (2x)

    1.3

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    Philips Semiconductors Product specificatio

    Rectifier diodes BYQ28F, BYQ28EX seriesultrafast, rugged

    DEFINITIONS

    Data sheet status

    Objective specification This data sheet contains target or goal specifications for product development.

    Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

    Product specification This data sheet contains final product specifications.

    Limiting values

    Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections of

    this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

    Application information

    Where application information is given, it is advisory and does not form part of the specification.

    Philips Electronics N.V. 1998

    All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright owner.

    The information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property rights.

    LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.

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