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8/12/2019 BYQ28EX
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Philips Semiconductors Product specificatio
Rectifier diodes BYQ28F, BYQ28EX seriesultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA
Low forward volt drop VR= 150 V/ 200 V Fast switching Soft recovery characteristic VF0.895 V Reverse surge capability High thermal cycling performance IO(AV)= 10 A Isolated mounting tab
IRRM= 0.2 A
trr25 ns
GENERAL DESCRIPTIONDual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode powesupplies.
The BYQ28F series is supplied in the SOT186 package.The BYQ28EX series is supplied in the SOT186A package.
PINNING SOT186 SOT186A
PIN DESCRIPTION
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
tab isolated
LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYQ28F / BYQ28EX -150 -200VRRM Peak repetitive reverse voltage - 150 200 VVRWM Crest working reverse voltage - 150 200 V
VR Continuous reverse voltage Ths148C - 150 200 VIO(AV) Average rectified output current square wave - 10 A
(both diodes conducting)1 = 0.5; Ths92 CIFRM Repetitive peak forward current t = 25 s; = 0.5; - 10 A
per diode Ths92 CIFSM Non-repetitive peak forward t = 10 ms - 50 A
current per diode t = 8.3 ms - 55 Asinusoidal; with reappliedVRWM(max)
IRRM Repetitive peak reverse current tp= 2 s; = 0.001 - 0.2 Aper diode
IRSM Non-repetitive peak reverse tp= 100 s - 0.2 Acurrent per diode
Tstg Storage temperature -40 150 C
Tj Operating junction temperature - 150 C
k
a1 a21 3
2
1 2 3
case
1 2 3
case
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Philips Semiconductors Product specificatio
Rectifier diodes BYQ28F, BYQ28EX seriesultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VC Electrostatic discharge Human body model; - 8 kVcapacitor voltage C = 250 pF; R = 1.5 k
ISOLATION LIMITING VALUE & CHARACTERISTICThs= 25 C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol Peak isolation voltage from SOT186 package; R.H. 65%; clean and - - 1500 Vall terminals to external dustfreeheatsink
Visol R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz; - - 2500 Vall terminals to external sinusoidal waveform; R.H. 65%; cleanheatsink and dustfree
Cisol Capacitance from pin 2 to f = 1 MHz - 10 - pFexternal heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-hs Thermal resistance junction to with heatsink compound - - 5.7 K/W
heatsink without heatsink compound - - 6.7 K/WRth j-a Thermal resistance junction to in free air - 55 - K/Wambient
ELECTRICAL CHARACTERISTICScharacteristics are per diode at Tj= 25 C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VF Forward voltage IF= 5 A; Tj= 150C - 0.80 0.895 VIF= 5 A - 0.95 1.10 VIF= 10 A - 1.10 1.25 V
IR Reverse current VR= VRWM; Tj= 100 C - 0.1 0.2 mAVR= VRWM - 2 10 A
Qs Reverse recovery charge IF= 2 A; VR30 V; -dIF/dt = 20 A/s - 4 9 nC
trr1 Reverse recovery time IF= 1 A; VR30 V; - 15 25 ns-dIF/dt = 100 A/strr2 Reverse recovery time IF= 0.5 A to IR= 1 A; Irec= 0.25 A - 10 20 nsIrrm Peak reverse recovery current IF= 5 A; VR30 V; -dIF/dt = 50 A/s - 0.5 0.7 AVfr Forward recovery voltage IF= 1 A; dIF/dt = 10 A/s - 1 - V
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Philips Semiconductors Product specificatio
Rectifier diodes BYQ28F, BYQ28EX seriesultrafast, rugged
Fig.1. Definition of trr1, Qsand Irrm
Fig.2. Definition of Vfr
Fig.3. Circuit schematic for trr2
Fig.4. Definition of trr2
Fig.5. Maximum forward dissipation PF= f(IF(AV)) perdiode; square current waveform where
IF(AV)=IF(RMS)x D.
Fig.6. Maximum forward dissipation PF= f(IF(AV)) perdiode; sinusoidal current waveform where a = form
Qs
100%10%
time
dI
dt
F
IR
IF
Irrm
trr
I = 1AR
recI = 0.25A
0A
trr2
0.5A
IF
IR
time
time
V F
Vfr
V F
IF
0 1 2 3 4 5 6 7 80
1
2
3
4
5
6
7
8
D = 1.0
0.5
0.2
0.1
BYQ28
IF(AV) / A
PF / W Ths(max) / C
150
144.3
138.6
132.9
127.2
121.5
115.8
110.1
104.4
D =tptp
T
T
t
I
Vo = 0.748 V
Rs = 0.0293 Ohms
shunt
Current
to scope
D.U.T.
Voltage Pulse Source
R
0 1 2 3 4 5 60
1
2
3
4
5
6
a = 1.57
1.92.2
2.8
4
BYQ28
IF(AV) / A
PF / W Ths(max) / C
150
144.3
138.6
132.9
127.2
121.5
115.8Vo = 0.748 V
Rs = 0.0293 Ohms
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Philips Semiconductors Product specificatio
Rectifier diodes BYQ28F, BYQ28EX seriesultrafast, rugged
Fig.7. Maximum trrat Tj= 25 C; per diode
Fig.8. Maximum Irrmat Tj= 25 C; per diode
Fig.9. Typical and maximum forward characteristicIF= f(VF); parameter Tj
Fig.10. Maximum Qsat Tj= 25 C; per diode
Fig.11. Transient thermal impedance; per diode;Zth j-hs= f(tp).
1
10
trr / ns
1 10 100
1000
100
dIF/dt (A/us)
IF=1A
IF=5A
0.1
1.0
10
100Qs / nC
1.0 10 100-dIF/dt (A/us)
IF=5A
IF=2A
IF=1A
10
1
0.1
0.01
Irrm / A
1 10 100-dIF/dt (A/us)
IF=5A
IF=1A
1us 10us 100us 1ms 10ms 100ms 1s 10s0.001
0.01
0.1
1
10
BYQ28F/EXpulse width, tp (s)
Transient thermal impedance, Zth j-hs (K/W)
D =tptp
T
TP
t
D
0 1
15
10
5
0
0.5VF / V
1.5
IF / A
typ max
Tj=150C
Tj=25C
BYQ28
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Philips Semiconductors Product specificatio
Rectifier diodes BYQ28F, BYQ28EX seriesultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.12. SOT186; The seating plane is electrically isolated from all terminals.
Notes1. Refer to mounting instructions for F-pack envelopes.2. Epoxy meets UL94 V0 at 1/8".
10.2max5.7max
3.23.0
0.90.5
4.4max
2.9 max
4.4
4.0
seating
plane
7.97.5
17max
0.55 max
1.3
13.5
min
2.54
5.08
0.90.7
1 2 3
M0.4
top view
3.5 max
not tinned4.4
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Philips Semiconductors Product specificatio
Rectifier diodes BYQ28F, BYQ28EX seriesultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes1. Refer to mounting instructions for F-pack envelopes.2. Epoxy meets UL94 V0 at 1/8".
10.3max
3.23.0
4.6max
2.9 max
2.8
seating
plane
6.4
15.8max
0.6
2.5
2.54
5.08
1 2 3
3 max.not tinned
3
0.5
2.5
0.9
0.7
M0.4
15.8max.
19max.
13.5min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
1.3
8/12/2019 BYQ28EX
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Philips Semiconductors Product specificatio
Rectifier diodes BYQ28F, BYQ28EX seriesultrafast, rugged
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property rights.
LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.
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