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Characterization of a Single Metal Impurity in Graphene Eric Cockayne Ceramics Division, NIST, Gaithersburg Gregory M. Rutter Joseph A. Stroscio Center for Nanoscale Science & Technology, NIST. Castro-Neto, Nature Mater. 6, 176 (2007). Castro-Neto et al., Physics World (2006). Graphene: - PowerPoint PPT Presentation
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Characterization of a Single Metal Impurity in Graphene
Eric Cockayne Ceramics Division, NIST, Gaithersburg
Gregory M. RutterJoseph A. Stroscio
Center for Nanoscale Science & Technology, NIST
Castro-Neto et al., Physics World (2006)
Castro-Neto, Nature Mater. 6, 176 (2007).
Graphene: Unusual electronic structure;promising candidate for applications
Microelectronics: high carrier mobility → high speed devices
Resistance standard → unusual quantum Hall effect
Large scale graphene growth:Several techniques; this talk: thermaldesorption of Si from SiC surface
Thermal desorption of Si from SiC:large area graphene, but defects frequently observed
Goal: elucidate nature of defectswith the ultimate aim of reducing oreliminating the defects
In particular, will focus in pseudo-six folddefect very commonly observed
Properties of defect found in STM images:
Near sixfold symmetry; actually threefold Sqrt(3) modulation of graphene lattice Diameter of strong modulation ~ 2 to 3 nm Center of defect is dark Dark spokes observed.
Appearance of defect very similar in variousexperiments (Rutter et al., Science 317, 219 (2007);Guisinger et al., J. Vac. Sci. Techn A 26, 932 (2008);Simone et al., Eur. Phys. J. B 69, 351 (2009))
dI/dV plot ~ local density of states sharply peaked in energy,about 0.5 eV above the Dirac point
Energy/distance breakdown of “pinwheel” defect
Ab initio electronic structure
VASP used DFT, ultrasoft pseudopotentials212 eV plane wave cutoff324 and 432 C-atom bilayer supercells + 1 defect8748 k points per BZ of primitive cell
STM topograph simulations
Tersoff & Hamann approximation (Phys. Rev. B 31, 805 (1985)): tunneling current proportional to local density of states between Fermi level and bias VConvert constant current -> constant integrated DOS; plot height vs. position
Tight binding electronic structure
Mo d levels and C 2pz levels put into modelTight binding parameters determined via least squares fitting to ab initio data~150000 k points in BZ of primitive supercell needed for converged DOS plotsUp to 3888 atoms in bilayer supercell investigated
Methods: ab initio & tight binding
Based on pseudosixfold nature of defect and fact that it is onlyobserved in graphene bilayers/multilayers, hypothesize thatdefect is on axis of the center of a hexagon in the topmost layerof Bernal stacked graphene
Adatom Intercalation Substitution
Defect atom can be anything: focus on Mo and Si
Best fit: intercalated Mo
Graphene layers remain nearly flat (h < 0.25 A) for intercalated Mo
Magnetism?Mo position Magnetic moment M(B)
isolated atom 6.0adatom 0.0intercalated 0.0substitution 2.0 c/w M = 2.0 for Cr substitution in monolayer (Krasheninnikov et al., PRL 102, 126807 (2009); Santos et al,arXiv:0910.0400)
324 C + 1 Mo: DOS shows three defect-associated peaks near EDirac
STM images vs. bias
Tersoff and Hamann approximation: I ~ local DOS integrated from EF to E
Experiment
DFT simulationsqrt(3) modulationmore sensitive to bias voltage than expt.central contrast dark for + bias
Ebias = -0.3 eV Ebias = +0.3 eV
Plots a-g show, inorder of increasingenergy, the zone centerstates near EDirac withsignificant Mo d participation
State E-EDirac mult. a -0.57 2 b -0.49 1 c -0.17 2 d +0.02 2 e +0.20 1 f +0.33 2 g +0.88 2
Range of E ~ 1.5 eVBright center: singlet; m = 0; dark center; doublet; m nonzero
Can individual state(s) be identified that match experimental STM images?
BilayerTrilayer
Simulated STM images
Images for equivalent defect state nearly identical:Effect of intercalated Mo atom is confined to nearby layersSuggests effect of substrate is small.
Tight binding model
Include only C 2pz & Mo 4d orbitals
Intralayer C-C coupling to 2nd neighbors;
interlayer coupling for “stacked” atoms
Mo-C coupling terms to 10 neighborsshown
Parameters found by least square fittingto ab initio data
C-C results similar to those in literature
Variance of C-C interations essential:For these terms:
A = Aideal + B(d – dideal); where A, Bfit to each C-C interaction parameter;guarantees correct results reproduced forideal graphene
For larger supercells, graphene distortedaround Mo as in ab initio results; rest ofstructure “padded” with ideal graphene.
Effect of stacked (gap) vs. unstacked (gapless) C sublattices seen in ideal bilayer DOSThree strong defect peaks of ab initio calculations reproduced
Low energy peak remains nearly constant as system gets largerHigh energy peaks: large changes; not convergedOscillations: real or artifact of sharp distorted/undistorted boundary in model?
-0.2 0.8
-1.5 1.5 -1.5 1.5
E- EDirac (eV)
+2nm
0
-2nm
Simulation Expt. Simulation; normalized
Energy/distance DOS: Simulation vs. Expt.
Conclusions (as of 3/31/10)
Most positive result: For intercalated Mo, states withenergy around EDirac + 0.9 eV reproducemost results of experiments
Most intriguing result:Simulated energy-distanceplot for interstitial showssqrt(3) modulation betweensharp bounds in energy
Biggest remaining puzzles:Why don’t fine details in STMsimulations (e.g. dark spokes) agree with experiment?
Why isn’t the positive energydefect peak as distinct as itseems experimentally?
Top priorities:Extend expt. measurements tocover entire energy range of interestExtend TB model to predict STM imagesIf necessary, vary paramters in TBmodel to account for possible DFTerrors
Working hypothesis:experimental “pinwheel”defect is due to intercalatedmetal ion
“New” defect: rotated central region(J. Meyer, Ulm, MRS Spring meeting 2010)
6 pentagons + 6 heptagonsE = +7.1 eV
c/w Stone-Wales defect2 pentagons + 2 heptagonsE = + 4.2 eV
Vacancy (unreconstructed) E = +10.0 eV
Other defects? Stone-Wales; vacancy?
Conclusions (as of 4/27/10)
Most positive result: For intercalated Mo, states withenergy around EDirac + 0.9 eV reproducemost results of experiments
Most intriguing result:Simulated energy-distanceplot for interstitial showssqrt(3) modulation betweensharp bounds in energy
Biggest remaining puzzles:Why don’t fine details in STMsimulations (e.g. dark spokes) agree with experiment?
Why isn’t the positive energydefect peak as distinct as itseems experimentally?
Top priorities:Extend expt. measurements tocover entire energy range of interestExtend TB model to predict STM imagesIf necessary, vary paramters in TBmodel to account for possible DFTerrors
Working hypothesis:pinwheel defect is dueto rotational grain boundary type defect