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APS 4CS New Mexico Institute of Mining and Technology Socorro, NM October 26-27, 2012. Characterizing InGaAs quantum dot chains. Tyler Park John Colton Jeff Farrer Ken Clark David Meyer Scott Thalman Haeyeon Yang. Outline. Quantum dot (QD) overview - PowerPoint PPT Presentation
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Characterizing Characterizing InGaAs quantum InGaAs quantum
dot chains dot chains Tyler ParkTyler Park John Colton John Colton Jeff FarrerJeff Farrer Ken Clark Ken Clark
David MeyerDavid Meyer Scott Scott ThalmanThalman
Haeyeon YangHaeyeon Yang
APS 4CS New Mexico Institute of Mining and Technology Socorro, NM October 26-27, 2012
OutlineOutline Quantum dot (QD) overviewQuantum dot (QD) overview
Quantum dot growthQuantum dot growth
Photoluminescence (PL) Photoluminescence (PL) spectroscopyspectroscopy
Transmission electron microscopyTransmission electron microscopy
ResultsResults
Quantum Dots OverviewQuantum Dots Overview QD QD
OverviewOverview
QD GrowthQD Growth
PL PL SpectroscopySpectroscopy
TEMTEM
ResultsResults • Charge carriers constrained in 3 dimensions• Quantum well constrained in 1 dimension, quantum wires constrained in 2
• Many uses: optoelectronics, detectors, lasers, quantum computing…
Quantum Dots OverviewQuantum Dots Overview QD OverviewQD Overview
QD GrowthQD Growth
PL SpectroscopyPL Spectroscopy
TEMTEM
ResultsResults(photon)
he-
• Excite electrons across bandgapExcite electrons across bandgap
• “ “Trap” electrons in well/QD until Trap” electrons in well/QD until they relaxthey relax
• Released photons correspond to Released photons correspond to bandgap energybandgap energy
Quantum Dots OverviewQuantum Dots Overview QD QD
OverviewOverview
QD GrowthQD Growth
PL PL SpectroscopySpectroscopy
TEMTEM
ResultsResults
Dong Jun Kim and Haeyon Yang,Nanotechnology,(2008).
Zh. M. Wang, et al.,Journal of Applied Physics, (2006).
110
Quantum Dot GrowthQuantum Dot Growth QD OverviewQD Overview
QD GrowthQD Growth
PL PL SpectroscopySpectroscopy
TEMTEM
ResultsResults
InGaAs
• Modified Stranski-Krastanov technique• QD layer grown at a cooler temperature• Annealing process, during which QDs form• Capping layer for electronic/optical uses
Photoluminescence Photoluminescence SpectroscopySpectroscopy
QD OverviewQD Overview
QD GrowthQD Growth
PL PL SpectroscopySpectroscopy
TEMTEM
ResultsResultsDetector
Lenses
Monochromator
Lock-in Amplifie
r
Laser Chopper
Cryostat
Sample
Photoluminescence Photoluminescence SpectroscopySpectroscopy
QD OverviewQD Overview
QD GrowthQD Growth
PL PL SpectroscopySpectroscopy
TEMTEM
ResultsResults
capped, annealed at 460C capped, annealed at460C, 480C, and 500C
Transmission Electron Transmission Electron MicroscopyMicroscopy
QD OverviewQD Overview
QD GrowthQD Growth
PL PL SpectroscopySpectroscopy
TEMTEM
ResultsResults
• Preparation:
Scanning electron microscope (SEM) / Focused Ion Beam (FIB)
Mechanical thinning
Transmission Electron Transmission Electron MicroscopyMicroscopy
QD OverviewQD Overview
QD GrowthQD Growth
PL PL SpectroscopySpectroscopy
TEMTEM
ResultsResults
• Cross-sectional and plan view cuts• Analytical transmission electron microscopy
(chemical analysis)• Partial electron energy-loss spectroscopy (PEELS)• X-ray energy dispersive spectroscopy
(XEDS)
Transmission Electron Transmission Electron MicroscopyMicroscopy
QD OverviewQD Overview
QD GrowthQD Growth
PL PL SpectroscopySpectroscopy
TEMTEM
ResultsResults
Transmission Electron Transmission Electron MicroscopyMicroscopy
QD OverviewQD Overview
QD GrowthQD Growth
PL PL SpectroscopySpectroscopy
TEMTEM
ResultsResults
Results and ConclusionResults and Conclusion QD OverviewQD Overview
QD GrowthQD Growth
PL PL SpectroscopySpectroscopy
TEMTEM
ResultsResults
• Obtained optical and physical information about the quantum dot chains• Found the effect of the capping layer in the quantum dot samples• Investigating quantum dot chain samples with slightly different growth properties• Working with different methods to obtain plan view cuts
Special thanks to: Felipe Rivera, Thomas McConkie, and Richard Vanfleet