4 CONDUCTION PHENOMENA IN DIELECTRIC SOLIDS

Markus Zahn Department of Electrical Engineering

University of Florida Gainesville, Florida 32611

INTRODUCTION

Most of the references listed here were obtained using a computer literature search for all papers pub­lished in 1976 related to the primary key words of di­electric and electrical conductivity properties of solids. The majority of conduction related search fell into the broad categories of glasses, crystals, ferro­electrics, semiconductors, and polymers. Much of the work is performed with thin films.

Measurements used natural conduction as well as induced conduction due to irradiation of the dielectric with electrons, light, and nuclear particles. Applied excitations range from dc to power frequency through microwave and light frequencies and beyond. Throughout this large frequency range dielectric properties were measured as a function of temperature, pressure, geome­try, and impurities.

BOOKS, REVIEWS, AND CONFERENCE PROCEEDINGS

Books

Studies of charge storage and transport phenomena in electrets by measurement of the heat accelerated decay of electret charges is completely treated in J. van Turnhout's book on thermally stimulated discharge of polymer electrets (1). The text gives equal treatment to both theory and experiment.

Reviews

Goodings reviewed conductivity and superconductivity

206

BOOKS, REVIEWS, AND CONFERENCE PROCEEDINGS

in polymers (2). He considers the two charge transport mechanisms of band and hopping conduction and concludes that it is the molecular nature of organic solids which dictate their electrical properties.

207

The mixed alkali effect in glass was reviewed, where changes in glass properties are due to the addition of a second alkali oxide (3). Another review describes ther­mally induced atomic motions in dielectric glasses below 1° K as well as other large effects in certain amorphous polymers (4). Infrared spectroscopic studies of vapor deposited dielectric glass films on silicon was also reviewed (5).

Bulk and interfacial responses including dipolar and hopping charge contributions and the effects of depletion and injection barriers was reviewed with examples for SiD, chalcogenide films, stearic acid, electrolytic capacitors, and ceramics (6). It is shown that bulk properties may be characterized by two types of dielec­tric response:Debye-like,giving relatively sharp loss peaks in frequency,and a much broader response which is called "universal dielectric response" found in a wide range of materials regardless of their physical and chem­ical nature. Both types may be caused by either dipolar or hopping charge phenomena.

A review of the electrical properties measured in electrochemically formed non-metallic deposits of insu­lating oxides considered electronic and ionic conductiv­ities, dielectric constants, impedance characteristics, leakage currents, rectification, and electrical break­down (7).

A review also appeared relating dielectric proper­ties to the non-relativistic electrodynamic theory (8). A general formulation of coupled electromagnetic-mechan­ical effects in solids and/or fluids used the principle of virtual power.

Conferences

The IEEE International Symposium on Electrical Insulation met for the first time in Montreal. Topics related to conduction in solids included aging (9), treeing (10-13), effects of various excitations (14), and photoelectric effects (15).

The Electrochemical Society Spring meeting (16) in­cluded conduction related topics on semiconductors and dielectric materials. The Third European Meeting on Ferroelectricity (17) also had many papers on dielectric

208 CONDUCTION PHENOMENA IN DIELECTRIC SOLIDS

conduction properties. In addition to the yearly Conference on Electrical

Insulation and Dielectric Phenomena the 1975 lEE Confer­ence on Dielectric Materials, Measurements, and Applica­tions (18) and the International High Voltage Symposium (19) had many papers related to solid conduction. Many of the papers presented at the Fifth International Con­ference on Conduction and Breakdown in Dielectric Liquids (20) are also appropriate for solids.

THEORETICAL WORK

Drift dominated conduction models are often used where the charge transport is described by the mobility of the charge carriers. New work used this model to ex­tend past parallel plane geometry analysis to concentric cylindrical and spherical electrodes (21). Gupta and van Overstraeten (22) developed a theory of isothermal di­electric relaxation to determine various trap parameters in a metal-insulator-metal structure.

Other conduction models considered a cubic lattice (23) and an analysis of the local electric field inside an ellipsoidal cavity embedded in an amorphous dielectric (24). The results are used to evaluate the permittivity of dielectrics composed of anisotropic polar molecules. An approximate method also calculates the dielectric constant and electric field in a two component matrix containing spherical inclusions (25). A classical model is developed to show that the work function of insulating solid particles or liquid droplets depends upon their size and dielectric constant (26). Applications of this work to triboelectric charging and electrification of sprays is discussed. Dielectric screening in one dimen­sional disordered systems is calculated using a random­phase approximation (27).

Other work also considered the connections between dielectric and electrodynamic theory (8, 28). A new Monte-Carlo approach considered the simulation of elec­tron penetration in solids (29) for a series of random scattering events.

GLASSES

The dielectric permittivity was measured in Fe2 03 -PbO - Si02 systems (30), molybdenum phosphate glasses (31), and in phosphate glasses containing MnO and Fe2 03

CRYSTALLINE PROPERTIES 209

(32). A space charge model was developed to characterize the structure of glass surfaces and to relate this struc­ture to dielectric measurements (33).

Electric conduction and dielectric relaxation mea­surements investigated ionic and electronic diffusion processes in oxide glasses (34). Many electrical and mechanical properties of glass-ceramics were investigated as a function of crystallization heat-treatment tempera­ture (35). It was shown that several properties are dependent on microstructure effects.

The mechanism of current transfer in metal-dielec­tric-metal systems based on vanadium-phosphate glasses was investigated by measurements of the current-voltage curves (36).

CRYSTALLINE PROPERTIES

Ice is a popular material for dielectric measure­ments. The low frequency permittivity was measured be­tween 128 and 301 0 K at a pressure of 9 K bar and was shown to follow a Curie-Weiss law (37). The relaxation time varied through ten orders of magnitude over this temperature range and followed an Arrhenius law with a constant activation energy of 10.9 K cal/mole. Permit­tivity and loss measurements were also made from 0.5-100 Mhz at temperatures from 243-273° K (38). Predictions based on the known decrease in frequency of lattice vibrations with increasing temperature yields values of the limiting high frequency permittivity much higher than those measured. This suggests that the absorptivity at these frequencies should decrease with increasing temper­ature. Measurements of the permittivity and loss of polycrystalline 98.75 percent D20 ice were also made from 77-274 0 K over the frequency range 10-2 - 5 x 107 Hz (39). The isothermal decay of the stored charge was measured by a transient current method. A conventional dielectric bridge made dielectric dispersion measurements of ice single crystals doped with KF (40). The dielec­tric properties of ice were also measured as a function of added salt concentrations from changes in the relax­ation activation energy (41). A model based on the existence of an ice microstructure was proposed (42) which supports many dielectric properties measured.

The dielectric properties of alkali halide and alkaline earth oxide crystals are explained by a theory based on the shell model and exchange charge interactions

210 CONDUCTION PHENOMENA IN DIELECTRIC SOLIDS

(43). It is concluded that the second neighbor short range forces have significant magnitudes in alkaline earth oxides. The dielectric anisotropy of asbestos sheets which behave electrically as single axis crystals were also studied (44).

Electric polarization is calculated for molecular crystals taking into account the deformation of molecules under elastic movement of a crystal (45). The decay characteristics of corona charged crystals of NaCl, CaF2 , sintered A12 03' bakelized paper and epoxy resin are pre­sented (46). At the end of the decay most charges are conserved in the crystal at the grounded electrode side and by turning the crystal over again a further decay can be initiated. The mobilities of several dielectrics are summarized and a relationship between relative decay rates of positive and negative charges and triboelectric charge is found.

Some laws governing the charging of dielectrics by low-energy electrons are discussed (47). Measurements are reported of surface charge as a function of electron energy. irradiation time. and annealing temperatures for the charge development in single crystal LiF. NaCl. and CaF2 when exposed in vacuum to an electron beam. The complete dielectric tensor of pyrene single crystals has been measured at 298 0 K for frequencies of 100 KHz and 1 MHz (48). The results are used to calculate the effec­tive molecular polarizability and the local electric field with the molecules treated either individually or as dimer pairs.

Thermodynamic properties are evaluated for a system of randomly distributed dipoles in a nonpolar medium considering only dipole-dipole interactions (49). The analysis is appropriate for OH- impurities dissolved in KCl crystals. The dielectric function is found to scale with the ratio of temperature to the concentration.

Polarization ratios for the narrow absorption bands are measured in natural clear and synthetic quartz. citrine. and amethyst (50). Effects of hydrostatic pressure on the phase transition temperatures and sponta­neous polarization of thiourea monocrystals are studied (51) .

Because of the relationship between the electronic polarizability of an ion and its radius. the polariz­ability of the ion in a crystal is different from that in the free state. A calculation of this effect for cations in rutile crystals reveals that the polarizabilities were

CRYSTALLINE PROPERTIES 211

nearly 2 or 3 times larger in the crystal than the corre­sponding free ion values (52).

The electromechanical properties of lithium germanate crystals were measured at room temperature (53). The far IR reflectivity spectrum was measured of the layer crystal PbI2 for the in plane polarization (54) .

Using various models, calculations relating the di­electric, elastic, and piezoelectric constants were made (55). Dielectric breakdown strengths were correlated to basic parameters in ionic crystals (56).

Changes in the polarization energy due to the pres­ence of structural defects in a model molecular crystal and in anthracene were calculated (57) and considered as a source of traps for current carriers.

The static dielectric constant of a KCl single crys­tal is treated in the range from nearly 0° K to 830° K (58) .

Dielectric and conduction properties were measured in PbTi0 3 grown from the melt (59), metastable and stable solid phase modifications of p-methoxy-benzylidene p-n­butyl aniline (MBBA) (60), InSb in the rf range around room temperature (61), single crystal alumina (62), KCl + Pb2 crystals (63), ammonium perchlorate doped with chromate ions (64), scandium oxide single crystals (65), thiourea single crystals at microwave frequencies between 8.25 and 75.0 GHz (66), Cd Hgl - x Te mixed crystals at 8° K in the far infrared s~ectral region (67), alkaline earth doped KCl and NaCl crystals containing Z centers (68), crystalline TTF-TCNQ (69), 2-propanol-water crystal (70), BiNb04 and BiTa04 single crystals (71), and Hf0 2-0.lY203 and Zr02-0.lY203 crystals from 100-800°C and over 102 - 2 x 108 Hz (72). It is suggested that the dielec­tric properties are governed by the motion of charged oxygen vacancies.

Theory and experiment were shown to agree for the phase transition in layered hydrogen bonded crystals which depends strongly on the specifics of the local hydrogen bonding (73). Dielectric and nuclear spin lattice relaxation measurrnents were made in layered SnC12·2H20 crystals around the phase transition temperature (74). Simulation of processes in heavy charged particle tracks were done by pulsed irradiation of solids with high density electron beams (75). A method was developed to distinguish various crystal structures by their dielectric constants (76). The

212 CONDUCTION PHENOMENA IN DIELECTRIC SOLIDS

components of the permittivity tensor on the main elec­trical direction in gypsum crystals were measured (77). A direct proportionality between the dielectric anisotro­py and the anisotropy of the density was found. Acoustic -dielectric effects were investigated in a nematic liquid crystal (78). The dielectric constant and loss tangent change with ultrasound intensity.

FERROELECTRICS

The effect of oxide additives on the dielectric constant of ferroelectric ceramics at 1010 Hz were mea­sured and a model for the ferroelectric phase transition was proposed (7~. The possibility of thin ferroelectric films with field dependent capacitance was investigated (81). The changes in the piezoelectric properties of PZT ceramics by the addition of Mn02 and W0 3 impurities were made (82). The influence of hydrostatlc pressure on the polarization processes in SbSi was studied by means of the Barkhausen effect (83). In an electric field an increase of pressure reduced the macroscopic polarization but changed the domain structure. For short circuited samples any change of pressure always depolar­ized the sample. The dielectric properties of solid solutions of various strontium compounds were made at low temperatures and high pressures (84).

The temperature stability of the dielectric proper­ties of lead zirconate-titanate piezoceramics were made (85). For a ferroelectric film with the polarization perpendicular to the surfaces it was demonstrated that the ferroelectric film is stable is the discontinuity in polarization is compensated by free charge (86).

TGS had an anomalous temperature dependence of the nonlinear dielectric coefficients (87). A model calcula­tion is given to explain the deviation from normal behavior.

Dielectric studies were made on lead zirconate crys­tals (88), sodium niobate from 293 0 K to 10 0 K (89), phase transitions in triglycine selenate-deuterated­triglycine selenate systems (90), Mg-Cl boracite (91), various lead compounds (92), pressure and temperature dependence in PbS Ge 3 0Il (93), nonlinear behavior in various barium compounds (94), microwave dispersion in triglycine sulphate (95), in various lead and potassium compounds (96), thin films of BaTi03 on doped silicon (97), temperature and pressure dependences of PbF2 and alkaline earth fluorides (98), on the antiferroelectric cupric formate tetrahydrate under high pressure (99), on

SEMICONDUCTORS 213

various lead, potassium, and barium compounds at low temperature (100), microwave nonlinearities of SbSi (101), orthorhombic KNb03 (102), lead compounds (103), inorganic salts under high pressure by liquid-solid hy­brid systems (104), in rubidium compounds (105), in the PbHP04 family (106), in solid solutions of deuterated ammonium rochelle salt (107), infra-low frequency disper­sion in lead titanate (108), phase transition effects in triglycine selenate at high pressures (109), and in perovskite ceramicPZT-4 (110).

Thin PLZT films were fabricated by RF sputtering (Ill). The dielectric properties depended strongly on the crystal structure. The effect of illumination on the temperature dependence of the transverse conductance in the screening layer of the spontaneous polarization of needle shaped SbSi crystals was investigated under op­posed polarization conditions (112). Measurements re­vealed the influence of domain walls and showed that opposed domains could form spontaneously in ferroelectric semiconductors.

The Gibbs energy function was calculated for anti­ferroelectric transistions under hydrostatic pressure to explain the pressure dependence on the permittivity or spontaneous polarization and electric field dependence of dielectric constant (113).

SEMICONDUCTORS

Theoretical results have shown that a significant change in the dielectric permittivity of a semiconductor can occur at low temperatures as a result of photoexcita­tion of impurities from the ground state to an excited state having larger polarizability (114). Theoretical results are obtained for the hot electron microwave conductivity and the change in permittivity as a function of frequency and bias electric field (115). Significant changes in conductivity and dielectric constant for a fixed bias field occurs at frequencies on the order of 1012 Hz. Reflectance spectroscopy and dc conductivity measurements were made in graphite intercalated with HN0 3 (116). Space charge limited current measurements were made in barium titanate and were used to calculate carrier concentration and mobility (117). Capacitance­voltage, charge centroid, and conduction measurements were made for the effects of energetic electron beam irradiation on Si02 films overlaid with Si3N4 (118).

214 CONDUCTION PHENOMENA IN DIELECTRIC SOLIDS

Dielectric measurements were made to determine the thres­hold radiation damage in amorphous semiconductors for thin film materials and memory devices showing their high radiation tolerance (119). A quantum theory is proposed for prediction of the dielectric constant for Types 111-V semiconductor (120).

A thin crystal of p-silicon sandwiched between two electrodes with a thin mica spacer on one face was ex­cited by a small ac voltage from 10 Hz to 10 Khz on its second surface (121). The capacitance and conductance loss in the surface and bulk were measured as a function of frequency from 0.3 to 3000 Hz at 300 o K.

The dielectric functipn of PbSnTe epitaxial films were studied by far infrared reflectivity (112). They were able to investigate the carrier concentration close to the film-substrate interface as a function of spatial position.

High energy injection of electrons into a dielectric was analyzed allowing the derivation of the generation and injection velocity distribution curves (123). The time dependence of dielectric conductivity is examined and a new measurement method is proposed (124) to find dielectric properties.

Non-destructive measurements of the mobility in semiconductors were made by means of the microwave Faraday effect (125) in particular for N-type Ge plates. Measurements of the ac response to ZnO based ceramics were made over the temperature range -200 to +300°C and frequency range 30 to 108 Hz (126). The parallel resis­tivity varies inversely with frequency suggesting a Maxwell-Wagner behavior or ionic polarization processes although the authors exclude these possibilities.

The static dielectric characteristics of disordered semiconductors were related to their energy spectra (127). The imaginary part of the dielectric constant for an indirect-gap semiconductor in a uniform electric field is calculated in closed form using a one-dimen­sional electron hole contact interaction model (128).

The dispersion relation of the complex permittivity is calculated using a perturbation theory (129) focusing attention on the singularity on the real part.

The permittivity and refractive index were measured in boron monophosphide (130), optical and transport properties of KTa03, KNb03, and BaTi03 in the paraelec­tric phase (131), dielectric constant and nonlinearity of Sb2S3 at microwave frequencies from 250 to 450 0 K (132). The dielectric is polar below 420 0 K and nonpolar above

THIN FILMS 215

the Curie temperature. Measurements of dielectric con­stant were made in gallium compounds (133), including temperature dependence in GaAs, CdTe and ZnSe (134), and other properties of oxide films on GaSb and of ternary germanium bismuth telluride (135). n

THIN FILMS

Many dielectric measurements were made using thin film samples. The dielectric loss is thickness dependent in thin films and was examined particularly for Barium Stearate films (136) and qualitatively explained in terms of the void structure. Ref1ectometric measurements mon­itored film thicknesses in multilayer reflecting systems. Erbium oxide thin films have an unusual thickness depen­dence of the dielectric constant (137). Films less than 700 AO thick and greater than 1300 AO exhibited usual behavior with increasing permittivity with increasing thickness approaching the bulk value. For intermediate thicknesses the permittivity first decreases to a minimum and then increases to the bulk value. Based on electron microscope observations it is suggested that this depen­dence arises because of crystalline transformations.

A model is proposed for the effect of a negative volume charge, found in a dielectric film by electron capture at neutral sites on the behavior of the thermal electron emission current in an electric field (138). Current voltage characteristics are derived for steady state and transient volume charges with measurements in A1203 , Ta205' Nb205 , Zr02 and SiO supporting the theory.

The damage properties of multilayer dielectric coatings for use in high power Nd glass lasers were investigated (139). A time resolved optical probe tech­nique was also used to study laser induced structural damage (140). The threshold energy density for this laser induced damage arising from absorption depends on the laser irradiance (141) determined by measurements of the time to breakdown of rf sputtered films.

Dielectric properties were measured in sputtered Ti02 thin films (142), in A1-CdTe-A1 and Au-CdTe-A1 structures (143), Me-CeTe-Me thin film structures (144), dielectric instability and breakdown in Si02 thin films using an avalanche theory where hole formation distorts the electric field and enhances current flow by hole drift (145), anodic oxides formed on sputtered Ta-Al alloy films (146), phosphorus nitride films (147), high

216 CONDUCTION PHENOMENA IN DIELECTRIC SOLIDS

field transport in NiO films switching from high to low resistance state (148), and the dc conductivity of copper phthalocyanine films with blocking contacts (149).

RF sputtered Al-photoconductor-Au sandwich struc­tures show well defined electronic and photoelectronic properties as does CdS and ZnS attributed to coulombic centers (150). The reversal of the photoelectric phenom­ena agrees with the existence of two opposite photoelec­tric effects, interband transitions and Poole-Frenkel photoexcitation.

Aging effects of dielectric films in metal-dielec­tric semiconductor structures were studied establishing relationships between number of defects vs. electrode area, number of surface charges vs. electrode area, micro­breakdown voltage vs. number of microbreakdowns, break­down voltage vs. storage time and annealing temperature, and defect density vs. annealing temperature (151). It is concluded that the change in electrophysical parameters with time is due mainly to processes occurring in local regions of small size.

The influence of ferroelectric substrates on the electrical conductivity and photoconductivity of CdSe semiconductor thin films showed a correlation between the decrease in spontaneous polarization of ferroelectric substrates and changes in conductivity of CdSe films (152). The changes in electrical conductivity and photo­conductivity as functions of field strength polarizing the substrate lead to an accurate reproduction of the ferroelectric hysteresis loop.

Dielectric properties were measured in rare earth oxides for use in thin film capacitors at 300 0 K (153).

Band structure of thin amorphous dielectric films and the work function or barrier height in solid state structures containing pyrolytic SiOS2 films is discussed (154) for UV injection of charges. Electrophysical properties of high temperature amorphous dielectric films (153) including effects of field diffusion, metal work function, and presence of positive space charge at low and high temperatures are considered.

Electron beam induced conduction was used as a diagnostic tool (156) discussing the problems of why the threshold energy corresponds to halfway penetration of the beam for a wide range of materials and specimen thickness.

Experiments are described to determine dispersion characteristics at low frequencies of thin film

POLYMERS 217

capacitors. It is supposed that mobile positive ions are responsible for the observed relaxation phenomena (157).

Variations in thin film dielectric properties at UHF using microstrip lines are examined (158). Using a cavi­ty resonator a method is used to measure electrical prop­erties of thin film semiconductor or dielectric films (159) .

POLYMERS

The electrical properties of flame retardant epoxy and unsaturated polyester resins made by the addition or the reaction method using halogenated or phosphorous organic compounds are investigated (160). The tempera­ture and frequency characteristics of the dielectric constant and of dielectric dissipation factor, volume resistivity, arc resistance, tracking resistance & di­electric strength are measured.

The effects of dielectric polarization on the mechanical properties of polycarbonate films were mea­sured (161) including isothermal and nonisothermal relaxation studies (162).

Measurements were made in polyethylene to determine the relationship between the tree initiation voltage and the time for space charge formation around a needle electrode (163).

The surface charge distributions resulting from the partial discharges in a perspex-air insulation system were measured and subjected to statistical analyses (164). Substantial changes in the distribution of surface charges occur before and after puncture.

A semi-quantative model is used to explain relax­ation oscillations observed in polymer fields near break­down. Oscillations arise from instability of potential barriers at the interface between the crystalline and amorphous regions where mobile ions accumulate (165). The results are applicable to low voltage capacitor manufacture.

The characterization and evaluation of polymer behavior in dc fields are discussed (166) and considers dielectric relaxation and transients of electronic con­ductivity.

Dielectric beta relaxation were studied in methac­rylic polymers (167), other properties in stereoregular poly (I-propyl methacrylate) and poly (T-butyl methacry­late) (168), low temperature effects in deuterated

21S CONDUCTION PHENOMENA IN DIELECTRIC SOLIDS

polyethylene (169), the amorphous fraction in oriented nylon 610 (170), relaxation time spectrum of dipolar reorientation in LDPE (171), electron beam induced con­duction in polyethylene terephthalate films (172), photo­conduction and dielectric breakdown in polyethylene around the glass transition temperature (173), low fre­quency behavior in hydrated poly (L-pro1ine) II (174), dc conductivity of polyacrylonitrile (175), effect of elongation on dielectric breakdown strength in PE (176), dependence on cross linking density of rubbers (177), in 3-percent carbon-filled PE (17S) and as a function of molecular mass (179), and in hexamethy1ene adipamide with metal contacts (lS0). It is shown by theoretical argu­ment and by experiment that only in the case of a first order kinetics polarization do TSD peaks occur at a fixed temperature (lSI). Otherwise the TSD peak position shifts with changing initial polarization. For space charge release, the maximum temperature is increasing with polarization temperature and time.

TSC measurements in photoe1ectrets of PET were made by illumination with monochromatic UV light at -lSO°C under a bias field (lS2). Electronic trap centers were investigated.

The influence of the electrical polarization on gamma irradiated radio-electrets of f1uoroethylene propylene (FEP) was made (lS3).

Two TSD peaks were observed in NH4Cl crystals even if not polarized (lS4). One occurs at the phase transition temperature of -30.6°c and is due to spontane­ous polarization of the crystal. The other occurs above O°C and is due to the spontaneous current caused by an injection of defects formed under the influence of mois­ture on sample surfaces.

Two simple improved measurement cells are described which have a good thermal response and are cooled or heated by i~~ersion in a bath liquid (lS5).

Thermally stimulated and isothermal depolarization currents of the low density PE's are investigated from 80-320 o K and are analyzed in terms of a continuous relax­ation time spectrum (186). Features of the TSD of poly­mer films charged by an electron beam are discussed (187). TSC measurements from carriers trapped in PE were also made (18S).

Distribution functions calculated from the thermo­current spectra are used to analyze relaxation processes in methacrylate polymers (189). Short circuit TSC

POLYMERS 219

studies of thermoelectrets show that the position of the current maxima is independent of polarizing field and temperature (190). The total released charge and peak values of current vary linearly with polarizing field. TSD studies were made in iodine-doped poly-vinyl acetate thin films (191).

An open circuit TSC procedure is described and ana­lyzed to separate the effect of various trapping levels on the mobility of charge carriers (192). The procedure is applied to trap modulated mobilities of electrons and holes in teflon FEP charged at room temperature by application of a high dc field. Mobilities show an Arrhenius type temperature dependence and the activation energies are determined.

Persistent polarization in poly (vinylidene fluo­ride) thermoelectrets prepared under high electric field were studied by measurements of depolarization and pyroelectricity (193).

Current and charge characteristics during formation of the magneto-electret state of PVC show a rise in current with increasing magnetic field up to 8.4 KG and a rapid drop thereafter (194).

The changes in refractive index in magneto-electrets of perspex with different magnetic fields at different forming temperatures were measured (195). At lower form­ing temperatures the refractive index increases with increasing magnetic field while it decreases at higher forming temperatures with increasing magnetic field. No recovery in the refractive index was observed up to 30 days thereafter.

Composite magneto-electrets were prepared by joining two layers of different materials (perspex & polynite). The initial and final charge after 30 days on both sur­faces of composite samples have a value much higher than the charge on electrets made of only one material (196). The charge decay in composite electrets is much slower and lesser than in single substance electrets.

Magneto-electrets were also prepared both below and above the softening point of perspex ranging from 60 to 170°C. At various magnetic fields below softening point the magneto-electrets have a positive isocharge and show an increase in dielectric constant (197).

TSD was also used in the ultralow frequency range enabling one to locate the glass-rubber transition of polymers (198). TSD broadens the scope of dielectric measurements by revealing high temperature loss phenomena which in normal ac measurements are obscured by

220 CONDUCTION PHENOMENA IN DIELECTRIC SOLIDS

conduction losses. These measurements shed light on the contribution of space charge to low frequency losses and the origin of the distribution functions of dipole peaks.

MISCELLANEOUS

The dielectric strength and ionic and electronic conductivities of MOM assemblies can be used as thin film surface thermocouples for use in the gas turbine industry (199). Dielectric properties were measured in some nickel-zinc ferrites at rf (200), in carbor­anes (201), various perovskite layer compounds (202) in the superconducting and normal states of Li spinel compounds (203), zeolite systems (204), N-methy1buty1-amide (205), the low frequency behavior of beta-rhombo­hedral boron (206), in pyrophy11ite as a function of water vapor pressure (207), in zirconium and yttrium compounds (208), in glycine methyl ester monohydro­chloride (209), in the DI-substituted Se derivative of TTF-TCNQ (210), the complex permittivity of the anion radical complex salt of tetracyanochinodimethane with methy1tripheny1arsonium (211), liquid solid phase transitions in benzene (212), grain size effects in barium titante ceramics (213), phase transitions in triammonium hydrogen trisu1phate (214), and the effect of heat in CaS2Sr (C2H5C02)6 (215).

The effects of moisture absorption and adsorption on the rate of charge decay from polyester and nylon 12 powder layers were reported (216).

Analysis of the pre-breakdown state of dielectrics subjected to nanosecond laser pulses is discussed (217). Electron avalanches in the surface layer causes a fre­quency shift of the transmitted pulse and the change in Brewster angle is measured.

In connection with the feasibility of the comparison of pressures by a method whereby various dielectrics be­come conductors, a procedure is developed for determining a regular succession of transitions (218). Data for pressures of transitions in diamond and in cubic modifi­cations of boron nitride are given.

To identify dielectric-metal phase transitions it is proposed that the observation of hysteresis phenomena in the electrical conductivity be used (219).

A theory and network simulation for the anomaly in the dielectric permittivity in metal-dielectric transi­tions is developed (220).

BIBLIOGRAPHY 221

It is shown that the propagation of transverse acoustoelectric surface waves induced by electrostriction in a semi-bounded solid medium with anomalously large di­electric permittivity and in the presence of a constant external electric field can occur (221). The propagation of such waves in 2 contacting elastic bodies with an electric field in one is investigated.

Optical and dielectric effects in nematic liquid crystal films due to ultrasound are investigated (222).

Disruption of the stationary state and the electri­cal breakdowns of amorphous dielectrics are investigated (223). Coupled stresses in elastic dielectrics due to the electric field are also investigated (224).

The complex conductivity of dielectric structures with relaxation polarization found from experiment per­mits one to construct a diagram similar to that of Cole­Cole for the components of complex permittivity allowing simultaneous analysis of both diagrams (225).

BIBLIOGRAPHY

Books

1. J. van Turnhout, Thermally Stimulated Discharge of Polymer Electrets, Eleevier Scientific Publ. Co., Amsterdam (1975), 335 pp.

2. E. P. Goodings, "Conductivity and Superconductivity in Polymers," Chern. Soc. Rev. 2, 95-123 (1976).

3. Ceramic Engineering Dept., Univ. of Missouri, Rolla, Mo., "Mixed Alkali Glasses-Their Properties and Uses," J. Non-Cryst. Solids (Netherlands) 21, 343-372 (1976). -

4. S. Hunklinger, H. Sussner, and K. Dransfeld, "New Dynamic Aspects of Amorphous Dielectric Solids," Advances In Solid State Physics 16, 267-291 (1976).

5. J. Wong, "A Review of Infrared Spectroscopic Studies of Vapor-Deposited Dielectric Glass Films on Sili­con," J. Electron. Materi. 5, 113-160 (1976).

6. A. K. Jonscher, "Alternating Current Diagnostics of Poorly Conducting Thin Films," Thin Solid Films (Switzerland) 36,1-20 (1976).

7. A. K. Vijh, "Electrical Properties of Non-Metallic Deposits," Surf. Technol. (Switzerland) 4, 7-30 (1976). -

8. G. A. Maugin, "On the Foundations of the Electro­dynamics of Deformable Media With Interactions,"

222 CONDUCTION PHENOMENA IN DIELECTRIC SOLIDS

Lett. Appl. and Eng. Sci. (GB) i, 3-13 (1976).

Conferences

9. R. Sahu and R. P. Misra, "Accelerated Aging of Poly­mer High Voltage Insulator Material Under Ultra­violet Light and Temperature," 1976 IEEE Int. Symp. on E1ec. Insu1., 24-27 (1976).

10. M. Kosaki, N. Shimizu, and K. Horii, "Treeing of Polyethylene at 77°K," 1976 IEEE Symp. on Elec. Insul., 132-135 (1976).

11. M. Ieda and M. Naivato, "DC Treeing Breakdown Asso­ciated with Space Charge Formation in PE," 1976 IEEE Int. Symp. on Elec. Insul., 201-204 (1976).

12. F. Noto, N. Yoshimura, and T. Data, "Tree Initiation in PE by Application of DC and Impulse Voltage," 1976 IEEE Int. Symp. on Elec. Insul., 205-208 (1976).

13. Y. Saito, M. Fukuzawa, and H. Nakamura, "On the Mechanism of Tree Initiation," 1976 IEEE Int. Symp. on Elec. Insul., 209-212 (1976).

14. M. Zahn, "Effects of Prestressing, Excitation Rise­time, Excitation Frequency, and Charge Injection on the Charging and Discharging Transients for Drift Dominated Conduction In Electrical Insulators," 1976 IEEE Int. Symp. on Elec. Insul., 239-242 (1976) .

15. H. J. Wintle, "Photoelectric Effects In Insulating Polymers and Their Relation to Conduction Pro­cesses," 1976 IEEE Int. Symp. on Elec. Insul., 248-251 (1976).

16. Electrochemical Society Spring Meeting, Electro­chemical Soc., Princeton, N.J.

17. Third European Meeting on Ferroe1ectricity, (Zurich, Switzerland) (1975).

18. 1975 Conference on Dielectric Materials, Measure­ments, and Applications, lEE Conference Publication No. 129, England (1975).

19. International High Voltage Symposium, (Zurich, Switzerland) (1975).

20. J. M. Go1dschvartz, A. K. Niessen, and W. Boone, Conduction and Breakdown In Dielectric Liquids,De1ft Univ. Press (1975), 243 pp.

BIBLIOGRAPHY 223

THEORETICAL WORK

21. M. Zahn, "Transient Drift Dominated Unipolar Conduc­tion Between Concentric Cylinders and Spheres," IEEE Trans. on E1ec. Insu1. EI-11, 150-157 (1976).

22. H.M. Gupta and R.J. van Overstraeten, "Theory of Isothermal Dielectric Relaxation and Direct Deter­mination of Trap Parameters," J. App1. Phys. 47, 1003-1009 (1976). --

23. K. Hoshmo, "Electrical Conductivity and Electron Localization for the Lloyd Hodel," Phys. Lett. A (Netherlands) 56A, 133-4 (1976).

24. C. Grosse and -:r:-L. Greffe, "Permittivity of Amor­phous Dielectrics Composed of Anisotropic Polar Ho1ecule," J. Phys. (France) 37, 115-121 (1976).

25. A G. Kokin, "Dielectric Properties of a Matrix Mixture With a Regular Structure," Zh. Tekh. Fiz (USSR) 45, 877-882 (1975).

26. C. F. Gallo and W. L. Lama, "Some Charge Exchange Phenomena Explained by a Classical Model of the Work Function," J. Electrostatics (Netherlands) 2, 145-150 (1976). -

27. R. L. Bush, "Dielectric Screening In One-Dimensional Disordered Systems," Solid State Commun. 18, 1189-1192 (1976). --

28. M. J. Frankel, "Electrodynamics of Non10cal Bounded Dielectrics," Phys. Rev. B. 13, 2587-2595 (1976).

29. R. Shimizu, Y. Kataoka, T. I-.-Kuta, T. Koshimura, and H. Hoshimoto, " A Monte Carlo Approach to the Direct Simulation of Electron Penetration In Solids," J. Phys. D: App1. Phys. 2., 101-114 (1976).

GLASSES

30. H. Hagiwara and R. Oyamada, "Dielectric Constant, Infrared Absorption and Raman Effect of Glassy Fe20rPbO-Si02 System," Yogyo-Kyokai-Shi (Japan) 84, 264-270 (1976).

31. A. Mansingh, J. K. Vard, and R. P. Tandon, "Dielec­tric Dispersion in Molybdenum Phosphate Glasses," J. Phys. C (GB) 9, 1809-1817 (1976).

32. T. Tsuchrya and T. Mouya, "Electronic Conduction and Dielectric Relaxation in Phosphate Glass Con­taining MnO and Fe203-Reducing and Annealing Ef­fects," Yogyo-Kyokai-Shi (Japan) 83, 419-l12 (1975).

33. M. Tomozawa, C.H. Kim, and R.ll. Doremus, "Glass Sur­face Characterization by Electrical Measurements," J. Non-Cryst. Solids (Netherlands) 19,115-123 (1975).

34. H. Namikawa, "Multiple Diffusion Process in Oxide Glas­ses," Res. Electech.lab. (Japan) 757, 1-83 (1975).

224 CONDUCTION PHENOMENA IN DIELECTRIC SOLIDS

35. D. 1. H. Atkinson and P. W. McMillan, "Glass­Ceramics With Random and Oriented Microstructures," J. Mater. Sci. (GB) 11, 994-1002 (1976).

36. V. I. Gaman, V. M. Kalygina, and E. F. Ryannel, "The Mechanism of Current Transfer in Metal-Dielectric­Metal Systems Based on Vanadium-Phosphate Glasses," Izv.Vuz.Fiz.(USSR), 107-115 (1976).

CRYSTALLINE PROPERTIES

37. G. P. Johari and E. Whalley, "Dielectric Properties of Ice VI at Low Temperatures," J. Chern. Phys. ~, 4484-9 (1976).

38. G. P. Johari, "The Dielectric Properties of H20 and D20 Ice at MHz Frequencies," J. Chern. Phys. ~, 3398-4005 (1976).

39. G. P. Johari and S. J. Jones, "Dielectric Properties of Polycrystalline D20 Ice (Hexagonal), II Proc. Roy. Soc. A (GB) 349, 467-95 (1976).

40. J. J. Inchachal and A. H. Weber; "Electrical Prop­erties of KF-Doped Hexagonal Ice," J. Chern. Phys. 64, 4952-6 (1976).

41. C. Boned, H. Saint-Guirons, and R. Cazaban-Morgue, "Dielectric Properties of the Ice Obtained by Solidification of Aqueous Solutions of NH4Cl and of Alkaline Salts," J. Chern Phys. (France) 73, 367-73 (1976). -

42. C. Boned, "Evaluation of the Dielectric Properties of Ice - A Model Based on the Existence of Micro­structure," J. Phys. (France) 37, 165-74 (1976).

43. S. C. Goyal and M. P. Verma, "Dielectric Properties of Alkali Halide and Alkaline Earth Oxide Crystals," J. Phys. and Chern. Solids (GB) 37, 761-3 (1976).

44. A. T. Nicolau and N. Dusoiu, "Asbestos Dielectric Anisotropy," Stud. and Cercet. Fiz. (Rumania) 28, 225-31 (1976). -

45. V. T. Berezin, "Influence of Elastic Deformation on Dielectric Properties of Molecular Crystals," Ukr. Fiz. Zh. (USSR) 21, 1032-41 (1976).

46. H. T. M. Haenen,-"Experimental Investigation of the Relationship Between Generation and Decay of Charges on Dielectrics," J. Electrostatics (Netherlands) 2, 151-73 (1976).

47. A. A. Vorob'ev~ V. M. Lisitsyn, and V. V. Seleznev, "Some Laws Governing the Charging of Dielectrics by

BIBLIOGRAPHY 225

Low-Energy Electrons," lzv. Vuz. Fiz. (USSR) 137-9 (1976).

48. A. H. Price, J. o. Williams, and R. W. Munn, "Di­electric Tensor, Effective Polarizability and Local Electric Field in Pyrene Crystals," Chern. Phys. (Netherlands) 14, 413-19 (1976).

49. M. W. Klein, C. Held and E. Zuroff, "Dipole Inter­actions Among Polar Defects. A Self-Consistent Theory with Application to OH Impurities in KCl," Phys. Rev. B 13, 3576-89 (1976).

50. D. Chakrabortyand G. Lehmann, "On the Structures and Orientations of Hydrogen Defects In Natural and Synthetic Quartz Crystals," Phys. Status Solidi A (Germany) 34, 467-75 (1976).

51. J. Klimowski, W. Wanorski, and D. Ozgo, "Effect of Hydrostatic Pressure on the Phase Transition Temper­atures and Spontaneous Polarization of Thiourea Monocrystals," Phys. Status Solidi A (Germany) 34, 697-704 (1976). --

52. J. Shanker and M. P. Verma, "Analysis of Electronic Po1arizabilities of Cations In Crystals with Rutile Structure," J. Phys. and Chern. Solids (GB) ll, 639-40 (1976).

53. M. D. Volnyanskii, o. A. Grzhegorzhevskii, A. Yu. Kudzin, and S. A. Flirova, "Electromechanical Prop­erties of Lithium Germanate Crystals," Sov. Phys.­Solid State 12, 1657 (1975).

54. G. Lucovsky, R. M. White, W. Y. Liang, R. Zal1en, and Ph. Schmid, "The Lattice Po1arizabili ty of PbI2," Solid State Commun. 18, 811-14 (1976).

55. M. E. Striefler and G. R. Barsch, "Lattice Dynamics of Alpha-Quartz," Phys. Rev. B 11., 4553-66 (1975).

56. V. K. Agarwal, "Correlation of Dielectric Breakdown Strength with Basic Parameters in Ionic Crystals," Phys. Status Solidi A (Germany) 34, K 67-9 (1976).

57. J. Sworakowski, "Structural Disorder as a Source of Traps for Current Carriers in Organic Molecular Crystals," Mol. Cryst. and Liq. Cryst. (GB) 33, 83-9 (1976).

58. R. Sano, "Static Dielectric Constant and Self­Energy of a Phonon in KC1," J. Phys. C. (GB) .2., 849-55 (1976).

59. B. C. Grobmaier, 11 PbTi 03 Grown from the Mel t, " Ferroe1ectrics (GB) 13, 501-3 (1976).

60. J. K. Moscicki, "Dielectric Properties of the Metastable and Stable Solid Phase Modifications of

226 CONDUCTION PHENOMENA IN DIELECTRIC SOLIDS

P-Methoxy Benzylidene p-n-Butyl Aniline (MBBA)," Solid State Commun. 20, 481-3 (1976).

61. Yu-Tung Yang, "Dielectric Resonance of InSb in the rf Range Around Room Temperature," Nuovo Cimento B (Italy) 34B, 325-33 (1976).

62. H. M. Kizilyalli and P. R. Mason, "DC and AC Electrical Conduction In Single Crystal Alumina," Phys. Status Solidi A (Germany) ~, 499-508 (1976).

63. M. Hartmanova, M. Suszynska, I. Thurzo and H. Rezabkova, "Some Electrical Properties of KCl + Pb 2 Crystals," Czech. J. Phys. B (Czechoslovakia) B26, 1127-36 (1976).

64. Ah Mee Hor, S. Radhakrishna, and P. W. M. Jacobs, "Optical and Electrical Properties of Ammonium Perchlorate Doped with Chromate Ions," Can. J. Phys. (Canada) ~, 1669-75 (1976).

65. V. I. Aleksandrov, V. V. Voronov, F. F. Kalabukhova, Yu. S. Kuz'rninov, and V. M. Tatarintsev, "Electrical and Optical Properties of Scandium Oxide Single Crystals," Sov. Phys. Lebedev Inst. Rep. No.4, 21-7 (1975).

66. K.-D. Toepfer and H. W. Helberg, "Dielectric Disper­sion of Thiourea Single Crystals at Microwave Frequencies Between 8.25 and 75.0 GHz," Phys. Status Solidi A (Germany) 35,131-6 (1976).

67. A. Polian, R. Le. Toullec, M. Balkanski," Dielec­tric Function in CdxHgl_xTe Mixed Crystals," Phys. Rev. B 11., 3558-65 (1976).

68. J. Pozniak, E. Mariani, and L. Machovie, "Dielectric Losses of Alkaline Earth Doped KCl and NaCl Crystals Containing Z Centers," Kust. and Tech. (Germany) 11, 285-9 (1976). --

69. J. P. Ferrans and T. F. Finnegan, "Electric Suscep­tibility and dc Conductivity of Crystalline TTF­TCNQ," Solid State Commun. 18, 1169-72 (1976).

70. K. Seino, T. Kawaguchi, andI<. Yamaji, "Properties and Structure of 2-Propanol-Water (1/3) Crystal," Jap. J. Appl. Phys. (Japan) 15, 569-74 (1976).

71. v. I. Popolitov, A. N. Lobachev, L. A. Ivanova, S. Yu. Stefanovich, G. A. Gol'der, V. V. Chechkin, Yu. N. Venevtsev, and E. 1. Pakhul'skaya, "Synthesis and Investigation of BiNB04 and BiTa04 Single Crystals and Ceramics," Sov. Phys.-Crystallogr. 20, 480-3 (1975).

72. v. I. Aleksandrov, V. V. Voronov, Yu. S. Kuz'minov, V. V. Osiko, and V. M. Tatarintsev, "Electrical

BIBLIOGRAPHY

Properties of Hf0 2 - .lY203 and Zr02 - .lY203 Crystals," Sov. Phys. Lebedev Inst. Rep., No.3, 1-7 (1975).

73. J. F. Nagle, G. R. Allen, and D. P. Almond, "Phase Transitions in 'Two-Dimensional' Hydrogen Bonded Crystals," Ferroe1ectrics (GB) 13, 533-5 (1976).

74. E. R. Magnaschi, L. Menafra, and A. Rigaimonti, "Dielectric and Nuclear Spin-Lattice Relaxation Measurements Around the Phase Transition in the Layered SnC12' H20 Crystal," Ferroe1ectrics (GB) 13, 545-7 (1976).

227

75. D. I. Varsburd, V. P. Kuznetsov, V. A. Moska1ev, and M. M. Shafir, "Simulation of Processes in Heavy Charged Particle Tracks by Pulsed Irradiation of Solids with High Density Electron Beams," Sov. At. Energy 39,1016-17 (1975).

76. S. C. Goyal, "Dielectric Behavior of Solids, "Solid State Commun. 20, 269-70 (1976).

77. A.T •. Nico1au and N. Dusoiu, "Dielectric Anisotropy of the Gypsum in the Microwave Domain," Stud. and Cercet. F1z. (Rumania) 28, 645-52 (1976).

78. T. Hatakeyama and Y. Kagawa, "Acousto-Optica1 and Acousto-Die1ectric Effects in a Nematic Liquid Crystal," J. Sound and Vib. (GB) 46, 551-9 (1976).

FERROELECTRICS

79. A. G. Petrenko, L. A. Ievenko, and V. P. Zhag10, "Effect of Oxide Additives on the Dielectric Con­stant of Ferroelectric Ceramics in the Superhigh Frequency Range," Inorg. Matter 11, 333-5 (1975).

* 80. H. Arend, R. B1inc, and A. KanduS'a"r, "Search for Ferroe1ectricity in the PbHP04 Family," Ferro­e1ectrics (GB) 13, 511-13 (1976).

81. T. N. Verbitskaya and L. S. Soko10va, "On the Feasibility of Thin Ferroelectric Films with Fie1d­Dependent Capacitance," Ferroe1ectrics (GB) 13, 419 (1976). -

82. Ae Joo Park, "A Study of the Charge of the Piezo­electric Property of PZT Ceramics by Addition of Mn02 and W03 as Impurities," New Phys. (Korean Phys. Soc.) 14, 66-70 (1974).

83. A. I. Baranov, Yu. N. Kharitonov, and V. M. Rudyak, "Influence of Hydrostatic Pressure on Polarization Processes in a Ferroelectric Semiconductor SbSi," Sov. Phys.-So1id State 18, 24-5 (1976).

228

84.

85.

86.

87.

88.

89.

90.

91.

92.

93.

94.

95.

CONDUCTION PHENOMENA IN DIELECTRIC SOLIDS

G. Martin, E. Hegenborth, V. Ya. Fritsberg, and T. B. Romanovskii, "Dielectric Properties of (Srl-xPbx)Ti03 Solid Solutions at Low Temperatures and High Pressures," Sov. Phys.-Solid State 18, 143-4 (1976). G. N. Uitalinskaya, V. A. Doroshenko, and M. A. Ugryumova, "Temperature and Stability of the Proper­ties of Lead Zirconate-Titanate Piezoceramics," Sov. Phys.-Acoust. 21, 521-3 (1975). P. Wurfel and 1:"" P. Batia, "Depolarization Effects In Thin Ferroelectric Films," Ferroelectrics (GB) 12,55-61 (1976). K. H. Ehses and H. E. Muser, "The Nonlinear Dielec­tric Behavior of TGS," Ferroelectrics (GB) 11., 247-8 (1976). o. E. Fesenko and V. G. Smotrakov, "Optic and Di­electric Study of Lead Zirconate Crystals," Ferro­electrics (GB) 12, 211-13 (1976). P. Seidel and W-:-Hoffmann, "X-ray Diffraction Studies, Optical and Dielectrical Measurements of Sodium Niobate in the Range of Temperature from 293 0

K to lOoK," Ferroelectrics (GB) 12, 203 (1976). K. Gesi, "Dielectric Study on thePhase Transitions in Triglycine Selen"ate-Deutera ted Triglycine Selenate System," J. Phys. Soc. Jap. (Japan) 41, 565-9 (1976). --J. Albers, R. W. Sailer, and H. E. Muser, "Dielec­tric, Elastic, and Piezoelectric Properties of Mg-Cl Borocite," Phys. Status Solidi A (Germany) 36, 189-95 (1976). L Uchino and S. Nomura, "Crystallographic and Dielectric Properties in the Solid Solution Systems Pb (Fe2,3Wl,3)03-;,b(Mgl,3Ta2,3)03 ~nd Pb(MgW)1,2 0yPb(FeTa)1203, J. Phys. Soc. Jap. (Japan) 41, 542-7 (1976): J. L. Kirk, L. E. Cross, and J. P. Dougherty, "Pressure and Temperature Dependence of the Dielec­tric Properties and Phase Transitions of the Ferro­electric Pb5Ge30ll," Ferroelectrics (GB) 11, 439-43 (1976). o. S. Didhovskaya, T. P. Kisel, G. I. Nikiforova, A. N. Bronnikov, and V. V. Klimov, "Nonlinear Di­electrics Based On the Solid Solutions BaTi0 3-Pb (Fel,2Tal,2)03'" Inorg. Matter 11, 62-5 (1975). A. Mansingh, S. S. Barva, and Rai Gulshan, "Micro­wave Dielectric Dispersion in Triglycine Sulphate,"

BIBLIOGRAPHY 229

Indian J. Pure and Appl. Phys. 14, 298-303 (1976). 96. L. Hank and S. Nomura, "Ferroelectric and Piezo­

electric Properties of XPbl_yKy(Znl,3Nb2 3)03-Y2-(1-X)PbTi03 Solid Solutions," Jap. J. Appl. Phys. 15, 1059-63 (1976).

97. J. K. Park and W. W. Grannemann, "Thin Ferroelec­tric Films of BaTi03 on Doped Silicon," Ferroelec­trics (GB) 10, 217-20 (1976).

98. G. A. Samor~ "Temperature and Pressure Dependences of the Dielectric Properties of PbF2 and the Alka­line-Earth Fluorides," Phys. Rev. B 13, 4529-44 (1976). -

99. S. Fujimoto, N. Yosuda, and H. Ukai, "Antiferro­electric Cupric Formate Tetrahydrate Under High Pressure," Ferroelectrics (GB) 11, 341-4 (1976).

100. J. C. Holste, W. N. Lawless and G. A. Samora, "Dielectric Properties of KH2P04, BaTi03, PbZr .65 Ti. 350 3 and T1C1 Between .015 and lOoK," Ferro­electrics (GB) 11, 337-40 (1976).

101. R. Beliackas and J. Grigas, "Microwave Dielectric Nonlinearity of SbSi," Phys. Status Solidi A (German) ~, K6l-4 (1976).

102. D. G. Bozinis and J. P. Hurrell, "Optical Modes and Dielectric Properties of Ferroelectric Orthorhombic KNb0 3 ," Phys. Rev. B 13, 3109-20 (1976) .

103. B. Brezina, F. Smutny, and J. Fausek, "Ferroelec­tricity in PbHS04 and PbDS04'" Czech. J. Phys. B B25, 1411-12 (1975).

104. S. Fujimoto and N. Yasuda, "Dielectric Properties of Inorganic Salts (KN0 2 , NaNOZ' CaC0 3) Under High Pressure by Liquid-Solid Hybrid Systems," Electr. Eng. Jap. 95, 6-12 (1975).

105. Y. Shiroishi, A. Nakata, and S. Sarvada, "Ferro­electricity in RbLiS04," J. Phys. Soc. Jap. 40, 911-12 (1976).

106. R. Blinc, H. Arend, and A. Kanduser, "Vibrational Spectra, Hydrogen Bonding, and Ferroelectricity in the PbHP0 4 Family," Phys. Status Solidi B (Germany) 74, 425-35 (1976).

107. Z. M. El Saffar and G. Pope, "Ferroelectric Transi­tion in Solid Solutions of Deuterated Ammonium Rochelle Salt," J. Chern Phys . .§!±., 2696 (1976).

108. A. V. Turik, V. Ya. Mashchenko, G. I. Khasabova, and A. D. Feranov, "Infra-low-Frequency Dispersion

230 CONDUCTION PHENOMENA IN DIELECTRIC SOLIDS

in Lead Titanate," SOy. Phys. 1576-7 (1975).

Solid State 11.,

109. K. Gesi and K. Ozawa, "Change In The Order of the Phase Transition in Ferroelectric Triglycine Selenate at High Pressures," J. Phys. Soc. Jap. ~, 599-600 (1976).

110. G. W. Timco and H. H. Schloessin, "The Effects of High Pressure and Temperature On the Dielectric Constant of Ferroelectric Perovskite Ceramic PZT-4," Ferroelectrics (GB) 11,409-12 (1976).

Ill. K. Tanaka, Y. Higuma, K. Yokoyama, T. Nakagawa, and Y. Hamakawa, "Ferroelectric PLZT Thin Films Fab­ricated by RF Sputtering," Jap. J. Appl. Phys. 15, 1381-2 (1976).

112. A. A. Adorin and A. A. Grekov, "Electrical Conduc­tance In a Layer of Spontaneous Polarization Screening in SbSi Under Opposed Polarization Condi­tions," SOy. Phys. - Solid State 17,1591-2 (1975).

113. S. Fujimoto and N. Yasuda, "Phenomenological Treatment of Antiferroelectric Transitions Under Hydrostatic Pressure," Jap. J. Appl. Phys. ]2, 595-600 (1976).

114.

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116.

117.

118.

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120.

SEMICONDUCTORS

E. E. Godik, "Photodielectric Effect Associated with the Excitation of Impurities in Semiconduc­tors, SOy. Phys. - Solid State 18, 393-4 (1976). P. Das and D. K. Ferry, "Hot Election Microwave Conductivity of Wide Bandgap Semiconductors," Solid State Electronics (GB) 19, 851-5 (1976). J. E. Fischer, T. E. Thompson, G. M. T. Foley, D. Guerard, M. Hake, and F. L. Lederman, "Optical and Electrical Properties of Graphite Intercalated with HN0 3," Phys. Rev. Lett. ]I, 779-82 (1976). L. Yu. Kudzin and K. A. Kolesnichenko, "Space­Charge-Limited Current in Semiconducting Barium Titanate," SOy. Phys. J. 1., 142-5 (1976). T. P. Ma, B. H. Yun, D. J. Dimaria, and G. A. Scoggan, "Effects of Electron-Beam Irradiation on the Properties of CVD Si3N4 Films in MNOS Structures," J. Appl. Phys. 47, 1599-1604 (1976). R. Vogel Nicolaides, S. Defe~ and L. W. Doremus, "Radiation Tolerance of Amorphous Semiconductors," IEEE Trans. Nucl. Sci., V. NS-23, 839-48 (1976). S. C. Goyal and K. K. Sarkar, "Quantum Theory of

BIBLIOGRAPHY

Electronic Dielectric Constant of Semiconductors (III-V)," Solid State Commun. 18, 1595-7 (1976).

121. V. K. Farkya, "The Effect of ac Perturbance on a Silicon Surface," Bull. Tech. Univ. Istanbul (Turkey) 28, 32-4 (1975).

231

122. W. E. Tennant and J. A. Cape, "Study of the Dielec­tric Function of PbSnTe Epitaxial Film by Far­Infrared Reflectivity," Phys. Rev. B 13, 2540-7 (1976) .

123. o. B. Evdokimov, "Volumetric High Energy Injection of Electrons Into a Dielectric," Sov. Phys. J. 1, 7-12 (1976).

124. L. A. Badian, '~easurements of Dynamic Resistivity of Solid Dielectrics," 1975 Dielectric Materials, Measurements and Applications, 277-80 (1975).

125. J. Musil, F. Zacek, A. Burger, and J. Karlovsky, "Non-destructive Measurements of the Mobility In Semiconductors by Means of the Microwave Faraday Effect," Czech. J. Phys. B B26, 485-8 (1976).

126. L. M. Levinson and H. R. Philipp," AC Properties of Metal Oxide Varistors," J. App1. Phys. 47, 1117-22 (1976) . -

127. V. L. Barich-Bruevich, "Some Dielec;.tric Character­istics of Disordered Semiconductors," Vestn. Mosk. Univ. Fiz. Astron. (USSR) 16, 550-6 (1975).

128. J. K. Priham and C. M. Menchina, "Phonon-Assisted Elec troabsorption by con tact Exci tors," Phys. Status Solidi B (Germany) 74, 375-81 (1976).

129. F. T. Vas'ko, "Permittivityof Semiconductors Near the Fundamental Absorption," Sov. Phys. - Semicond. 9, 1032-4 (1975).

130. T. Takenaka, M. Takigawa, and K. Shohno, "Dielec­tric Constant and Refractive Index of Boron Monophosphide," Jap. J. Appl. Phys. 15, 2021-2 (1976) .

131. F. M. Michel-Calendini and L. Castet, "Band Struc­ture, Optical and Transport Properties of KTa0 3 , KNb0 3 and BaTi03 in the Paraelectric Phase," Ferroelectrics (GB) 13, 367-70 (1976).

132. J. Grigas, J. Meshkauskas, and A. Orliukas, "Di­electric Properties of Sb 2S3 at Microwave Frequen­cies," Phys. Status Solidi A (Germany) 37, K39-4l (1976) . -

133. C. Ance and A. Nguyen Van Mau, "Dielectric Constant EO of Gal_xAlxSb Compound," J. Phys. C (GB) 2., 1565-70 (1976).

232 CONDUCTION PHENOMENA IN DIELECTRIC SOLIDS

134. I. Strzalkowski, S. Joshi, and C. R. Crowell, "Dielectric Constant and Its Temperature Depen­dence for GaAs, CdTe, and ZnSe," Appl. Phys. Lett. 28, 350-2 (1976).

135. J. Klikorka, M. Frumar, L. Tichy, L. Panak, and H. Ticha, "Some Physical Properties of Ternary Germanium Bismuth Telluride (GeBi4Te7) Semiconduct­ing Crystals," J. Phys. and Chem. Solids (GB) 22, 477-9 (1976).

THIN FILMS

136. S. K. Gupta and V. K. Srivastava, "Thickness Influ­ence on Dielectric Loss," J. Phys. and Chem Solids (GB) 37, 975-7 (1976).

137. U. Sai;na and O. N. Srivastava, "Unusual Thickness Dependence of the Dielectric Constant of Erbium Oxide Films," Thin Solid Films (Switzerland) 33, 185-92 (1976). --

138. E. G. Kostsov, "Non-stationary Currents In Thin Dielectric Films," Avtometriya (USSR) No. ~, 67-72 (1976) .

139. C. E. Thomas, B. Guscott, K. Moncur, S. Hildum, and R. Sigler, "Investigation of the Damage Properties of Multilayer Dielectric Coatings For Use In High Power Nd Glass Lasers," Proc. of a Symp. on Laser Induced Damage In Optical Materials, 296-304 (1976) •

140. N. Alyassini and J. H. Parks, "Time Resolved Study of Laser-Induced Structural Damage In Thin Films," Proc. of a Symp. On Laser Induced Damage In Optical Materials," 204-8 (1976).

141. R. H. Picoid, D. Milam, and R. A. Bradbury, "Threshold Ambiguities in Absorptive Laser Damage to Dielectric Films," Proc. Symp. on Laser Induced Damage In Optical Materials, 272-83 (1976).

142. w. M. Paulson and E. L. Hall, "Dielectric Proper­ties of Sputtered Ti02 Thin Films," Electrochemical Soc. Spring Meeting, 237-8 (1976).

143. M. Rapos, M. Ruzinsky, S. Luby, and J. Cervenak, "Dielectric Properties of Thin-Film Al-CdTe-Al and Au-CdTe-Al Structures," Elektrotech. Cas. (Czechoslovakia) 27, 322-33 (1976).

144. M. Rapos, M. Ruzinsky, S. Luby, and J. Cervenak, "Dielectric Properties of Me-CeTe-Me Thin Film Structures," Thin Solid Films (Switzerland) 36, 103-6 (1976). --

BIBLIOGRAPHY 233

145. T. H. Distefano and M. Shatzkes, "Dielectric Insta­bility and Breakdown in Si02 Thin Films," J. Vt1c. Sci. and Technol. 13, 50-54 (1976).

146. S. Luby, "Dielectric Properties of Anodic Oxides Formed on Sputtered Ta-Al Alloy Films," Thin Solid Films (Switzerland) 32, 61-4 (1976).

147. S. Veprek, "Dielectric Properties of Phosphorus Nitride Films," J. Phys. and Chem Solids (GB) 37, 554 (1976). --

148. N. Fuschillo, B. Lalevic, and B. Leung, "High-Field Transport in NiO and Nil_xLixO Thin Films," Solid­State Electron. (GB) 19, 209-19 (1976).

149. A. Yu. Vidadi, K. Sh. Kocharli, B. Sh. Barkhalov, and S. A. Sadreddinov, "Direct Current Conductivity of Copper Phthalocyanine Films In the Presence of Blocking Contacts," Phys. Status Solidi A (Germany) 33, K67-7l (1976).

150. H. Murray and A. Tosser, "Electronic and Photoelec­tric Properties of Sputtered Dielectric Thin Films," Thin Solid Films (Switzerland) 36, 247-50 (1976) • --

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234 CONDUCTION PHENOMENA IN DIELECTRIC SOLIDS

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POLYMERS

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235

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236 CONDUCTION PHENOMENA IN DIELECTRIC SOLIDS

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186. P. Fischer and P. Rohl, "Thermally Stimulated and Isothermal Depolarization Currents in Low-Density Polyethylene," J. Polym. Sci. Polym. Phys. Ed. 14, 531-42 (1976). --

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198. J. Van Turnhout and P. H. Ong, "Dielectric Measure­ments at Ultralow Frequencies by Reheating of Electrets," 1975 Dielectric Materials, Measurements and Applications, 68-74 (1975).

199. R. R. Dils and P. S. Follansbee, "Surface Tempera­ture Sensors for Use In Harsh Environments," Electrochemical Society Spring Meeting, 225-6 (1976) .

200. V. R. K. Murthy and J. Sobhanadri, "Dielectric Properties of Some Nickel-Zinc Ferrites at Radio Frequency," Phys. Status Solidi A (Germany) 36, K133-5 (1976). --

201. B. Bartet, F. Buch, R. Freymann, and F. Mathey, "Preliminary Study of Dielectric Properties of Several Carboranes Relation to Their Infrared Absorption and Structure Modifications," C. R. Hebd. Seances Acad. Sci. B (France) 282, 531-3 (1976) .

202. A. Levstik, C. Filipic, R. Blinc, H. Arend, and R. Kind, "Dielectric Properties of (CJI2N+lNH3)2 CdCl4 and (NH3 - (CH2)N - NH3)CdC14 PerovsKite Layer Compounds,"Solid State Commun. 20, 127-30 (1976). --

238 CONDUCTION PHENOMENA IN DIELECTRIC SOLIDS

203. D. C. Johnston, "Superconducting and Normal State Properties of Lil+xTi2-x04 Spinel Compounds," J. Low Temp. Phys. 25, 145-7S (1976).

204. G. Jones, "Dielectric Studies of Zeolite Systems," J. Phys. and Chern Solids (GB) 37, 887-95 (1976).

205. T. Kojima and K. Kawabe, "Dielectric Properties of N-Methylbutylamide," Technol. Rep. Osaka Univ. (Japan) 26, 181-90 (1976).

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208. G. Rosse, Dang Tran Quan, and J. Pannetier, "Dielectric Properties of the Compounds of ZrF4 -YZ03 and ZrF4 - Yb203 Systems," J. Solid State Chern. 18, 155-8 (1976).

209. G. D. Nigam, "Dielectric Properties of Glycine Methyl Ester Monohydrochloride," Indian J. Pure and App1. Phys. 14, Z15-17 (1976).

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211. U. Rehberg, "Measurement of the Complex Dielectric Permittivity of the Anion Radical Complex Salt of Tetracyanochinodimethane with Methyltripheny11arsn­ium," Phys. Status Solidi A (Germany) 34, 573-82 (1976) . -

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214. K. Gesi, "Dielectric Study on the Phase Transitions in Triarnrnonium Hydrogen Disulfate," Phys. Status Solidi A (Germany) 33, 479-8Z (1976).

215. K. Deguchi and E. Nakamura, "Effect of Heat Treat­ment on Dielectric Properties of Ca2Sr(CZH5CO Z)6'" J. Phys. Soc. Jap. 40, 478-82 (1976).

216. M. Sugai, M. Takeuchi, and H. Nagosaka, "Effects of Moisture Sorption on the Rate of Charge Decay from Polymer Powder Layers," Jap. J. Appl. Phys. 15, 1563-4 (1976).

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217. E. I. Babadzhan, Yu. N. Lokhov, and V. S. Mospanov, "Possibility of Diagnostics of the Pre­breakdown State In the Surface Region of a Solid Transparent Dielectric Based on the Broadening of the Spectrum of a Giant Pulse and on the Change in the Brewster Angle," Sov. J. Quanttnn Electron ~, 301-5 (1976).

218. E. N. Yakov1ev, L. F. Vereshchagin, B. V. Vinogradev, and Yu. A. Timofeev, "Sequence of Di­electric-Metal Transitions in the Mega?ar Range of Static Pressures," Pis'Ma V. Zh. Tekh. Fiz. (USSR) 1, 570-4 (1976).

219. L. F. Vereshchagin, E. N. Yakov1ev, B. V. Vinogradov, and V. P. Sakum, "Recording of Dielec­tric-Metal Phase Transitions at High Pressures," lnstrum. and Exp. Tech. 18, 1579-81 (1975).

220. V. E. Dubrov, M. E. Levinshtern, and M. S. Shur, "Anomaly in the Dielectric Permeability in Meta1-Dielectric Transitions. Theory and Simulation," Sov. Phys. JETP lQ, 2014-24 (1976).

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222. T. Hatakeyama andY. Kagawa, "Optical and Dielec­tric Effects in Nematic Liquid Crystal Films Due to Ultrasound," J. Acoust. Soc. Japan 32, 92-8 (1976).

223. V. F. Korzo, "The Disruption of theStationary State and the Electrical Breakdown of Amorphous Dielectrics," Thin Solid Films (Switzerland) 34, 82 (1976). --

224. C. E. Pugh and M. Singh, "Couple Stresses in Elastic Dielectrics," Indian J. Pure and App1. Math 2, 530-42 (1974).

225. M. Rapos and M. Ruzinsky, "Complex Conductivity of Dielectric Structures and Dielectrics with Relaxation Polarization," E1ektrotech. Obz. (Czechoslovakia) &2, 68-72 (1976).

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