Typical Connection

HALF-BRIDGE DRIVERFeatures• Floating channel designed for bootstrap operation

Fully operational to +600VTolerant to negative transient voltagedV/dt immune

• Gate drive supply range from 10 to 20V• Undervoltage lockout for both channels• 3.3V, 5V and 15V input logic compatible• Cross-conduction prevention logic• Matched propagation delay for both channels• High side output in phase with IN input• Logic and power ground +/- 5V offset.• Internal 540ns dead-time, and programmable

up to 5us with one external RDT resistor (IR21094)• Lower di/dt gate driver for better noise immunity• Shut down input turns off both channels.

DescriptionThe IR2109(4)(S) are high voltage, high speed powerMOSFET and IGBT drivers with dependent high andlow side referenced output channels. Proprietary HVICand latch immune CMOS technologies enable rugge-dized monolithic construction. The logic input iscompatible with standard CMOS or LSTTL output,down to 3.3V logic. The output drivers feature a highpulse current buffer stage designed for minimum driver

IR21094

IR2109

Packages

IR2109(4) (S)

Data Sheet No. PD60163-T

VOFFSET 600V max.

IO+/- 120 mA / 250 mA

VOUT 10 - 20V

ton/off (typ.) 750 & 200 ns

Dead Time 540 ns (programmable up to 5uS for IR21094)

Product Summary

www.irf.com 1

VCC VB

VS

HO

LOCOM

IN

SDSD

IN

up to 600V

TOLOAD

VCC

IN

up to 600V

TOLOAD

VCC

VB

VS

HO

LO

COM

IN

DT

VSS

SD

VCC

SD

VSSRDT

8 Lead PDIP

14 Lead PDIP

8 Lead SOIC

14 Lead SOIC

cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in thehigh side configuration which operates up to 600 volts.

(Refer to Lead Assignments for correctconfiguration). This/These diagram(s) showelectrical connections only. Please refer to ourApplication Notes and DesignTips for propercircuit board layout.

IR2109(4) (S)

2 www.irf.com

Symbol Definition Min. Max. UnitsVB High side floating absolute voltage -0.3 625

VS High side floating supply offset voltage VB - 25 VB + 0.3

VHO High side floating output voltage VS - 0.3 VB + 0.3

VCC Low side and logic fixed supply voltage -0.3 25

VLO Low side output voltage -0.3 VCC + 0.3

DT Programmable dead-time pin voltage (IR21094 only) VSS - 0.3 VCC + 0.3

VIN Logic input voltage (IN & SD) VSS - 0.3 VCC + 0.3

VSS Logic ground (IR21094/IR21894 only) VCC - 25 VCC + 0.3

dVS/dt Allowable offset supply voltage transient — 50 V/ns

PD Package power dissipation @ TA ≤ +25°C (8 Lead PDIP) — 1.0

(8 Lead SOIC) — 0.625

(14 lead PDIP) — 1.6

(14 lead SOIC) — 1.0

RthJA Thermal resistance, junction to ambient (8 Lead PDIP) — 125

(8 Lead SOIC) — 200

(14 lead PDIP) — 75

(14 lead SOIC) — 120

TJ Junction temperature — 150

TS Storage temperature -50 150

TL Lead temperature (soldering, 10 seconds) — 300

Absolute Maximum RatingsAbsolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measuredunder board mounted and still air conditions.

V

°C

°C/W

W

IR2109(4) (S)

www.irf.com 3

Dynamic Electrical CharacteristicsVBIAS (VCC, VBS) = 15V, VSS = COM, CL = 1000 pF, TA = 25°C, DT = VSS unless otherwise specified.

Symbol Definition Min. Typ. Max. Units Test Conditionston Turn-on propagation delay — 750 950 VS = 0V

toff Turn-off propagation delay — 200 280 VS = 0V or 600V

tsd Shut-down propagation delay — 200 280

MT Delay matching, HS & LS turn-on/off — 0 70

tr Turn-on rise time — 150 220 VS = 0V

tf Turn-off fall time — 50 80 VS = 0V

DT Deadtime: LO turn-off to HO turn-on(DTLO-HO) & 400 540 680 RDT= 0

HO turn-off to LO turn-on (DTHO-LO) 4 5 6 usec RDT = 200k (IR21094)

MDT Deadtime matching = DTLO - HO - DTHO-LO — 0 60 RDT=0

— 0 600 RDT = 200k (IR21094)

nsec

nsec

Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design TipDT97-3 for more details).

VB High side floating supply absolute voltage VS + 10 VS + 20

VS High side floating supply offset voltage Note 1 600

VHO High side floating output voltage VS VB

VCC Low side and logic fixed supply voltage 10 20

VLO Low side output voltage 0 VCC

VIN Logic input voltage (IN & SD) VSS VCC

DT Programmable dead-time pin voltage (IR21094 only) VSS VCC

VSS Logic ground (IR21094 only) -5 5

TA Ambient temperature -40 125 °C

Symbol Definition Min. Max. Units

Recommended Operating ConditionsThe input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within therecommended conditions. The VS and VSS offset rating are tested with all supplies biased at 15V differential.

V

IR2109(4) (S)

4 www.irf.com

Static Electrical CharacteristicsVBIAS (VCC, VBS) = 15V, VSS = COM, DT= VSS and TA = 25°C unless otherwise specified. The VIL, VIH and IINparameters are referenced to VSS /COM and are applicable to the respective input leads: IN and SD. The VO, IO and Ronparameters are referenced to COM and are applicable to the respective output leads: HO and LO.

Symbol Definition Min. Typ. Max. Units Test ConditionsVIH Logic “1” input voltage for HO & logic “0” for LO 2.9 — — VCC = 10V to 20V

VIL Logic “0” input voltage for HO & logic “1” for LO — — 0.8 VCC = 10V to 20V

VSD,TH+ SD input positive going threshold 2.9 — — VCC = 10V to 20V

VSD,TH- SD input negative going threshold — — 0.8 VCC = 10V to 20V

VOH High level output voltage, VBIAS - VO — 0.8 1.4 IO = 20 mA

VOL Low level output voltage, VO — 0.3 0.6 IO = 20 mA

ILK Offset supply leakage current — — 50 VB = VS = 600V

IQBS Quiescent VBS supply current 20 75 130 VIN = 0V or 5V

IQCC Quiescent VCC supply current 0.4 1.0 1.6 mA VIN = 0V or 5V

RDT = 0

IIN+ Logic “1” input bias current — 5 20 IN = 5V, SD = 0V

IIN- Logic “0” input bias current — — 2 IN = 0V, SD = 5V

VCCUV+ VCC and VBS supply undervoltage positive going 8.0 8.9 9.8

VBSUV+ threshold

VCCUV- VCC and VBS supply undervoltage negative going 7.4 8.2 9.0

VBSUV- threshold

VCCUVH Hysteresis 0.3 0.7 —

VBSUVH

IO+ Output high short circuit pulsed vurrent 120 200 — VO = 0V, PW ≤ 10 µs

IO- Output low short circuit pulsed current 250 350 — VO = 15V,PW ≤ 10 µs

V

µA

V

µA

mA

IR2109(4) (S)

www.irf.com 5

Functional Block Diagrams

IR2109

SD

UVDETECT

DELAY COM

LO

VCC

IN VS

HO

VB

PULSEFILTERHV

LEVELSHIFTER

R

R

S

Q

UVDETECT

PULSEGENERATOR

VSS/COMLEVELSHIFT

VSS/COMLEVELSHIFT

+5V

DEADTIME

SD

UVDETECT

DELAY COM

LO

VCC

IN

DT

VSS

VS

HO

VB

PULSEFILTER

HVLEVEL

SHIFTER

R

R

S

Q

UVDETECT

PULSEGENERATOR

VSS/COMLEVELSHIFT

VSS/COMLEVELSHIFT

+5V

DEADTIME

IR21094

IR2109(4) (S)

6 www.irf.com

14 Lead PDIP 14 Lead SOIC

IR21094 IR21094S

Lead Assignments

8 Lead PDIP 8 Lead SOIC

1

2

3

4

8

7

6

5

VCC

IN

SD

COM

VB

HO

VS

LO

1

2

3

4

8

7

6

5

VCC

IN

SD

COM

VB

HO

VS

LO

1

2

3

4

5

6

7

14

13

12

11

10

9

8

VCC

IN

SD

DT

VSS

COM

LO

VB

HO

VS

1

2

3

4

5

6

7

14

13

12

11

10

9

8

VCC

IN

SD

DT

VSS

COM

LO

VB

HO

VS

Lead DefinitionsSymbol DescriptionIN Logic input for high and low side gate driver outputs (HO and LO), in phase with HO (referenced to COM

for IR2109 and VSS for IR21094)

SD Logic input for shutdown (referenced to COM for IR2109 and VSS for IR21094)

DT Programmable dead-time lead, referenced to VSS. (IR21094 only)

VSS Logic Ground (21094 only)

VB High side floating supply

HO High side gate drive output

VS High side floating supply return

VCC Low side and logic fixed supply

LO Low side gate drive output

COM Low side return

IR2109 IR2109S

IR2109(4) (S)

www.irf.com 7

Figure 1. Input/Output Timing Diagram Figure 2. Switching Time Waveform Definitions

Figure 4. Deadtime Waveform Definitions

IN

HO

50% 50%

90%

10%

LO 90%

10%

DTLO-HO

DTLO-HOMDT= - DTHO-LO

DTHO-LO

SD

IN

HO

LO

IN(HO)

trton tftoff

LOHO

50% 50%

90% 90%

10% 10%

IN(LO)

Figure 3. Shutdown Waveform Definitions

SD

tsd

HOLO

50%

90%

Figure 5. Delay Matching Waveform Definitions

HO

50% 50%

10%

LO

90%

MT

HOLO

MT

IN (LO)

IN (HO)

IR2109(4) (S)

8 www.irf.com

500

700

900

1100

1300

-50 -25 0 25 50 75 100 125

Temperature (oC)

Turn

-on

Prop

agat

ion

Dela

y (n

s)

Typ.

M ax

500

700

900

1100

1300

10 12 14 16 18 20

VBIAS Supply Voltage (V)

Turn

-on

Prop

agat

ion

Dela

y (n

s)

Typ.

M ax.

0

100

200

300

400

500

-50 -25 0 25 50 75 100 125

Temperature (oC)

Turn

-off

Pro

paga

tion

Dela

y (n

s)

M ax.

Typ.

0

100

200

300

400

500

10 12 14 16 18 20

VBIAS Supply Voltage (V)

Turn

-off

Pro

paga

tion

Dela

y (n

s)

Typ.

M ax.

Figure 6A. Turn-on Propagation Delayvs. Temperature

Figure 6B. Turn-on Propagation Delayvs. Supply Voltage

Figure 7A. Turn-off Propagation Delayvs. Temperature

Figure 7B. Turn-off Propagation Delayvs. Supply Voltage

IR2109(4) (S)

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0

100

200

300

400

500

-50 -25 0 25 50 75 100 125

Temperature (oC)

SD P

ropa

gatio

n De

lay

(ns)

M ax.

Typ.

0

100

200

300

400

500

10 12 14 16 18 20

VBIAS Supply Voltage (V)

SD P

ropa

gatio

n De

lay

(ns)

Typ.

M ax.

0

100

200

300

400

500

-50 -25 0 25 50 75 100 125

Temperature (oC)

Turn

-on

Rise

Tim

e (n

s)

M ax.

Typ.

0

100

200

300

400

500

10 12 14 16 18 20

VBIAS Supply Voltage (V)

Turn

-on

Rise

Tim

e (n

s)

Typ.

M ax.

Figure 8A. SD Propagation Delayvs. Temperature

Figure 8B. SD Propagation Delayvs. Supply Voltage

Figure 9A. Turn-on Rise Timevs. Temperature

Figure 9B. Turn-on Rise Timevs. Supply Voltage

IR2109(4) (S)

10 www.irf.com

0

50

100

150

200

-50 -25 0 25 50 75 100 125

Temperature (oC)

Turn

-off

Fal

l Tim

e (n

s)

M ax.

Typ.

0

50

100

150

200

10 12 14 16 18 20

VBIAS Supply Voltage (V)

Turn

-off

Fal

l Tim

e (n

s)

Typ.

M ax.

200

400

600

800

1000

-50 -25 0 25 50 75 100 125

Temperature (oC)

Dead

time

(ns)

M in.

Typ.

M ax.

200

400

600

800

1000

10 12 14 16 18 20

VBIAS Supply Voltage (V)

Dead

time

(ns)

M ax.

Typ.

M in.

Figure 10A. Turn-off Fall Timevs. Temperature

Figure 10B. Turn-off Fall Timevs. Supply Voltage

Figure 11A. Deadtime vs. Temperature Figure 11B. Deadtime vs. Supply Voltage

IR2109(4) (S)

www.irf.com 11

0

1

2

3

4

5

-50 -25 0 25 50 75 100 125

Temperature (oC)Lo

gic

"1" I

nput

Vol

tage

(V)

M ax.

0

1

2

3

4

5

6

7

0 50 100 150 200

RDT (KΩ)

Dead

time

(s) Typ.

M ax.

M in.

0

1

2

3

4

5

10 12 14 16 18 20

VCC Supply Voltage (V)

Logi

c "1

" Inp

ut V

olta

ge (V

)

M ax.

0

1

2

3

4

5

-50 -25 0 25 50 75 100 125

Temperature (oC)

Logi

c "0

" Inp

ut V

olta

ge (V

)

M in.

Figure 11C. Deadtime vs. RDT(IR21094 only)

Figure 12A. Logic “1” Input Voltagevs. Temperature

Figure 12B. Logic “1” Input Voltagevs. Supply Voltage

Figure 13A. Logic “0” Input Voltagevs. Temperature

IR2109(4) (S)

12 www.irf.com

0

1

2

3

4

5

10 12 14 16 18 20

VCC Supply Voltage (V)

Logi

c "0

" Inp

ut V

olta

ge (V

)

M in.

0

1

2

3

4

5

-50 -25 0 25 50 75 100 125

Temperature (oC)

SD P

ositiv

e G

oing

Thr

esho

ld (V

)

M ax.

0

1

2

3

4

5

10 12 14 16 18 20

VCC Supply Voltage (V)

SD P

ositiv

e G

oing

Thr

esho

ld (V

)

M ax.

0

1

2

3

4

5

-50 -25 0 25 50 75 100 125

Temperature (oC)

SD N

egat

ive

Goi

ng T

hres

hold

(V)

M in.

Figure 13B. Logic “0” Input Currentvs. Supply Voltage

Figure 14A. SD Positive Going Thresholdvs. Temperature

Figure 14B. SD Positive Going Thresholdvs. Supply Voltage

Figure 15A. SD Negative Going Thresholdvs. Temperature

IR2109(4) (S)

www.irf.com 13

0

0.3

0.6

0.9

1.2

1.5

-50 -25 0 25 50 75 100 125

Temperature (oC)

Low

Lev

el O

utpu

t Vol

tage

(V)

Typ.

M ax.

0

1

2

3

4

5

10 12 14 16 18 20

VCC Supply Voltage (V)

SD N

egat

ive

Goi

ng T

hres

hold

(V)

M in.

0

1

2

3

4

-50 -25 0 25 50 75 100 125

Temperature (oC)

Hig

h Le

vel O

utpu

t Vol

tage

(V)

Typ.

M ax.

0

1

2

3

4

10 12 14 16 18 20

VBIAS Supply Voltage (V)

Hig

h Le

vel O

utpu

t Vol

tage

(V)

Typ.

M ax.

Figure 15B. SD Negative Going Thresholdvs. Supply Voltage

Figure 16A. High Level Output Voltagevs. Temperature

Figure 16B. High Level Output Voltagevs. Supply Voltage

Figure 17A. Low Level Output Voltagevs. Temperature

IR2109(4) (S)

14 www.irf.com

0

100

200

300

400

500

-50 -25 0 25 50 75 100 125

Temperature (oC)

Offs

et S

uppl

y Le

akag

e C

urre

nt (

A)M ax.

0

100

200

300

400

500

0 100 200 300 400 500 600

VB B o o s t V o lta g e (V )

Offset

Supp

ly Leak

age Current (

A)

M ax.

0

100

200

300

400

-50 -25 0 25 50 75 100 125

Te m p e ra tu re (oC )

VB

S S

upply C

urre

nt (

A)

Typ.

M ax.

M in.

0

0.3

0.6

0.9

1.2

1.5

10 12 14 16 18 20

VBIAS Supply Voltage (V)

Low

Lev

el O

utpu

t Vol

tage

(V)

Typ.

M ax.

Figure 17B. Low Level Output Voltagevs. Supply Voltage

Figure 18A. Offset Supply Leakage Currentvs. Temperature

igure 18B. Offset Supply Leakage Currentvs. Boost Voltage

Figure 19A. VBS Supply Currentvs. Temperature

IR2109(4) (S)

www.irf.com 15

0

100

200

300

400

10 12 14 16 18 20

V BS S upply V oltage (V )

VB

S S

upply C

urrent (

A)

Typ.

M ax.

M in.

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-50 -25 0 25 50 75 100 125

Tem perature (oC )

Vcc Supply Cur

rent (mA)

M ax.

Typ.

M in.

0

10

20

30

40

50

60

-50 -25 0 25 50 75 100 125

Temperature (oC)

Logi

c "1

" Inp

ut C

urre

nt (

A)

Typ.

M ax.

i 21 i 1 C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

10 12 14 16 18 20

VCC Supply Voltage (V)

VC

C S

uppl

y Cu

rren

t (m

A)

M ax.

Typ.

M in.

Figure 19B. VBS Supply Currentvs. Supply Voltage

Figure 20A. VCC Supply Currentvs. Temperature

Figure 20B. VCC Supply Currentvs. VCC Supply Voltage

Figure 21A. Logic “1” Input Currentvs. Temperature

IR2109(4) (S)

16 www.irf.com

0

10

20

30

40

50

60

10 12 14 16 18 20

VCC Supply Voltage (V)

Logi

c "1

" Inp

ut C

urre

nt (

A)

M ax.

Typ.

0

1

2

3

4

5

-50 -25 0 25 50 75 100 125

Temperature (oC)

Logi

c "0

" Inp

ut C

urre

nt (

A)

M ax.

7

8

9

10

11

12

-50 -25 0 25 50 75 100 125

Temperature (oC)

VC

C U

VLO

Thr

esho

ld (+

) (V

)

Typ.

M ax.

M in.

0

1

2

3

4

5

10 12 14 16 18 20

VCC Supply Voltage (V)

Logi

c "0

" Inp

ut C

urre

nt (

A)

M ax.

Figure 21B. Logic “1” Input Currentvs. Supply Voltage

Figure 22A. Logic “0” Input Currentvs. Temperature

Figure 22B. Logic “0” Input Currenttvs. Supply Voltage

Figure 23. VCC Undervoltage Threshold (+)vs. Temperature

IR2109(4) (S)

www.irf.com 17

6

7

8

9

10

11

-50 -25 0 25 50 75 100 125

Temperature (oC)

VC

C U

VLO

Thr

esho

ld (-

) (V

)

Typ.

M ax.

M in.

7

8

9

10

11

12

-50 -25 0 25 50 75 100 125

Temperature (oC)

VB

S U

VLO

Thr

esho

ld (+

) (V

)

Typ.

M ax.

M in.

6

7

8

9

10

11

-50 -25 0 25 50 75 100 125

Temperature (oC)

VB

S U

VLO

Thr

esho

ld (-

) (V

)

Typ.

M ax.

M in.

0

100

200

300

400

500

-50 -25 0 25 50 75 100 125

Temperature (oC)

Out

put S

ourc

e Cu

rren

t (A

)

Typ.

M in.

Figure 24. VCC Undervoltage Threshold (-)vs. Temperature

Figure 25. VBS Undervoltage Threshold (+)vs. Temperature

Figure 26. VBS Undervoltage Threshold (-)vs. Temperature

Figure 27A. Output Source Currentvs. Temperature

IR2109(4) (S)

18 www.irf.com

0

100

200

300

400

500

10 12 14 16 18 20

VBIAS Supply Voltage (V)

Out

put S

ourc

e Cu

rren

t (A

)

Typ.

M in.0

100

200

300

400

500

600

-50 -25 0 25 50 75 100 125

Temperature (oC)

Out

put S

ink

Curr

ent (

A)

Typ.

M in.

0

100

200

300

400

500

600

10 12 14 16 18 20

VBIAS Supply Voltage (V)

Out

put S

ink

Curr

ent (

A)

Typ.

M in.

-10

-8

-6

-4

-2

0

10 12 14 16 18 20

VBS Flouting Supply Voltage (V)

VS O

ffset

Sup

ply

Volta

ge (V

)

Typ.

Figure 27B. Output Source Currentvs. Supply Voltage

Figure 28A. Output Sink Currentvs. Temperature

Figure 28B. Output Sink Currenttvs. Supply Voltage

Figure 29. Maximum VS Negative Offsetvs. Supply Voltage

IR2109(4) (S)

www.irf.com 19

Figure 33. IR2109 vs Frequency (IRFPE50)Rgate = 10ΩΩΩΩΩ, VCC = 15V

Figure 30. IR2109 vs Frequency (IRFBC20)Rgate = 33ΩΩΩΩΩ, VCC = 15V

20

40

60

80

100

120

140

1 10 100 1000

Frequency (KHz)

Tem

prat

ure

(o C)

70V

140V

0V

Figure 31. IR2109 vs Frequency (IRFBC30)Rgate = 22ΩΩΩΩΩ, VCC = 15V

20

40

60

80

100

120

140

1 10 100 1000

Frequency (KHz)

Tem

pera

ture

(o C)

140V

0V

70V

20

40

60

80

100

120

140

1 10 100 1000

Frequency (KHz)

Tem

pera

ture

(o C)

140V

70V

0V

Figure 32. IR2109 vs Frequency (IRFBC40)Rgate = 15ΩΩΩΩΩ, VCC = 15V

20

40

60

80

100

120

140

1 10 100 1000

Frequency (KHz)

Tem

pera

ture

(o C)

0V

140V 70V

IR2109(4) (S)

20 www.irf.com

20

40

60

80

100

120

140

1 10 100 1000

Frequency (KHz)

Tem

pera

ture

(o C)

140V

0V

70V

Figure 34. IR21094 vs. Frequency (IRFBC20), Rgate=33Ω , VCC=15V

20

40

60

80

100

120

140

1 10 100 1000

Frequency (KHz)

Tem

pera

ture

(o C)

140V

70V

0V

Figure 35. IR21094 vs. Frequency (IRFBC30), Rgate=22Ω , VCC=15V

20

40

60

80

100

120

140

1 10 100 1000

Frequency (KHz)

Tem

pera

ture

(o C)

140V

70V

0V

Figure 36. IR21094 vs. Frequency (IRFBC40), Rgate=15Ω , VCC=15V

20

40

60

80

100

120

140

1 10 100 1000

Frequency (KHz)

Tem

pera

ture

(o C)

70V

0V

140V

Figure 37. IR21094 vs. Frequency (IRFPE50), Rgate=10Ω , VCC=15V

IR2109(4) (S)

www.irf.com 21

20

40

60

80

100

120

140

1 10 100 1000

Frequency (KHz)

Tem

pera

ture

(o C)

0V

70V

140V

Figure 38. IR2109S vs. Frequency (IRFBC20), Rgate=33Ω , VCC=15V

20

40

60

80

100

120

140

1 10 100 1000

Frequency (KHz)

Tem

pera

ture

(o C) 140V

70V

0V

Figure 39. IR2109S vs. Frequency (IRFBC30), Rgate=22Ω , VCC=15V

20

40

60

80

100

120

140

1 10 100 1000

Frequency (KHz)

Tem

pret

ure

(o C)

140V 70V 0V

Figure 41. IR2109S vs. Frequency (IRFPE50), Rgate=10Ω , VCC=15V

20

40

60

80

100

120

140

1 10 100 1000

Frequency (KHz)

Tem

pera

ture

(o C)

0V

140V 70V

Figure 40. IR2109S vs. Frequency (IRFBC40), Rgate=15Ω , VCC=15V

IR2109(4) (S)

22 www.irf.com

20

40

60

80

100

120

140

1 10 100 1000

Frequency (KHz)

Tem

pera

ture

(o C)

140V

70V

0V

20

40

60

80

100

120

140

1 10 100 1000

Frequency (KHz)

Tem

pera

ture

(o C)

140V 70V

0V

Figure 44. IR21094S vs. Frequency (IRFBC40), Rgate=15Ω , VCC=15V

Figure 45. IR21094S vs. Frequency (IRFPE50), Rgate=10Ω , VCC=15V

20

40

60

80

100

120

140

1 10 100 1000

Frequency (KHz)

Tem

pera

ture

(o C)

140V

70V

0V

Figure 42. IR21094S vs. Frequency (IRFBC20), Rgate=33Ω , VCC=15V

20

40

60

80

100

120

140

1 10 100 1000

Frequency (KHz)

Tem

pera

ture

(o C)

140V

70V

0V

Figure 43. IR21094S vs. Frequency (IRFBC30), Rgate=22Ω , VCC=15V

IR2109(4) (S)

www.irf.com 23

Case Outlines

01-602701-0021 11 (MS-012AA)8 Lead SOIC

8 7

5

6 5

D B

E

A

e6X

H

0.25 [.010] A

6

431 2

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.

NOTES:1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.2. CONTROLLING DIMENSION: MILLIMETER3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

7

K x 45°

8X L 8X c

y

FOOTPRINT

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050] 8X 1.78 [.070]

5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.

MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].

0.25 [.010] C A B

e1A

A18X b

C

0.10 [.004]

e 1

D

E

y

b

A

A1

HK

L

.189

.1497

0°

.013

.050 BASIC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.800.25

0.40

0°

1.27 BASIC

5.00

4.00

0.51

1.75

0.25

6.200.50

1.27

MIN MAXMILLIMETERSINCHESMIN MAX

DIM

8°

e

c .0075 .0098 0.19 0.25

.025 BASIC 0.635 BASIC

01-601401-3003 01 (MS-001AB)8 Lead PDIP

IR2109(4) (S)

24 www.irf.com

01-601001-3002 03 (MS-001AC)14 Lead PDIP

01-601901-3063 00 (MS-012AB)14 Lead SOIC (narrow body)

Data and specifications subject to change without notice. 7/11/2003