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Research Portfolio ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING Research Portfolio Dr. Lynn Fuller, Dr. Ivan Puchades and Students on Team Galt © October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 1 Rochester Institute of Technology Microelectronic Engineering Webpage: http://people.rit.edu/lffeee Department of Electrical and Microelectronic Engineering Rochester Institute of Technology 82 Lomb Memorial Drive Rochester, NY 14623-5604 Tel (585) 475-2035 Email: [email protected] Department webpage: http://www.microe.rit.edu 10-17-2011Summary.ppt

Dr Fuller Research Portfolio.ppt - RIT - People Portfolio DR. IVAN PUCHADES Industry Experience: National Semiconductor, Maine Freescale Semiconductor, Phoenix Impact Technologies,

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Research Portfolio

ROCHESTER INSTITUTE OF TECHNOLOGYMICROELECTRONIC ENGINEERING

Research Portfolio

Dr. Lynn Fuller, Dr. Ivan Puchadesand Students on Team Galt

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 1

Rochester Institute of Technology

Microelectronic Engineering

Webpage: http://people.rit.edu/lffeeeDepartment of Electrical and Microelectronic Engineering

Rochester Institute of Technology82 Lomb Memorial DriveRochester, NY 14623-5604

Tel (585) 475-2035Email: [email protected]

Department webpage: http://www.microe.rit.edu

10-17-2011Summary.ppt

Research Portfolio

DR. LYNN FULLER

Email: [email protected]

Webpage: http://people.rit.edu/lffeee

Google Analytics

Monthly Report

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 2

Rochester Institute of Technology

Microelectronic Engineering

Professor

IEEE Fellow

Eisenhart Outstanding Teacher

KGCOE Outstanding Alumnus

Electrical Engineering

Microelectronic Engineering

Microsystems Engineering

Visitors to Dr. Fuller’s WebPageApril 14 – May 14, 2011

Research Portfolio

DR. IVAN PUCHADES

Industry Experience:National Semiconductor, MaineFreescale Semiconductor, PhoenixImpact Technologies, LLC, RochesterUniversity of Barcelona

At RIT Teaches: MEMSMicroelectronics, Circuits

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 3

Rochester Institute of Technology

Microelectronic Engineering

Research Assistant Professor

IEEE Member

Dr. Renan Turkman Scholar

MS Electrical Engineering

BS Microelectronic Engineering

PhD Microsystems Engineering

Microelectronics, Circuits Lectures and LabsTeam Galt Research

From: Barcelona, Spain

Research Portfolio

TEAM GALT

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 4

Rochester Institute of Technology

Microelectronic Engineering

B.S., M.S., Ph.D., students from EE, ME, MicroE, CE, Materials Science Heidi, Murat

Tal, Lynn, Ellen Sedlack, Christian, Artur, Ivan, Renat

Research Portfolio

SMFL Semiconductor and Microsystems Fabrication Lab

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 5

Rochester Institute of Technology

Microelectronic Engineering

15,000+ sq. ft. Clean room

Complete Equipment Set

for CMOS and MEMS

Research Portfolio

TEAM’S FUNDED RESEARCH

Eastman Kodak Co. – Ink Jet Head with 30 rows and 47 columnsBausch and Lomb, Inc. – Wireless Pressure Sensors for GlaucomaImpact Technology, LLC – Multisensor MEMS Oil Quality SensorNYSERDA – Multisensor MEMS Oil Quality SensorDOD Army – Multisensor MEMS Drinking Water Quality Sensor (Dr WatSen)DOD Navy – MEMS Multi-Sensor (PRISM)DOD Air Force – Aircraft Wireless Brake & Tire Monitor (BATMON)

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 6

Rochester Institute of Technology

Microelectronic Engineering

DOD Air Force – Aircraft Wireless Brake & Tire Monitor (BATMON)DOD DARPA - Blast Dosimeter, $998K (Co-PI with Dr. Borkholder)DOD Army - MEMS Inertial Guidance System (Co-PI with Dr. Crassidis)U of R Medical Center - Energy Harvesting and Motion Sensing Pacemaker LeadsNIH/U of Hawaii – ISFET BiosensorsBP – Beta Voltaic Energy HarvestingRIT – MEMS Viscosity Sensor

3 months to 2 years, $10K to $1,000K each

Research Portfolio

RESEARCH AREAS

BioProbes Energy Harvester

MEMS SensorsMEMS Multisensor ChipsChemical Sensors

Microcontrollers in MicrosystemsWireless Microsystems

Energy Harvesting

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 7

Rochester Institute of Technology

Microelectronic Engineering

CMOS

Energy Harvesting

Bio MEMS

CMOS Circuit DesignCMOS Fabrication

Packaging

Research Portfolio

MEMS SENSORS / MULTI SENSORS

Temperature ViscosityAccelerationHumiditypHCHEMFETsChem Resistors

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 8

Rochester Institute of Technology

Microelectronic Engineering Accelerometer

Viscocity SensorChem ResistorsLiquid LevelPressureStrainLightGas FlowElectrochemical Spectroscopic Impedance

Research Portfolio

CHEMICAL SENSORS

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 9

Rochester Institute of Technology

Microelectronic Engineering

Research Portfolio

NAIL POLISH / CARBON BLACKRESPONSE TO ACETONE AND ISOPROPANOL

30s off, 30s on, 60s off, 30s on, 30s off

0.5 ml Acetone/ 125 ml bottle = 4000 ppm

Resistance goes from ~100 ohms (no vapor)

to ~ 100,000 ohms (with vapor)

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 10

Rochester Institute of Technology

Microelectronic Engineering

30s off, 30s on, 60s off, 30s on, 30s off

Isopropanol ~ 10,000 ppm

No Response

Research Portfolio

MEMS MULTI-SENSOR CHIP’s

Fabricated Multi Sensor Chips

Humidity Sensor

Cleanroom Bay Environment Sensor

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 11

Rochester Institute of Technology

Microelectronic Engineering

Light Sensor

Pressure Sensor

Temperature Sensor

Heidi Purrington

Research Portfolio

OIL QUALITY MEMS MULTI-SENSOR

Photo Diode

Diffused HeaterActuator

Pressure Sensor

Water in Oil

EIS

5m

m x

5m

m

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 12

Rochester Institute of Technology

Microelectronic Engineering

DiodeTemperatureSensor

EIS

Zero-Span Compensated Pressure Sensor over

Temperature

0.00

5.00

10.00

15.00

20.00

25.00

30.00

35.00

40.00

45.00

50.00

0 5 10 15 20

Pressure [psi]

Ou

tpu

t V

olt

ag

e [

mV

]

T = 27 C T = 57 C T = 84 C

5m

m x

5m

m

Oil with 1% SootPressure Study

Picture of MEMS Multisensor

Temp Sensor Test

Research Portfolio

MEMS Universal Fluid Interrogation Sensor (MUFINS)

1

No

rma

lize

d F

req

ue

ncy .

0.8

0.9

1

Temperature ( °C )

D25-norm-T

Q normal

57 42 36 32 29

pH

Viscosity500

600

700

800

20 25 30 35 40 45

Vou

t (m

V)

Temperature

1000

Vou

t (m

V)

Turbidity

Fluid Level and Conductivity

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 13

Rochester Institute of Technology

Microelectronic Engineering

0.8

0.85

0.9

0.95

0 100 200 300 400 500 600

Kinematic Viscosity ( cSt )

No

rma

lize

d F

req

ue

ncy .

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

No

rma

lize

d Q

. Q normal

Spectroscopic impedanceZe ro-Spa n Com pe nsa te d Pre ssure S e nsor ove r

Te m pe ra ture

0.00

5.00

10.00

15.00

20.00

25.00

30.00

35.00

40.00

45.00

50.00

0 5 10 15 20

Pr e s s ur e [ps i]

Ou

tpu

t V

olt

ag

e [

mV

]

T = 27 C T = 57 C T = 84 C

Pressure

0

500

1000

0 2505007501000

Vou

t (m

V)

NTU

Applications:

•Drinking water

•Automobile engine oil

•Industrial Fluids

Research Portfolio

MICROSYSTEM

Team Galt’s definition for Microsystems is the integration of MEMS sensors and actuators with CMOS electronics to provide solutions for a wide variety of applications including automotive, military, aerospace, consumer and biomedical.

PowerManagement

Battery

USB Power

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 14

Rochester Institute of Technology

Microelectronic Engineering

µP....

.

.

.

.

PowerManagement

Co

mm

un

icat

ion

Sig

nal

C

on

dit

ion

ing

otherMEMS

USB Power

Energy Harvester

USB, WiFi

CAN (other)

Wireless

World Wide Web

Research Portfolio

DEVELOP PCB PROTOTYPE CAPABILITY

Prototype evaluation: breadboard sensors and signal processing electronics at the PCB level to evaluate different approaches for realizing microsystems.

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 15

Rochester Institute of Technology

Microelectronic Engineering

Jirachai, Murat Baylav

Jennifer AlbrechtJirachai Dan Smith

Research Portfolio

MEMS MULTI-SENSOR CHIP’s

1-AxisAccelerometerTemperature SensorHumidity SensorX & Y Strain Sensor

Prognostic Integrated Sensory MEMS (PRISM)

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 16

Rochester Institute of Technology

Microelectronic Engineering

4mm x 4mm Chip

Health Management Solution to Predict

Equipment Performance and Readiness

Research Portfolio

MULTISENSOR MICROSYSTEM

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 17

Rochester Institute of Technology

Microelectronic Engineering

MEMS Multisensor Chip

Acceleration (shock)

Temperature, Humidity

Back

Front

µP

Research Portfolio

TEAM GALT SUPPORTS OTHER FACULTY PROJECTS

Dr. David Borkholder – PI

Blast Dosimeter / DARPA

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 18

Rochester Institute of Technology

Microelectronic Engineering

Research Portfolio

HIGH VOLTAGE TRANSISTOR ARRAY

30 Rows, 47 Columns, 4 inch, Ink Jet Array

Design and Fabrication of a Custom NMOS Transistors with a 45 Volt High Side Breakdown Voltage, Integrate into a Large Array Ink Jet Print Head

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 19

Rochester Institute of Technology

Microelectronic Engineering

Source

GateDrain

30 Rows, 47 Columns, 4 inch, Ink Jet Array

45 Volt NMOSFET 16 Masks, 8 at 1X, 8 at 5X

Single Ink Jet

Research Portfolio

HIGH VOLTAGE TRANSISTOR ARRAY

Designed High Voltage TransistorDelivered 16 Masks

1X, 5X, 5”sq., 6”sq.,90 mils, 250 mils thick

Delivered 20 Wafers4 inch by 1 inch chips

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 20

Rochester Institute of Technology

Microelectronic Engineering

4 inch by 1 inch chips(dark field stitching, clear field 1X)

NMOS Vt = 1.12 voltsI drive = 65 mAI leak <0.5 µA Maximum VDS > 45 Volts

Research Portfolio

U OF HAWAII BIOSENSORS - INTRODUCTION

Nitride Gate

NFET

Poly Gate

NFET

P++ Substrate

Contact

This project involves the design and fabrication of NMOS FETS with specific structure and electrical characteristics. Completed devices will have biomolecules attached to the gate materials resulting in specific changes in drain current.

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 21

Rochester Institute of Technology

Microelectronic Engineering

Substrate 10 ohm-cm

No light

More light

Most light

N+ D/SP+

+

NFETNFET Contact

Ion implanted

P-channel

Field Oxide

N+ D/S

2µm PECVD Nitride

0.3µm LPCVD

Nitride

N+ poly Aluminum

Research Portfolio

ISFETS FOR WATER pH AND CHLORINE

ISFET

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 22

Rochester Institute of Technology

Microelectronic Engineering

PACKAGED ISFET

Family of curves with VS=0V, VB=0 to -0.5V and VD=0 to 5VID=33.4 µA when VS=VB=0V

and VD=2.5V

Research Portfolio

ENERGY HARVESTING

Green Optimized Photocell

Indirect Conversion of Radiation for 20 Year-Life Batteries

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 23

Rochester Institute of Technology

Microelectronic Engineering

1.6 cm

Gaseous Tritium Light Source (GTLS)

(GTLS) – Phosphor Coat Glass Vial with Tritium Inside

Tritium: Radioactive Isotope of Hydrogen, 3H, 12year half life

Emits Electrons Through Beta Decay

Electrons Interact With Phosphor Material

Green Light is Emitted (Radio luminescence)

Photo Detector Captures Light and Converts to Energy

Energy Management Electronics

Stores Energy in a Super Capacitor

Research Portfolio

VIBRATION ENERGY HARVESTER

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 24

Rochester Institute of Technology

Microelectronic Engineering

Dr. Denis Cormier

3-D Printer

Brinkman Lab at RIT

Research Portfolio

BLUE TOOTH WIRELESS PRESSURE SENSOR

New testchip and design methodology for design of analog and digital circuits to be integrated with microsystems.

0000000001

3 V

1 1

RCLKSCLK

10-bit (Left) Shift Register

Blu

eto

oth

Seri

al

RF

Lin

k

CTS

TX

RX

RTS

2.4 kHz

5 Hz

Stop Bit

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 25

Rochester Institute of Technology

Microelectronic Engineering

CCLK

0000000001

00000000

CCLR

_____

RCLK8-bit

Binary CounterB

lueto

oth

Seri

al

RTS

StartBit

Internal Counter

000000 00RC Oscillator

Sensor

Research Portfolio

WIRELESS MICROSYSTEMS

Capacitor Sensor

BluetoothTransceiver

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 26

Rochester Institute of Technology

Microelectronic Engineering

Wireless PlatformBreadboard

5” x 8” Breadboard

1” x 1” PCB2mm x 3mm

Custom CMOS & MEMS

2.5” x 3” BT-Arduino

Research Portfolio

DEVELOP MEMS PACKAGING

Packaging of MEMS and Microsystems: Many of the devices we are now making need to be packaged to be tested. Some devices have a large number of connections thus probing is difficult. Other devices need to be interfaced with physical parameters such as pressure, gas flow, acceleration, etc. The goal is to develop flexible, low cost, approaches for creating packages for testing and evaluation. Final custom package design concepts and materials are developed and suppliers found.

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 27

Rochester Institute of Technology

Microelectronic Engineering

Final custom package design concepts and materials are developed and suppliers found.

Packaged Gas Flow SensorPackaging of Pressure

Sensor

George Manos

Research Portfolio

PACKAGE TECHNOLOGY DEVELOPMENT

substrate

TaNAlpha Ta Ta Power,

Time t (Å) Rs (Ω/sq)rho (Ω

cm) CRT MaterialNo TaN seed* 2725 6.55 178.0E-6 -250ppm Beta-Ta

500W, 15 min 2818 7.65 215.6E-6 - 165ppm Beta-Ta

200W, 5min 500 8.74 43.7E-6 + 900ppm Alpha-Ta

200W, 15min 1200 2.73 32.8E-6 + 900ppm Alpha-Ta

200W, 30min 2200 1.6 35.2E-6 + 750ppm Alpha-Ta

MATERIALS SELECTION, PROCESSING, EVALUATION

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 28

Rochester Institute of Technology

Microelectronic Engineering

Solder Bump

Flip Chip

200W, 30min 2200 1.6 35.2E-6 + 750ppm Alpha-Ta

Wire BondINTERCONNECT TECHNOLOGY

Research Portfolio

PACKAGE CONCEPT DESIGN

The microchip (4mm x 4mm) will be mounted on a PC board with voltage regulator chip and a few other components. Four wires will be needed (Power, Ground, Serial Communication) so the board will be soldered to a connector in a housing.

Connector Sealant Signal ConditioningElectronics

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 29

Rochester Institute of Technology

Microelectronic Engineering

Housing

µP1 ½

” MEMSSensor Chip

PCB

Electronics

Research Portfolio

PACKAGING CONCEPT DESIGN

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 30

Rochester Institute of Technology

Microelectronic Engineering

Battery USB Connection

MEMS PCB

Flex Circuit

Research Portfolio

RESULTING FINAL MICROSYSTEM PACKAGES

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 31

Rochester Institute of Technology

Microelectronic Engineering

Research Portfolio

WHO IS JOHN GALT?

John Galt is a fictitious character in Ayn Rand's 1957 classic novel Atlas Shrugged. He was an engineer who challenged his contemporaries to rise above mediocrity and to think outside the box. The question “Who is John Galt?” is posed to express frustration with being stuck with the commonplace, and the answer is really the spirit of challenging and rising above expectations.

In the novel, John Galt invented a revolutionary new motor, which was powered by

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 32

Rochester Institute of Technology

Microelectronic Engineering

In the novel, John Galt invented a revolutionary new motor, which was powered by ambient static electricity. Team Galt is therefore an appropriate name for Dr. Fuller’s MEMS research team at RIT. Integrating CMOS with MEMS is an enabling capability that will allow the team to develop new MEMS devices for a wide range of applications, and the concept of energy harvesting can be paralleled to the work of John Galt.

Heidi Purrington

Research Portfolio

TEAM GALT - ALUMNI

Heidi Purrington, 2010 – Fairchild, S. Portland, MaineMurat Baylav, 2010 –Intel, Phoenix, ArizonaJake Leveto, 2010 – Small Business OwnerEllen Sedlack, 2011 – Micron, Boise, IdahoTal Nagourney, 2011 – Ph.D. Student at Cornell UniversityJeff Traikoff 2011- Intel, Phoenix ArizonaChristian Seemayer, 2012 –

© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 33

Rochester Institute of Technology

Microelectronic Engineering

Christian Seemayer, 2012 –Dan Smith, 2012 –Nicholas Liotta, 2012 –Jirachai Getpreecharsawas –Jen Albrecht –Ellie Bryon -