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Research Portfolio
ROCHESTER INSTITUTE OF TECHNOLOGYMICROELECTRONIC ENGINEERING
Research Portfolio
Dr. Lynn Fuller, Dr. Ivan Puchadesand Students on Team Galt
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 1
Rochester Institute of Technology
Microelectronic Engineering
Webpage: http://people.rit.edu/lffeeeDepartment of Electrical and Microelectronic Engineering
Rochester Institute of Technology82 Lomb Memorial DriveRochester, NY 14623-5604
Tel (585) 475-2035Email: [email protected]
Department webpage: http://www.microe.rit.edu
10-17-2011Summary.ppt
Research Portfolio
DR. LYNN FULLER
Email: [email protected]
Webpage: http://people.rit.edu/lffeee
Google Analytics
Monthly Report
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 2
Rochester Institute of Technology
Microelectronic Engineering
Professor
IEEE Fellow
Eisenhart Outstanding Teacher
KGCOE Outstanding Alumnus
Electrical Engineering
Microelectronic Engineering
Microsystems Engineering
Visitors to Dr. Fuller’s WebPageApril 14 – May 14, 2011
Research Portfolio
DR. IVAN PUCHADES
Industry Experience:National Semiconductor, MaineFreescale Semiconductor, PhoenixImpact Technologies, LLC, RochesterUniversity of Barcelona
At RIT Teaches: MEMSMicroelectronics, Circuits
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 3
Rochester Institute of Technology
Microelectronic Engineering
Research Assistant Professor
IEEE Member
Dr. Renan Turkman Scholar
MS Electrical Engineering
BS Microelectronic Engineering
PhD Microsystems Engineering
Microelectronics, Circuits Lectures and LabsTeam Galt Research
From: Barcelona, Spain
Research Portfolio
TEAM GALT
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 4
Rochester Institute of Technology
Microelectronic Engineering
B.S., M.S., Ph.D., students from EE, ME, MicroE, CE, Materials Science Heidi, Murat
Tal, Lynn, Ellen Sedlack, Christian, Artur, Ivan, Renat
Research Portfolio
SMFL Semiconductor and Microsystems Fabrication Lab
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 5
Rochester Institute of Technology
Microelectronic Engineering
15,000+ sq. ft. Clean room
Complete Equipment Set
for CMOS and MEMS
Research Portfolio
TEAM’S FUNDED RESEARCH
Eastman Kodak Co. – Ink Jet Head with 30 rows and 47 columnsBausch and Lomb, Inc. – Wireless Pressure Sensors for GlaucomaImpact Technology, LLC – Multisensor MEMS Oil Quality SensorNYSERDA – Multisensor MEMS Oil Quality SensorDOD Army – Multisensor MEMS Drinking Water Quality Sensor (Dr WatSen)DOD Navy – MEMS Multi-Sensor (PRISM)DOD Air Force – Aircraft Wireless Brake & Tire Monitor (BATMON)
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 6
Rochester Institute of Technology
Microelectronic Engineering
DOD Air Force – Aircraft Wireless Brake & Tire Monitor (BATMON)DOD DARPA - Blast Dosimeter, $998K (Co-PI with Dr. Borkholder)DOD Army - MEMS Inertial Guidance System (Co-PI with Dr. Crassidis)U of R Medical Center - Energy Harvesting and Motion Sensing Pacemaker LeadsNIH/U of Hawaii – ISFET BiosensorsBP – Beta Voltaic Energy HarvestingRIT – MEMS Viscosity Sensor
3 months to 2 years, $10K to $1,000K each
Research Portfolio
RESEARCH AREAS
BioProbes Energy Harvester
MEMS SensorsMEMS Multisensor ChipsChemical Sensors
Microcontrollers in MicrosystemsWireless Microsystems
Energy Harvesting
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 7
Rochester Institute of Technology
Microelectronic Engineering
CMOS
Energy Harvesting
Bio MEMS
CMOS Circuit DesignCMOS Fabrication
Packaging
Research Portfolio
MEMS SENSORS / MULTI SENSORS
Temperature ViscosityAccelerationHumiditypHCHEMFETsChem Resistors
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 8
Rochester Institute of Technology
Microelectronic Engineering Accelerometer
Viscocity SensorChem ResistorsLiquid LevelPressureStrainLightGas FlowElectrochemical Spectroscopic Impedance
Research Portfolio
CHEMICAL SENSORS
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 9
Rochester Institute of Technology
Microelectronic Engineering
Research Portfolio
NAIL POLISH / CARBON BLACKRESPONSE TO ACETONE AND ISOPROPANOL
30s off, 30s on, 60s off, 30s on, 30s off
0.5 ml Acetone/ 125 ml bottle = 4000 ppm
Resistance goes from ~100 ohms (no vapor)
to ~ 100,000 ohms (with vapor)
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 10
Rochester Institute of Technology
Microelectronic Engineering
30s off, 30s on, 60s off, 30s on, 30s off
Isopropanol ~ 10,000 ppm
No Response
Research Portfolio
MEMS MULTI-SENSOR CHIP’s
Fabricated Multi Sensor Chips
Humidity Sensor
Cleanroom Bay Environment Sensor
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 11
Rochester Institute of Technology
Microelectronic Engineering
Light Sensor
Pressure Sensor
Temperature Sensor
Heidi Purrington
Research Portfolio
OIL QUALITY MEMS MULTI-SENSOR
Photo Diode
Diffused HeaterActuator
Pressure Sensor
Water in Oil
EIS
5m
m x
5m
m
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 12
Rochester Institute of Technology
Microelectronic Engineering
DiodeTemperatureSensor
EIS
Zero-Span Compensated Pressure Sensor over
Temperature
0.00
5.00
10.00
15.00
20.00
25.00
30.00
35.00
40.00
45.00
50.00
0 5 10 15 20
Pressure [psi]
Ou
tpu
t V
olt
ag
e [
mV
]
T = 27 C T = 57 C T = 84 C
5m
m x
5m
m
Oil with 1% SootPressure Study
Picture of MEMS Multisensor
Temp Sensor Test
Research Portfolio
MEMS Universal Fluid Interrogation Sensor (MUFINS)
1
No
rma
lize
d F
req
ue
ncy .
0.8
0.9
1
Temperature ( °C )
D25-norm-T
Q normal
57 42 36 32 29
pH
Viscosity500
600
700
800
20 25 30 35 40 45
Vou
t (m
V)
Temperature
1000
Vou
t (m
V)
Turbidity
Fluid Level and Conductivity
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 13
Rochester Institute of Technology
Microelectronic Engineering
0.8
0.85
0.9
0.95
0 100 200 300 400 500 600
Kinematic Viscosity ( cSt )
No
rma
lize
d F
req
ue
ncy .
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
No
rma
lize
d Q
. Q normal
Spectroscopic impedanceZe ro-Spa n Com pe nsa te d Pre ssure S e nsor ove r
Te m pe ra ture
0.00
5.00
10.00
15.00
20.00
25.00
30.00
35.00
40.00
45.00
50.00
0 5 10 15 20
Pr e s s ur e [ps i]
Ou
tpu
t V
olt
ag
e [
mV
]
T = 27 C T = 57 C T = 84 C
Pressure
0
500
1000
0 2505007501000
Vou
t (m
V)
NTU
Applications:
•Drinking water
•Automobile engine oil
•Industrial Fluids
Research Portfolio
MICROSYSTEM
Team Galt’s definition for Microsystems is the integration of MEMS sensors and actuators with CMOS electronics to provide solutions for a wide variety of applications including automotive, military, aerospace, consumer and biomedical.
PowerManagement
Battery
USB Power
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 14
Rochester Institute of Technology
Microelectronic Engineering
µP....
.
.
.
.
PowerManagement
Co
mm
un
icat
ion
Sig
nal
C
on
dit
ion
ing
otherMEMS
USB Power
Energy Harvester
USB, WiFi
CAN (other)
Wireless
World Wide Web
Research Portfolio
DEVELOP PCB PROTOTYPE CAPABILITY
Prototype evaluation: breadboard sensors and signal processing electronics at the PCB level to evaluate different approaches for realizing microsystems.
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 15
Rochester Institute of Technology
Microelectronic Engineering
Jirachai, Murat Baylav
Jennifer AlbrechtJirachai Dan Smith
Research Portfolio
MEMS MULTI-SENSOR CHIP’s
1-AxisAccelerometerTemperature SensorHumidity SensorX & Y Strain Sensor
Prognostic Integrated Sensory MEMS (PRISM)
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 16
Rochester Institute of Technology
Microelectronic Engineering
4mm x 4mm Chip
Health Management Solution to Predict
Equipment Performance and Readiness
Research Portfolio
MULTISENSOR MICROSYSTEM
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 17
Rochester Institute of Technology
Microelectronic Engineering
MEMS Multisensor Chip
Acceleration (shock)
Temperature, Humidity
Back
Front
µP
Research Portfolio
TEAM GALT SUPPORTS OTHER FACULTY PROJECTS
Dr. David Borkholder – PI
Blast Dosimeter / DARPA
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 18
Rochester Institute of Technology
Microelectronic Engineering
Research Portfolio
HIGH VOLTAGE TRANSISTOR ARRAY
30 Rows, 47 Columns, 4 inch, Ink Jet Array
Design and Fabrication of a Custom NMOS Transistors with a 45 Volt High Side Breakdown Voltage, Integrate into a Large Array Ink Jet Print Head
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 19
Rochester Institute of Technology
Microelectronic Engineering
Source
GateDrain
30 Rows, 47 Columns, 4 inch, Ink Jet Array
45 Volt NMOSFET 16 Masks, 8 at 1X, 8 at 5X
Single Ink Jet
Research Portfolio
HIGH VOLTAGE TRANSISTOR ARRAY
Designed High Voltage TransistorDelivered 16 Masks
1X, 5X, 5”sq., 6”sq.,90 mils, 250 mils thick
Delivered 20 Wafers4 inch by 1 inch chips
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 20
Rochester Institute of Technology
Microelectronic Engineering
4 inch by 1 inch chips(dark field stitching, clear field 1X)
NMOS Vt = 1.12 voltsI drive = 65 mAI leak <0.5 µA Maximum VDS > 45 Volts
Research Portfolio
U OF HAWAII BIOSENSORS - INTRODUCTION
Nitride Gate
NFET
Poly Gate
NFET
P++ Substrate
Contact
This project involves the design and fabrication of NMOS FETS with specific structure and electrical characteristics. Completed devices will have biomolecules attached to the gate materials resulting in specific changes in drain current.
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 21
Rochester Institute of Technology
Microelectronic Engineering
Substrate 10 ohm-cm
No light
More light
Most light
N+ D/SP+
+
NFETNFET Contact
Ion implanted
P-channel
Field Oxide
N+ D/S
2µm PECVD Nitride
0.3µm LPCVD
Nitride
N+ poly Aluminum
Research Portfolio
ISFETS FOR WATER pH AND CHLORINE
ISFET
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 22
Rochester Institute of Technology
Microelectronic Engineering
PACKAGED ISFET
Family of curves with VS=0V, VB=0 to -0.5V and VD=0 to 5VID=33.4 µA when VS=VB=0V
and VD=2.5V
Research Portfolio
ENERGY HARVESTING
Green Optimized Photocell
Indirect Conversion of Radiation for 20 Year-Life Batteries
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 23
Rochester Institute of Technology
Microelectronic Engineering
1.6 cm
Gaseous Tritium Light Source (GTLS)
(GTLS) – Phosphor Coat Glass Vial with Tritium Inside
Tritium: Radioactive Isotope of Hydrogen, 3H, 12year half life
Emits Electrons Through Beta Decay
Electrons Interact With Phosphor Material
Green Light is Emitted (Radio luminescence)
Photo Detector Captures Light and Converts to Energy
Energy Management Electronics
Stores Energy in a Super Capacitor
Research Portfolio
VIBRATION ENERGY HARVESTER
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 24
Rochester Institute of Technology
Microelectronic Engineering
Dr. Denis Cormier
3-D Printer
Brinkman Lab at RIT
Research Portfolio
BLUE TOOTH WIRELESS PRESSURE SENSOR
New testchip and design methodology for design of analog and digital circuits to be integrated with microsystems.
0000000001
3 V
1 1
RCLKSCLK
10-bit (Left) Shift Register
Blu
eto
oth
Seri
al
RF
Lin
k
CTS
TX
RX
RTS
2.4 kHz
5 Hz
Stop Bit
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 25
Rochester Institute of Technology
Microelectronic Engineering
CCLK
0000000001
00000000
CCLR
_____
RCLK8-bit
Binary CounterB
lueto
oth
Seri
al
RTS
StartBit
Internal Counter
000000 00RC Oscillator
Sensor
Research Portfolio
WIRELESS MICROSYSTEMS
Capacitor Sensor
BluetoothTransceiver
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 26
Rochester Institute of Technology
Microelectronic Engineering
Wireless PlatformBreadboard
5” x 8” Breadboard
1” x 1” PCB2mm x 3mm
Custom CMOS & MEMS
2.5” x 3” BT-Arduino
Research Portfolio
DEVELOP MEMS PACKAGING
Packaging of MEMS and Microsystems: Many of the devices we are now making need to be packaged to be tested. Some devices have a large number of connections thus probing is difficult. Other devices need to be interfaced with physical parameters such as pressure, gas flow, acceleration, etc. The goal is to develop flexible, low cost, approaches for creating packages for testing and evaluation. Final custom package design concepts and materials are developed and suppliers found.
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 27
Rochester Institute of Technology
Microelectronic Engineering
Final custom package design concepts and materials are developed and suppliers found.
Packaged Gas Flow SensorPackaging of Pressure
Sensor
George Manos
Research Portfolio
PACKAGE TECHNOLOGY DEVELOPMENT
substrate
TaNAlpha Ta Ta Power,
Time t (Å) Rs (Ω/sq)rho (Ω
cm) CRT MaterialNo TaN seed* 2725 6.55 178.0E-6 -250ppm Beta-Ta
500W, 15 min 2818 7.65 215.6E-6 - 165ppm Beta-Ta
200W, 5min 500 8.74 43.7E-6 + 900ppm Alpha-Ta
200W, 15min 1200 2.73 32.8E-6 + 900ppm Alpha-Ta
200W, 30min 2200 1.6 35.2E-6 + 750ppm Alpha-Ta
MATERIALS SELECTION, PROCESSING, EVALUATION
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 28
Rochester Institute of Technology
Microelectronic Engineering
Solder Bump
Flip Chip
200W, 30min 2200 1.6 35.2E-6 + 750ppm Alpha-Ta
Wire BondINTERCONNECT TECHNOLOGY
Research Portfolio
PACKAGE CONCEPT DESIGN
The microchip (4mm x 4mm) will be mounted on a PC board with voltage regulator chip and a few other components. Four wires will be needed (Power, Ground, Serial Communication) so the board will be soldered to a connector in a housing.
Connector Sealant Signal ConditioningElectronics
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 29
Rochester Institute of Technology
Microelectronic Engineering
Housing
µP1 ½
” MEMSSensor Chip
PCB
Electronics
Research Portfolio
PACKAGING CONCEPT DESIGN
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 30
Rochester Institute of Technology
Microelectronic Engineering
Battery USB Connection
MEMS PCB
Flex Circuit
Research Portfolio
RESULTING FINAL MICROSYSTEM PACKAGES
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 31
Rochester Institute of Technology
Microelectronic Engineering
Research Portfolio
WHO IS JOHN GALT?
John Galt is a fictitious character in Ayn Rand's 1957 classic novel Atlas Shrugged. He was an engineer who challenged his contemporaries to rise above mediocrity and to think outside the box. The question “Who is John Galt?” is posed to express frustration with being stuck with the commonplace, and the answer is really the spirit of challenging and rising above expectations.
In the novel, John Galt invented a revolutionary new motor, which was powered by
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 32
Rochester Institute of Technology
Microelectronic Engineering
In the novel, John Galt invented a revolutionary new motor, which was powered by ambient static electricity. Team Galt is therefore an appropriate name for Dr. Fuller’s MEMS research team at RIT. Integrating CMOS with MEMS is an enabling capability that will allow the team to develop new MEMS devices for a wide range of applications, and the concept of energy harvesting can be paralleled to the work of John Galt.
Heidi Purrington
Research Portfolio
TEAM GALT - ALUMNI
Heidi Purrington, 2010 – Fairchild, S. Portland, MaineMurat Baylav, 2010 –Intel, Phoenix, ArizonaJake Leveto, 2010 – Small Business OwnerEllen Sedlack, 2011 – Micron, Boise, IdahoTal Nagourney, 2011 – Ph.D. Student at Cornell UniversityJeff Traikoff 2011- Intel, Phoenix ArizonaChristian Seemayer, 2012 –
© October 17, 2011 Dr. Lynn Fuller / Dr. Ivan Puchades Page 33
Rochester Institute of Technology
Microelectronic Engineering
Christian Seemayer, 2012 –Dan Smith, 2012 –Nicholas Liotta, 2012 –Jirachai Getpreecharsawas –Jen Albrecht –Ellie Bryon -