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e-mail, April 9, 2006Václav Vrba, Institute of Physics, Prague1
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Phenix NCC Silicon Pad Sensorsproduced in ON Semiconductor
Lukas Tomasek, Michal Tomasek, Vaclav Vrba
Institute of Physics, Prague
Michael Finger, Miroslav Finger
Charles University, Prague
Michael Merkin at al.
Moscow State University
Edward Kistenev, Edward O’Brien
Brookhaven National Laboratory
Richard Seto
University of California at Riverside
Matthias Grosse Perdekamp
University of Illinois at Urbana-Champaign
e-mail, April 9, 2006Václav Vrba, Institute of Physics, Prague2
Layout of components on the wafer
e-mail, April 9, 2006Václav Vrba, Institute of Physics, Prague3
I-V and C-V on single diodes
e-mail, April 9, 2006Václav Vrba, Institute of Physics, Prague4
I-V curves for 4x4 pad array
e-mail, April 9, 2006Václav Vrba, Institute of Physics, Prague5
I-V curves for 4x4 pad array
e-mail, April 9, 2006Václav Vrba, Institute of Physics, Prague6
Reverse current long term stability
e-mail, April 9, 2006Václav Vrba, Institute of Physics, Prague7
I-V curves for 4x4 pad array
e-mail, April 9, 2006Václav Vrba, Institute of Physics, Prague8
Summary
• 8 wafers with pad sensors of Phenix design with integrated bias resistors have been fabricated in ON Semiconductor;
• First measurements indicate very good quality of sensors and also of integrated resistors;
• For future production QA criteria and measurement procedure shall be elaborated. It will help also better define and accent our needs;
• At the moment ONS is finishing processing of the second part of wafers (out of 24 raw wafers provided by Misha Merkin);
• It is highly desirable to send to ONS a.s.a.p. new wafers 525 µm thick purchased from Wacker Siltronic for further production.