21
EE198B Senior Project class Fall 2001 San Jose State University

EE198B Senior Project class Fall 2001 San Jose State University

Embed Size (px)

Citation preview

EE198B

Senior Project class

Fall 2001

San Jose State University

Single Crystal Solar Photocell

Team Members:

Mack Appleton

Sung Min Park

Yemane Tsegaye

Angel Milano

Project Advisor: Dr. David Parent

Project Outline

• Introduction

• Initial Testing

• Design and Simulation.

• Fabrication of Solar Cells

• Test Solar Cells

• Conclusion

Project Objective

• To design, simulate, establish and document a silicon process base-line traveler for the Single Crystal Solar Photocell.

• To enhance the relative efficiency of the Solar Photocells by 5%.

Design and Simulation

1. Maximize the efficiency

2. Anti-refraction coating.

Formula & Equations1. Rs=L/w (2D)

2. Rs = (Rn+) + (Rbar) + (Rcontact)

Rn+ = (n+ * S)/(n*b)

Rbar = (al*b)/(Wb*n)

Rcontact = c/(Wb*b)

3. = Pm/Pin = (FF*IL*Voc)/Pin

4. FF : Fill Factor (Im*Vm)/(Isc*Voc)

5. P=I*V= (I^2)*R

Design of Models

Large-grid with AR Large-grid without AR Small-grid with AR Small-grid without ARwhereLarge grid : S=3.3 cm, Wb=0.2cm, b=6.6cm, and 2

fingers.Small grid : S=0.75cm, Wb=0.2cm, b=6cm, and 8

fingers

Rs Vs Pmax

y = 0.7111e-0.1293x

0

0.2

0.4

0.6

0.8

1

1.2

0 10 20 30

Rs

Pm

ax Pmax

Expon. (Pmax)

Fabrication of Solar Cells

• Diffuse donor region• Apply aluminum coating to front of wafer• Photolithography to define solar cell

pattern• Etch aluminum to create solar cell pattern• Apply anti-reflection coating *• Apply aluminum coating to back of wafer • Anneal wafers• Remove outer edges of wafers

Diffuse Donor Region

• Spin on phosphorous doped silica glass Apply 3ml to front of wafer Spin @ 3000 rpm for 20 seconds

• Diffuse in furnace Heat furnace to 1100oc Push in wafers ½ inch per 15 seconds Diffuse for 1 hour Pull out wafers ½ inch per 15 seconds

• Makes wafer into a large diode

Apply Aluminum Coating

• Desire 2 microns thickness• Sputter on the aluminum

Accurate and precise Fast (2 microns onto 8 wafers in 15 min.) Prone to breaking down

- Or -• Evaporate on aluminum

Reliable Slow (2 microns onto 24 wafers in 3 to 4 hours) Not very precise

Photolithography

• Apply 3ml photo-resist; Spin for 20s @ 5000 rpm

• Soft bake for 90oc for 30 minutes• Place solar cell mask on wafer• Place both into wooden and glass holder• Expose under lamp for 2 minutes• Develop for 15 seconds

Etch Aluminum

• Etch exposed al using hot sulfuric acid• Rinse with DI water• Remove remaining PR using plasma etch

Apply Anti-reflection Coating

• Apply 3ml Titaniumsilicafilm• Spin @ 3000 rpm for 20 seconds

• Spreads film to thickness of 1000 angstroms

Anneal Wafers

• Anneal for 30 minutes in furnace• Creates ohmic contact between al and Si

Cleave Edges of Wafers

• Need to prevent shorting along edge of wafer• Use scribe tool to score along edges of solar

cell• Cleave wafer along scoring

Testing the Solar Cells• Scored, or roughened, back of cells• Placed onto roughened aluminum wafer• Used probes to make contacts

One probe onto the corner of the cell’s al grid One probe onto the al wafer

• Tried various methods for making good contacts Solder paste Silver paste Copper tape

Testing the Solar Cells

• Illuminated the cell Used 75W light bulb at 3cm distance

• Connected voltmeter to probe terminals Gives open circuit voltage

• Connected current source to probe terminals Ran current against that being generated by the

cells Measured voltage for different current levels

IV Curves for One Half of Grid Solar CellsPmax S13A = 41.9 mW Pmax S6A = 49.8

-250

-200

-150

-100

-50

0

50

-100 0 100 200 300 400 500 600 700

Voltage (mV)

Cu

rre

nt

(mA

)

Cell S13A (Small Grid, no AR)

Cell S6A (Small Grid, AR)

IV Curves for Small Grid Solar CellsPmax S21 = 61.4 mW Pmax S8 = 71.5 mW

-500

-400

-300

-200

-100

0

100

0 100 200 300 400 500 600 700

Voltage (mV)

Cell S8 (Small Grid, AR)

Cell S21 (Small Grid, no AR)

Conclusions

• AR cells average of 17.8% more efficient Efficiency increase = (PmaxOLD – PmaxAR)/PmaxOLD

Wanted minimum 5% increase

• Easy to follow process• Recommendations

Use the smaller grid Possible photolithography and etch of back al