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EE5311- Digital IC Design Module 3 - The Inverter Janakiraman V Assistant Professor Department of Electrical Engineering Indian Institute of Technology Madras Chennai September 6, 2017 Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 1/30

EE5311- Digital IC Design - Department of Electrical ...janakiraman/courses/EE5311/lecture_notes/module... · EE5311- Digital IC Design Module 3 - The Inverter ... pLH Fall delay

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Page 1: EE5311- Digital IC Design - Department of Electrical ...janakiraman/courses/EE5311/lecture_notes/module... · EE5311- Digital IC Design Module 3 - The Inverter ... pLH Fall delay

EE5311- Digital IC DesignModule 3 - The Inverter

Janakiraman V

Assistant ProfessorDepartment of Electrical EngineeringIndian Institute of Technology Madras

Chennai

September 6, 2017

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 1/30

Page 2: EE5311- Digital IC Design - Department of Electrical ...janakiraman/courses/EE5311/lecture_notes/module... · EE5311- Digital IC Design Module 3 - The Inverter ... pLH Fall delay

Learning Objectives

Explain the functioning of a CMOS inverter

Explain the Voltage Transfer Characteristics of an inverter

Derive an expression for the trip point of an inverter

Derive an expression for the delay of an inverter driving aload

Derive expressions for Static, Dynamic and Short Circuitpower of an inverter.

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 2/30

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Outline

Switch Model

Transfer Characteristics

Switching Threshold

Noise Margin

Supply Voltage Scaling

Propagation Delay

Power Dynamic Short circuit Leakage

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 3/30

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Switch Model

CL

Vin = VDDVin = 0

Rp

Rn

VoutVin

Figure: The CMOS Inverter

The high and low logic levels are VDD and GND(0)

Logic levels are independent of sizes - Ratioless Logic

Low output impedance (kΩ) - Immune to noise

Large input impedance - Infinite fanout

No conduction path from supply to ground in steady state

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 4/30

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Load Line

G

S

SD

DVout

Vin

Figure: The CMOS Inverter

IDSp = −IDSn

VGSn = Vin

VGSp = Vin − VDD

VDSn = Vout

VDSp = Vout − VDD

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 5/30

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Load Line

Vin = 0.7VDD

Vin = VDD

Vin = 0.4VDD

IDn

Vin = 0

Vin = VDDVin = 0

Vout

Vin = 0.5VDD

Vin = 0.4VDD

Vin = 0.7VDD

Figure: Solid lines- NMOS, Dashed lines - PMOS

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 6/30

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Voltage Transfer Characterisitcs

2 53 41

Vin = VOut = VM

Vin

Vin

Vout

Vout

CL

Figure: VTC of a CMOS Inverter

Region NMOS PMOS1 Off Lin2 Sat Lin3 Sat Sat4 Lin Sat5 Lin Off

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 7/30

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Switching Threshold

2 53 41

Vin = VOut =

Vin

Vin

Vout

Vout

CL

Figure: Switching Threshold

Both NMOS and PMOS are in saturation

Assume velocity saturation

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 8/30

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Switching Threshold

IDSp = −IDSn

VGSn = Vin

VGSp = Vin − VDD

VDSn = Vout

VDSp = Vout − VDD

Vin = Vout

Both NMOS and PMOS are in saturation

Assume velocity saturation

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 9/30

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Switching Threshold

Ignoring channel length modulation

IDSn = k ′

n

Wn

L(VM − VTn −

VDSATn

2)VDSATn

IDSp = k ′

p

Wp

L(VM − VDD − VTp −

VDSATp

2)VDSATp

VM =VTn +

VDSATn

2+ r(VDD + VTp +

VDSATp

2)

1 + r

r =k ′

p(Wp/L)VDSATp

k ′

n(Wn/L)VDSATn

=Wpvsatp

Wnvsatn

VM ≈r

r + 1VDD

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 10/30

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Switing Threshold

Increasing r

Vout

Vin

Vin = VOut = VM

Figure: VTC Trip Point

Ratio of Wp

Wndetermines VM

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 11/30

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Switing Threshold Without Velocity Saturation

VM =VTn + r(VDD + VTp)

1 + r

r =

−kp

kn

Left as an exercise

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 12/30

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Noise MarginVout

VOH

VOL

VIHVIL Vin

VOL

VIH

VIL

VOH

NMH

NML

Figure: Noise Margin of a CMOS Inverter

Logic levels from the driver should be recognized by theload

Points of slope -1 provide the noise margin levels

NMH = VOH − VIH

NML = VIL − VOL

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 13/30

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Noise Margin Approximation

VIH

Vout

Vin

VM

VIL

Figure: Noise Margin approximation of a CMOS Inverter

Extend the tangent at VM

Slope is the gain (g) of the VTC

NMH = VDD − VIH = VDD − VM −VM

g

NML = VIL = VM +VDD − VM

g

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 14/30

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Noise Margin Calculations

Need to consider channel length modulation

Slope is the gain (g = dVout

dVin) of the VTC

IDSn = I no−clmDSn (1 + λnVout)

IDSp = I no−clmDSp (1 + λp(Vout − VDD))

g = −1

ID(VM)

knVDSATn + kpVDSATp

λn − λp

g ≈1 + r

(VM − VTn − VDSATn/2)(λn − λp)

r =kpVDSATp

knVDSATn

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 15/30

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Inverters - Robust Configuration

0 → VDDVDD

0 → VDD − VTn

VDD

VDD → 0 VDD → |VTp|

Pull down to GND with NMOS

Pull up to VDD with PMOS

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 16/30

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Pass Transistors

VD

vC(0−) = 0

vC(0−) = VDD

VG

VG

VD

vC (t) = min(VG − VTn,VD)

vC (t) = max(VG − VTp,VD)

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 17/30

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Switch Model Dynamic Behaviour

Vin ↓ 0

Rp

Rn

CL

High → LowLow → High

Vin ↑ VDD

CL

Figure: Dynamic Behaviour of CMOS Inverter

τrise = RpCL

τfall = RnCL

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 18/30

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Delay

Propagation Delay - 50% input to 50% output Rise delay. Output goes from L ↑ H - tpLH Fall delay . Output goes from H ↓ L - tpHL Propagation delay is defined as tp =

tpHL+tpLH2

Slew Rise time - Time taken for output to go from 10% to

90% Fall time - TIme taken for output to go from 90% to

10%

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 19/30

Page 20: EE5311- Digital IC Design - Department of Electrical ...janakiraman/courses/EE5311/lecture_notes/module... · EE5311- Digital IC Design Module 3 - The Inverter ... pLH Fall delay

Delay

Vout

CL

tpHL tpLH

t

Vin

VinVout

Figure: Delay

tpHL = ReqnCL

tpLH = ReqpCL

tp = CL

Reqn + Reqp

2

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 20/30

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Transistor Sizing - Symmetric delay

Rising propagation delay should be identical to fallingpropagation delay.

This also ensures a symmeteric VTC

tpHL = tpLH

Reqn = Reqp

CLVDD

2IDSATn

=CLVDD

2IDSATp

Wnµn = Wpµp

Wp ≈ 2Wn

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 21/30

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Transistor Sizing - Minimum delay

CL = Cdp1 + Cdn1 + Cgn2 + Cgp2 + Cwire

tp = CL

Reqn + Reqp

2

tp = (0.5)[(1 + β)(Cgn2 + Cdn1) + Cwire ]Reqn(1 +α

β)

α = k′

nVDSATn/k′

pVDSATp

∂tp∂β

= 0

βopt =

α

(

1 +Cwire

Cdn1 + Cgn2

)

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 22/30

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Power Dissipation

Energy lost as heat disspation in the devices

Dynamic - Charge/ Discharging of cpacitance

Short Circuit - Conductive path from VDD → GND

Static - Leakage even when no activity happens

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 23/30

Page 24: EE5311- Digital IC Design - Department of Electrical ...janakiraman/courses/EE5311/lecture_notes/module... · EE5311- Digital IC Design Module 3 - The Inverter ... pLH Fall delay

Dynamic PowerVin ↓ 0

Rp

Rn

CL

High → LowLow → High

Vin ↑ VDD

CL

Figure: Capacitor charge and discharge

L ↑ H

EVDD =

0

iVDD(t)VDDdt

EC =

0

iVDD(t)Voutdt

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 24/30

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Dynamic Power

L ↑ H

EVDD =

0

iVDD(t)VDDdt

EVDD =

0

CL

dvout

dtVDDdt

EVDD =

∫ VDD

0

CLVDDdvout

EVDD = CLV2DD

EC =CLV

2DD

2

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 25/30

Page 26: EE5311- Digital IC Design - Department of Electrical ...janakiraman/courses/EE5311/lecture_notes/module... · EE5311- Digital IC Design Module 3 - The Inverter ... pLH Fall delay

Dynamic Power

L ↑ H - Load capacitor charges and disspatesCLV

2DD

2in

PMOS

H ↓ L - Load capacitor discharges and disspatesCLV

2DD

2in

NMOS

Note that the energy dissipated is independent of size

Depends on Probability of switching (P0→1) - Activity factor Frequency of operation (f )

Pdyn = CLV2DD f0→1

Pdyn = CLV2DDP0→1f

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 26/30

Page 27: EE5311- Digital IC Design - Department of Electrical ...janakiraman/courses/EE5311/lecture_notes/module... · EE5311- Digital IC Design Module 3 - The Inverter ... pLH Fall delay

Short Circuit Power

IscVT

VDD − VT

Ipeak

Vin

CL

Vout

Figure: Both NMOS and PMOS conduct

Esc = VDD

Ipeaktsc

2+ VDD

IPeaktsc

2Psc = tscVDD Ipeak f

tsc =VDD + VTp − VTn

VDD

ts

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 27/30

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Static Power

ON

ONVDD VDD 00

Isubn

Isubp

Figure: NMOS or PMOS leaks current

Pstat = IstatVDD

Ptot = Pdyn + Psc + Pstat

Ptot = (CLV2DD + VDD Ipeakts)f0→1 + VDD Ileak

Janakiraman, IITM EE5311- Digital IC Design, Module 3 - The Inverter 28/30