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trodeposition of Ge on Au(111) from aqueous solutio L. Stickney, University of Georgia Research Foundation Inc, DMR 0704 STM image of Ge deposited on Au(111) at -600mV. The pattern is a root 3, at a coverage of 1/3 ML of Ge(OH) 3 STM image of Ge deposited on Au(111) at -800mV. The image is of a 0.8 ML Moire pattern of GeH. Electronic materials, such as used to form computer processors, are usually formed by gas or vacuum phase deposition. The major exception is Cu, which is now deposited electrochemically. The method is less costly, creates fewer particles, and is compatible with the FAB. It is not easy to electrodeposit elemental semiconductors, such as Si and Ge. These are images taken using scanning tunneling microscopy (STM) of the first layer as Ge is electrodeposited on a Au(111) crystal. This chemistry is being used to grow compounds such as GeSbTe, a phase change memory material, by electrochemical atomic layer deposition (ALD). ALD allows the formation of nanofilms of materials with the

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Page 1: Electrodeposition of Ge on Au(111) from aqueous solutions

Electrodeposition of Ge on Au(111) from aqueous solutions John L. Stickney, University of Georgia Research Foundation Inc, DMR 0704142

STM image of Ge deposited on Au(111) at -600mV. The pattern is a root 3, at a coverage of 1/3 ML of Ge(OH)3

STM image of Ge deposited on Au(111) at -800mV. The image is of a 0.8 ML Moire pattern of GeH.

Electronic materials, such as used to form computer processors, are usually formed by gas or vacuum phase deposition. The major exception is Cu, which is now deposited electrochemically. The method is less costly, creates fewer particles, and is compatible with the FAB.

It is not easy to electrodeposit elemental semiconductors, such as Si and Ge. These are images taken using scanning tunneling microscopy (STM) of the first layer as Ge is electrodeposited on a Au(111) crystal. This chemistry is being used to grow compounds such as GeSbTe, a phase change memory material, by electrochemical atomic layer deposition (ALD).

ALD allows the formation of nanofilms of materials with the atomic layer control needed for tomorrows electronics.

Page 2: Electrodeposition of Ge on Au(111) from aqueous solutions

Diversity workshops John L. Stickney, University of Georgia Research Foundation Inc, DMR 0704142

Stickney was Department Head of Chemistry for 6 years. As head he hired the only woman on the faculty, and hired the second African American faculty member in the department. He has had four African graduate students in his group over the last three years. He mentors 2 African American undergraduates. Recently he attended 2 NSF workshops on Diversity: “Leadership Excellence For Academic Diversity (LEAD)” and “Chemists, Chemical Engineers and Materials Scientists with Disabilities”. The Workshop on Disabilities was enlightening, in that John had only thought of visibly disabled faculty, he had not considered invisible disabilities. His experience with the workshop helped him deal with a faculty student conflict where the student was bi-polar and schizophrenic. As a Dyslexic, Stickney had not thought of himself as disabled, until the workshop, just a person who reads very slowly and can not spell.

Prof. Yen GangProf. Marcus Lay

Dhego Banga D. Gebregziabiher John Muchena

Dr. Ken Mathe