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GaAs Infrared Emitting DiodeSE1450
DESCRIPTION
FEATURESCompact, metal can coaxial package•
24¡ (nominal) beam angle•
935 nm wavelength•
Wide operating temperature range (55¡C to +125¡C)
•
Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and SD1410 photodarlington
•
The SE1450 is a gallium arsenide infrared emitting diode mounted in a glass lensed, metal can coaxial package. The package may have a tab or second lead welded to the can as an optional feature (SE1450XXXL). Both leads are flexible and may be formed as required to fit various mounting configurations.
INFRA-63.TIF
OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance
2 plc decimals ±0.020(0.51)
.106(2.69)
DIA.076(1.93)
ANODE
MIN
.095(2.41) DIA
.020(0.51) DIA
.091(2.26)
.079(2.01)
.062(1.57) DIA
1.000(25.40)
.122(3.10)
.010(0.25)
CATHODE (CASE)
DIM_001a.ds4
SE1450-XXX
.106(2.69)
DIA.076(1.93)
ANODE
CATHODE
TYPICAL MIN
.095(2.41) DIA
.020 (0.51) DIA
.091(2.26)
.079(2.01)
.062(1.57) DIA
1.000(25.40)
.122(3.10)
.010(0.25)
.020 (0.51) DIA
~~~~
~~
DIM_001b.ds4
SE1450-XXXL
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h8
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSE1450
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current 50 mAPower Dissipation 75 mW [À]
Operating Temperature Range -55¡C to 125¡CStorage Temperature Range -65¡C to 150¡CSoldering Temperature (10 sec) 260¡C
Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.71 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 9
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSE1450
Radiant Intensity vsAngular Displacement gra_001.ds4
Angular displacement - degrees
Rel
ativ
e in
tens
ity
0.0
0.1
0.2
0.3 0.4
0.5
0.6
0.7
0.8 0.9
1.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Fig. 1 Radiant Intensity vsForward Current gra_002.ds4
Forward current - mA
Nor
mal
ized
rad
iant
in
tens
ity
0.0
0.1 0.2
0.3 0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0 10.0 20.0 30.0 40.0 50.0
Fig. 2
Forward Voltage vsForward Current gra_003.ds4
Forward current - mA
For
war
d vo
ltage
- V
1.05
1.10
1.15
1.20
1.25
1.30
1.35
1.40
0 20 40 60
Fig. 3 Forward Voltage vsTemperature gra_200.ds4
Temperature - °C
For
war
d vo
ltage
- V
1.00
1.05
1.10
1.15
1.20
1.25
1.30
1.35
1.40
-50 -25 0 25 50 75 100 125
IF = 20 mA
Fig. 4
Spectral Bandwidth gra_005.ds4
Wavelength - nm
Rel
ativ
e in
tens
ity
0.0
0.1 0.2
0.3 0.4
0.5 0.6
0.7
0.8 0.9
1.0
870 890 910 930 950 970 990 1010
Fig. 5 Coupling Characteristicswith SD1440 gra_006.ds4
Lens-to-lens separation - inches
Nor
mal
ized
ligh
t cu
rren
t
0.0
0.2
0.4
0.6
0.8
1.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig. 6
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h10
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSE1450
Relative Power Output vsFree Air Temperature gra_130.ds4
TA - Free-air temperature - (°C)
Rel
ativ
e po
wer
out
put
0.1
1.0
10
-50 -25 0 +25 +50 +75 +100
0.2
0.5
2.0
5.0
IF = 30 mAIF = 20 mA
IF = 10 mA
IF = 40 mA
Fig. 7
All Performance Curves Show Typical Values
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 11
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
AlGaAs Infrared Emitting DiodeSE1470
DESCRIPTION
FEATURESCompact metal can coaxial package•
24¡ (nominal) beam angle•
880 nm wavelength•
Higher output power than GaAs at equivalent drive currents
•
Wide operating temperature range (55¡C to +125¡C)
•
Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and SD1410 photodarlington
•
The SE1470 is a high intensity aluminum gallium arsenide infrared emitting diode mounted in a glass lensed metal can coaxial package. The package may have a tab or second lead welded to the can as an optional feature (SE1470-XXXL). Both leads are flexible and may be formed as required to fit various mounting configurations. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current.
INFRA-63.TIF
OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance
2 plc decimals ±0.020(0.51)
.106(2.69)
DIA.076(1.93)
ANODE
MIN
.095(2.41) DIA
.020(0.51) DIA
.091(2.26)
.079(2.01)
.062(1.57) DIA
1.000(25.40)
.122(3.10)
.010(0.25)
CATHODE (CASE)
DIM_001a.ds4
SE1470-XXX
.106(2.69)
DIA.076(1.93)
ANODE
CATHODE
TYPICAL MIN
.095(2.41) DIA
.020 (0.51) DIA
.091(2.26)
.079(2.01)
.062(1.57) DIA
1.000(25.40)
.122(3.10)
.010(0.25)
.020 (0.51) DIA
~~~~
~~
DIM_001b.ds4
SE1470-XXXL
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h12
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
AlGaAs Infrared Emitting DiodeSE1470
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current 50 mAPower Dissipation 75 mW [À]
Operating Temperature Range -55¡C to 125¡CStorage Temperature Range -65¡C to 150¡CSoldering Temperature (10 sec) 260¡C
Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.71 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 13
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
AlGaAs Infrared Emitting DiodeSE1470
Radiant Intensity vsAngular Displacement gra_007.ds4
Angular displacement - degrees
Rel
ativ
e in
tens
ity
0.0
0.1
0.2
0.3 0.4
0.5
0.6
0.7
0.8 0.9
1.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Fig. 1 Radiant Intensity vsForward Current gra_008.ds4
Forward current - mA
Nor
mal
ized
rad
iant
inte
nsity
0.0
0.1 0.2
0.3 0.4
0.5 0.6
0.7
0.8 0.9
1.0
0.0 4.0 8.0 16.0 12.0 20.0
Fig. 2
Forward Voltage vsForward Current gra_201.ds4
Forward current - mA
For
war
d vo
ltage
- V
1.0
1.1
1.2
1.3
1.4
1.5
1.6
0 10 20 30 40 50
Fig. 3 Forward Voltage vsTemperature gra_202.ds4
Temperature - °C
For
war
d vo
ltage
- V
1.0
1.1
1.2
1.3
1.4
1.5
1.6
-50 -25 0 25 50 75 100 125
IF = 20 mA
Fig. 4
Spectral Bandwidth gra_011.ds4
Wavelength - nm
Rel
ativ
e in
tens
ity
0.0
0.1 0.2
0.3 0.4
0.5 0.6
0.7
0.8 0.9
1.0
760 800 840 880 920 960 1000
Fig. 5 Coupling Characteristicswith SD1440 gra_012.ds4
Lens-to-lens seperation - inches
Nor
mal
ized
ligh
t cur
rent
0.0
0.2
0.4
0.6
0.8
1.0
0.0 0.2 0.4 0.8 0.6 1.4 1.2 1.0
Fig. 6
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h14
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
AlGaAs Infrared Emitting DiodeSE1470
Relative Power Output vsFree Air Temperature gra_130.ds4
TA - Free-air temperature - (°C)
Rel
ativ
e po
wer
out
put
0.1
1.0
10
-50 -25 0 +25 +50 +75 +100
0.2
0.5
2.0
5.0
IF = 30 mAIF = 20 mA
IF = 10 mA
IF = 40 mA
Fig. 7
All Performance Curves Show Typical Values
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 15
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSE2460
DESCRIPTION
FEATURESMiniature, hermetically sealed, pill style, metal can package
•
18¡ (nominal) beam angle•
Wide operating temperature range (55¡C to +125¡C)
•
Ideal for direct mounting to printed circuit boards•
935 nm wavelength•
Mechanically and spectrally matched to SD2420 photodiode, SD2440 phototransistor and SD2410 photodarlington
•
The SE2460 is a gallium arsenide infrared emitting diode mounted in a hermetically sealed, glass lensed, metal can package. This package directly mounts in double sided PC boards.
DIM_002.ds4
INFRA--1.TIF
OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance
2 plc decimals ±0.020(0.51)
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h16
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSE2460
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current 75 mAPower Dissipation 125 mW [À]
Operating Temperature Range -55¡C to 125¡CStorage Temperature Range -65¡C to 150¡CSoldering Temperature (10 sec) 260¡C
Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 1.19 mW/¡C,when soldered into a double sided printed circuit board.
SCHEMATIC
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 17
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSE2460
Radiant Intensity vsAngular Displacement gra_111.ds4
Angular displacement - degrees
Rel
ativ
e in
tens
ity
0.0
0.1
0.2
0.3 0.4
0.5
0.6
0.7
0.8 0.9
1.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Fig. 1 Radiant Intensity vsForward Current gra_014.ds4
Forward current - mA
Nor
mal
ized
rad
iant
in
tens
ity
0.0
0.1 0.2
0.3 0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0 10.0 20.0 30.0 40.0 50.0
Fig. 2
Forward Voltage vsForward Current gra_203.ds4
Forward current - mA
For
war
d vo
ltage
- V
1.00
1.05
1.10
1.20
1.25
1.30
1.40
0 10 20 30 50 60 70 8040
1.15
1.35
Fig. 3 Forward Voltage vsTemperature gra_200.ds4
Temperature - °C
For
war
d vo
ltage
- V
1.00
1.05
1.10
1.15
1.20
1.25
1.30
1.35
1.40
-50 -25 0 25 50 75 100 125
IF = 20 mA
Fig. 4
Spectral Bandwidth gra_005.ds4
Wavelength - nm
Rel
ativ
e in
tens
ity
0.0
0.1 0.2
0.3 0.4
0.5 0.6
0.7
0.8 0.9
1.0
870 890 910 930 950 970 990 1010
Fig. 5 Coupling Characteristicswith SD2440 gra_015.ds4
Lens-to-lens separation - inches
Nor
mal
ized
ligh
t cu
rren
t
0.0
0.1
0.2
0.3 0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Fig. 6
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h18
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSE2460
Normalized Power Output vsTemperature gra_131.ds4
Nor
mal
ized
pow
er o
utpu
t
0
.2
.4
.6
.8
1.0
1.2
1.4
1.61.8
2.0
TA - Ambient temperature - (°C)
-50 -25 0 +25 +50 +75 +100 +125
IF = 50 mA
IF = 20 mA
Fig. 7
All Performance Curves Show Typical Values
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 19
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
AlGaAs Infrared Emitting DiodeSE2470
DESCRIPTION
FEATURESMiniature, hermetically sealed, pill style, metal can package
•
18¡ (nominal) beam angle•
Wide operating temperature range (55¡C to +125¡C)
•
Higher power output than GaAs at equivalent drive currents
•
Ideal for direct mounting to printed circuit boards•
880 nm wavelength•
Mechanically and spectrally matched to SD2420 photodiode, SD2440 phototransistor and SD2410 photodarlington
•
The SE2470 is a high intensity aluminum gallium arsenide infrared emitting diode mounted in a hermetically sealed, glass lensed, metal can package. This package directly mounts in double sided PC boards. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current.
DIM_002.ds4
INFRA--1.TIF
OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance
2 plc decimals ±0.020(0.51)
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h20
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
AlGaAs Infrared Emitting DiodeSE2470
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current 75 mAPower Dissipation 125 mW [À]
Operating Temperature Range -55¡C to 125¡CStorage Temperature Range -65¡C to 150¡CSoldering Temperature (10 sec) 260¡C
Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 1.19 mW/¡C,when soldered into a double sided printed circuit board.
SCHEMATIC
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 21
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
AlGaAs Infrared Emitting DiodeSE2470
Radiant Intensity vsAngular Displacement gra_111.ds4
Angular displacement - degrees
Rel
ativ
e in
tens
ity
0.0
0.1
0.2
0.3 0.4
0.5
0.6
0.7
0.8 0.9
1.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Fig. 1 Radiant Intensity vsForward Current gra_016.ds4
Forward current - mA
Nor
mal
ized
rad
iant
in
tens
ity
0.0
0.1 0.2
0.3 0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0 10.0 20.0 30.0 40.0 50.0
Fig. 2
Forward Voltage vsForward Current gra_204.ds4
Forward current - mA
For
war
d vo
ltage
- V
1.0
1.1
1.2
1.4
1.5
1.6
1.8
0 10 20 30 50 60 70 8040
1.3
1.7
Fig. 3 Forward Voltage vsTemperature gra_202.ds4
Temperature - °C
For
war
d vo
ltage
- V
1.0
1.1
1.2
1.3
1.4
1.5
1.6
-50 -25 0 25 50 75 100 125
IF = 20 mA
Fig. 4
Spectral Bandwidth gra_011.ds4
Wavelength - nm
Rel
ativ
e in
tens
ity
0.0
0.1 0.2
0.3 0.4
0.5 0.6
0.7
0.8 0.9
1.0
760 800 840 880 920 960 1000
Fig. 5 Coupling Characteristicswith SD2440 gra_015.ds4
Lens-to-lens separation - inches
Nor
mal
ized
ligh
t cu
rren
t
0.0
0.1
0.2
0.3 0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Fig. 6
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h22
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
AlGaAs Infrared Emitting DiodeSE2470
Normalized Power Output vsTemperature gra_131.ds4
Nor
mal
ized
pow
er o
utpu
t
0
.2
.4
.6
.8
1.0
1.2
1.4
1.61.8
2.0
TA - Ambient temperature - (°C)
-50 -25 0 +25 +50 +75 +100 +125
IF = 50 mA
IF = 20 mA
Fig. 7
All Performance Curves Show Typical Values
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 23
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSE3450/5450
DESCRIPTION
FEATURESTO-46 metal can package•
Choice of flat window or lensed package•
90¡ or 20¡ (nominal) beam angle option•
935 nm wavelength•
Wide operating temperature range (55¡C to +125¡C)
•
Mechanically and spectrally matched to SD3421/5421 photodiode, SD3443/5443/5491phototransistor, SD3410/5410 photodarlington and SD5600 series Schmitt trigger
•
The SE3450/5450 series consists of a gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3450 series has flat window cans providing a wide beam angle, while the SE5450 series has glass lensed cans providing a narrow beam angle. The TO-46 packages offer high power dissipation capability and are ideally suited for operation in hostile environment.
INFRA-83.TIF
OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance
2 plc decimals ±0.020(0.51)
2. ANODE1. CATHODE (TAB)
LEADS:
.046(1.17)
.036(.91)
2
1
DIA.(.460)
.018
MIN.(12.70)
.500
(0.36).015
.140 (3.56)
.153 (3.89)
DIA..137 (3.48)
.160 (4.06)
.188 (4.77)
.178 (4.52)DIA.
DIA..208 (5.28).219 (5.56)
.100(2.54)DIA NOM
45°
.048(1.22)
.028(.71)
(CASE)
DIM_003a.ds4
SE3450
.046(1.17)
.036(.91)
2
1
DIA.(.460)
.018
MIN.(12.70)
.500
(0.36).015
5.08
.200
DIA..137 (3.48)
.160 (4.06)
.188 (4.77)
.178 (4.52)DIA.
DIA..208 (5.28).219 (5.56)
.100(2.54)DIA NOM
45°
.048(1.22)
.028(.71)
.224 (5.89)
.247 (6.27)2. ANODE1. CATHODE (TAB)
LEADS:
(CASE)
DIM_003b.ds4
SE5450
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h24
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSE3450/5450
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current 100 mAPower Dissipation 150 mW [À]
Operating Temperature Range -55¡C to 125¡CStorage Temperature Range -65¡C to 150¡CSoldering Temperature (10 sec) 260¡C
Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 1.43 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 25
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSE3450/5450
Radiant Intensity vsAngular Displacement (SE3450) gra_017.ds4
Angular displacement - degrees
Rel
ativ
e in
tens
ity
0.0
0.1
0.2
0.3 0.4
0.5
0.6
0.7
0.8 0.9
1.0
-60 -45 -30 -15 0 +15 +30 +45 +60
Fig. 1 Radiant Intensity vsAngular Displacement (SE5450) gra_023.ds4
Angular displacement - degrees
Rel
ativ
e in
tens
ity
0.0
0.1
0.2
0.3 0.4
0.5
0.6
0.7
0.8 0.9
1.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Fig. 2
Radiant Intensity vsForward Current gra_018.ds4
Forward current - mA
Nor
mal
ized
rad
iant
in
tens
ity -
%
0.0
50
100
150
200
250
0 100 200 300 400 500
Pulsed
Fig. 3 Forward Voltage vsForward Current gra_205.ds4
Forward current - mA
For
war
d vo
ltage
- V
1.00
1.05
1.10
1.20
1.25
1.30
1.40
0 10 20 40 60 80 90 10050
1.15
1.35
30 70
Fig. 4
Forward Voltage vsTemperature gra_206.ds4
Temperature - °C
For
war
d vo
ltage
- V
1.20
1.25
1.30
1.35
1.40
1.45
1.50
1.55
1.60
-50 -25 0 25 50 75 100 125
IF = 100 mA
Fig. 5 Spectral Bandwidth gra_005.ds4
Wavelength - nm
Rel
ativ
e in
tens
ity
0.0
0.1 0.2
0.3 0.4
0.5 0.6
0.7
0.8 0.9
1.0
870 890 910 930 950 970 990 1010
Fig. 6
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h26
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSE3450/5450
Coupling CharacteristicsSE3450 with SD3443 gra_021.ds4
Window-to-window distance - inches
Nor
mal
ized
ligh
t cu
rren
t
0.0
0.2
0.4
0.6
0.8
1.0
0.0 0.2 0.4 0.6 0.8 1.0
Fig. 7 Coupling CharacteristicsSE5450 with SD5443 gra_024.ds4
Lens-to-lens distance - inches
Nor
mal
ized
ligh
t cu
rren
t
0.0
0.2
0.4
0.6
0.8
1.0
0 2 4 6 7 9 1 3 5 8
Fig. 8
Radiant Intensity vsCase Temperature gra_022.ds4
Case temperature - °C
Nor
mal
ized
rad
iant
int e
nsity
0.1
0.2 0.3 0.4 0.5
1.0
2.0 3.0 4.0 5.0
-75 -50 -25 0 25 50 75 100 125
Normalized to IF = 100 mA TA = 25 °C
Fig. 9
All Performance Curves Show Typical Values
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 27
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSE3455/5455
DESCRIPTION
FEATURESTO-46 metal can package•
Choice of flat window or lensed package•
90¡ or 20¡ (nominal) beam angle option•
935 nm wavelength•
Wide operating temperature range (55¡C to +125¡C)
•
Ideal for high pulsed current applications•
Mechanically and spectrally matched to SD3421/5421 photodiode, SD3443/5443/5491phototransistor, SD3410/5410 photodarlington and SD5600 series Schmitt trigger
•
The SE3455/5455 series consists of a gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3455 series has flat window cans providing a wide beam angle, while the SE5455 series has glass lensed cans providing a narrow beam angle. These devices are constructed with dual bond wires suitable for pulsed current applications. The TO-46 packages offer high power dissipation capability and are ideally suited for operation in hostile environments.
INFRA-83.TIF
OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance
2 plc decimals ±0.020(0.51)
2. ANODE1. CATHODE (TAB)
LEADS:
.046(1.17)
.036(.91)
2
1
DIA.(.460)
.018
MIN.(12.70)
.500
(0.36).015
.140 (3.56)
.153 (3.89)
DIA..137 (3.48)
.160 (4.06)
.188 (4.77)
.178 (4.52)DIA.
DIA..208 (5.28).219 (5.56)
.100(2.54)DIA NOM
45°
.048(1.22)
.028(.71)
(CASE)
DIM_005a.ds4
SE3455
2. ANODE (CASE)1. CATHODE (TAB)
LEADS:
.046(1.17)
.036(.91)
2
1
DIA.(.460)
.018
MIN.(12.70)
.500
(0.36).015
5.08
.200
DIA..137 (3.48)
.160 (4.06)
.188 (4.77)
.178 (4.52)DIA.
DIA..208 (5.28).219 (5.56)
.100(2.54)DIA NOM
45°
.048(1.22)
.028(.71)
.224 (5.89)
.247 (6.27)
DIM_005b.ds4
SE5455
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h28
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSE3455/5455
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current 100 mAPeak Forward Current 3 A
(1µs pulse width, 300 pps)Power Dissipation 150 mW [À] Operating Temperature Range -55¡C to 125¡C
Storage Temperature Range -65¡C to 150¡CSoldering Temperature (10 sec) 260¡C
Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 1.43 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 29
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSE3455/5455
Radiant Intensity vsAngular Displacement (SE3455) gra_017.ds4
Angular displacement - degrees
Rel
ativ
e in
tens
ity
0.0
0.1
0.2
0.3 0.4
0.5
0.6
0.7
0.8 0.9
1.0
-60 -45 -30 -15 0 +15 +30 +45 +60
Fig. 1 Radiant Intensity vsAngular Displacement (SE5455) gra_023.ds4
Angular displacement - degrees
Rel
ativ
e in
tens
ity
0.0
0.1
0.2
0.3 0.4
0.5
0.6
0.7
0.8 0.9
1.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Fig. 2
Radiant Intensity vsForward Current gra_018.ds4
Forward current - mA
Nor
mal
ized
rad
iant
in
tens
ity -
%
0.0
50
100
150
200
250
0 100 200 300 400 500
Pulsed
Fig. 3 Forward Voltage vsForward Current gra_019.ds4
Forward current - mA
For
war
d vo
ltage
- V
0.90
0.95
1.00
1.05 1.10
1.15
1.20
1.25
1.30 1.35
0 20 40 60 80 100
Fig. 4
Forward Voltage vsTemperature gra_020.ds4
Temperature - °C
For
war
d vo
ltage
- V
1.21
1.23
1.25
1.27
1.29
1.31
1.33
1.35
-30 -10 10 30 50 70 90
IF=100 mA
Fig. 5 Spectral Bandwidth gra_005.ds4
Wavelength - nm
Rel
ativ
e in
tens
ity
0.0
0.1 0.2
0.3 0.4
0.5 0.6
0.7
0.8 0.9
1.0
870 890 910 930 950 970 990 1010
Fig. 6
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h30
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSE3455/5455
Coupling CharacteristicsSE3455 with SD3443 gra_021.ds4
Window-to-window distance - inches
Nor
mal
ized
ligh
t cu
rren
t
0.0
0.2
0.4
0.6
0.8
1.0
0.0 0.2 0.4 0.6 0.8 1.0
Fig. 7 Coupling CharacteristicsSE5455 with SD5443 gra_024.ds4
Lens-to-lens distance - inches
Nor
mal
ized
ligh
t cu
rren
t
0.0
0.2
0.4
0.6
0.8
1.0
0 2 4 6 7 9 1 3 5 8
Fig. 8
Radiant Intensity vsCase Temperature gra_022.ds4
Case temperature - °C
Nor
mal
ized
rad
iant
int e
nsity
0.1
0.2 0.3 0.4 0.5
1.0
2.0 3.0 4.0 5.0
-75 -50 -25 0 25 50 75 100 125
Normalized to IF = 100 mA TA = 25 °C
Fig. 9
All Performance Curves Show Typical Values
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 31
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
AlGaAs Infrared Emitting DiodeSE3470/5470
DESCRIPTION
FEATURESTO-46 metal can package•
Choice of flat window or lensed package•
90¡ or 20¡ (nominal) beam angle option•
880 nm wavelength•
Higher output power than GaAs at equivalent drive currents
•
Wide operating temperature range (55¡C to +125¡C)
•
Ideal for high pulsed current applications•
Mechanically and spectrally matched to SD3421/5421 photodiode, SD3443/5443/5491phototransistor, SD3410/5410 photodarlington and SD5600 series Schmitt trigger
•
The SE3470/5470 series consists of aluminum gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3470 series has flat window cans providing a wide beam angle, while the SE5470 series has glass lensed cans providing a narrow beam angle. These devices typically exhibit 70% greater power output than gallium arsenide devices at the same forward current. The TO-46 packages offer high power dissipation capability and are ideally suited for operation in hostile environments.
INFRA-83.TIF
OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance
2 plc decimals ±0.020(0.51)
2. ANODE1. CATHODE (TAB)
LEADS:
.046(1.17)
.036(.91)
2
1
DIA.(.460)
.018
MIN.(12.70)
.500
(0.36).015
.140 (3.56)
.153 (3.89)
DIA..137 (3.48)
.160 (4.06)
.188 (4.77)
.178 (4.52)DIA.
DIA..208 (5.28).219 (5.56)
.100(2.54)DIA NOM
45°
.048(1.22)
.028(.71)
(CASE)
DIM_005a.ds4
SE3470
2. ANODE (CASE)1. CATHODE (TAB)
LEADS:
.046(1.17)
.036(.91)
2
1
DIA.(.460)
.018
MIN.(12.70)
.500
(0.36).015
5.08
.200
DIA..137 (3.48)
.160 (4.06)
.188 (4.77)
.178 (4.52)DIA.
DIA..208 (5.28).219 (5.56)
.100(2.54)DIA NOM
45°
.048(1.22)
.028(.71)
.224 (5.89)
.247 (6.27)
DIM_005b.ds4
SE5470
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h32
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
AlGaAs Infrared Emitting DiodeSE3470/5470
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current 100 mAPeak Forward Current 3 A
(1µs pulse width, 300 pps)Power Dissipation 150 mW [À] Operating Temperature Range -55¡C to 125¡C
Storage Temperature Range -65¡C to 150¡CSoldering Temperature (10 sec) 260¡C
Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 1.43 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 33
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
AlGaAs Infrared Emitting DiodeSE3470/5470
Radiant Intensity vsAngular Displacement (SE3470) gra_017.ds4
Angular displacement - degrees
Rel
ativ
e in
tens
ity
0.0
0.1
0.2
0.3 0.4
0.5
0.6
0.7
0.8 0.9
1.0
-60 -45 -30 -15 0 +15 +30 +45 +60
Fig. 1 Radiant Intensity vsAngular Displacement (SE5470) gra_023.ds4
Angular displacement - degrees
Rel
ativ
e in
tens
ity
0.0
0.1
0.2
0.3 0.4
0.5
0.6
0.7
0.8 0.9
1.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Fig. 2
Radiant Intensity vsForward Current gra_018.ds4
Forward current - mA
Nor
mal
ized
rad
iant
in
tens
ity -
%
0.0
50
100
150
200
250
0 100 200 300 400 500
Pulsed
Fig. 3 Forward Voltage vsForward Current gra_026.ds4
Forward current - mA
For
war
d vo
ltage
- V
1.0
1.1
1.2
1.3
1.4
1.5
1.6
0 20 40 60 80 100
Fig. 4
Forward Voltage vsTemperature gra_025.ds4
Temperature - C
For
war
d vo
ltage
- V
1.30
1.35
1.45
1.50
1.60
1.65
1.70
-50 -25 0 25 50 75 100 125
I
1.55
1.40
Fig. 5 Coupling CharacteristicsSE3470 with SD3443 gra_021.ds4
Window-to-window distance - inches
Nor
mal
ized
ligh
t cu
rren
t
0.0
0.2
0.4
0.6
0.8
1.0
0.0 0.2 0.4 0.6 0.8 1.0
Fig. 6
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h34
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
AlGaAs Infrared Emitting DiodeSE3470/5470
Spectral Bandwidth gra_011.ds4
Wavelength - nm
Rel
ativ
e in
tens
ity
0.0
0.1 0.2
0.3 0.4
0.5 0.6
0.7
0.8 0.9
1.0
760 800 840 880 920 960 1000
Fig. 7 Radiant Intensity vsCase Temperature gra_022.ds4
Case temperature - °C
Nor
mal
ized
rad
iant
int e
nsity
0.1
0.2 0.3 0.4 0.5
1.0
2.0 3.0 4.0 5.0
-75 -50 -25 0 25 50 75 100 125
Normalized to IF = 100 mA TA = 25 °C
Fig. 8
Coupling CharacteristicsSE5470 with SD5443 gra_024.ds4
Lens-to-lens distance - inches
Nor
mal
ized
ligh
t cu
rren
t
0.0
0.2
0.4
0.6
0.8
1.0
0 2 4 6 7 9 1 3 5 8
Fig. 9
All Performance Curves Show Typical Values
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 35
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSEP8505
DESCRIPTION
FEATUREST-1 package•
15¡ (nominal) beam angle•
935 nm wavelength•
Consistent on-axis optical properties•
Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105 photodarlington
•
The SEP8505 is a gallium arsenide infrared emitting diode transfer molded in a T-1 red plastic package. Transfer molding of this device assures superior optical centerline performance compared to other molding processes. Lead lengths are staggered to provide a simple method of polarity identification.
(.51)
.020 SQ. LEAD TYP
.050
(1.27)
DIA.(3.94)
.155
ANODE
CATHODE
DIA..125 (3.18)
.115 (2.92)
MIN.(12.7).500
.03(.76).180 (4.57)
.200 (5.08)
MAX.(6.35).250
.05(1.27)
DIM_101.ds4
INFRA-55.TIF
OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance
2 plc decimals ±0.020(0.51)
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h36
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSEP8505
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current 50 mAPower Dissipation 70 mW [À]
Operating Temperature Range -40¡C to 85¡CStorage Temperature Range -40¡C to 85¡CSoldering Temperature (5 sec) 240¡C
Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.18 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 37
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSEP8505
Radiant Intensity vsAngular Displacement gra_027.ds4
Angular displacement - degrees
Rel
ativ
e in
tens
ity
0.0
0.1
0.2
0.3 0.4
0.5
0.6
0.7
0.8 0.9
1.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Fig. 1 Radiant Intensity vsForward Current gra_028.ds4
Forward current - mA
Nor
mal
ized
rad
iant
int e
nsity
0.1
0.2
0.5
1.0
2.0
5.0
10.0
10 20 30 40 50 100
TA = 25 °C
Fig. 2
Forward Voltage vsForward Current gra_003.ds4
Forward current - mA
For
war
d vo
ltage
- V
1.05
1.10
1.15
1.20
1.25
1.30
1.35
1.40
0 20 40 60
Fig. 3 Forward Voltage vsTemperature gra_207.ds4
Temperature - °C
For
war
d vo
ltage
- V
1.00
1.05
1.15
1.20
1.30
1.35
1.40
-40 -15 10 35 60 85
IF = 20 mA
1.25
1.10
Fig. 4
Spectral Bandwidth gra_005.ds4
Wavelength - nm
Rel
ativ
e in
tens
ity
0.0
0.1 0.2
0.3 0.4
0.5 0.6
0.7
0.8 0.9
1.0
870 890 910 930 950 970 990 1010
Fig. 5 Coupling Characteristicswith SDP8405 gra_029.ds4
Lens-to-lens separation - inches
Ligh
t cu
rren
t - m
A
0.1
0.2
0.4
1
2
4
10
0.01 0.2 0.4 0.7 1 0.02 0.04 0.1
0.7
7
VCE = 5 VIF = 25 mATA = 25 °C
Fig. 6
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h38
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSEP8505
Relative Power Output vsFree Air Temperature gra_130.ds4
TA - Free-air temperature - (°C)
Rel
ativ
e po
wer
out
put
0.1
1.0
10
-50 -25 0 +25 +50 +75 +100
0.2
0.5
2.0
5.0
IF = 30 mAIF = 20 mA
IF = 10 mA
IF = 40 mA
Fig. 7
All Performance Curves Show Typical Values
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 39
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSEP8506
DESCRIPTION
FEATURESSide-emitting plastic package•
50¡ (nominal) beam angle•
935 nm wavelength•
Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger
•
The SEP8506 is a gallium arsenide infrared emitting diode molded in a side-emitting red plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package.
DIM_071.ds4
INFRA-20.TIF
OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance
2 plc decimals ±0.020(0.51)
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h40
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSEP8506
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current 50 mAPower Dissipation 100 mW [À]
Storage Temperature Range -40¡C to 85¡COperating Temperature Range -40¡C to 85¡CSoldering Temperature (5 sec) 240¡C
Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 41
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSEP8506
Radiant Intensity vsAngular Displacement gra_030.ds4
Angular displacement - degrees
Rel
ativ
e in
tens
ity
0.0
0.1
0.2
0.3 0.4
0.5
0.6
0.7
0.8 0.9
1.0
-60 -45 -30 -15 0 +15 +30 +45 +60
Fig. 1 Radiant Intensity vsForward Current gra_028.ds4
Forward current - mA
Nor
mal
ized
rad
iant
int e
nsity
0.1
0.2
0.5
1.0
2.0
5.0
10.0
10 20 30 40 50 100
TA = 25 °C
Fig. 2
Forward Voltage vsForward Current gra_003.ds4
Forward current - mA
For
war
d vo
ltage
- V
1.05
1.10
1.15
1.20
1.25
1.30
1.35
1.40
0 20 40 60
Fig. 3 Forward Voltage vsTemperature gra_207.ds4
Temperature - °C
For
war
d vo
ltage
- V
1.00
1.05
1.15
1.20
1.30
1.35
1.40
-40 -15 10 35 60 85
IF = 20 mA
1.25
1.10
Fig. 4
Spectral Bandwidth gra_005.ds4
Wavelength - nm
Rel
ativ
e in
tens
ity
0.0
0.1 0.2
0.3 0.4
0.5 0.6
0.7
0.8 0.9
1.0
870 890 910 930 950 970 990 1010
Fig. 5 Coupling Characteristicswith SDP8406 gra_031.ds4
Lens-to-lens separation - inches
Ligh
t cur
rent
- m
A
0.1
0.2
0.4 0.6
1.0
2
4 6
10
0.01 0.02 0.05 0.1 0.2 0.5 1.0
IF = 20 mAVCE = 5V
TA = 25 °C
Fig. 6
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h42
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSEP8506
Relative Power Output vsFree Air Temperature gra_130.ds4
TA - Free-air temperature - (°C)
Rel
ativ
e po
wer
out
put
0.1
1.0
10
-50 -25 0 +25 +50 +75 +100
0.2
0.5
2.0
5.0
IF = 30 mAIF = 20 mA
IF = 10 mA
IF = 40 mA
Fig. 7
All Performance Curves Show Typical Values
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 43
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSEP8507
DESCRIPTION
FEATURESEnd-emitting plastic package•
135¡ (nominal) beam angle•
935 nm wavelength•
Low profile for design flexibility•
Mechanically and spectrally matched to SDP8407 phototransistor
•
The SEP8507 is a gallium arsenide infrared emitting diode molded in an end-emitting red plastic package. The chip is positioned to emit radiation from the top of the package. Lead lengths are staggered to provide a simple method of polarity identification.
DIM_009.cdr
INFRA-18.TIF
OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.008(0.20)Tolerance
2 plc decimals ±0.020(0.51)
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h44
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSEP8507
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current 60 mAPower Dissipation 100 mW [À]
Operating Temperature Range -40¡C to 85¡CStorage Temperature Range -40¡C to 85¡CSoldering Temperature (5 sec) 240¡C
Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.66 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 45
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSEP8507
Radiant Intensity vsAngular Displacement gra_032.ds4
Angular displacement - degrees
Rel
ativ
e in
tens
ity
0.0
0.1 0.2
0.3 0.4
0.5
0.6 0.7
0.8 0.9
1.0
-160 -120 -80 -40 0 +40 +80 +120 +160
Fig. 1 Radiant Intensity vsForward Current gra_028.ds4
Forward current - mA
Nor
mal
ized
rad
iant
int e
nsity
0.1
0.2
0.5
1.0
2.0
5.0
10.0
10 20 30 40 50 100
TA = 25 °C
Fig. 2
Forward Voltage vsForward Current gra_003.ds4
Forward current - mA
For
war
d vo
ltage
- V
1.05
1.10
1.15
1.20
1.25
1.30
1.35
1.40
0 20 40 60
Fig. 3 Forward Voltage vsTemperature gra_207.ds4
Temperature - °C
For
war
d vo
ltage
- V
1.00
1.05
1.15
1.20
1.30
1.35
1.40
-40 -15 10 35 60 85
IF = 20 mA
1.25
1.10
Fig. 4
Spectral Bandwidth gra_005.ds4
Wavelength - nm
Rel
ativ
e in
tens
ity
0.0
0.1 0.2
0.3 0.4
0.5 0.6
0.7
0.8 0.9
1.0
870 890 910 930 950 970 990 1010
Fig. 5 Relative Power Output vsFree Air Temperature gra_130.ds4
TA - Free-air temperature - (°C)
Rel
ativ
e po
wer
out
put
0.1
1.0
10
-50 -25 0 +25 +50 +75 +100
0.2
0.5
2.0
5.0
IF = 30 mAIF = 20 mA
IF = 10 mA
IF = 40 mA
Fig. 6
All Performance Curves Show Typical Values
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h46
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
GaAs Infrared Emitting DiodeSEP8507
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 47
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
AlGaAs Infrared Emitting DiodeSEP8705
DESCRIPTION
FEATUREST-1 package•
15¡ (nominal) beam angle•
880 nm wavelength•
Consistent optical properties•
Higher output than GaAs at equivalent drive current
•
Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105 photodarlington
•
The SEP8705 is an aluminum gallium arsenide infrared emitting diode transfer molded in a T-1 smoke gray plastic package. Transfer molding of this device assures superior optical centerline performance compared to other molding processes. These devices typically exhibit 70% greater power intensity compared to GaAs devices at the same forward current. Lead lengths are staggered to provide a simple method of polarity identification.
(.51)
.020 SQ. LEAD TYP
.050
(1.27)
DIA.(3.94)
.155
ANODE
CATHODE
DIA..125 (3.18)
.115 (2.92)
MIN.(12.7).500
.03(.76).180 (4.57)
.200 (5.08)
MAX.(6.35).250
.05(1.27)
DIM_101.ds4
INFRA-55.TIF
OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance
2 plc decimals ±0.020(0.51)
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h48
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
AlGaAs Infrared Emitting DiodeSEP8705
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current 50 mAPower Dissipation 70 mW [À]
Operating Temperature Range -40¡C to 85¡CStorage Temperature Range -40¡C to 85¡CSoldering Temperature (5 sec) 240¡C
Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.18 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 49
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
AlGaAs Infrared Emitting DiodeSEP8705
Radiant Intensity vsAngular Displacement gra_027.ds4
Angular displacement - degrees
Rel
ativ
e in
tens
ity
0.0
0.1
0.2
0.3 0.4
0.5
0.6
0.7
0.8 0.9
1.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Fig. 1 Radiant Intensity vsForward Current gra_028.ds4
Forward current - mA
Nor
mal
ized
rad
iant
int e
nsity
0.1
0.2
0.5
1.0
2.0
5.0
10.0
10 20 30 40 50 100
TA = 25 °C
Fig. 2
Forward Voltage vsForward Current gra_201.ds4
Forward current - mA
For
war
d vo
ltage
- V
1.0
1.1
1.2
1.3
1.4
1.5
1.6
0 10 20 30 40 50
Fig. 3 Forward Voltage vsTemperature gra_208.ds4
Temperature - °C
For
war
d vo
ltage
- V
1.20
1.25
1.35
1.40
1.50
1.55
1.60
-40 -15 10 35 60 85
IF = 20 mA
1.45
1.30
Fig. 4
Spectral Bandwidth gra_011.ds4
Wavelength - nm
Rel
ativ
e in
tens
ity
0.0
0.1 0.2
0.3 0.4
0.5 0.6
0.7
0.8 0.9
1.0
760 800 840 880 920 960 1000
Fig. 5 Coupling Characteristicswith SDP8405 gra_029.ds4
Lens-to-lens separation - inches
Ligh
t cu
rren
t - m
A
0.1
0.2
0.4
1
2
4
10
0.01 0.2 0.4 0.7 1 0.02 0.04 0.1
0.7
7
VCE = 5 VIF = 25 mATA = 25 °C
Fig. 6
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h50
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
AlGaAs Infrared Emitting DiodeSEP8705
Relative Power Output vsFree Air Temperature gra_130.ds4
TA - Free-air temperature - (°C)
Rel
ativ
e po
wer
out
put
0.1
1.0
10
-50 -25 0 +25 +50 +75 +100
0.2
0.5
2.0
5.0
IF = 30 mAIF = 20 mA
IF = 10 mA
IF = 40 mA
Fig. 7
All Performance Curves Show Typical Values
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 51
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
AlGaAs Infrared Emitting DiodeSEP8706
DESCRIPTION
FEATURESSide-looking plastic package•
50¡ (nominal) beam angle•
880 nm wavelength•
Higher output power than GaAs at equivalent drive currents
•
Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger
•
The SEP8706 is an aluminum gallium arsenide infrared emitting diode molded in a side-emitting smoke gray plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current.
DIM_071.ds4
INFRA-20.TIF
OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance
2 plc decimals ±0.020(0.51)
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h52
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
AlGaAs Infrared Emitting DiodeSEP8706
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current 50 mAPower Dissipation 100 mW [À]
Operating Temperature Range -40¡C to 85¡CStorage Temperature Range -40¡C to 85¡CSoldering Temperature (5 sec) 240¡C
Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 53
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
AlGaAs Infrared Emitting DiodeSEP8706
Radiant Intensity vsAngular Displacement gra_030.ds4
Angular displacement - degrees
Rel
ativ
e in
tens
ity
0.0
0.1
0.2
0.3 0.4
0.5
0.6
0.7
0.8 0.9
1.0
-60 -45 -30 -15 0 +15 +30 +45 +60
Fig. 1 Radiant Intensity vsForward Current gra_028.ds4
Forward current - mA
Nor
mal
ized
rad
iant
int e
nsity
0.1
0.2
0.5
1.0
2.0
5.0
10.0
10 20 30 40 50 100
TA = 25 °C
Fig. 2
Forward Voltage vsForward Current gra_201.ds4
Forward current - mA
For
war
d vo
ltage
- V
1.0
1.1
1.2
1.3
1.4
1.5
1.6
0 10 20 30 40 50
Fig. 3 Forward Voltage vsTemperature gra_208.ds4
Temperature - °C
For
war
d vo
ltage
- V
1.20
1.25
1.35
1.40
1.50
1.55
1.60
-40 -15 10 35 60 85
IF = 20 mA
1.45
1.30
Fig. 4
Spectral Bandwidth gra_011.ds4
Wavelength - nm
Rel
ativ
e in
tens
ity
0.0
0.1 0.2
0.3 0.4
0.5 0.6
0.7
0.8 0.9
1.0
760 800 840 880 920 960 1000
Fig. 5 Coupling Characteristicswith SDP8406 gra_031.ds4
Lens-to-lens separation - inches
Ligh
t cur
rent
- m
A
0.1
0.2
0.4 0.6
1.0
2
4 6
10
0.01 0.02 0.05 0.1 0.2 0.5 1.0
IF = 20 mAVCE = 5V
TA = 25 °C
Fig. 6
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h54
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
AlGaAs Infrared Emitting DiodeSEP8706
Relative Power Output vsFree Air Temperature gra_130.ds4
TA - Free-air temperature - (°C)
Rel
ativ
e po
wer
out
put
0.1
1.0
10
-50 -25 0 +25 +50 +75 +100
0.2
0.5
2.0
5.0
IF = 30 mAIF = 20 mA
IF = 10 mA
IF = 40 mA
Fig. 7
All Performance Curves Show Typical Values
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 55
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
AlGaAs Infrared Emitting DiodeSEP8736
DESCRIPTION
FEATURESSide-looking plastic package•
10¡ (nominal) beam angle•
880 nm wavelength•
Enhanced coupling distance•
Mechanically and spectrally matched to SDP8436 phototransistor
•
The SEP8736 is an aluminum gallium arsenide infrared emitting diode molded in a side-emitting smoke gray plastic package. The body and integral lens design combines the mounting advantage of a side-emitting package with the narrow emission pattern of a T-1 style device. The SEP8736 IRED is designed for those applications which require longer coupling distances than standard side-emitting devices can provide, such as touch screens. The IRED is also especially well suited to applications in which adjacent channel crosstalk could be a problem.
DIM_070.ds4
INFRA-80.TIF
OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance
2 plc decimals ±0.020(0.51)
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h56
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
AlGaAs Infrared Emitting DiodeSEP8736
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current 50 mAPower Dissipation 100 mW [À]
Operating Temperature Range -40¡C to 85¡CStorage Temperature Range -40¡C to 85¡CSoldering Temperature (5 sec) 240¡C
Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 57
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
AlGaAs Infrared Emitting DiodeSEP8736
Radiant Intensity vsAngular Displacement gra_097.ds4
Angular displacement - degrees
Rel
ativ
e in
tens
ity
0.0
0.1
0.2
0.3 0.4
0.5
0.6
0.7
0.8 0.9
1.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Fig. 1 Radiant Intensity vsForward Current gra_033.ds4
Forward current - mA
Nor
mal
ized
rad
iant
in
tens
ity
0.01
0.10
1.00
10.00
0.1 1.0 10 100
TA = 25 °C
Fig. 2
Forward Voltage vsForward Current gra_201.ds4
Forward current - mA
For
war
d vo
ltage
- V
1.0
1.1
1.2
1.3
1.4
1.5
1.6
0 10 20 30 40 50
Fig. 3 Forward Voltage vsTemperature gra_208.ds4
Temperature - °C
For
war
d vo
ltage
- V
1.20
1.25
1.35
1.40
1.50
1.55
1.60
-40 -15 10 35 60 85
IF = 20 mA
1.45
1.30
Fig. 4
Spectral Bandwidth gra_011.ds4
Wavelength - nm
Rel
ativ
e in
tens
ity
0.0
0.1 0.2
0.3 0.4
0.5 0.6
0.7
0.8 0.9
1.0
760 800 840 880 920 960 1000
Fig. 5 Coupling Characteristicswith SDP8436 gra_034.ds4
Lens-to-lens separation - inches
Nor
mal
ized
ligh
t cu
rren
t
0.001
0.1
1.0
10
0.1 1.0 10
0.01
Fig. 6
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h58
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
AlGaAs Infrared Emitting DiodeSEP8736
Relative Power Output vsFree Air Temperature gra_130.ds4
TA - Free-air temperature - (°C)
Rel
ativ
e po
wer
out
put
0.1
1.0
10
-50 -25 0 +25 +50 +75 +100
0.2
0.5
2.0
5.0
IF = 30 mAIF = 20 mA
IF = 10 mA
IF = 40 mA
Fig. 7
All Performance Curves Show Typical Values
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 59
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com