6th and 7th Generation IGBT Module for Industrial Applications

Mitsubishi Electric Corporation

T.Radke K.Masuda

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Outline 1. Background

2. 6th generation IGBT module 2.1 Thermal resistance 2.2 ∆Tj-c Performance Benchmark 2.3 Chip comparison between 6th and 6.1th 3. 7th generation IGBT module 3.1 Package technologies 3.2 Chip technologies 3.3 Power Loss 3.4 Summary

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Industrial applications

1. Background

Medical device

Motor control

Lift Robotics UPS

IGBT module Renewable power generation

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Common requirements are “High reliability”, “Low loss”, “Compact” and “Lightweight”.

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Feature ・Low Rth(j-c) by AlN isolation ・2 types of chip technologies appling 6th gen. and 6.1th gen. chip ・Tjmax=175degC ・Low gate capacitance

2. 6th generation IGBT module Features

Package type MPD, S-Series

Package type NX-Series

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62mm 80mm

80mm 110mm

140mm

130mm 150mm

166mm

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2.1 Thermal resistance

Mitsubishi 6th Gen. AlN

Conventional module Al2O3

Module Rating 6th Gen. Rth(j-c)Q

Al2O3Module Rth(j-c)Q

Al2O3 Module is x % Higher

100A / 1200V CIB 0.20 K/W 0.29K/W +45%

150A / 1200V (6in1) 0.013 K/W 0.02 K/W +54%

450A /1200V (2in1) 0.044 K/W 0.066 K/W +50%

100%

700%

0%

100%

200%

300%

400%

500%

600%

700%

800%

AlN Al2O3

Specific thermal resistance of the substrate (normalized)

IGBT chip

Solder

Cu pattern

Cu layer

Substrate

Solder

Cu base plate

Structure of IGBT module

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2.2 ∆Tj-c Performance Benchmark

ΔTj-c=35（Tcase=115, Tj=150) , fc=5kHz , cos(φ)=0.8 , VCC=600V , m=0.9

6th gen. IGBT Module

Conventional Al2O3 Module A Conventional Al2O3 Module B

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no change st

ruct

ure

Te

rmin

atio

n

Shrinking

6th Gen. 6.1th Gen.

IGB

T D

iod

e

2.3 Chip comparison between 6th and 6.1th

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Err is reduced

CM450DX-24S(6th gen.) CM450DX-24S1(6.1th gen.) Condition : VCC=600V, Ic=450A, VGE=+15/-15V, RG=0Ω, Tj=150 C-140917-01

2.3 Diode Chip trade-off

6.1th gen. diode trade-off is optimized for lower switching losses

0

10

20

30

40

50

60

0 0.5 1 1.5 2 2.5

Err [

mJ

]

VF [V]

Err vs. VF trade-off

6.1th gen.CM450DX-24S1

6th gen. CM450DX-24S

Company I

Company F

(datasheet values @ IC=450A VCC=600V Tj=150°C)

14% Err

reduction

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Conventional Module A Conventional Module B

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1.Package technologies Low Rth(j-c) by AlN isolation →High power capability compared with Al2O3 module. →Same ΔTj as Al2O3 module by 55% more power @600A 2. Chip technologies →6.1th is optimized for high fc application

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7th gen. IGBT module

6th gen. IGBT module

• Package optimization • Chip technology improvement

2. 6th generation IGBT module

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・High reliability ・Low inductance ・Compact ・Lightweight

Concept of 7th gen. IGBT module

IGBT Package

Diode

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・Low VCEsat ・Low Eoff

・Low VF

・Low Qrr (=Low Eon + Err)

・Suppress snap-off recovery

High reliability, Low losses, Compact and Lightweight.

3. 7th generation IGBT module

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Thermal resistance

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The Internal thermal resistance of the 7th gen. is a half of the 6th gen.

Thermal resistance simulation

3.1.1 Substrate

Grease

0.0

0.2

0.4

0.6

0.8

1.0

1.2

Rth

(R

atio

)

Rth(j-c)

Rth(c-s)

0.66

0.34

0.34

0.30

Half

Condition: Ta=25 , U=800 W/m2・K, Same chip size.

+ Grease + PC-TIM

Chip

Base plate

40

85

63

6th gen. 7th gen.

TIM

Heat dissipation simulation

6th gen. 7th gen.

Condition: Same chip size.

PC-

※PC-TIM: Phase Change – Thermal Interface Matrial

AlN Si3N4

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After 300cyc. After 1000cyc. Before test

7th gen. structure Conventional structure SAT pictures before and after thermal cycling test (-40～125)

Before test

Experimental result

Corner of Cu pattern

No crack had been observed until 1000cyc., which is 3 times larger.

3.1.1 Substrate

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Package inductance

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By using laminated main terminals, package inductance is reduced by 30%.

6th generation 7th generation

US bonding

laminate area

3.1.2 Main terminal

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Item 6th gen. 7th gen. Improvement

Thermal resistance (Ratio) 1 0.5 Reduction of 50%

Thermal cycling (Ratio) 1 3 ～ Increasing 3 times

Inductance (Ratio) 1 0.7 Reduction of 30%

Package size (W*D*H) 110×80×29 mm 108×62×30mm Reduction of 20%

Weight 580 g 320 g Reduction of 45%

6th generation 7th generation

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1200V/600A, dual

New compact and lightweight package is realized.

3.1.3 Results

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3.2.1 IGBT chip

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Cross section structure

7th gen. IGBT has better static and dynamic characteristics.

3.2 Chip technologies

Key point 1. Thin N- drift layer Low VCEsat

Low Eoff

2. Optimized cell design easier controllability of dV/dt by Rg

6th/6.1th gen. 7th gen.

Rg [Ω]

dV

/dt

[kV

/μs]

(M

AX

)

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0

5

10

15

20

25

30

35

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The 7th gen. IGBT has the better VCEsat and Eoff.

JC vs. VCEsat

VC

Esat

[V

]

JC vs. Eoff

Condition: VCC=600 V, Ta=125

E off [

mJ]

JC [A/cm2]

6th gen.

7th gen.

500 100 300 200 400 0

Condition: Ta=125

Experimental result

JC [A/cm2]

0

0.5

1.5

2.5

2.0

1.0

3.0

3.5

500 400 100 300 200 0

7th gen.

6th gen.

3.2.1 IGBT chip

Condition: Tj=125 Condition: Vcc=600V, Tj=125

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Key point 1. Thinner N drift layer Low VF Low Qrr Low (Err + Eon)

2. N+/P cathode structure Suppress snap-off recovery

Cross section structures

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Anode

Cathode

N+

N

P

P N+

N

P

※RFC - diode: Relaxed Field of Cathode - diode

6th gen.: N buffer diode 7th gen.: RFC diode

Reduced wafer thickness

Conventional diode

RFC diode

3.2.2 Diode chip

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15% reduction

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Condition: fc=10 kHz, dv/dt =10 kV/μs, VCC=600 V, Tj=125 , Same chip size

PF = 0.85 Modulation = 1 3 phase modulation

In 7th gen. IGBT module, the power loss is reduced by 15%.

Power loss simulation

3.3 Power Loss

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Package technologies New Compact and Light weight package 50% reduction of internal thermal resistance 3 times higher thermal cycle capability or more 30% reduction of package inductance

Chip technologies 30% reduction of Qrr-VF trade-off 15% reduction of total loss in inverter operation

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High performance in a Compact and Light weight module.

3.4. Summary

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Thank you for your kind attention! 20 C-140917-01

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