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GaN LED with Ion Implanted Cold Zone. 班級 : 碩研電子二甲 姓名 : 陳詠升 授課教師 : 蔣富成. Device Fabrication. ICP-RIE. grown by MOCVD. Ni. Ni. P-GaN 0.16um. MQW 5 periods of InGaN/GaN. N-GaN 2um. Undope GaN. Sapphire. Schematic Sketch of the Fabricated. Status: Ion Energy : 180 keV - PowerPoint PPT Presentation
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GaN LED with Ion Implanted Cold Zone
班級 :碩研電子二甲姓名 :陳詠升授課教師 :蔣富成
112/04/21
Device Fabrication
Sapphire
Undope GaN
N-GaN 2um
MQW 5 periods of InGaN/GaN
P-GaN 0.16um
grown by MOCVDICP-RIE
Ni Ni
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Schematic Sketch of the Fabricated
CBL
P-GaN
Si ion implantation
Status:Ion Energy : 180 keVConcentration : 1.5x1013 cm-3
ITONi-mask Ni
Selective Area ActivationN2 ambient 750°C for 30 min
Ni NiNi
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The Microscopic Image 300X300um2
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Compare with Conventional LED
R = (L *ρ)/A L conventional
L ion implantation
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I-V Characteristic
6.7V 7.1V
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Forward Voltage-Temperature
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Junction Temperature-Injection Current Density
34.8 ° →39°
37° →60.6°
Heat generated can be dissipated into the ion-implanted cold zone
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Due to a smaller effective light emitting area
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ConclusionAdvantage:
2. Re-distribution of carrier and temperature enhances efficient light emission。
4. Reduce internal temperature to improve the reliability 。
3. Efficient heat transfer to the ion implanted cold zone。
1. Vf of ion implanted LED is slightly lower than that of conventional LED。
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Reference• 1. Yun-Wei Cheng, Hung-Hsien Chen, Min-Yung Ke, Cheng-Pin Chen, Jian Jang Huang
“Effect of selective ion-implanted p-GaN on the junction temperature of GaN-based light emitting diodes” Optics Communications, Volume 282, Issue 5, 1 March 2009, Pages 835-838
• 2. Lin, R.-M.; Jen-Chih Li; Yi-Lun Chou; Kuo-Hsing Chen; Yung-Hsiang Lin; Yuan-Chieh Lu; Meng-Chyi Wu; Hung, H.; Wei-Chi Lai, “Improving the Luminescence of InGaN–GaN Blue LEDs Through Selective Ring-Region Activation of the Mg-Doped GaN Layer, ” Photonics Technology Letter, IEEE Vol.19 June 15, 2007 Page:928-930.
• 3. M.A. Tsai, P. Yu, J.R. Chen, J.K. Huang, C.H. Chiu, H.C. Kuo, T.C. Lu, S.H. Lin, S.C. Wang, “Improving Light Output Power of the GaN-Based Vertical-Injection Light-Emitting Diodes by Mg+ Implanted Current Blocking Layer ” Photonics Technology Letters, IEEE Volume 21, Issue 11, June1, 2009 Page(s):688 – 690
