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Greetings from
Managing Power IntegrityStatus, Challenges and Opportunities
Managing Power IntegrityStatus, Challenges and Opportunities
IPC and Georgia TechIPC and Georgia Tech
Madhavan Swaminathan
Joseph M. Pettit Professor in Electronics
School of Electrical and Computer Engg.
Director, Interconnect and Packaging Research Center
Georgia Institute of Technology May 2011
OutlineOutline
� Motivation
� Overview of the past (Boring)
� Challenges and Opportunities for the Future (most Interesting)
Georgia Institute of Technology May 2011
Power DistributionMore than a Decade of Innovation with Many More to Come
Power DistributionMore than a Decade of Innovation with Many More to Come
96 97 98 99 00 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17
Gig
abit
and
Terab
it Era
� I/O Power Distribution� Return Path Discontinuities� Will the Low Target
Impedance concept stillwork ?
Year
Inte
gra
tion
+C
om
ple
xity
+C
ost
Target Impedance
Concept
Megabit and Gigabit Era
� Core Power Distribution� Low Target Impedance� SMT Capacitors� Power Distribution Tools
Georgia Institute of Technology May 2011
Signal Wires
PCB or Module
Active Device (IC)
Package
Core Circuits
(Communication within IC)I/O Circuits
(Communication outside IC)
Current
Vdd
Gnd
SSN
SSN in High-Speed / High-I/O Packages and High-Speed Boards
SSN in High-Speed / High-I/O Packages and High-Speed Boards
Georgia Institute of Technology May 2011
Power Distribution Affects Operating FrequencyPower Distribution Affects Operating Frequency
Reliability Wall
50MHz
Increase
In FMAX
+/- 100mV
+/- 50mV
1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80
825
785
745
705
665
625
FMAX (MHz)
VCC (V)
Georgia Institute of Technology May 2011
SSN causes JitterSSN causes Jitter
Uncertainty in Delay due to SSN causing Jitter
Varying Voltage Droop
on Power Supply dueto SSN
time
Output driver waveform
Vdd
Courtesy: Sony
Georgia Institute of Technology May 2011
MHz GHzFrequency
Pow
er/G
rou
nd
Net
wo
rk I
mp
eda
nce
Inductance by
VRM or
ESL of Bulk Capacitor
Capacitance given by
Discrete Decoupling Capacitors
Inductance given by
• ESL of Discrete Capacitor
• Mount Pad
• Power/Ground Traces
• Power/Ground Via
Capacitance by
Power/Ground Plane
Inductance by
Power/Ground Plane
& Pkg Via
KHz
Chip Decoupling
Capacitor
VRM
Power
Ground
Courtesy: Prof. J. Kim, KAIST, S. Korea and Ansoft Corporation
Impedance Vs Frequency and the role of various componentsImpedance Vs Frequency and the role of various components
in the Power Delivery Networkin the Power Delivery Network
Resonance
Anti-resonance
On-chip
CapacitanceTarget Impedance
Georgia Institute of Technology May 2011
DC Modelingof PDN
CAD Layoutof Packageand PCB
Acceptable Output Eye
Diagram
AC Modeling ofSignal and
Power Distribution
Macro-modeling
TransientSimulation
Evaluate Layout- Signal RL and IL- Substrate Coupling- PDN Impedance
- SSNEvaluate DC Drops- Voltage distribution
Create� Spice Sub-circuitof frequency response
Evaluate Drv/Rcv Path- Driver Non-linearity- Eye Diagrams
- Timing Margin
- Voltage Margin
Fix DC Drop
Fix Frequency
Response
FixVoltage &TimingMargin
Signal and Power
Integrity Modeling
Signal and Power
Integrity Modeling
Frequency Domain
Frequency to
Time Conversion
Time Domain
Courtesy: E-System Design
(www.e-systemdesign.com)
Georgia Institute of Technology May 2011
Multi-layered Finite Difference Method (M-FDM) High Frequency Signal and Power Integrity Analysis
Multi-layered Finite Difference Method (M-FDM) High Frequency Signal and Power Integrity Analysis
zT dJjuk ωµ−=+∇ )( 22
2
,,1,11,1,,
2 /)4( huuuuuu jijijijijijiT −+++=∇ +−+−
h
h
ui,j ui-1,j
ui,j+1
ui,j-1
ui+1,j
� Helmholtz Equation (Differential Form)
� Five point Finite Difference Approximation
R2
C2
L2
G2
R1
C1
L1+L2
G1L1+L2
R2
L2
R1
L1+L2
R2
L2
R1L1+L2
R2L2
L2
L2
L2
L2
Plane 1
Plane 2
Plane 3
L1
L2
Loop Inductance 1
Loop Inductance 2
United States Patent 7,895,540, 2/22/11
Georgia Institute of Technology May 2011
Coupling to Signal linesCoupling to Signal lines� Proprietary Signal Referencing Method
� Preserves sparse matrix
� Model return currents and coupling
Signal
Power
Ground
ε1
ε2
ε1
ε2
Signal
Ground
Power
ε1
ε2
Power
Signal
Ground
h2
h1
Courtesy: E-System Design (www.e-systemdesign.com)
Georgia Institute of Technology May 2011
64 bit32 bit
32mm 6 lyrFC Pkg
44mm 10 lyr
FC Pkg
Scalability, Memory and Timing
Note: Time per frequency point Sphinx for Signoff: www.e-systemdesign.com
Georgia Institute of Technology May 2011
Nets Measured
IBM 8 Layer Flip Chip PackageIBM 8 Layer Flip Chip Package
� Objectives
� Correlate Risetime, Delay
NEXT and FEXT for the IBM
Package
� All measurements done by IBM
using TDR with top and bottom
side probing
Courtesy: Alina Deutsch and Jason Morsey
IBM Yorktown Heights
Georgia Institute of Technology May 2011
Measurement Set-upMeasurement Set-up
� TDR/TDT Set-up with 40ps pulse transition
� High Frequency probes and cables usedCourtesy: Alina Deutsch and Jason Morsey
IBM Yorktown Heights
Georgia Institute of Technology May 2011
FEN
-4.0E-03
-2.0E-03
0.0E+00
2.0E-03
4.0E-03
6.0E-03
8.0E-03
1.0E-02
1.2E-02
1.4E-02
1.6E-02
0.E+00 5.E-10 1.E-09 2.E-09 2.E-09 3.E-09 3.E-09 4.E-09 4.E-09 5.E-09 5.E-09
Time (s)
Vo
lta
ge
(V
)
Measured
Simulated
Reflection
FEXT
12.1mV13.3mVFEXT Amplitude
SphinxMeasurementParameter
Far End Cross Talk (FEXT)Model to Hardware Correlation
Far End Cross Talk (FEXT)Model to Hardware Correlation
Georgia Institute of Technology May 2011
2007 2009 2013-2015 2015-2018 >2018
3D
Inte
rco
nnec
t C
om
ple
xit
y
Consumer
(Camera..)
CMOS ImageSensor
Digital Processor Consumer
(Mobile Phones..)
3D SRAM and
DRAM
Sensor on Logic
Low Power/Low Density
Multi-core CPU
Stacked Cache Memory
Multi-core CPU With Stacked
Memory
Consumer/ComputingMobile Phones
Networking
GPU
Multi-core/Server
Low/High Power/High Density/Multi-Functional
3D Integration
Multi-Level
System Integration
3D Multi-functional
Vertical Integration
Consumer/Computing/Bio/Sensing/RF
Interconnect and Packaging Center: Vision and Roadmapto Achieving Integration using 3D IC and Packaging Technologies
Major Driver
Georgia Institute of Technology May 2011
Mechanical Stresses
Joule Heating/Electro-migration
Thermal ManagementPower Delivery/DC/AC
Signal Integrity
Place & Route
Multi-physics and
Multi-scale
Environment
For the DesignOf Heterogeneous
Systems
ECE ME ME ECE
Coupling of Electrical, Thermal Coupling of Electrical, Thermal
and Mechanical Effectsand Mechanical Effects
A MultiA Multi--Physics and MultiPhysics and Multi--scale scale
ChallengeChallenge
Georgia Institute of Technology May 2011
Conductor (10um dia) Thin oxide layer (<1um)
Lossy silicon
substrate
100um
10-30um
Commercial Tools will choke due to the multi-scale geometries of these structures
Electromagnetic Modeling of Electromagnetic Modeling of TSVsTSVs
MultiMulti--scale Challengescale Challenge
Georgia Institute of Technology May 2011
� Uses Cylindrical
Basis Functions – CMBF, AMBF,PMBF
� Solves Electric Field Integral Equation
� Uses Acceleration Methods
� Computes frequency dependent RLGC parameters
� Computes accurate coupling and loss occurring due to
proximity effect
� Computes hot spots (current distribution)
� TSV position can be arbitrary
Modeling of Modeling of TSVsTSVs using an Integral Equation Based using an Integral Equation Based MeshlessMeshless ApproachApproach
Georgia Institute of Technology May 2011
Using Modal Basis Functions to Extract Electromagnetic Using Modal Basis Functions to Extract Electromagnetic
Properties of Properties of TSVsTSVs
×1
×5.0
×5.0
SE mode
PE-d mode
PE-q mode
Resultant current
density distribution
×1
×5.0
×5.0
SE mode
PE-d mode
PE-q mode
Resultant current
density distribution
-1.5 -1 -0.5 0 0.5 1 1.5
-1.5
-1
-0.5
0
0.5
1
1.5
-1.5 -1 -0.5 0 0.5 1 1.5
-1.5
-1
-0.5
0
0.5
1
1.5
-1.5 -1 -0.5 0 0.5 1 1.5
-1.5
-1
-0.5
0
0.5
1
1.5
-1.5 -1 -0.5 0 0.5 1 1.5
-1.5
-1
-0.5
0
0.5
1
1.5
-1.5 -1 -0.5 0 0.5 1 1.5
-1.5
-1
-0.5
0
0.5
1
1.5
Skin and Proximity Effect Modes
Polarization Effect Modes
Fundamental
1st Mode 2nd Mode
Ref: K. J. Han and M. Swaminathan, “Inductance and Resistance
Calculations in Three-Dimensional Packaging using
Cylindrical Conduction Mode Basis Functions”, IEEE Trans. on
Computer Aided Design of Integrated Circuits & Systems, ‘09
Georgia Institute of Technology May 2011
conductor series
resistance Conductor self
and mutual
inductances
TSV RLGC Parameter Extraction
Problem due to
increased conductance
(leakage)
Conductance
CapacitanceTSV Structure
L=100um
D=30um
P=60umGrounded Substrate
K. J. Han, M. Swaminathan and T. Bandhyopadyay, “Electromagnetic Modeling of Through-Silicon Via (TSV) Interconnections using Cylindrical Modal Basis Functions”, IEEE Trans. on Advanced Packaging, 2010
Georgia Institute of Technology May 2011
1 2 3 4 5
6 7 8 9 10
11 12 13 14 15
16 17 18 19 20
21 22 23 24 25
diameter=20um pitch=50umheight=200um
S12
S13
S15
S1_25
1 2 3 4 5
6 7 8 9 10
11 12 13 14 15
16 17 18 19 20
21 22 23 24 25
1 2 3 4 5
6 7 8 9 10
11 12 13 14 15
16 17 18 19 20
21 22 23 24 25
diameter=20um pitch=50umheight=200um
S12
S13
S15
S1_25
�TSV array Coupling- 5x5 TSV array
- Length: 200um
- Diameter:20um
- Pitch: 50um
- Oxide thickness: 0.1um
� Mutual Coupling between TSVs
- Mutual coupling reduced with increasing distance- But doesn’t Vanish
Coupling between TSVs – The Variability Problem
Georgia Institute of Technology May 2011
� Coupling waveform at different TSVs (10S/m)- the amplitude of the coupling waveform decrease with distance
- the time constant of the waveform increase with distance� Configuration
- A voltage pulse is applied at TSV-1
- Pulse Rise and Fall time : 100ps
- Substrate conductivity: 10 S/m or 0.01 S/m
0 0 .1 0 . 2 0 .3 0 . 4 0 .5 0 . 6 0 .7 0 . 8 0 .9 1
x 1 0- 8
-0 . 0 2
0
0 . 0 2
0 . 0 4
0 . 0 6
0 . 0 8
0 .1
Vo
ltag
e (
V)
T I M E
T S V - 2T S V - 2T S V - 2T S V - 2
T S V - 7T S V - 7T S V - 7T S V - 7T S V - 2 5T S V - 2 5T S V - 2 5T S V - 2 5
1 2 3 4 5
6 7 8 9 10
11 12 13 14 15
16 17 18 19 20
21 22 23 24 25
50 Ohm
50 Ohm
Voltage: 2V
1 2 3 4 5
6 7 8 9 10
11 12 13 14 15
16 17 18 19 20
21 22 23 24 25
50 Ohm
50 Ohm
Voltage: 2V
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
x 10-9
-0.005
0
0.005
0.01
0.015
0.02
0.025
Vo
lta
ge
(V
)
T IME
TSV-2TSV-2TSV-2TSV-2TSV-7TSV-7TSV-7TSV-7
TSV-25TSV-25TSV-25TSV-25
� Coupling waveform at different TSVs (0.01S/m)- the amplitude of the coupling waveform decrease with distance
- the waveforms decay much faster in high resistivity substrate
Crosstalk Waveforms – Low Vs High Resistivity Si
The Long Tail Problem �
Georgia Institute of Technology May 2011
50 Ohm
Random bit 101001….
50 Ohm
50 Ohm
Random bit 101001….
50 Ohm
50 Ohm
Random bit 101001….
50 Ohm
Random bit 101001….
50 Ohm
Random bit 101001….
50 Ohm
1 2 3 4 5
6 7 8 9 10
11 12 13 14 15
16 17 18 19 20
21 22 23 24 25
1 2 3 4 5
6 7 8 9 10
11 12 13 14 15
16 17 18 19 20
21 22 23 24 25
0 0.5 1 1.5 2 2.5 3 3.5 4
x 10-10
-0.5
0
0.5
1
1.5
2
2.5
3
Time (seconds)
Voltage (
V)
Eye Diagram of TSV-1
Eye height 2.01V
Jitter: 6.86ps
0 0.5 1 1.5 2 2.5 3 3.5 4
x 10-10
-0.5
0
0.5
1
1.5
2
2.5
3
Time (seconds)
Vo
lta
ge
(V
)
Eye Diagram of TSV-13Eye Diagram of TSV-13Eye Diagram of TSV-13Eye Diagram of TSV-13
Eye height: 1.8VJitter: 8.19ps
� Configuration- Each TSV is connected with a Random bit generator
- Bit sequences applied are different for each TSV- Bit rate: 5Gbps- Substrate conductivity: 10 S/m
Variability in TSV Performance
All TSVs switching with a PRBS
Georgia Institute of Technology May 2011
Design of PDNsDesign of PDNs
PCB power delivery network
Currently Practiced design
approach
Achieve a low-impedance path from the power supply to the die
ZPDN < Ztarget noise voltage < Vripple
avgI
rippleV
targetZ =
DDV
avgP
avgI =
Georgia Institute of Technology May 2011
Two Sides of a Power PlaneTwo Sides of a Power Plane
• Forms a cavity resonator
• Induces return path discontinuity
• Requires decoupling capacitors
• Needs computationally expensive
design procedures
• Provides low-impedance paths
Pros Cons
A new approach for PDN design is needed!
Georgia Institute of Technology May 2011
Vdd
Zo
Zo
TxPwr
Package
RxPwr
+
-
Package
Package
Package
Transmitter
Receiver
Ground Plane
Power Plane
Signal transmission line
Conventional Power Delivery NetworkConventional Power Delivery Network
� Return path discontinuity (RPD)
Return current
Return path
discontinuity
Cavity modesCavity modes
Signal current
Georgia Institute of Technology May 2011
� Transmission lines replace the power plane to convey power
� reduce the layer count
� remove the effect of cavity mode resonance
� Both the power and signal transmission lines are referenced to the same
ground plane
� prevent the RPD (THIS IS A HIGH IMPEDANCE PDN)
Power Transmission Line (1)Power Transmission Line (1)
*PTL : Power Transmission
Line
*
*
A. E. Engin and M. Swaminathan, “Power Transmission Lines: A New Interconnect Design to Eliminate Simultaneous
Switching Noise,” in Proc. ECTC, pp. 1139-1143, 2008
Georgia Institute of Technology May 2011
Power Transmission Line (2)Power Transmission Line (2)
Signal Current
Return
Current
Closed current loop
Georgia Institute of Technology May 2011
Limitation of Power Transmission Line(1)Limitation of Power Transmission Line(1)
� DC drop on PDN due to DC resistance
¾Vdd
½Vdd
IR drop data_in=0 data_in=1
Vdd
No current
Yikes
Power Supply Noise
Still exists
Georgia Institute of Technology May 2011
Limitation of Power Transmission Line(2)Limitation of Power Transmission Line(2)
� Impedance mismatch in PTL
� Line congestion issue
���� I/O driver per PTL will double the # of lines on PCB
Georgia Institute of Technology May 2011
Limitation of Power Transmission Line (3)Limitation of Power Transmission Line (3)
� Varying DC Level on PDN when extended to multi-bit I/Os
Cas
e
Data Pattern Eye Height
data1_tx data2_tx data1_tx data2_tx
1 High High 1V 1V
2High Low 1.25V 0
Low High 0 1.25V
3 Low Low 0 0
IPTL
IR drop
Eye height varies
Georgia Institute of Technology May 2011
Constant Current PTL (1)Constant Current PTL (1)
data_in=1
IR drop
data_in=0
Induces the same
amount of current
when data_in=1
Dummy path
IR drop
Georgia Institute of Technology May 2011
Constant Current PTL (2)Constant Current PTL (2)
� Constant current power transmission line (CC-PTL)
Constant current
through PTL
Constant IR drop
over PTL
Constant voltage
at TxPwr node
Continuously
charged PTL
No mismatch
effect
No Power supply Noise
Georgia Institute of Technology May 2011
Test VehiclesTest Vehicles
Via to power plane
Via to ground plane
2.6”-long
Dummy path
Driver
Via to ground plane
2.6”-long
Dummy path
Power transmission line
Driver
PTL-based test vehicle
Power-plane-based test
vehicle
Georgia Institute of Technology May 2011
Modeling and SimulationModeling and Simulation
Modeling in frequency domain Converted to Macromodel
Power-plane-based
TV
PTL-based TV
SPICE simulation setup
1st resonant frequency =
750MHz
1.5Gbps
Eye height improves by 19.6%
Jitter improves by 58%
Georgia Institute of Technology May 2011
Measurement SetupMeasurement Setup
Measurement setup
Dummy path
1.5Gbps
� The dummy path is implemented outside the chip due to the limitation of using an
off-the-shelf chip
� AC coupling capacitor is used
• to suppress the DC current flow
• to provide bias for the oscilloscope
Georgia Institute of Technology May 2011
With Source TerminationWith Source Termination
Plane-based TV CCPTL-based TV
Signal generator output
Eye height P-P jitter
Power plane 430mV 39.1ps
CCPTL 495mV 24.9ps
Improvement 15.1% 36.3%
• The supply voltage of 2.5V is used for the plane-based TV, while 3.47V is used for the
PTL-based TV.
Georgia Institute of Technology May 2011
Without Source TerminationWithout Source Termination
Plane-based TV CCPTL-based TV
Signal generator output
Eye height P-P jitter
Power plane 463mV 36ps
CCPTL 546mV 27ps
Improvement 17.9% 25%
• The same supply voltage of 2.5V is used for both test vehicles.
• Mismatch between the signal line and load termination is negligible so that the
source termination could be omitted.
Georgia Institute of Technology May 2011
RMS and P-P Jitter ComparisonRMS and P-P Jitter Comparison
� PTL: Both RMS and P-P Jitters have relatively monotonic behavior.
� Power plane: Both RMS and P-P Jitters have non-monotonic behavior,
having local peak values at the frequencies of power/ground plane
resonances.
Georgia Institute of Technology May 2011
Summary for Power Transmission LineSummary for Power Transmission Line
� The first demonstration of the CCPTL scheme has been presented –
A High Impedance PDN based concept
� Reduces decoupling capacitors required (not shown)
� Simulations are done to model the test vehicle in both frequency and
time domains.
� Based on measurements, using the CCPTL scheme
o improves the eye height by 15.1% and p-p jitter by 36.3% with source termination
o improves the eye height by 17.9% and p-p jitter by 25% with source termination
• The power consumption issue needs to be addressed
• This is being addressed through Constant Voltage Power Transmission
Line concept – ongoing work