Henri I. Boudinov Instituto de Física, Universidade Federal do Rio Grande do Sul Porto Alegre, RS,...
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Henri I. Boudinov Instituto de Física, Universidade Federal do Rio Grande do Sul Porto Alegre, RS, Brazil [email protected] 26_10_2009NanoSYD, MCI, SDU,
Henri I. Boudinov Instituto de Fsica, Universidade Federal do
Rio Grande do Sul Porto Alegre, RS, Brazil [email protected]
26_10_2009NanoSYD, MCI, SDU, Snderborg, Denmark Ion Beam Analysis
Part 1
Slide 3
The Porto Alegre Ion Beam Centre Interaction of ions with
matter Stopping power Rutherford Backskattering Spectrometry (RBS)
Channeling Compositional and defect depth profiles Proton Induced
X-ray emission (PIXE) Nuclear Reaction Analysis (NRA) Microbeam
analysis Outline
Slide 4
Porto Alegre Ion Beam Centre established in 1981 Controllable
Materials Modification Controllable Materials Modification
FacilitiesFacilities 0.2-3MV Tandetron 0.2-3MV Tandetron 30-500kV
Single Ended Implanter 30-500kV Single Ended Implanter 10-250kV
Medium Current Implanter 10-250kV Medium Current Implanter
Implantation 10keV ~15MeV (up to 1mA) Implantation 10keV ~15MeV (up
to 1mA) Sample size up to 10cmx10cm Sample size up to 10cmx10cm Hot
(800 o C) or cold (~LN) Hot (800 o C) or cold (~LN)
ApplicationsApplications Ion Beam Synthesis Ion Beam Synthesis
Buried and surface oxides and silicidesBuried and surface oxides
and silicides NanocristalsNanocristals Ion Implantation Ion
Implantation Defect Engineering Defect Engineering Proton beam
lithography Proton beam lithography potentially 1 m resolution to
10 m depthspotentially 1 m resolution to 10 m depths
Slide 5
Advanced Materials Analysis Advanced Materials Analysis
FacilitiesFacilities 3MV Tandem 3MV Tandem Techniques include RBS,
MEIS, ERDA, PIXE, NRA Techniques include RBS, MEIS, ERDA, PIXE, NRA
Channelling Spectroscopy for damage analysis Channelling
Spectroscopy for damage analysis Fully automated collection and
analysis Fully automated collection and analysis Micro-beam with
full scanning Micro-beam with full scanning External Beam for
vacuum sensitive samples External Beam for vacuum sensitive samples
ApplicationsApplications Thin Film Depth Profiling Thin Film Depth
Profiling Compositional Analysis Compositional Analysis Disorder
Profiling of Crystals Disorder Profiling of Crystals 3-D elemental
composition and mapping 3-D elemental composition and mapping Porto
Alegre Ion Beam Centre
Slide 6
Ion Beam Modification of Materials Ion Beam Modification of
Materials Ion Beam Analyses Ion Beam Analyses Basic Physics Basic
Physics Ion Beam for: Material ScienceMaterial Science Solid State
PhysicsSolid State Physics Atomic and Molecular PhysicsAtomic and
Molecular Physics
Slide 7
Charged Particles Charged Particles Electrons: e -, e +, -, +
10 m Electrons: e -, e +, -, + 10 m Ions: p +, He ++ ( ), etc.. 1 m
Ions: p +, He ++ ( ), etc.. 1 m Uncharged Particles Uncharged
Particles X-rays and -rays 10cm X-rays and -rays 10cm neutrons10cm
neutrons10cm Penetration of the Radiations in Solids
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Ion Implanter
Slide 14
3MV Tandetron accelerator
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E. Rutherford, 1911 N.Bohr, 1913-54, 1948 E. Fermi, 1924- H.A.
Bethe, 1930- F. Bloch, 1933- L. Landau, 1944-.... Penetration of
charged particles through matter Experimental ingredients Ions :
Z1=-1,1,2,...~100, electrons, muons, clusters,... energies ~1eV 10
11 eV Target : Z2 = 1,2,.. ~100, solids, gases, liquids,
plasma,...
Slide 17
Bohr, Bethe,...
Slide 18
Stopping Power dE/dx = N.S dE/dx energy loss [eV/nm] N atomic
density [nm -3 ] S stopping power [eV.nm 2 ]
Slide 19
dE/dx : two types
Slide 20
v ion
Electronic Energy loss (high energies) Classical theory dE/dx
~Z 1 2 ln (|Z 1 |) for Z 1 /v >> 1 Quantum theory dE/dx ~Z 1
2 First-order : for Z 1 /v