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Electric Power Components and Systems

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High-Efficiency Boost-Flyback Converter withVoltage Multiplier Cells for High Voltage GainApplication

António Manuel Santos Spencer Andrade, Everson Mattos & Mário Lúcio daSilva Martins

To cite this article: António Manuel Santos Spencer Andrade, Everson Mattos & Mário Lúcioda Silva Martins (2018): High-Efficiency Boost-Flyback Converter with Voltage MultiplierCells for High Voltage Gain Application, Electric Power Components and Systems, DOI:10.1080/15325008.2018.1430188

To link to this article: https://doi.org/10.1080/15325008.2018.1430188

Published online: 22 Mar 2018.

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Electric Power Components and Systems, 0(0):1–8, 2018Copyright C© Taylor & Francis Group, LLCISSN: 1532-5008 print / 1532-5016 onlineDOI: 10.1080/15325008.2018.1430188

High-Efficiency Boost-Flyback Converter with VoltageMultiplier Cells for High Voltage Gain ApplicationAntónio Manuel Santos Spencer Andrade, Everson Mattos, andMário Lúcio da Silva MartinsPower Electronics and Control Research Group - GEPOC, Federal University of Santa Maria, Santa Maria, Rio Grande do Sul,Brazil

CONTENTS

1. Introduction

2. Proposed High Step-Up Converter

3. Basic Operating Principle

4. Steady-State Analysis of Proposed Converters

5. Experimental Results

6. Conclusion

Acknowledgment

Funding

References

Index Terms: Boost converter, Flyback converter, high voltage gain, lowvoltage stress, voltage cells multiplier

Received 12 July 2016; accepted 12 January 2018

Address correspondence to António Manuel Santos Spencer Andrade,Cidade Universitária Bairro, GEPOC CT - Anexo B Av. Roraima n° 1000,Camobi, CEP: 97105-900, Santa Maria, RS, Brazil. E-mail:antoniom.spencer@gmail.com.

Color versions of one or more of the figures in the article can be found onlineat www.tandfonline.com/uemp.

Abstract—In this paper, a Boost-Flyback converter is presented. Itcombines the voltage multiplier cells to the secondary winding of thecoupled inductor in the Flyback part of the converter and a switchedcapacitor to the output capacitor of the Boost part of the converter.This converter shows attractive characteristics such as high voltagegain, low voltage stresses on semiconductor and a high efficiency at97.4%. A detailed description of the proposed converter is presentedand experimental results.

1. INTRODUCTION

The interest in Renewable Energy Systems, such as photo-voltaic panel (PV) or fuel cells (FC), is increasing, due to thedepletion of the fossils fuels and the climate changes. To pro-vide electricity from the PV or FC it is needed a high volt-age gain stage of power conversion to connect to an inverterstage or an AC microgrid, due to the lower voltage of PV mod-ules and Fuel Cells [1]–[4]. To obtain a high voltage for gridconnection, the PV modules can be connected in series. How-ever, the PV arrays are exposed by shadow effect. To avoidthese problems, high step-up converters can be used to providepower conversion to each PV module individually [5]–[7].

In the literature, the standard non-isolated step-up con-verter is the Boost topology. Theoretically, the Boost converterstatic voltage gain (M) can achieve approximately infinitewhen duty cycle approaches the unity. Nevertheless, inpractice, due to the intrinsic resistance, the M is limited [8].In concern to the isolated converter, the Flyback converterhas been an attractive topology, due to it comply with theapplication requirements, high voltage step-up, low volume,high reliability. On the other hand, there are some drawbackssuch as switching losses of the switch; reverse-recovery lossesof the diodes; high turn ratio of the coupled inductor increas-ing the leakage inductance, which deteriorates the systemefficiency [9]–[11]. To overcome these disadvantages, many

1

2 Electric Power Components and Systems, Vol. 0 (2018), No. 0

techniques are proposed in the literature. Basically, thesetechniques can be presented in three groups: with transformer(isolated) [12]–[22]; association of PWM converter (stacked,cascade) [23]–[28]; and voltage cells multiplier [29]–[38].

According to [39], to have a good performance of a highvoltage gain converter, the following conditions should beachieved:

1) Even without extreme duty cycle and high turns ratio,the efficiency and the voltage gain should be higher;

2) Leakage energy must be recycled for improving effi-ciency and alleviating large voltage spikes on thepower switches;

3) Low-voltage stresses on semiconductor devices for theadoption of low-voltage-rated semiconductor devices(such as low RDS(ON) MOSFET’s and Schottky diodes)are needed to improve efficiency.

Therefore, to overcome the drawback of the Flyback andboost converters, achieving high efficiency, high voltage gainand the features given in [39], this paper proposed a newconverter, where the generalized topology is depicted inFigure 1(a). As can be seen in Figure 1(a), the generalizedtopology is based on coupled inductor, switched capacitorscells and voltage multiplier cells. From this, Figure 1(b) ontop is the Boost-Flyback proposed by [40] and a resume of thetechniques given in [29]–[38] are in the middle of Figure 1(b),the switches capacitors and the multiplier cells. This paperproposes a high efficiency high step-up voltage gain con-verter which combines the features given below, the bottom ofFigure 1(b). The proposed converter has the following advan-tages: high voltage gain, low voltage stresses on switches anddiodes. This paper is organized in the following section. Ini-tially, is showed the basic operating principles, then the staticvoltage gain and the voltage stresses expressions are showed,and finally, experimental results are provided to verify the per-formance of the proposed converter.

2. PROPOSED HIGH STEP-UP CONVERTER

Figure 1(b) shows the circuit configuration of the proposedhigh step-up converter, which is constructed by Boost-Flybackconverter with a voltage multiplier cell and a switched capac-itor. The converter consists of one coupled inductor (Lm, N1

and N2), a single switch (S). In the primary of coupled induc-tor have a cell of switched capacitors which is composed ofthree capacitor

(C1, C2 and C3), three diodes (D1, D2 and D3) and a singleswitch S. In the secondary of the coupled inductor have a cellof voltage multiplier cell, which consist by the two capacitor(C4 and C5) and two diodes (D4 and D5). And have a diode

FIGURE 1. Proposed (a) Generalized topology. (b) Combi-nation of boost and flyback converter with voltage cells mul-tiplier module.

(D6), an output capacitor (Co) and a load, which in this paperis a resistive load (Ro). As can be seen, the proposed converteris an improved version of the converter is shown in the top ofFigure 1(b) [40]. Both converters are able to operate over theentire range of the duty cycle and operate with a simple PWMmodulation. On other hand, the voltage stress across on theactive switch and the coupled inductor turns ratio of the pro-posed converter are smaller, nevertheless the cost, size, weightand volume increase compared with the converter proposedin [40].

3. BASIC OPERATING PRINCIPLE

In this paper the operating principle in continuous conductionmode (CCM) is discussed. Figure 2 shows the key waveformsof the proposed converter. Figure 3(a)–(c) shows the equiv-alent circuits of the proposed converter under the followingassumptions:

Andrade et al.: High-Efficiency Boost-Flyback Converter with Voltage Multiplier Cells for High Voltage Gain Application 3

FIGURE 2. Key waveforms relevant to the proposed highstep-up converter.

FIGURE 3. Current flow path in three operating modes dur-ing one switching period in CCM operation. (a) Mode I.(b) Mode II. (c) Mode III.

1) The capacitors (C1, C2, C3, C4, C5 and Co) are largeenough. Thus, the voltages across them are consideredto be constant in one period of switching.;

2) The switches and diodes are ideal, i.e., loss-free;3) The coupled inductor model includes a magnetizing

(Lm), primary (N1), secondary (N2) and the leakage ofthe coupled inductor is neglected in this analysis, butits effect is shown in the theoretical and experimentalwaveforms;

4) The turns-ratio of the coupled inductor is N = N2/N1.

Mode 1 [t0 – t1]: As shown in Figure 3(a), the switch S isturned ON, the coupled inductor is magnetized. Capacitor C2

is charged up with C1 voltage. Diode D2 parasitic resistance(rD2) limits the charging current in this interval. Capacitors(C4 and C5) are charged up with NVi. Leakage inductance Lk

limits these capacitances charging current during this interval.The load Ro is supplied by capacitor Co alone. This intervalends when voltage across C2 equals voltage across C1.

Mode 2 [t1 – t2]: As shown in Figure 3(b), the mode beginswhen the capacitor (C2) is fully charged up, i. e., the capacitorvoltage is equal to the VC1.

Mode 3 [t1 – Ts]: As shown in Figure 3(c), the switch Sis turned OFF, the coupled inductor is demagnetized. Capac-itor C1 is charge up with Vi + VLm. Capacitor C3 is chargedup with C2 voltage. Diode D3 parasitic resistance (rD3) andthe inductance Lm of the coupled inductor limits the chargingcurrent in this interval. The load Ro and the capacitor Co aresupplied by the VC1 + VC3 + N(VC1-Vi) + VC4 + VC5.

4. STEADY-STATE ANALYSIS OF PROPOSEDCONVERTERS

A. Steady-State Analysis

By applying the volt–second balance principle on coupledinductor magnetizing inductance shown in the circuit dia-grams of Figure 3(a) through 3(c),

∫ T s0 vLm = 0, the static

voltage gain is obtained as

MCCM = Vo

Vi= 2 + 2N − ND

1 − D(1)

Figure 4(a) shows the static voltage gain versus the dutycycle, for an ideal lossless converter, under various turns ratioof the coupled inductor. On the other hand, if parasitic resis-tive components are taken into account, an Equivalent SeriesResistance (ESR) will appear in the DC equivalent convertermodel [41]. This DC ESR encompass all parasitic resistivecomponents, such as for winding resistance (rLpri and rLsec),diodes voltage drop (VD1, VD3 and VD6), diodes resistance(rD1 through rD6) and MOSFET RDS(ON). Since MOSFET

4 Electric Power Components and Systems, Vol. 0 (2018), No. 0

FIGURE 4. Voltage gain MCCM as a function of duty ratio Dby (a) various turns ratios. (b) various rL and N.

contribution to DC ESR is proportional to the duty cycle(D. RDS(ON)) usually it is by far, the large portion of thisparameter.

Considering the winding resistance of the couple inductor(rL) the static voltage gain of the proposed converter is givenby:

MCCM = Vo

Vi= 2 + 2N − ND

(1 − D)

× 1 − k(1−D)1+ND

1 + 11−D

1Ro

req + 1(1−D)2

1Ro

(1 + N )2D(RDs(on) + rLpri + rD2)

(2)

where k = (VD1 + VD3 + VD6)/Vi, req = rLpri + rL sec + rD1 +rD2 + rD3 + rD4 + rD5 + rD6.

Symbol Name Value

Pi Input Power 250 WVi Input Voltage 25 VVo Output Voltage 250 Vfs Switching

Frequency50 kHz

N Turns Ratio of theCoupled Inductor

2

Lm MagnetizingInductor

100 µH

C1, C2, C3 Capacitors 9 µFC4, C5 Capacitors 1.5 µFD1, D2, D3, D4, D5 Diode MBR20200CT

(Schottky)200 V/20 A

S Switch IRFP150N100 V/42 A

TABLE I. Experimental parameters and components of the pro-posed converter.

Figure 4(b) shows the static voltage gain versus the dutyratio under various values for the coupled inductor rL. As canbe seen, when the proposed converter is operated at a dutycycle higher than 0.8, the parasitic element presence begins toaffect the voltage gain of the converter. Therefore with the aimto avoid the parasitic elements effects, the converter shouldoperate with a duty cycle lower than 0.8.

FIGURE 5. Constructed Boost-Flyback Converter with Volt-age Cells Multiplier prototype.

Andrade et al.: High-Efficiency Boost-Flyback Converter with Voltage Multiplier Cells for High Voltage Gain Application 5

FIGURE 6. Experimental waveforms of the proposed converter. (a) Vo, VC1, VC4, Vi; (b) VC1, VC2, VC3; (c) VC4, VC5; (d) Vs, is; (e)VD1, iD1; (f) VD2, iD2; (g) VD3, iD3; (h) VD4, iD4; (i) VD6, iD6;

6 Electric Power Components and Systems, Vol. 0 (2018), No. 0

B. Voltage Stresses on Power Devices

The voltage stresses on the switch (S), and diodes (D1, D2 D3

and D6) are given by the following expressions.

Vs = VD1 = VD2 = VD3 = 1

1 − DVi (3)

The voltage stresses of the diodes (D4 and D5) are givenby,

VD4 = VD5 = VD6 = N

1 − DVi. (4)

As can be seen, the stresses on the semiconductors arelower compared to the high voltage gain of the converter.Therefore, as mentioned by [39], the low voltage stresses onsemiconductor devices permit to design converter prototypeswith low RDS(ON) MOSFET’s and Schottky diodes. It mayyield in higher overall converter efficiency.

C. Small Signal Model

The small signal model is important to the converter controllerdesigning. For low frequency range, the proposed converterbehaves as the standard boost converter. Their transfer func-tions are given by equation (5) and equation (6), respectively.It can be seen that the only difference is that the proposed con-verter has a constant factor (Ko) that multiplies the transferfunction.

Gb f (vo, d ) = KoVin

(D − 1)2

−Ls + (1 − D)2Ro

RoCLs2 + Ls + (1 − D)2Ro

(5)

where Ko is the gain of the converter, G(vo,d) is the transferfunction of output voltage in relation with the duty cycle forthe proposed converter.

Gb(vo, d ) = Vin

(D − 1)2

−Ls + (1 − D)2Ro

RoCLs2 + Ls + (1 − D)2Ro

(6)

Because the main objective was to analyze the power cir-cuit performance, the experiments were conducted with open-loop control, fixing the duty cycle and observing the circuit’sperformance. Furthermore, the control oriented modeling ofthe structures presented here is important and suitable for acomprehensive study in future researches.

5. EXPERIMENTAL RESULTS

In order to the evaluate the performance of the proposed con-verter, an experimental prototype is implemented in the lab-oratory. The experimental parameters and components of theproposed converter are given in Table I. A photograph of thelaboratory prototype is shown in Figure 5. The total size ofthe proposed converter prototype board is 14.5 cm × 13 cm.It should be noted that no size optimization was attempted.

FIGURE 7. Efficiency under different output power.

The main waveforms of the experimental Boost-Flybackwith voltage multiplier converter prototype mode are shownin Figure 6. Figure 6(a) shows the measured waveforms of theinput voltage (Vi = 25 V), the voltage across the capacitorsC1 and C4 (VC1 = VC4 = 50 V), which is twice the input volt-age value. Finally, the same Figure 6(a) shows the output volt-age (Vo = 250 V) of proposed converter, which is ten timesgreater than the input voltage. Concerning the switched capac-itors, Figure 6(b) shows the voltage across each capacitor, i.e.,C1, C2 and C3 (VC1 = VC2 = VC3 = 50 V), which is twicethe input voltage. Likewise, concerning the voltage cell mul-tiplier, Figure 6(c) shows the voltage across the capacitors C4

and C5 (VC4 = VC5 = 50 V), which is twice the input voltage.The voltage and current stresses on the semiconductors

are depicted in Figure 6(d)-(i). As can be seen, in Figure6(d)-(g), the voltage stress on the semiconductors (S, D1, D2,D3 and D4) is lower than the semiconductors (D5 and D6),Figure 6(h)-(i). On the other hand, the current stress on thesemiconductors (S, D1, D2, D3 and D4) is higher than thesemiconductors (D5 and D6), Figure 6(h)-(i).

Finally, Figure 7 shows the efficiency versus output powerfor the prototype converter and for the boost converter, usingthe Yokogawa WT1800. From Figure 7, it can be seen that theefficiency is above 94% all over the output power range, andthe maximum efficiency can be up to 97.4% at 50 W of outputpower. In the full load, Po = 250 W, the proposed converterachieve 95.8% of efficiency.

6. CONCLUSION

In this paper, a novel Boost-Flyback with voltage multi-plier cell and switched capacitors topology, with high volt-age gain, is proposed and analyzed in the steady-state. Thisconverter satisfies all main conditions that a high voltage

Andrade et al.: High-Efficiency Boost-Flyback Converter with Voltage Multiplier Cells for High Voltage Gain Application 7

step-up converter should have, such as high voltage gain,recycling of the coupled inductor leakage energy, low-voltagestresses on the semiconductors and high efficiency through theentire load range.

ACKNOWLEDGMENT

This paper was supported by the “Conselho Nacionalde Desenvolvimento Científico (CNPq)” and “Coorde-nação de Aperfeiçoamento de Pessoal de Nível Superior(PROEX/CAPES).”

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BIOGRAPHIES

António Manuel Santos Spencer Andrade was born inRibeira Grande, Cabo Verde, in 1989. He received the Bache-lor of Science degree in Automation and Control Engineeringfrom the UCS, in 2012. He received the M.S. degree in elec-trical engineering from UFSM, 2015. Now he is pursuing hisPhD degree in UFSM. Mr. Andrade is a Member of the Brazil-ian Power Electronics Society (SOBRAEP) and several IEEESocieties. His research interests are renewable energy, DC-DCconverters and microinverters.

Everson Mattos was born in Criciúma Brazil. He receivedthe B. Eng. and Specialization at Federal University of SantaCatarina. M.Sc. degree in Electrical Engineering from FederalUniversity of Santa Maria. He is a Doctorate Student in Elec-trical Engineering from UFSM. His current line of research isEPS for nano and picosatellites.

Mario Lúcio da Silva Martins received the B.S., M.S., andPh.D. degrees in electrical engineering from the UFSM, SantaMaria, Brazil, 1999, 2002, and 2008, respectively. In 2012,he joined the Department of Electronics and Computationof UFSM, Brazil. Dr. Martins is a Member of the Brazil-ian Power Electronics Society (SOBRAEP) and several IEEESocieties. His research interests include UPS and power con-verters for renewable energy.