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The revoluTion in power elecTronics – Gallium niTriDe (Gan) baseD power TransisTors in 100v anD 650v
Tomorrow‘s power Today®
The revolution in power electronics – Gallium Nitride based power transistors in 100V and 650V.
GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors has launched the first commercially available GaN based E-HEMTs (Enhancement Mode High Electron Mobility Transistor) in 100V and 650V featuring the ultra low inductance and highly thermal efficenct GaNPXTM packaging technology.
Based on GaN Systems’ proprietary Island Technology®, its devices significantly outperform comparable silicon based devices in terms of higher switching frequency and efficiency.
Benefits of Gallium Nitride based power transistors:
Applications to benefit are ranging from onboard battery charging, high-voltage DC-DC and AC-DC conversion, UPS, air-conditioning, appliances, heavy-duty battery-operated power tools and E-bikes.
GaN Systems’ comprehensive product range will enable the development of next-generation power conversion technology, leading to higher efficiency, smaller board layouts and fewer peripheral components.
GaNPXTM
compared to a TO-220AB
Using GaN E-HEMTs over silicon-based transistors will lead to better performance
on significantly smaller PCB layouts.
performaNce aNd specificaTioN
• Faster switching >10MHz• Lower Rds(on)
• >13 x better Qg*Rds(on) FOM• Easy gate drive +6V• Increased efficiency• Less board area per watt• Lighter overall system• Simplified cooling• Lower cost
Top side cooling for direct temperature flow from the GaN device to the heatsink and lowest thermal path
pcB layout advantages with top-side / bottom-side cooled parts
part No. 100V Type
650V Type
max. current
(a)
rds(oN) typ. at 25°c (mΩ)
QG typ. (nc)
Top side
cooled
Bottom side
cooled
Gs61004B • 45 15 6.2 •
Gs61008p • 90 7 12 •
Gs61008T • 90 7 12 •
Gs66502B • 7 200 1.5 •
Gs66504B • 15 100 3 •
Gs66506T • 22.5 67 4.6 •
Gs66508B • 30 50 5.8 •
Gs66508p • 30 50 5.8 •
Gs66508T • 30 50 5.8 •
Gs66516T • 60 25 12 •
LiNe-up GaN sysTems:
Bottom side cooling for direct heatsink mounting on the bottom of the pcb
our serVice
ecomaL europe GmbH wilhelm-schauenberg-str. 7 · d-79199 Kirchzarten · www.ecomal.com
for technical questions please contact:
GaN Systems manufactures a range of Gallium Nitride high power transistors for consumer, enterprise, industrial, solar / wind / smartgrid and transportation power conversion applications.
eVaLuaTioN Board aVaiLaBLe
The GS66508T-EVBHB is a half bridge evaluation board to allow the user to easily evaluate all features of the GaN based power transistor technology. The board is configurable in operation modes for common testing/evaluation of double pulse tester, buck or boost topologies. It includes all essential components for basic operation.
ECOMAL Europe as the official distribution partner for GaN Systems is committed to assisting the manufacturer in launching this revolutionary technology into the market of power electronics. We support you in following services:
• sampling: ECOMAL offers samples on all available GaN Systems E-HEMTs ex stock
• Logistic solutions and product availability: support production volumes with stock and customised logistic solutions
• Technical application support: we help you to incorporate GaN E-HEMTs into your design and pick the right peripheral discrete semiconductors and passive components.
Technical support center europe [email protected]
