IRF630B

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2002 Fairchild Semiconductor Corporation Rev. B, December 2002

IRF630B/IR

FS630B

IRF630B/IRFS630B200V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchilds proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters,

switch mode power supplies, DC-AC converters for

uninterrupted power supply and motor control.

Features

9.0A, 200V, RDS(on)= 0.4@VGS= 10 V

Low gate charge ( typical 22 nC)

Low Crss ( typical 22 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

Absolute Maximum Ratings TC= 25C unless otherwise noted

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol Parameter IRF630B IRFS630B Units

VDSS Drain-Source Voltage 200 VID Drain Current - Continuous (TC= 25C) 9.0 9.0 * A

- Continuous (TC= 100C) 5.7 5.7 * A

IDM Drain Current - Pulsed (Note 1) 36 36 * A

VGSS Gate-Source Voltage 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 160 mJ

IAR Avalanche Current (Note 1) 9.0 A

EAR Repetitive Avalanche Energy (Note 1) 7.2 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns

PD Power Dissipation (TC= 25C) 72 38 W

- Derate above 25C 0.57 0.3 W/C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 C

TL

Maximum lead temperature for soldering purposes,

1/8"from case for 5 seconds 300 C

Symbol Parameter IRF630B IRFS630B Units

RJC Thermal Resistance, Junction-to-Case Max. 1.74 3.33 C/W

RCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- C/W

RJA Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 C/W

TO-220IRF Series

G SD

S

D

G

TO-220FIRFS SeriesG SD

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Rev. B, December 2002

IRF630B/IR

FS630B

(Note 4)

(Note 4, 5)

(Note 4, 5)

(Note 4)

2002 Fairchild Semiconductor Corporation

Electrical Characteristics TC= 25C unless otherwise noted

Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 3mH, IAS= 9.0A, VDD= 50V, RG= 25 , Starting TJ= 25C3. ISD! 9.0A, di/dt ! 300A/s, VDD! BVDSS, Starting TJ= 25C

4. Pulse Test : Pulse width ! 300s, Duty cycle ! 2%5. Essentially independent of operating temperature

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS= 0 V, ID= 250 A 200 -- -- V

BVDSS

/ TJBreakdown Voltage TemperatureCoefficient ID= 250 A, Referenced to 25C -- 0.2 -- V/C

IDSSZero Gate Voltage Drain Current

VDS= 200 V, VGS= 0 V -- -- 10 A

VDS= 160 V, TC= 125C -- -- 100 A

IGSSF Gate-Body Leakage Current, Forward VGS= 30 V, VDS= 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS= -30 V, VDS= 0 V -- -- -100 nA

On CharacteristicsVGS(th) Gate Threshold Voltage VDS= VGS, ID= 250 A 2.0 -- 4.0 V

RDS(on) Static Drain-Source

On-ResistanceVGS= 10 V, ID= 4.5 A -- 0.34 0.4

gFS Forward Transconductance VDS= 40 V, ID= 4.5 A -- 7.05 -- S

Dynamic CharacteristicsCiss Input Capacitance VDS= 25 V, VGS= 0 V,

f = 1.0 MHz

-- 550 720 pF

Coss Output Capacitance -- 85 110 pF

Crss Reverse Transfer Capacitance -- 22 29 pF

Switching Characteristicstd(on) Turn-On Delay Time VDD= 100 V, ID= 9.0 A,

RG= 25

-- 11 30 ns

tr Turn-On Rise Time -- 70 150 ns

td(off) Turn-Off Delay Time -- 60 130 ns

tf Turn-Off Fall Time -- 65 140 ns

Qg Total Gate Charge VDS= 160 V, ID= 9.0 A,

VGS= 10 V

-- 22 29 nC

Qgs Gate-Source Charge -- 3.6 -- nC

Qgd Gate-Drain Charge -- 10.2 -- nC

Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- 9.0 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 36 A

VSD Drain-Source Diode Forward Voltage VGS= 0 V, IS= 9.0 A -- -- 1.5 V

trr Reverse Recovery Time VGS= 0 V, IS= 9.0 A,

dIF/ dt = 100 A/s

-- 140 -- ns

Qrr Reverse Recovery Charge -- 0.87 -- C

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Rev. B, December 20022002 Fairchild Semiconductor Corporation

IRF630B/IR

FS630B

0 5 10 15 20 250.0

0.5

1.0

1.5

2.0

2.5

VGS

= 20V

VGS

= 10V

!Note : TJ= 25"

RDS(ON)

[#

],

Drain-SourceOn-Resistance

ID, Drain Current [A]

2 4 6 8 1010

-1

100

101

150oC

25oC

-55oC !Notes :

1. VDS

= 40V 2. 250$ s Pulse Test

ID,DrainCurrent[A]

VGS

, Gate-Source Voltage [V]

0 4 8 12 16 20 240

2

4

6

8

10

12

VDS

= 100V

VDS

= 40V

VDS

= 160V

!Note : ID= 9.0 A

VGS,Gate-SourceVoltage[V]

QG, Total Gate Charge [nC]

10-1

100

101

0

500

1000

1500

Coss

Ciss

= Cgs+ C

gd(C

ds= shorted)

Coss

= Cds+ C

gd

Crss

= Cgd

!Notes : 1. V

GS= 0 V

2. f = 1 MHz

Crss

Ciss

Capacitance[pF]

VDS

, Drain-Source Voltage [V]

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.810

-1

100

101

150"

!Notes : 1. V

GS= 0V

2. 250$ s Pulse Test

25"

IDR,ReverseDrainCurrent[A]

VSD

, Source-Drain voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

10-1

100

101

10-1

100

101

VGS

Top : 15.0 V 10.0V 8.0V

7.0V 6.5V 6.0V 5.5VBottom: 5.0 V

!Notes : 1. 250$ s Pulse Test 2. T

C= 25"

ID,DrainCurrent[A]

VDS

, Drain-Source Voltage [V]

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IRF630B/IR

FS630B

100

101

102

10-2

10-1

100

101

102

100 s

1 ms

DC

100 ms

10 ms

Operation in This Areais Limited by R

DS(on)

!Notes :

1. TC= 25

oC

2. TJ= 150

oC

3. Single Pulse

ID,DrainCurrent[A]

VDS, Drain-Source Voltage [V]

25 50 75 100 125 1500

2

4

6

8

10

ID,

DrainCurrent[A]

TC, Case Temperature ["]

100

101

102

10-1

100

101

102

DC

10 ms

1 ms

100 s

Operation inThis Areais Limited by R

DS(on)

!Notes :

1. TC= 25

oC

2. TJ= 150

oC

3. Single Pulse

ID,DrainCurrent[A]

VDS, Drain-Source Voltage [V]

-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

3.0

!Notes : 1. V

GS= 10 V

2. ID= 4.5 A

RDS(ON),(Normalized)

Drain-SourceOn-Resistance

TJ, Junction Temperature [

oC]

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

!Notes : 1. V

GS=0V

2. ID=250$A

BVDSS,(Normalized)

Drain-SourceBreakdownVoltage

TJ, Junction Temperature [

oC]

Typical Characteristics (Continued)

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

Figure 9-1. Maximum Safe Operating Area

for IRF630B

Figure 10. Maximum Drain Current

vs Case Temperature

Figure 9-2. Maximum Safe Operating Area

for IRFS630B

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IRF630B/IR

FS630B

Typical Characteristics (Continued)

10-5

1 0-4

10-3

1 0-2

10-1

100

1 01

1 0-2

1 0-1

1 00

! No tes : 1. Z

% JC( t ) = 1.74 " / W M a x .

2. Duty Factor , D=t1/t

2

3. TJM

- TC= P

DM* Z

% JC(t)

s ing le pu l se

D = 0 . 5

0 . 0 2

0 .2

0 . 0 5

0 .1

0 . 0 1

Z%

JC(

t),Therm

alResponse

t1, S q u a r e W a v e P u l s e D u r a ti o n [ s e c ]

Figure 11-1. Transient Thermal Response Curve for IRF630B

t1

PDM

t2

10-5

1 0-4

10-3

1 0-2

10-1

100

1 01

1 0-2

1 0-1

1 00

! No tes : 1. Z

% JC( t ) = 3.33 " / W M a x .

2. Duty Factor , D=t1/t

2

3. TJM

- TC= P

DM* Z

% JC(t)

s i n g l e p u l s e

D = 0 . 5

0 . 0 2

0 .2

0 . 0 5

0 .1

0 . 0 1

Z%

JC(

t),Therm

alResponse

t1, S q u a r e W a v e P u l s e D u r a t io n [ s e c ]

Figure 11-2. Transient Thermal Response Curve for IRFS630B

t1

PDM

t2

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IRF630B/IR

FS630B

Charge

VGS

10V

Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K&

200nF12V

Same Type

as DUT

Charge

VGS

10V

Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K&

200nF12V

Same Type

as DUT

VGS

VDS

10%

90%

td(on)

tr

t on t off

td(off) t

f

VDD

10V

VDSRL

DUT

RG

VGS

VGS

VDS

10%

90%

td(on)

tr

t on t off

td(off) t

f

VDD

10V

VDSRL

DUT

RG

VGS

EAS = L IAS2----

2

1--------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

tp

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

L

I D

tp

EAS = L IAS2----

2

1EAS = L IAS

2----2

1----2

1--------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

tp

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

LL

I DI D

tp

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

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IRF630B/IR

FS630B

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

Driver

RG

Same Typeas DUT

VGS dv/dt controlled by RG ISD controlled by pulse period

VDD

L

I SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width

Gate Pulse Period--------------------------

DUT

VDS

+

_

Driver

RG

Same Typeas DUT

VGS dv/dt controlled by RG ISD controlled by pulse period

VDD

LL

I SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width

Gate Pulse Period--------------------------D =Gate Pulse Width

Gate Pulse Period--------------------------

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IRF630B/IR

FS630B

Package Dimensions

4.50 0.209.90 0.20

1.52 0.10

0.80 0.102.40 0.20

10.00 0.20

1.27 0.10

3.60 0.10

(8.70)

2.8

00.1

0

15.9

00.2

0

10.0

8

0.3

0

18.9

5MAX.

(1.7

0)

(3.7

0)

(3.0

0)

(1.4

6)

(1.0

0)

(45)

9.2

00.2

0

13.0

80.2

0

1.3

00.1

0

1.30+0.100.05

0.50+0.100.05

2.54TYP

[2.54 0.20]

2.54TYP

[2.54 0.20]

TO-220

Dimensions in Millimeters

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IRF630B/IR

FS630B

Package Dimensions (Continued)

Dimensions in Millimeters

(7.00) (0.70)

MAX1.47

(30)

#1

3.

30

0.

10

15.

80

0.

20

15.

87

0.

20

6.

68

0.

20

9.

75

0.

30

4.

70

0.

20

10.16 0.20

(1.00x45)

2.54 0.20

0.80 0.10

9.40 0.20

2.76 0.200.35 0.10

3.18 0.10

2.54TYP

[2.54 0.20]

2.54TYP

[2.54 0.20]

0.50+0.100.05

TO-220F

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2002 Fairchild Semiconductor Corporation

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I1

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intended to be an exhaustive list of all such trademarks.

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IRF630B