IRGP6690D EPBF Product Datasheet - Semiconductor & … · 1 © 2014 International Rectifier Submit Datasheet Feedback ... Turn-Off delay time — 227 ... IRGP6690DPbF/IRGP6690D-EPbF

1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014

IRGP6690DPbF IRGP6690D-EPbF

Base part number Package Type Standard Pack Orderable Part Number Form Quantity

IRGP6690DPBF TO-247AC Tube 25 IRGP6690DPBF IRGP6690D-EPBF TO-247AD Tube 25 IRGP6690D-EPBF

Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 140 IC @ TC = 100°C Continuous Collector Current 90 ICM Pulse Collector Current, VGE = 15V 225 ILM Clamped Inductive Load Current, VGE = 20V 300 IFRM @ TC = 100°C Diode Repetitive Peak Forward Current 45 IFM Diode Maximum Forward Current 300 VGE Continuous Gate-to-Emitter Voltage ±20 V PD @ TC = 25°C Maximum Power Dissipation 483 W PD @ TC = 100°C Maximum Power Dissipation 241 TJ Operating Junction and -40 to +175 C TSTG Storage Temperature Range Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

A

Thermal Resistance Parameter Min. Typ. Max. Units RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.31

°C/W RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––

RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40

RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 2.10

VCES = 600V

IC = 90A, TC =100°C

tSC ≥ 5µs, TJ(max) = 175°C

VCE(ON) typ. = 1.65V @ IC = 75A

Applications • Welding • H Bridge Converters

Features Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications

Optimized diode for full bridge hard switch converters Optimized for welding and H bridge converters

Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and higher power capability

5µs short circuit SOA Enables short circuit protection scheme

Positive VCE (ON) temperature coefficient Excellent current sharing in parallel operation

Lead-free, RoHS compliant Environmentally friendly

G C E Gate Collector Emitter

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

E

G

n-channel

C

E

G C

C

E G C

C

IRGP6690D-EPbF TO-247AD

IRGP6690DPbF TO-247AC

http://www.irf.com/�

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IRGP6690DPbF/IRGP6690D-EPbF


Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 100µA ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — 0.55 — V/°C VGE = 0V, IC = 3mA (25°C-175°C)

VCE(on) Collector-to-Emitter Saturation Voltage — 1.65 1.95 IC = 75A, VGE = 15V, TJ = 25°C

— 2.10 — IC = 75A, VGE = 15V, TJ = 175°C VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 2.1mA

ΔVGE(th)/ΔTJ Threshold Voltage Temperature Coeff. — -19 — mV/°C VCE = VGE, IC = 2.1mA (25°C-175°C) gfe Forward Transconductance — 50 — S VCE = 50V, IC = 75A, PW = 20µs

ICES Collector-to-Emitter Leakage Current — 1.5 100 µA VGE = 0V, VCE = 600V — 1.4 — VGE = 0V, VCE = 600V, TJ = 175°C

IGES Gate-to-Emitter Leakage Current — — ±200 nA VGE = ±20V

VFM — 2.3 3.3 V IF = 18A — 1.5 — IF = 18A, TJ = 175°C

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max Units Conditions

Qg Total Gate Charge — 140 — nC

IC = 75A Qge Gate-to-Emitter Charge — 40 — VGE = 15V Qgc Gate-to-Collector Charge — 60 — VCC = 400V Eon Turn-On Switching Loss — 2.4 —

mJ IC = 75A, VCC = 400V, VGE=15V

RG = 10Ω, L = 400µH, TJ = 25°C

Energy losses include tail & diode reverse recovery

Eoff Turn-Off Switching Loss — 2.2 — Etotal Total Switching Loss — 4.6 — td(on) Turn-On delay time — 85 —

ns tr Rise time — 86 — td(off) Turn-Off delay time — 222 — tf Fall time — 53 — Eon Turn-On Switching Loss — 3.1 —

mJ IC = 75A, VCC = 400V, VGE=15V

RG = 10Ω, L = 400µH, TJ = 175°C

Energy losses include tail & diode reverse recovery

Eoff Turn-Off Switching Loss — 2.8 —

Etotal Total Switching Loss — 5.9 —

td(on) Turn-On delay time — 67 —

ns tr Rise time — 92 —

td(off) Turn-Off delay time — 227 —

tf Fall time — 78 — Cies Input Capacitance — 4720 — VGE = 0V Coes Output Capacitance — 270 — pF VCC = 30V Cres Reverse Transfer Capacitance — 140 — f = 1.0MHz

RBSOA Reverse Bias Safe Operating Area TJ = 175°C, IC = 300A

FULL SQUARE VCC = 480V, Vp ≤ 600V VGE = +20V to 0V

SCSOA Short Circuit Safe Operating Area 5 — — µs TJ = 150°C,VCC = 400V, Vp ≤ 600V VGE = +15V to 0V

Erec Reverse Recovery Energy of the Diode — 210 — µJ TJ = 175°C

trr Diode Reverse Recovery Time — 90 — ns VCC = 400V, IF = 18A

Irr Peak Reverse Recovery Current — 26 — A VGE = 15V, Rg = 10Ω

Diode Forward Voltage Drop

— 2.05 — IC = 75A, VGE = 15V, TJ = 150°C V

mA

Notes: VCC = 80% (VCES), VGE = 20V, L = 400µH, RG = 10Ω.

Rθ is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. fsw =40KHz, refer to figure 26.





25 50 75 100 125 150 175

TC (°C)

0

20

40

60

80

100

120

140

I C (A

)

1 10 100

VCE (V)

0.1

1

10

100

I C (

A)

10µsec

100µsec

Tc = 25°CTj = 175°CSingle Pulse

DC

1msec

Fig. 2 - Maximum DC Collector Current vs. Case Temperature

10 100 1000

VCE (V)

1

10

100

1000

I C (

A)

Fig. 5 - Reverse Bias SOA TJ = 175°C; VGE = 20V

Fig. 4 - Forward SOA TC = 25°C; TJ ≤ 175°C; VGE = 15V

25 50 75 100 125 150 175

TC (°C)

0

100

200

300

400

500

Pto

t (W

)

0.1 1 10 100

f , Frequency ( kHz )

20

40

60

80

100

120

140

Load

Cur

rent

( A

)

For both:Duty cycle : 50%Tj = 175°CTcase = 100°CGate drive as specifiedPower Dissipation = 241W

Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental)

Fig. 3 - Power Dissipation vs. Case Temperature

I

Square Wave:VCC

Diode as specified





0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0

VF (V)

0

50

100

150

200

250

300

I F (

A)

175°C25°C

-40°C

5 10 15 20

VGE (V)

0

1

2

3

4

5

6

7

VC

E (V

)

ICE = 37A

ICE = 75A

ICE = 150A

Fig. 9 - Typ. Diode Forward Voltage Drop Characteristics

0 2 4 6 8 10

VCE (V)

0

50

100

150

200

250

300

I CE

(A)

VGE = 18VVGE = 15VVGE = 12VVGE = 10VVGE = 8.0V

5 10 15 20

VGE (V)

0

1

2

3

4

5

6

7

VC

E (V

)

ICE = 37A

ICE = 75A

ICE = 150A

Fig. 8 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 20µs

Fig. 10 - Typical VCE vs. VGE TJ = -40°C

Fig. 11 - Typical VCE vs. VGE TJ = 25°C

0 2 4 6 8 10

VCE (V)

0

50

100

150

200

250

300

I CE

(A)


Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs

0 2 4 6 8 10

VCE (V)

0

50

100

150

200

250

300I C

E (A

)


Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs





2 4 6 8 10 12 14 16

VGE (V)

0

50

100

150

200

250

300

I CE

(A)

TJ = 25°C

TJ = 175°C

0 20 40 60 80 100 120 140 160

IC (A)

10

100

1000

Sw

ichi

ng T

ime

(ns)

tR

tdOFF

tF

tdON

Fig. 13 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs

0 10 20 30 40 50

RG (Ω)

100

1000

10000

Sw

ichi

ng T

ime

(ns)

tR

tdOFF

tFtdON

Fig. 15 - Typ. Switching Time vs. IC

TJ = 175°C; L = 400µH; VCE = 400V, RG = 10Ω; VGE = 15V

Fig. 16 - Typ. Energy Loss vs. RG TJ = 175°C; L = 400µH; VCE = 400V, ICE = 75A; VGE = 15V

0 20 40 60 80 100

Rg (Ω)

0

2

4

6

8

10

12

Ene

rgy

(mJ)

EOFF

EON

0 20 40 60 80 100 120 140 160

IC (A)

0

2

4

6

8

10

12

14

Ene

rgy

(mJ)

EOFF

EON

Fig. 14 - Typ. Energy Loss vs. IC

TJ = 175°C; L = 400µH; VCE = 400V, RG = 10Ω; VGE = 15V

Fig. 17 - Typ. Switching Time vs. RG TJ = 175°C; L = 400µH; VCE = 400V, ICE = 75A; VGE = 15V

5 10 15 20

VGE (V)

0

1

2

3

4

5

6

7V

CE

(V)

ICE = 37A

ICE = 75A

ICE = 150A

Fig. 12 - Typical VCE vs. VGE

TJ = 175°C





0 200 400 600 800 1000 1200

diF /dt (A/µs)

600

800

1000

1200

1400

1600

1800

QR

R (

nC)

10Ω22Ω

100Ω

47Ω

9.0A

18A

36A

9 10 11 12 13 14 15 16

VGE (V)

5

10

15

20

25

30

Tim

e (µ

s)

100

200

300

400

500

600

Cu

rrent (A

)

Tsc

Isc

Fig. 21 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C

5 10 15 20 25 30 35 40

IF (A)

0

50

100

150

200

250

300

Ene

rgy

(µJ)

RG = 100Ω

RG = 47Ω

RG = 22Ω

RG = 10Ω

Fig. 22 - Typ. Diode ERR vs. IF TJ = 175°C

0 200 400 600 800 1000

diF /dt (A/µs)

5

10

15

20

25

30

I RR

(A

)

Fig. 20 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 18A; TJ = 175°C

Fig. 23 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C

5 10 15 20 25 30 35 40

IF (A)

5

10

15

20

25

30I R

R (

A)

RG = 47Ω

RG = 10Ω

RG = 22Ω

RG = 100Ω

Fig. 18 - Typ. Diode IRR vs. IF TJ = 175°C

0 20 40 60 80 100

RG (Ω)

5

10

15

20

25

30

I RR

(A

)

Fig. 19 - Typ. Diode IRR vs. RG TJ = 175°C





0 100 200 300 400 500

VCE (V)

10

100

1000

10000

Cap

aci

tanc

e (p

F)

Cies

Coes

Cres

100 125 150 175

Case Temperature (°C)

0

20

40

60

80

100

120

Rep

etiti

ve P

eak

Cur

rent

(A)

D=0.3

D=0.2

D=0.1

Fig. 24 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz

0 20 40 60 80 100 120 140

Q G, Total Gate Charge (nC)

0

2

4

6

8

10

12

14

16

VG

E, G

ate-

to-E

mitt

er V

olta

ge (

V)

VCES = 400V

VCES = 300V

Fig. 25 - Typical Gate Charge vs. VGE ICE = 75A

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

1

Ther

mal

Res

pons

e ( Z

thJC

)

0.20

0.10

D = 0.50

0.020.01

0.05

SINGLE PULSE( THERMAL RESPONSE )

Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc

Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

Fig. 26 - Typical Gate Charge vs. VGE

Ri (°C/W) τi (sec)

0.0059807 0.00001295

0.0714021 0.00014130

0.1411822 0.00407600

0.0913779 0.02072000

τJ

τJ

τ1

τ1τ2

τ2 τ3

τ3

R1

R1R2

R2R3

R3

Ci= τi/RiCi= τi/Ri

τC

τC

τ4

τ4

R4

R4





Fig. 28 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

10

Ther

mal

Res

pons

e ( Z

thJC

)

0.20

0.10

D = 0.50

0.020.01

0.05

SINGLE PULSE( THERMAL RESPONSE )

Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W) τi (sec)

0.156286 0.000117

0.556864 0.000252

0.866402 0.003387

0.521965 0.030298

τJ

τJ

τ1

τ1τ2

τ2 τ3

τ3

R1

R1R2

R2R3

R3

Ci= τi/RiCi= τi/Ri

τC

τC

τ4

τ4

R4

R4





Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit

Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit

0

1K

VCCDUT

L

L

Rg

80 V

DUT VCC

+-

DC

4X

DUT

VCC

RSH

L

Rg

VCCDUT /DRIVER

diode clamp /DUT

-5V

Rg

VCCDUT

R = VCC

ICM

G force

C sense

100K

DUT0.0075µF

D1 22K

E force

C force

E sense





Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4

Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4

Fig. WF4 - Typ. S.C. Waveform

@ TJ = 150°C using Fig. CT.3

Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4

-20

0

20

40

60

80

100

120

-100

0

100

200

300

400

500

600

-0.6 -0.5 -0.4 -0.3 -0.2

ICE(A)

VCE(V)

time(µs)

90% ICE

10% VCE10% ICE

Eoff Loss

tf

-20

0

20

40

60

80

100

120

-100

0

100

200

300

400

500

600

-0.6 -0.5 -0.4 -0.3 -0.2

I CE

(A)

VC

E(V

)

time (µs)

TEST CURRENT

90% ICE

10% VCE

10%ICE

tr

Eon Loss

-30

-25

-20

-15

-10

-5

0

5

10

15

20

-0.2 -0.1 0.0 0.1

I F(A

)

time (µs)

PeakIRR

tRR

QRR

-100

0

100

200

300

400

500

600

-100

0

100

200

300

400

500

600

-5.0 0.0 5.0 10.0 15.0

Ice

(A)

Vce

(V)

time (µs)

VCE

ICE





TO-247AC Package Outline Dimensions are shown in millimeters (inches)

YEAR 1 = 2001

DATE CODE

PART NUMBERINTERNATIONAL

LOGORECTIFIER

ASSEMBLY

56 57

IRFPE30

135H

LINE Hindicates "Lead-Free" WEEK 35LOT CODE

IN THE ASSEMBLY LINE "H"

ASSEMBLED ON WW 35, 2001

Note: "P" in assembly line position

EXAMPLE:WITH ASSEMBLY THIS IS AN IRFPE30

LOT CODE 5657

TO-247AC Part Marking Information

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

TO-247AC package is not recommended for Surface Mount Application.



http://www.irf.com/package/�



TO-247AD Package Outline Dimensions are shown in millimeters (inches)

TO-247AD Part Marking Information

A S S E M B L Y Y E A R 0 = 2 0 0 0

A S S E M B L E D O N W W 3 5 , 2 0 0 0

IN T H E A S S E M B L Y L IN E "H "

E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E

L O T C O D E 5 6 5 7W IT H A S S E M B L Y P A R T N U M B E R

D A T E C O D E

IN T E R N A T IO N A LR E C T IF IE R

L O G O 0 3 5 H

5 6 5 7

W E E K 3 5

L IN E H

L O T C O D EN o te : "P " in a s s e m b ly l in e p o s it io n

in d ic a te s "L e a d - F re e "

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

TO-247AD package is not recommended for Surface Mount Application.





IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/

Qualification Information†

Qualification Level Industrial

(per JEDEC JESD47F) ††

Moisture Sensitivity Level TO-247AC N/A

RoHS Compliant Yes

TO-247AD N/A

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/

†† Applicable version of JEDEC standard at the time of product release.

Revision History Date Comments

• Added IFM Diode Maximum Forward Current = 300A with the note on page 1.

• Removed note from switching losses test condition on page 2. 11/14/2014



http://www.irf.com/product-info/reliability/�

Documents

IRGP6690D EPBF Product Datasheet - Semiconductor & … · 1 © 2014 International Rectifier Submit Datasheet Feedback ... Turn-Off delay time — 227 ... IRGP6690DPbF/IRGP6690D-EPbF