Journal of

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Journal of Semiconductor Devices and Circuits

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Engineering Universiti Teknologi, Malaysia.

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Aminul IslamAssistant Professor, Department of

Electronics and Communication Engineering Birla Institute of Technology

Mesra, Ranchi, Jharkhand, India.

Anil Kumar GuptaDepartment of Electronics and Communication Engineering,

National Institute of Technology Kurukshetra, India.

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Maheswari MuraliDepartment of Electronics and

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Trichy, India.

Mohankumar NagarajanProfessor & Head, Department of PG Studies ECE IEEE EDS Madras Chair Engineering College Tiruvannamalai Tamil Nadu India.

Rupendra Kumar SharmaMicroelectronics Department, Faculty of Electrical Engineering, Czech Technical University in Prague, Czech Republic.

Servin RathiSchool of Electronics and Electrical

Engineering,Sungkyunkwan University, Republic Of Korea.

I take the privilege to present the print version for the Volume 1 Issue (1) of Journal of Semiconductor

Devices and Circuits. The intension of JoSDC is to create an atmosphere that stimulates

creativeness, research and growth in the area of semiconductor devices, circuits and allied

applications.

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I hope you will enjoy reading this issue and we welcome your feedback on any aspect of the Journal.

Dr. Archana Mehrotra

Director

STM Journals

Director's Desk

STM JOURNALS

1. A New Robust and High-Performance Sub-threshold XOR/XNOR Circuit Manish Kumar Pandey, Shashank Kumar Ranu, Aminul Islam 1

ContentsJournal of Semiconductor Devices and Circuits

JoSDC (2014)© STM Journals 2014. All Rights Reserved

Journal of Semiconductor Devices and Circuits

Volume 1, Issue 1

www.stmjournals.com

A New Robust and High-Performance Sub-threshold

XOR/XNOR Circuit

Manish Kumar Pandey*, Shashank Kumar Ranu, Aminul Islam Birla Institute of Technology, Mesra, Ranchi, Jharkhand, India

Abstract This paper proposes an efficient 5-Transistor XOR/XNOR circuit. The proposed circuit

exhibits higher performance, lower power dissipation and power-delay product (PDP).

The proposed design is compared with existing XOR/XNOR circuits for sub-threshold operation. It offers 1.31 × improvement in delay and 1.28 × improvement in PDP

compared to its counterpart. It proves its robustness by offering 2.27 × improvement in

delay variability, 1.32 × improvement in power dissipation variability and 1.27 × improvement in PDP variability.

Keywords: Variability, propagation delay, power-delay product (PDP)