Key New Power Discrete Releases - pns.co.krpns.co.kr/admin/presentation/data/f_20120508114210.pdf · Key New Power Discrete Releases ... rectifiers and are silicon nitride passivated

www.fairchildsemi.comCompany Confidential 13

Key New Power Discrete Releases

Ignition IGBT

The FGB3236_F085 and FGI3236_F085 offer outstanding SCIS capability and low saturation voltage in industry standard D2-Pak (TO-

263) and I2-Pak (TO-262) plastic packages. These devices are intended for the use in automotive ignition circuits, specifically as a coil

drivers. Internal diodes provide voltage clamping without the need for external components.

Engine Control

Ignition

Fuel Injection

Glow Plug

BLDC Motor Control

EPS

Cooling

Pumps

Body Load Control

HID

PTC-Heater

HEV

Full Hybrid

Mild Hybrid

Micro Hybrid (Start/Stop)

Transmission Control

Engine Control

Ignition

Fuel Injection

Glow Plug

BLDC Motor Control

EPS

Cooling

Pumps

Body Load Control

HID

PTC-Heater

HEV

Full Hybrid

Mild Hybrid



Discrete Power

• Low Voltage MOSFET’s

• Mid Voltage MOSFET’s

• High Voltage MOSFETs

• Field Stop IGBTs

• Rectifiers

Ignition

• Ignition IGBT

• Next gen Ignition IGBT

• Smart Ignition IGBT

MOSFET

Rectifier

• The FFD08S60S_F085 is a stealth rectifier with soft recovery characteristics (trr<30ns). They have half the recovery time of hyperfast

rectifiers and are silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling or

boost diode in switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery

minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.

Recent New Product Releases

Product Applications Gate Drive N-ch/ P-ch FeatureFDG6301N_F085 Radio Low Logic Level Nch 5.0mOhms/ 25V, PowerTrench MOSFET in SC70 Package

FDC642P_F085 Load switch, battery protection Low Logic Level Pch 65.0mOhms/ -20V, PowerTrench MOSFET in SSOT6 Package

FDG6332C_F085 Load switch Low Logic Level Comp Pair 400mOhms 20V LLL , 630mOhms -20V LLL, in SC70-6

FDS4141_F085 Load switch Logic Level Pch 19mOhms /-40V LL, in SO8

FQB34P10TM_F085 Instrumentation, motor control Std Gate Pch 60.0mOhms/ 100V, Planar Stripe MOSFET in TO263 Package

FQB22P10TM_F085 Rear camera, motor control Std Gate Pch 125mOhms/ 100V Planar Stripe MOSFET in TO263 Package

FQB7P20TM_F085 Engine control/ fuel injection Std Gate Pch 690mOhms/-200V Planar Stripe MOSFET in TO263 Package

Note: blue denotes new product focus


Ignition Evolution

Distributor

Coil

1975 1980 1990 2000 2004 Future

Ignition Module

Engine Control Module (ECM)

MORE PRECISE ENGINE CONTROL, MORE POWER MANAGEMENT REQUIRED

Coil-On-PlugCoil + Switch On Plug

Distributorless Coil

Coil + Smart Switch On Plug

+ +

1st

Electronic Ignition

Eliminate the distributor

Eliminate high voltage wires & separate ignition module

Moves functionality from the ECM to the coil reducing the size of the ECM & enabling precise control of each cylinder

Saves ECM board space by moving switch from ECM to coil

1st

Electronic Engine Control Module

# IGBT =

# Cylinders / 2

# IGBTs =

1 / Cylinder

# IGBTs =

1 / Cylinder

# IGBTs =

1 / Cylinder

1 IGBT1 IGBT

Fairchild is the #1 WW Supplier of Ignition IGBTs

400M+ Units Shipped

http://www.petroworks.com/images/ecm.jpg






Fairchild Ignition Market Leader

HISTORY

• Fairchild ignition market presence goes back to the initial use (1973) of HV bipolar devices followed by HV Darlington devices.

• First ignition IGBT was released to production in 1993

• EcosparkTM ignition technology released to production in 2001

• Planar IGBT technology optimized for SCIS capability for ignition applications

• Strong IGBT patent portfolio

• Qualified in both Mountaintop Pa. and Bucheon Korea

• Industry leadership product, (smallest die per energy handling available on the market)

• Over 400M Ignition IGBTs shipped to-date

• World wide product sales, NA, Europe, Asia

• Selling to most major ignition suppliers worldwide.


Package Voltage Current rDS(on) Comments

SC-70 12V-100V 0.14A-.26A 0.1-0.6W

SOT-23 20V-100V 0.12A-0.9A 0.22-10W

SSOT-3 12V-60V 0.115A-3A 0.035-5W

SSOT-6 12V-200V 0.12A-6.3A 0.024-13W

SOT-223 20V-450V 0.4A-7.5A 0.03-4.25W

SO-8 20V-500V 0.37A-21A 0.0039-1W

5x6PQFN 20V-30V 2.2A-7.8A 0.030-0.220W

TO-251/2 12V-1,000V 1A-160A 0.0039-1W

TO-220/263 20V-900V 1.5A-160A 0.0018-10W

Automotive Power MOSFET Package Summary


IGBT

PT

NPT – Planar Fieldstop (commercially available; not yet Q101 qual’d)

NPT – Trench Fieldstop (commercially available; not yet Q101)

Advanced Options: temperature sense, current sense, ESD, high junction temperature, etc.

DIODES

Hyperfast

Ultrafast

Stealth

MOSFETS

30V – 75V

100V – 350V

600V – 1000V

SuperFET 600V (commercially available; not yet Q101 qualified)

Fairchild Power Discrete Portfolio

for Hybrid Electric Vehicles

Available

In

development


PowerTrench @Advancements


Shielded Gate Technology Benefits


Conventional vs. PT5


Advanced Systems

_Automotive Power Module


Advanced Systems



Advanced Systems



Advanced Systems

_Custom Automotive Power Module


Functional Driver - Product Focus

Smart HS Switches

MOSFET and IGBT

Gate Drivers

Motor Controls


Key NPD ―Planned‖ Introductions

Engine Control

Ignition

Fuel Injection

Glow Plug

BLDC Motor Control

EPS

Cooling

Pumps

Body Load Control

HID

PTC-Heater

HEV

Full Hybrid

Mild Hybrid



Engine Control

Ignition

Fuel Injection

Glow Plug

BLDC Motor Control

EPS

Cooling

Pumps

Body Load Control

HID

PTC-Heater

HEV

Full Hybrid

Mild Hybrid



Power Modules

• EPS/EHPS Modules

•Auxiliary VSD’s

Discrete Power

• Low Voltage MOSFET’s

• Mid Voltage MOSFET’s

• High Voltage MOSFETs

• Field Stop IGBTs

• Rectifiers

Ignition

• Ignition IGBT

• Smart Ignition IGBT

Functional Drivers

• Smart Switches

• Gate Drivers

• Motor Controls

Note: blue denotes new product focus

Ignition IGBT

• EcoSpark II: Targeted to provide a die shrink compared to ISL9V5036 while providing the same Vsat performance as EcoSPARK

I.

Next generation ignition system – value is increased power density and functionality that few competitors can provide

• DPAK as well as Power56 packages are targeted for ignition products in order to support the need for reduced board-space

• Smart Ignition IGBT (IGBT + IC + optional passives)Power Trench MOSFET

• 40V Std Gate with Current Sense in planning (using current PT4 process)

• 40V Std Gate with Low Gate Charge devices in planning targeted to reduce by up to ~25% gate charge compared to current PT4

processHybrid Electric Vehicle

• Recently kicked off a development project to automotive qualify first devices in SuperFET, FieldStop IGBT and Stealth Rectifiers

600V technologies intended for HEV applications.

Documents

Key New Power Discrete Releases - pns.co.krpns.co.kr/admin/presentation/data/f_20120508114210.pdf · Key New Power Discrete Releases ... rectifiers and are silicon nitride passivated