Lecture2 IC Basics 2up

8/3/2019 Lecture2 IC Basics 2up

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EECS141 1Lecture #2

EE141EE141--Fall 2010Fall 2010

Digital IntegratedDigital IntegratedCircuitsCircuits

Lecture 2Lecture 2

Integrated Circuit Basics:Integrated Circuit Basics:

Manufacturing and CostManufacturing and Cost

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EECS141 2Lecture #2

Administrative StuffAdministrative Stuff

Discussions start this Friday

Labs start next week

Homework #1 is due this Thursday

Everyone should have an EECSinstructional account

Use cory, quasar, pulsar


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EECS141 3Lecture #2

HSPICE SyntaxHSPICE SyntaxSimple CMOS inverter

.include '/home/ff/ee141/MODELS/gpdk090_mos.sp TT_s1v

* netlistVdd vdd 0 1.2

VIN in 0 PULSE 0 1.2 200ps 100ps 100ps 2ns 4nsM0 out in vdd vdd gpdk090_pmos1V L=100e-9 W=120e-9M1 out in gnd gnd gpdk090_nmos1V L=100e-9 W=120e-9R1 in gnd 10KR2 out vdd 100K

* extra control information.options post=2 nomod

* analysis.op.TRAN .01ns 3ns

.DC VIN 0 1.2 .001

.END

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EECS141 4Lecture #2

Last LectureLast Lecture

Last lecture

Introduction, Moores law, future of ICs

Todays lecture

Introduce basics of integrated circuitmanufacturing and cost

Reading: Ch 2.1, 2.2


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EECS141 5Lecture #2

CMOSCMOS

ManufacturingManufacturing

ProcessProcess

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EECS141 6Lecture #2

The MOS TransistorThe MOS TransistorPolysilicon

Aluminum


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EECS141 7Lecture #2

The Manufacturing ProcessThe Manufacturing Process

http://bwrc.eecs.berkeley.edu/IcBook

For a complete walk-through of the process (64 steps), check the

Book web-page

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EECS141 8Lecture #2

oxidation

opticalmask

processstep

photoresist coatingphotoresistremoval (ashing)

spin, rinse, dryacid etch

photoresist

stepper exposure

development

Typical operations in a single

photolithographic cycle (from [Fullman]).

PhotoPhoto--Lithographic ProcessLithographic Process


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EECS141 9Lecture #2

Patterning of SiOPatterning of SiO22

Si-substrate

Si-substrate Si-substrate

(a) Silicon base material

(b) After oxidation and depositionof negative photoresist

(c) Stepper exposure

Photoresist

SiO2

UV-light

Patternedoptical mask

Exposed resist

SiO2

Si-substrate

Si-substrate

Si-substrate

SiO2

SiO2

(d) After development and etching of resist,chemical or plasma etch of SiO

2

(e) After etching

(f) Final result after removal of resist

Hardened resist

Hardened resist

Chemical or plasma

etch

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EECS141 10Lecture #2

Advanced MetallizationAdvanced Metallization


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A Modern CMOS ProcessA Modern CMOS Process

p-well n-well

p+

p-epi

SiO2

AlCu

poly

n+

SiO2

p+

gate-oxide

Tungsten

TiSi2

DualDual--Well ShallowWell Shallow--TrenchTrench--Isolated CMOS ProcessIsolated CMOS Process

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Transistor LayoutTransistor Layout

p-well SiO2

poly

SiO2

n+

Cross-Sectional View

Layout View

poly

p-well


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CostCost

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Cost of Integrated CircuitsCost of Integrated Circuits

NRE (non-recurrent engineering) costs - fixed Independent of volume (i.e., number of units

made/sold)

Examples: design time and effort, maskgeneration, equipment, etc.

Recurrent costs - variable

proportional to volume

Examples: silicon processing, packaging, test

Most of these proportional to chip area


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NRE Cost is IncreasingNRE Cost is Increasing

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Total CostTotal CostCost per IC

Variable cost

volume

costfixedICpercostvariableICpercost +=

yieldtestfinal

packagingofcosttestdieofcostdieofcostcostvariable

++=


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Die CostDie Cost

Single die

Wafer

yielddie*waferperdies

waferofcostdieofcost =

From: http://www.amd.com

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Wafer sizeWafer size

From: http://www.sandpile.org

8 (200mm) 12 (300mm) 12 (300mm)

90nm CMOS 90nm CMOS 65nm CMOS

AMD Athlon


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YieldYield

%100waferperchipsofnumberTotal

waferperchipsgoodofNo.=Y

yieldDiewaferperDies

costWafercostDie

=

( )

areadie2

diameterwafer

areadie

diameter/2waferwaferperDies

2

=

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DefectsDefects

defects per unit area die areadie yield 1 ,

= +

where is approximately 3

( )( )4

-1 -3

1die cost die area

die/wafer die area yield die area

Yield = 1/4 Yield = 19/24


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Cost per TransistorCost per Transistor

0.00000010.0000001

0.0000010.000001

0.000010.00001

0.00010.0001

0.0010.001

0.010.01

0.10.111

19821982 19851985 19881988 19911991 19941994 19971997 20002000 20032003 20062006 20092009 20122012

cost:cost:--perper--transistortransistor

Fabrication cost per transistor

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Next LectureNext Lecture

CMOS transistors as switches

How to build an inverter

Design metrics

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Lecture2 IC Basics 2up