Lecture5 Memory 2up

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    EE141

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    EECS141 1Lecture #5

    EE141EE141--Fall 2010Fall 2010

    Digital IntegratedDigital IntegratedCircuitsCircuits

    Lecture 5Lecture 5

    Overview of SemiconductorOverview of Semiconductor

    MemoryMemory

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    EECS141 2Lecture #5

    AnnouncementsAnnouncements Please use the news group to ask questions

    Dont need a new program: tryhttp://groups.google.com

    For additional questions, send emails toee141@cory

    Reaches entire teaching staff

    Homework #2 due today

    Homework #3 due next Thursday Labs start tomorrow

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    EECS141 3Lecture #5

    Class MaterialClass Material

    Last lecture

    Detailed Switch Model

    CMOS Gates

    Design Rules

    Todays lecture

    Overview of semiconductor memory

    Reading (Chapter 12.1, 12.2.3, 12.3.1)

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    EECS141 4Lecture #5

    SemiconductorSemiconductor

    MemoryMemory

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    EECS141 5Lecture #5

    Why Memory?Why Memory?

    Intel 45nm Core 2

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    EECS141 6Lecture #5

    Semiconductor Memory ClassificationSemiconductor Memory Classification

    Read-Write MemoryNon-Volatile

    Read-Write

    Memory

    Read-Only Memory

    EPROM

    E2PROM

    FLASH

    Random

    Access

    Non-Random

    Access

    SRAM

    DRAM

    Mask-Programmed

    Programmable (PROM)

    FIFO

    Shift Register

    CAM

    LIFO

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    EECS141 7Lecture #5

    Random Access Memories (RAM)Random Access Memories (RAM)

    STATIC (SRAM)

    DYNAMIC (DRAM)

    Data stored as long as supply is applied

    Larger (6 transistors/cell)

    Fast

    Differential (usually)

    Periodic refresh required

    Smaller (1-3 transistors/cell)

    SlowerSingle Ended

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    EECS141 8Lecture #5

    Random Access Chip ArchitectureRandom Access Chip Architecture Conceptual: linear array

    Each box holds some data

    But this does not lead to a nice layout shape

    Too long and skinny

    Create a 2-D array

    Decode Row and Column

    address to get data

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    EECS141 9Lecture #5

    Basic Memory ArrayBasic Memory Array

    CORE:- keep square within a 2:1 ratio- rows are word lines- columns are bit lines

    DECODERS:- needed to reduce total numberof pins; N+M address lines for2N+M bits of storage

    Ex: if N+M=20 220= 1Mb

    MULTIPLEXING:- used to select one or more

    columns for input or outputof data

    - data in and out on columns

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    EECS141 10Lecture #5

    Basic Static Memory ElementBasic Static Memory Element

    If D is high, D_b will be driven low

    Which makes D stay high

    Positive feedback

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    EECS141 11Lecture #5

    Positive Feedback: BiPositive Feedback: Bi--StabilityStabilityVi1 Vo2

    Vo2 = Vi 1

    Vo1 = Vi 2

    V

    o

    1

    V

    i

    2

    5

    V

    o

    1

    V

    i

    2

    5

    V

    o

    1

    Vi1

    A

    C

    B

    Vo2

    Vi1 = Vo2

    Vo1 Vi2

    Vi2 = Vo1

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    EECS141 12Lecture #5

    Writing into a CrossWriting into a Cross--Coupled PairCoupled Pair

    Access transistor must be able to overpower the feedback

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    EECS141 13Lecture #5

    Writing aWriting a11

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    EECS141 14Lecture #5

    Memory CellMemory Cell

    Complementary data values are written (read) from two sides

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    EECS141 15Lecture #5

    SRAM ColumnSRAM Column

    WL2

    WL0

    WL3

    BL BL_B

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    EECS141 16Lecture #5

    SRAM Array LayoutSRAM Array Layout

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    EECS141 17Lecture #5

    65nm SRAM65nm SRAM

    ST/Philips/Motorola

    Access Transistor

    Pull down Pull up

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    EECS141 18Lecture #5

    DecodersDecoders

    Word 0

    Word 1

    Word 2

    Word N2 2

    Word N2 1

    Storagecell

    M bits M bits

    N

    w or ds

    S0

    S1

    S2

    SN2 2

    A 0

    A 1

    AK2 1

    K = log2N

    SN2 1

    Word 0

    Word 1

    Word 2

    Word N2 2

    Word N2 1

    Storagecell

    S0

    Input-Output(M bits)

    Intuitive architecture for N x M memoryToo many select signals:

    N words == N select signalsK = log2N

    Decoder reduces the number of select signals

    Input-Output(M bits)

    De cod er

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    EECS141 19Lecture #5

    Row DecodersRow Decoders

    Collection of 2M complex logic gatesOrganized in regular and dense fashion

    (N)AND Decoder

    NOR Decoder

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    EECS141 20Lecture #5

    Decoder Design ExampleDecoder Design Example

    Look at decoder for 256x256 memoryblock (8KBytes)

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    EECS141 21Lecture #5

    Problem SetupProblem Setup Goal: Build fastest, lowest possible power

    decoder with static CMOS logic

    What we know

    Basically need 256 ANDgates, each one of themdrives one word line

    N=8

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    EECS141 22Lecture #5

    Possible AND8Possible AND8

    Build 8-input NAND gate using 2-input gatesand inverters

    Is this the best we can do?

    Is this better than using fewer NAND4 gates?

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    EECS141 23Lecture #5

    Possible DecoderPossible Decoder 256 8-input AND gates

    Each built out oftree of NAND gatesand inverters

    Need to drive a lotof capacitance (SRAMcells)

    Whats the best way to do this?

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    EECS141 24Lecture #5

    Next LectureNext Lecture

    Buffer delay optimization