16
Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 iCMOS Multiplexer Data Sheet ADG1204 Rev. C Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2005–2016 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com FEATURES 1.5 pF off source capacitance <1 pC charge injection 33 V supply range 120 Ω on resistance Fully specified at ±15 V, +12 V No VL supply required 3 V logic-compatible inputs Rail-to-rail operation 14-lead TSSOP and 12-lead LFCSP Typical power consumption < 0.03 μW APPLICATIONS Automatic test equipment Data acquisition systems Battery-powered systems Sample-and-hold systems Audio signal routing Video signal routing Communication systems FUNCTIONAL BLOCK DIAGRAM ADG1204 S2 S1 D S4 S3 EN A1 A0 1 OF 4 DECODER 04779-001 Figure 1. GENERAL DESCRIPTION The ADG1204 is a complementary metal-oxide semiconductor (CMOS) analog multiplexer, comprising four single channels designed on an iCMOS (industrial CMOS) process. iCMOS® is a modular manufacturing process that combines high voltage CMOS and bipolar technologies. It enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no previous generation of high voltage devices has been able to achieve. Unlike analog ICs using conventional CMOS processes, iCMOS components can tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and reduced package size. The ultralow capacitance and charge injection of this multiplexer makes it an ideal solution for data acquisition and sample-and- hold applications, where low glitch and fast settling are required. Fast switching speed coupled with high signal bandwidth makes the device suitable for video signal switching. iCMOS construction ensures ultralow power dissipation, making the device ideally suited for portable and battery-powered instruments. The ADG1204 switches one of four inputs to a common output, D, as determined by the 3-bit binary address lines: A0, A1, and EN. Logic 0 on the EN pin disables the device. Each switch conducts equally well in both directions when on and has an input signal range that extends to the supplies. In the off condition, signal levels up to the supplies are blocked. All switches exhibit break- before-make switching action. PRODUCT HIGHLIGHTS 1. 1.5 pF off capacitance (±15 V supply). 2. <1 pC charge injection. 3. 3 V logic-compatible digital inputs: VIH = 2.0 V, VIL = 0.8 V. 4. No VL logic power supply required. 5. Ultralow power dissipation: <0.03 μW. 6. 14-lead TSSOP and 12-lead, 3 mm × 3 mm LFCSP packages.

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Page 1: Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 ... · Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 iCMOS Multiplexer Data Sheet ADG1204 Rev. C Document Feedback

Low Capacitance, Low Charge Injection,±15 V/+12 V, 4:1 iCMOS Multiplexer

Data Sheet ADG1204

Rev. C Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.Tel: 781.329.4700 ©2005–2016 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com

FEATURES 1.5 pF off source capacitance <1 pC charge injection 33 V supply range 120 Ω on resistance Fully specified at ±15 V, +12 V No VL supply required 3 V logic-compatible inputs Rail-to-rail operation 14-lead TSSOP and 12-lead LFCSP Typical power consumption < 0.03 μW

APPLICATIONS Automatic test equipment Data acquisition systems Battery-powered systems Sample-and-hold systems Audio signal routing Video signal routing Communication systems

FUNCTIONAL BLOCK DIAGRAM

ADG1204

S2

S1

D

S4

S3

ENA1A0

1 OF 4DECODER

0477

9-00

1

Figure 1.

GENERAL DESCRIPTION The ADG1204 is a complementary metal-oxide semiconductor (CMOS) analog multiplexer, comprising four single channels designed on an iCMOS (industrial CMOS) process. iCMOS® is a modular manufacturing process that combines high voltage CMOS and bipolar technologies. It enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no previous generation of high voltage devices has been able to achieve. Unlike analog ICs using conventional CMOS processes, iCMOS components can tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and reduced package size.

The ultralow capacitance and charge injection of this multiplexer makes it an ideal solution for data acquisition and sample-and-hold applications, where low glitch and fast settling are required. Fast switching speed coupled with high signal bandwidth makes the device suitable for video signal switching. iCMOS construction ensures ultralow power dissipation, making the device ideally suited for portable and battery-powered instruments.

The ADG1204 switches one of four inputs to a common output, D, as determined by the 3-bit binary address lines: A0, A1, and EN. Logic 0 on the EN pin disables the device. Each switch conducts equally well in both directions when on and has an input signal range that extends to the supplies. In the off condition, signal levels up to the supplies are blocked. All switches exhibit break-before-make switching action.

PRODUCT HIGHLIGHTS 1. 1.5 pF off capacitance (±15 V supply). 2. <1 pC charge injection. 3. 3 V logic-compatible digital inputs: VIH = 2.0 V, VIL = 0.8

V. 4. No VL logic power supply required. 5. Ultralow power dissipation: <0.03 μW. 6. 14-lead TSSOP and 12-lead, 3 mm × 3 mm LFCSP

packages.

Page 2: Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 ... · Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 iCMOS Multiplexer Data Sheet ADG1204 Rev. C Document Feedback

ADG1204 Data Sheet

Rev. C | Page 2 of 16

TABLE OF CONTENTS Features .............................................................................................. 1 Applications ....................................................................................... 1 Functional Block Diagram .............................................................. 1 General Description ......................................................................... 1 Product Highlights ........................................................................... 1 Revision History ............................................................................... 2 Specifications ..................................................................................... 3

Dual Supply ................................................................................... 3 Single Supply ................................................................................. 5

Absolute Maximum Ratings ............................................................ 7

ESD Caution...................................................................................7 Pin Configurations and Function Descriptions ............................8

Truth Table .....................................................................................8 Typical Performance Characteristics ..............................................9 Test Circuits ..................................................................................... 12 Terminology .................................................................................... 14 Outline Dimensions ....................................................................... 15

Ordering Guide .......................................................................... 15

REVISION HISTORY 3/16—Rev. B to Rev. C Changed LFCSP_VQ to LFCSP ................................... Throughout Changes to Figure 3 .......................................................................... 8 Updated Outline Dimensions ....................................................... 15 Changes to Ordering Guide .......................................................... 15 2/09—Rev. A to Rev. B Changes to Power Requirements, IDD, Digital Inputs = 5 V Parameter, Table 1 ............................................................................. 4 Changes to Power Requirements, IDD, Digital Inputs = 5 V Parameter, Table 2 ............................................................................. 6 Updated Outline Dimensions ....................................................... 15

7/06—Rev. 0 to Rev. A Updated Format .................................................................. Universal Changes to Table 1 ............................................................................. 3 Changes to Table 2 ............................................................................. 5 Changes to the Terminology Section ........................................... 14 7/05—Revision 0: Initial Version

Page 3: Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 ... · Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 iCMOS Multiplexer Data Sheet ADG1204 Rev. C Document Feedback

Data Sheet ADG1204

Rev. C | Page 3 of 16

SPECIFICATIONS DUAL SUPPLY VDD = 15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.

Table 1. Y Version1

Parameter 25°C −40°C to +85°C

−40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance (RON) 120 Ω typ VS = ±10 V, IS = −1 mA; see Figure 21

190 230 260 Ω max VDD = +13.5 V, VSS = −13.5 V On Resistance Match Between 3.5 Ω typ VS = ±10 V, IS = −1 mA

Channels (ΔRON) 6 10 12 Ω max On Resistance Flatness (RFLAT(ON)) 20 Ω typ VS = −5 V, 0 V, +5 V; IS = −1 mA

57 72 79 Ω max LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V

Source Off Leakage, IS (OFF) ±0.02 nA typ VS = ±10 V, VD = ∓10 V; see Figure 22 ±0.1 ±0.6 ±1 nA max Drain Off Leakage, ID (OFF) ±0.02 nA typ VS = ±10 V, VD = ∓10 V; see Figure 22 ±0.1 ±0.6 ±1 nA max Channel On Leakage, ID, IS (ON) ±0.02 nA typ VS = VD = ±10 V; see Figure 23

±0.2 ±0.6 ±1 nA max DIGITAL INPUTS

Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or INH 0.005 µA typ VIN = VINL or VINH ±0.1 µA max Digital Input Capacitance, CIN 2.5 pF typ

DYNAMIC CHARACTERISTICS2 Transition Time, tTRANS 120 ns typ RL = 300 Ω, CL = 35 pF

150 180 200 ns max VS = 10 V; see Figure 24 tON (EN) 70 ns typ RL = 300 Ω, CL = 35 pF

85 100 110 ns max VS = 10 V; see Figure 26 tOFF (EN) 90 ns typ RL = 300 Ω, CL = 35 pF

110 135 155 ns max VS = 10 V; see Figure 26 Break-Before-Make Time Delay, tD 25 ns typ RL = 300 Ω, CL = 35 pF 10 ns min VS1 = VS2 = 10 V; see Figure 25 Charge Injection −0.7 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 27 Off Isolation 85 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 28 Channel-to-Channel Crosstalk 80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 30 Total Harmonic Distortion + Noise 0.15 % typ RL = 10 kΩ, 5 V rms, f = 20 Hz to 20 kHz;

see Figure 31 Bandwidth −3 dB 800 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 29 CS (OFF) 1.2 pF typ f = 1 MHz, VS = 0 V 1.5 pF max f = 1 MHz, VS = 0 V CD (OFF) 3.6 pF typ f = 1 MHz, VS = 0 V 4.2 pF max f = 1 MHz, VS = 0 V CD, CS (ON) 5.5 pF typ f = 1 MHz, VS = 0 V 6.5 pF max f = 1 MHz, VS = 0 V

Page 4: Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 ... · Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 iCMOS Multiplexer Data Sheet ADG1204 Rev. C Document Feedback

ADG1204 Data Sheet

Rev. C | Page 4 of 16

Y Version1

Parameter 25°C −40°C to +85°C

−40°C to +125°C Unit Test Conditions/Comments

POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V IDD 0.001 µA typ Digital inputs = 0 V or VDD 1.0 µA max IDD 170 µA typ Digital inputs = 5 V 285 µA max ISS 0.001 µA typ Digital inputs = 0 V or VDD 1.0 µA max ISS 0.001 µA typ Digital inputs = 5 V

1.0 µA max 1 Y version temperature range is −40°C to +125°C. 2 Guaranteed by design, not subject to production test.

Page 5: Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 ... · Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 iCMOS Multiplexer Data Sheet ADG1204 Rev. C Document Feedback

Data Sheet ADG1204

Rev. C | Page 5 of 16

SINGLE SUPPLY VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 2. Y Version1

Parameter 25°C −40°C to +85°C

−40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH Analog Signal Range 0 V to VDD V On Resistance (RON) 300 Ω typ VS = 0 V to 10 V, IS = −1 mA;

see Figure 21 475 567 625 Ω max VDD = 10.8 V, VSS = 0 V On Resistance Match Between Channels 5 Ω typ VS = 0 V to 10 V, IS = −1 mA

(ΔRON) 16 26 27 Ω max On Resistance Flatness (RFLAT(ON)) 60 Ω typ VS = 3 V, 6 V, 9 V; IS = −1 mA

LEAKAGE CURRENTS VDD = 13.2 V Source Off Leakage, IS (OFF) ±0.02 nA typ VS = 1 V/10 V, VD = 10 V/1 V; ±0.1 ±0.6 ±1 nA max see Figure 22 Drain Off Leakage, ID (OFF) ±0.02 nA typ VS = 1 V/10 V, VD = 10 V/1 V; ±0.1 ±0.6 ±1 nA max see Figure 22 Channel On Leakage, ID, IS (ON) ±0.02 nA typ VS = VD = 1 V or 10 V; see Figure 23

±0.2 ±0.6 ±1 nA max DIGITAL INPUTS

Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.001 µA typ VIN = VINL or VINH

±0.1 µA max Digital Input Capacitance, CIN 2.5 pF typ

DYNAMIC CHARACTERISTICS2 Transition Time, tTRANS 150 ns typ RL = 300 Ω, CL = 35 pF

190 240 265 ns max VS = 8 V; see Figure 24 tON (EN) 95 ns typ RL = 300 Ω, CL = 35 pF 120 150 170 ns max VS = 8 V; see Figure 26 tOFF (EN) 100 ns typ RL = 300 Ω, CL = 35 pF 125 155 170 ns max VS = 8 V; see Figure 26 Break-Before-Make Time Delay, tD 50 ns typ RL = 300 Ω, CL = 35 pF 10 ns min VS1 = VS2 = 8 V; see Figure 25 Charge Injection −0.4 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF;

see Figure 27 Off Isolation 85 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;

see Figure 28 Channel-to-Channel Crosstalk 80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;

see Figure 30 Bandwidth −3 db 550 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 29 CS (OFF) 1.2 pF typ f = 1 MHz; VS = 6 V 1.5 pF max f = 1 MHz; VS = 6 V CD (OFF) 3.6 pF typ f = 1 MHz; VS = 6 V 4.2 pF max f = 1 MHz; VS = 6 V CD, CS (ON) 5.5 pF typ f = 1 MHz; VS = 6 V 6.5 pF max f = 1 MHz; VS = 6 V

Page 6: Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 ... · Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 iCMOS Multiplexer Data Sheet ADG1204 Rev. C Document Feedback

ADG1204 Data Sheet

Rev. C | Page 6 of 16

Y Version1

Parameter 25°C −40°C to +85°C

−40°C to +125°C Unit Test Conditions/Comments

POWER REQUIREMENTS VDD = 13.2 V IDD 0.001 µA typ Digital inputs = 0 V or VDD 1.0 µA max IDD 170 µA typ Digital inputs = 5 V

285 µA max 1 Y version temperature range is −40°C to +125°C. 2 Guaranteed by design, not subject to production test.

Page 7: Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 ... · Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 iCMOS Multiplexer Data Sheet ADG1204 Rev. C Document Feedback

Data Sheet ADG1204

Rev. C | Page 7 of 16

ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted.

Table 3. Parameter Rating VDD to VSS 35 V VDD to GND −0.3 V to +25 V VSS to GND +0.3 V to −25 V Analog Inputs1 VSS − 0.3 V to VDD + 0.3 V or

30 mA, whichever occurs first Digital Inputs1 GND − 0.3 V to VDD + 0.3 V or

30 mA, whichever occurs first Peak Current, S or D 100 mA (pulsed at 1 ms,

10% duty cycle maximum) Continuous Current 45 mA Operating Temperature Range

Automotive (Y Version) −40°C to +125°C Storage Temperature Range −65°C to +150°C Junction Temperature 150°C 14-Lead TSSOP, θJA Thermal

Impedance (4-Layer Board) 112°C/W

12-Lead LFCSP, θJA Thermal Impedance

80°C/W

Reflow Soldering Peak Temperature, Pb Free

260°C

1 Overvoltages at IN, S, or D are clamped by internal diodes. Current must be

limited to the maximum ratings given.

Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability.

Only one absolute maximum rating can be applied at any one time.

ESD CAUTION

Page 8: Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 ... · Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 iCMOS Multiplexer Data Sheet ADG1204 Rev. C Document Feedback

ADG1204 Data Sheet

Rev. C | Page 8 of 16

PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS

TOP VIEW(Not to Scale)

1

2

3

4

5

6

7

NC = NO CONNECT

EN

VSS

S1

NC

D

S2

A0 14

13

12

11

10

9

8

GND

VDD

S3

NC

NC

S4

A1

0477

9-00

2

ADG1204

Figure 2. TSSOP Pin Configuration

VSS

S1

S2

GND

VDD

S3

D

NC S4

EN A0

A1

NOTES1. NC = NO CONNECT. DO NOT CONNECT TO THIS PIN.2. THE EXPOSED PAD MUST BE TIED TO SUBSTRATE, VSS.

9

8

7

1

2

3

4 5 6

12 11 10

ADG1204TOP VIEW

(Not to Scale)

0477

9-00

3

Figure 3. LFCSP Pin Configuration

Table 4. Pin Function Descriptions Pin No.

Mnemonic Description TSSOP LFCSP 1 11 A0 Logic Control Input. 2 12 EN Active High Digital Input. When low, the device is disabled and all switches are off.

When high, Ax logic inputs determine on switches. 3 1 VSS Most Negative Power Supply Potential. 4 2 S1 Source Terminal. Can be an input or an output. 5 3 S2 Source Terminal. Can be an input or an output. 6 4 D Drain Terminal. Can be an input or an output. 7 to 9 5 NC No Connection. 10 6 S4 Source Terminal. Can be an input or an output. 11 7 S3 Source Terminal. Can be an input or an output. 12 8 VDD Most Positive Power Supply Potential. 13 9 GND Ground (0 V) Reference. 14 10 A1 Logic Control Input.

TRUTH TABLE

Table 5. EN A1 A0 S1 S2 S3 S4 0 X X Off Off Off Off 1 0 0 On Off Off Off 1 0 1 Off On Off Off 1 1 0 Off Off On Off 1 1 1 Off Off Off On

Page 9: Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 ... · Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 iCMOS Multiplexer Data Sheet ADG1204 Rev. C Document Feedback

Data Sheet ADG1204

Rev. C | Page 9 of 16

TYPICAL PERFORMANCE CHARACTERISTICS

SOURCE OR DRAIN VOLTAGE (V)

ON

RES

ISTA

NC

E (Ω

)

200

180

160

140

120

100

60

80

0

20

40

–18 –15 –12 –9 –6 –3 3 9 150 6 12 18

0477

9-01

0

TA = +25°C

VDD = +15VVSS = –15V

VDD = +16.5VVSS = –16.5V

VDD = +13.5VVSS = –13.5V

Figure 4. On Resistance as a Function of VD (VS), Dual Supply

SOURCE OR DRAIN VOLTAGE (V)

ON

RES

ISTA

NC

E (Ω

)

450

400

350

300

250

150

200

0

50

100

–5 –4 –3 –2 –1 2 40 1 3 5

0477

9-00

4

VDD = +5.5VVSS = –5.5V

TA = +25°C

Figure 5. On Resistance as a Function of VD (VS), Dual Supply

VDD = 13.2VVSS = 0V

SOURCE OR DRAIN VOLTAGE (V)

ON

RES

ISTA

NC

E (Ω

)

450

400

350

300

250

150

200

0

50

100

0 2 4 6 8 10 12 14

0477

9-00

5

VDD = 12VVSS = 0V

VDD = 10.8VVSS = 0V

TA = 25°C

Figure 6. On Resistance as a Function of VD (VS), Single Supply

SOURCE OR DRAIN VOLTAGE (V)

ON

RES

ISTA

NC

E (Ω

)

250

150

200

0

50

100

–15 –10 –5 0 5 10 15

0477

9-00

6

VDD = +15VVSS = –15V

TA = +125°C

TA = +25°C

TA = +85°C

TA = –40°C

Figure 7. On Resistance as a Function of VD (VS) for Different Temperatures,

Dual Supply

SOURCE OR DRAIN VOLTAGE (V)

ON

RES

ISTA

NC

E (Ω

)

600

400

500

300

200

0

100

0 2 4 6 8 10 12

0477

9-00

7

VDD = +12VVSS = 0V

TA = +125°C

TA = +25°C

TA = +85°C

TA = –40°C

Figure 8. On Resistance as a Function of VD (VS) for Different Temperatures,

Single Supply

TEMPERATURE (°C)

LEA

KA

GE

(nA

)

0.30

0.20

0.25

0.15

0.10

0.05

0

–0.05

–0.10200 40 60 80 100 120

0477

9-00

8

IS (OFF)

ID (OFF)

ID, IS (ON)

VDD = +16.5VVSS = –16.5VVBIAS = +10V/–10V

Figure 9. Leakage Currents as a Function of Temperature, Dual Supply

Page 10: Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 ... · Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 iCMOS Multiplexer Data Sheet ADG1204 Rev. C Document Feedback

ADG1204 Data Sheet

Rev. C | Page 10 of 16

TEMPERATURE (°C)

LEA

KA

GE

(nA

)

0.20

0.15

0.10

0.05

0

–0.15

–0.10

–0.05

–0.20200 40 60 80 100 120

0477

9-00

9

IS (OFF)

ID (OFF)

ID, IS (ON)

VDD = 13.2VVSS = 0VVBIAS = 10V/1V

Figure 10. Leakage Currents as a Function of Temperature, Single Supply

LOGIC, INX (V)

I DD

(µA

)

60

50

40

30

10

20

00 2 4 6 8 10 12 14

0477

9-01

1

VDD = +12V, VSS = 0V

VDD = +15V, VSS = –15V

IDD PER CHANNELTA = +25°C

Figure 11. IDD vs. Logic Level

VS (V)

CH

AR

GE

INJE

CTI

ON

(pC

)

6

4

2

0

–4

–2

–6–15 –10 –5 0 5 10 15

0477

9-01

4

VDD = +12V, VSS = 0V

VDD = +5V, VSS = –5V

VDD = +15V, VSS = –15V

SOURCE TO DRAINDRAIN TO SOURCETA = +25°C

Figure 12. Charge Injection vs. Source Voltage

TEMPERATURE (°C)

TIM

E (n

s)

250

200

150

100

50

0–40 –20 40200 60 80 100 120

0477

9-01

5

VDD = +12V, VSS = 0V

VDD = +15V, VSS = –15V

Figure 13. Transition Times vs. Temperature

FREQUENCY (Hz)

OFF

ISO

LATI

ON

(dB

)

0

–10

–20

–30

–40

–50

–60

–70

–80

–90

–100

–11010k 100k 1M 10M 100M 1G

0477

9-01

6

VDD = +15VVSS = –15VTA = +25°C

Figure 14. Off Isolation vs. Frequency

FREQUENCY (Hz)

CR

OSS

TALK

(dB

)

0

–10

–20

–30

–40

–50

–60

–70

–80

–90

–100

–120

–110

10k 100k 1M 10M 100M 1G

0477

9-01

7

VDD = +15VVSS = –15VTA = +25°C

S1 TO S2

S2 TO S4

Figure 15. Crosstalk vs. Frequency

Page 11: Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 ... · Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 iCMOS Multiplexer Data Sheet ADG1204 Rev. C Document Feedback

Data Sheet ADG1204

Rev. C | Page 11 of 16

FREQUENCY (Hz)

ON

RES

PON

SE (d

B)

0

–10

–5

–15

–25

–20

–3010k 100k 1M 10M 1G100M 10G

0477

9-01

8

VDD = +15VVSS = –15VTA = +25°C

Figure 16. On Response vs. Frequency

FREQUENCY (Hz)

THD

+ N

(%)

10.00

1.00

0.10

0.0110 100 1k 10k 100k

0477

9-01

9

LOAD = +10kΩTA = +25°C

VDD = +5V, VSS = –5V, VS = +3.5Vrms

VDD = +15V, VSS = –15V, VS = +5Vrms

Figure 17. THD + N vs. Frequency

VBIAS (V)

CA

PAC

ITA

NC

E (p

F)

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0–10 –8 –6 –4 –2 0 2 4 6 8 10

0477

9-03

1

S2

S3

S1

S4

D

VDD = +15VVSS = –15VTA = +25°C

Figure 18. Off Capacitance vs. Source Voltage

VBIAS (V)

CA

PAC

ITA

NC

E (p

F)

6.5

6.1

6.3

5.9

5.7

5.5

5.3

5.1

4.9

4.7

4.5–10 –8 –6 –4 –2 0 2 4 6 8 10

0477

9-03

2

S2

S3

S1

S4

VDD = +15VVSS = –15VTA = +25°C

Figure 19. On Capacitance vs. Source Voltage

VBIAS (V)

CA

PAC

ITA

NC

E (p

F)

9

7

8

5

6

4

3

2

1

020 4 6 8 10 12

0477

9-03

3

SOURCE/DRAIN ON

SOURCE OFF

DRAIN OFF

VDD = 12VVSS = 0VTA = 25°C

Figure 20. Capacitance vs. Source Voltage, Single Supply

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ADG1204 Data Sheet

Rev. C | Page 12 of 16

TEST CIRCUITS

IDS

S D

VS

0477

9-02

0

V

Figure 21. On Resistance

S D

VS

A A

VD

IS (OFF) ID (OFF)

0477

9-02

1

Figure 22. Off Leakage

S D A

VD

ID (ON)

NC

NC = NO CONNECT

0477

9-02

2

Figure 23. On Leakage

VS

S1

DGND CL

35pFRL300Ω

VOUT

50% 50%

90%90%

ADDRESSDRIVE (VIN))

VOUT

A0

A1

S4

S3

S2

VS1

VS4

EN2.4V

0V

3V

tTRANSITION

tTRANSITION

VDD0.1µF

VSS

VDD VSS

0.1µF

0477

9-02

3

Figure 24. Address to Output Switching Times

ADDRESSDRIVE (VIN)

VOUT

VS

S1

DGND CL

35pFRL300Ω

50Ω

VOUT

A0

A1

S4

S3

S2

VS1

EN2.4V

VDD0.1µF

VSS

VDD VSS

0.1µF

0477

9-02

4

tBBM

80% 80%

0V

3V

Figure 25. Break-Before-Make Time Delay

ENABLEDRIVE (VIN)

S1

DGND CL

35pFRL300Ω

VOUT

A0

A1

S4

S3

S2

VS

EN

VDD0.1µF

VSS

VDD VSS

0.1µF

VS 50Ω

0477

9-02

5

tOFF (EN)tON (EN)

50% 50%

0.9VO0.9VO

OUTPUT

0V

3V

VO

0V

Figure 26. Enable-to-Output Switching Delay

Page 13: Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 ... · Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 iCMOS Multiplexer Data Sheet ADG1204 Rev. C Document Feedback

Data Sheet ADG1204

Rev. C | Page 13 of 16

S D

VS

GND

RS

SW OFF

QINJ = CL × ΔVOUT

SW OFF

SW ON

SW OFF SW OFF

A2A1

EN

VDD VSS

VDD

DECODER

VSS

VOUT

VOUT

VIN

VIN

ΔVOUT

CL1nF

0477

9-02

6

SW ON

Figure 27. Charge Injection

VOUT

50Ω

NETWORKANALYZER

RL50Ω

S

D

50Ω

OFF ISOLATION = 20 logVOUT

VS

VS

VDD VSS

0.1µFVDD

0.1µFVSS

GND

0477

9-02

7

Figure 28. Off Isolation

VOUT

50Ω

NETWORKANALYZER

RL50Ω

S

D

INSERTION LOSS = 20 logVOUT WITH SWITCH

VOUT WITHOUT SWITCH

VS

VDD VSS

0.1µFVDD

0.1µFVSS

GND

0477

9-02

8

Figure 29. Bandwidth

CHANNEL-TO-CHANNEL CROSSTALK = 20 logVOUT

GND

S1

DS2

VOUT

NETWORKANALYZER

RL50Ω

R50Ω

VS

VS

VDD VSS

0.1µFVDD

0.1µFVSS

0477

9-02

9

Figure 30. Channel-to-Channel Crosstalk

VOUT

RS

AUDIO PRECISION

RL10kΩ

IN

VIN

S

DVS

V p-p

VDD VSS

0.1µFVDD

0.1µFVSS

GND

0477

9-03

0

Figure 31. THD + Noise

Page 14: Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 ... · Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 iCMOS Multiplexer Data Sheet ADG1204 Rev. C Document Feedback

ADG1204 Data Sheet

Rev. C | Page 14 of 16

TERMINOLOGY IDD The positive supply current.

ISS The negative supply current.

VD (VS) The analog voltage on Terminal D and Terminal S.

RON The ohmic resistance between D and S.

RFLAT(ON) Flatness is defined as the difference between the maximum and minimum value of on resistance, as measured over the specified analog signal range.

IS (OFF) The source leakage current with the switch off.

ID (OFF) The drain leakage current with the switch off.

ID, IS (ON) The channel leakage current with the switch on.

VINL The maximum input voltage for Logic 0.

VINH The minimum input voltage for Logic 1.

IINL (IINH) The input current of the digital input.

CS (OFF) The off switch source capacitance, which is measured with reference to ground.

CD (OFF) The off switch drain capacitance, which is measured with reference to ground.

CD, CS (On) The on switch capacitance, measured with reference to ground.

CIN The digital input capacitance.

tON (EN) The delay between applying the digital control input and the output switching on.

tOFF (EN) The delay between applying the digital control input and the output switching off.

tTRANS The delay time between the 50% and 90% points of the digital input and switch on condition when switching from one address state to another.

Charge Injection A measure of the glitch impulse transferred from the digital input to the analog output during switching.

Off Isolation A measure of unwanted signal coupling through an off switch.

Crosstalk A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance.

Bandwidth The frequency at which the output is attenuated by −3 dB.

On Response The frequency response of the on switch.

Insertion Loss The loss due to the on resistance of the switch.

Total Harmonic Distortion + Noise (THD + N) The ratio of the harmonic amplitude plus noise of the signal to the fundamental.

Page 15: Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 ... · Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 iCMOS Multiplexer Data Sheet ADG1204 Rev. C Document Feedback

Data Sheet ADG1204

Rev. C | Page 15 of 16

OUTLINE DIMENSIONS

COMPLIANT TO JEDEC STANDARDS MO-153-AB-1 0619

08-A

8°0°

4.504.404.30

14 8

71

6.40BSC

PIN 1

5.105.004.90

0.65 BSC

0.150.05 0.30

0.19

1.20MAX

1.051.000.80

0.200.09 0.75

0.600.45

COPLANARITY0.10

SEATINGPLANE

Figure 32. 14-Lead Thin Shrink Small Outline Package [TSSOP]

(RU-14) Dimensions shown in millimeters

1.451.30 SQ1.15

1118

08-A

10.50BSC

BOTTOM VIEWTOP VIEW

12

46

7

9

10

3

EXPOSEDPAD

PIN 1INDICATOR

3.103.00 SQ2.90

0.700.600.50

SEATINGPLANE

0.05 MAX0.02 NOM

0.20 REF

0.25 MIN

COPLANARITY0.08

PIN 1INDICATOR

0.300.230.18

COMPLIANT TO JEDEC STANDARDS MO-220-WEED.

FOR PROPER CONNECTION OFTHE EXPOSED PAD, REFER TOTHE PIN CONFIGURATION ANDFUNCTION DESCRIPTIONSSECTION OF THIS DATA SHEET.

0.800.750.70

Figure 33. 12-Lead Lead Frame Chip Scale Package [LFCSP]

3 mm × 3 mm Body and 0.75 mm Package Height (CP-12-4)

Dimensions shown in millimeters

ORDERING GUIDE Model1 Temperature Range Package Description Package Option ADG1204YRUZ −40°C to +125°C 14-Lead Thin Shrink Small Outline Package [TSSOP] RU-14 ADG1204YRUZ-REEL −40°C to +125°C 14-Lead Thin Shrink Small Outline Package [TSSOP] RU-14 ADG1204YRUZ-REEL7 −40°C to +125°C 14-Lead Thin Shrink Small Outline Package [TSSOP] RU-14 ADG1204YCPZ-500RL7 −40°C to +125°C 12-Lead Lead Frame Chip Scale Package [LFCSP] CP-12-4 ADG1204YCPZ-REEL7 −40°C to +125°C 12-Lead Lead Frame Chip Scale Package [LFCSP] CP-12-4 1 Z = RoHS Compliant Part.

Page 16: Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 ... · Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 iCMOS Multiplexer Data Sheet ADG1204 Rev. C Document Feedback

ADG1204 Data Sheet

Rev. C | Page 16 of 16

NOTES

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