Mitsubishi J1-Series 650V · Mitsubishi, with its new J1-series propose a family of power modules with voltages in the range of 650V and 1200V with a new direct cooling system for

©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 1

22 Bd Benoni Goullin44200 NANTES - FRANCE +33 2 40 18 09 16 [email protected] www.systemplus.fr

Mitsubishi J1-Series 650V High power modules for AutomotivePower Semiconductor report by Elena Barbarini October 2018 – sample

REVERSE COSTING® – STRUCTURAL, PROCESS & COST REPORT


TABLE of CONTENT

Overview / Introduction 4

o Executive Summary

o Reverse Costing Methodology

Company Profile 12

o Mitsubishi

o Product portfolio

Physical Analysis 16

o Synthesis of the Physical Analysis

o CT600CJ1A060 & CT1000CJ1B060

o Package analysis

Package opening

Package Cross-Section

o IGBT Die

IGBT Die View & Dimensions

IGBT Die Process

IGBT Die Cross-Section

Gen 6th vs Gen 7th CSTBT

o Diode Die

Diode Die View & Dimensions

Diode Die Process

Diode Die Cross-Section

Standard vs RFC diode

Manufacturing Process 126

o IGBT Front-End Process

o IGBT Fabrication Unit

o Diode Die Front-End Process

o Diode Die Fabrication Unit

o Final Test & Packaging Fabrication unit

Cost Analysis 138

o Synthesis of the cost analysis

o Yields Explanation & Hypotheses

o CT600CJ1A060 & CT1000CJ1B060

o IGBT die

IGBT Front-End Cost

IGBT Die Probe Test, Thinning & Dicing

IGBT Wafer Cost

IGBT Die Cost

o Diode die

Diode Front-End Cost

Diode Die Probe Test, Thinning & Dicing

Diode Wafer Cost

Diode Die Cost

o Complete Module

Packaging Cost

Final Test Cost

Component Cost

Price Analysis 162

o Estimation of selling price

Comparison 166

o Comparison with Infineon HybdridPack Drive

o Comparison with Tesla SiC module

Feedbacks 174

Company services 175


Overview / Introductiono Executive Summaryo Marketo Reverse Costing

Methodology

Company Profile & Supply Chain

Physical Analysis

Manufacturing Process Flow

Cost Analysis

Selling Price Analysis

Comparison

Related Reports

About System Plus

Executive Summary

The market for power module devices will have a 10.2% compound annual growth rate (CAGR) over the next five years. This will impact the power module packaging market, which will see a 9.5% CAGR, reaching a value of almost $1.8B.

Power modules have come a long way since the early stages of car electrification. They are now playing a key role in the power modulation through all EV/HEVs, from inverters to bi-directional converters. Packaging these modules has become critical due to several technical aspects: eg. moulding, high temperatures die attach, TIM, connections. They must combine good thermal and electrical efficiency while keeping low mass and volume. Also, to remain competitive in an open market, power module makers must deliver high reliability while remaining cost efficient.

Mitsubishi, with its new J1-series propose a family of power modules with voltages in the range of 650V and 1200V with a new direct cooling system for automotive applications. These modules are extra compact with ŘƛǊŜŎǘπŎƻƻƭƛƴƎ ǎǳōǎǘǊŀǘŜ 6-in-1 package with pin fin.¢ƘŜ modules integrate the latest Mitsubishi’IGBT with Gen7 CSTBT technology and the latest RFC diodes.

System Plus Consulting present a technology and cost analysis of two J1-series power modules with 650V and respectively 600A and 1000A, the CT600CJ1A060 and the CT1000CJ1B060. The report provides insights into their structure, technical choices, design, processes, supply chain positions and costs.

This report includes an analysis of the packaging and the IGBT and Diode die along with a cost analysis for all devices. It proposes also a complete comparison between the latest generations of Mitsubishi IGBT and diode. Finally, we compare the module with the technical choices of Infineon HybridPACK drive and the molded Tesla Power molded with ST SiC MOSFET.


Overview / Introduction

Company Profile & Supply Chain o Mitsubishi Profileo Mitsubishi Product

Physical Analysis


Cost Analysis


Comparison

Related Reports

About System Plus

J1 series 650V

Analysed devices

• Extra-compact, direct-cooling 6-in-1 package with cooling fin.• Inverter power-loss reduction and high reliability supported by 7th-generation IGBT chip applied CSTBT1 TM technology.• Application: EV & HEV• High reliability inverter• Low power loss 7th-generation IGBT chip applied CSTBT1 TM technology.• High reliability DLB2 structure• Direct cooling package with cooling fin• Compact, light-weight, high-power-density module• 6-switching elements per package (6-in-1, insulated type)• Built-in on-chip temperature sensor• Built-in on-chip current sensor for SC protection• Compliant with the Restriction of the use of certain Hazardous Substances in electrical and electronic equipment (RoHS) directive 2011/65/EU.



Company Profile & SupplyChain

Physical Analysiso Synthesiso CT600CJ1A060

o Packageo IGBTo Diode

o CT1000CJ1B060o Packageo IGBTo Diode


Cost Analysis


Comparison

Related Reports

About System Plus

Package dimensions

o {ǳōǎǘǊŀǘŜ pin fin size: xxx x xxx mm

o {ǳōǎǘǊŀǘŜ weight: xxxx

Package Tilted view

Package Back tilted view

nut

clips

P collector

The substrate is clipped to the plastic case and then themodules is fixed with epoxy resin

Direct potting resin








Cost Analysis


Comparison

Related Reports

About System Plus

Package opening

Package Opening

o The module is composed of six switch, each one containing xxx IGBT and xxx diode

The leadframes areinserted in the plasticcase

W

P Collector

VN Emitter

U

DLB: direct leadbonding








Cost Analysis


Comparison

Related Reports

About System Plus

DLB Connections

DLB Connections

DLB Connections

Around the IGBT there are small holesin the upper Al layer of the substrate








Cost Analysis


Comparison

Related Reports

About System Plus

xxx

mm

IGBT die dimensions

IGBT Die – Optical view

o Die dimensions:xxxmm² (1xxxmm x xxxmm)

o The mask marking is 687

xxx mm

gate

Emitter

Emitter

Marking– Optical view








Cost Analysis


Comparison

Related Reports

About System Plus

Die process Edge Termination

Transistor cross section – SEM View Transistor cross section – SEM View








Cost Analysis


Comparison

Related Reports

About System Plus

Die emitter design

Transistor design– SEM View








Cost Analysis


Comparison

Related Reports

About System Plus

Comparison between CSTBT 6th Gen & 7th Gen

Mitsubishi Gen 6th CSTBT

MOSFET Voltage Current Die Area Current density Jc Eoff Vce sat FOM Jc/(Vce*Eoff)

6th gen 1200V xx xxx xxx xxx xxx xxx

7th gen 650V xxx xxx xxx xxx xxx xxx

Mitsubishi Gen 7th CSTBT








Cost Analysis


Comparison

Related Reports

About System Plus

xxx

mm

Diode die Dimensions

Diode Die – Optical view

o Die dimensions: xxx mm² (xxxmm x xxxmm)

o Marking: E88

xxx mm

Diode Die – Marking








Cost Analysis


Comparison

Related Reports

About System Plus

Die cross section

Die cross section – SEM View Die cross section – SEM View

o Al layer thickness: xxxµm

Polyimide








Cost Analysis


Comparison

Related Reports

About System Plus

Package dimensions

o {ǳōǎǘǊŀǘŜ pin fin size: xxx x xxx mm

o {ǳōǎǘǊŀǘŜ weight: xxx g

o Resin weight: xxxg

Package Tilted view

nut

clips

The subastrate is clipped to theplastic case and then the modules is is fixed with epoxy resin

P Collector

N Emitter








Cost Analysis


Comparison

Related Reports

About System Plus

Wire bonding

Wire Bonding:

o xxxwire.

o Diameter: xxx µm.

o Medium length: xxx mm

o Total amount of wires: xxx

Wire bonding

X ray view








Cost Analysis


Comparison

Related Reports

About System Plus

Heatsink Cross-Section




Physical Analysis

Manufacturing Process Flowo Die Fab Unito Die Process Flowo Packaging Fab Unito Packaging Process flow

Cost Analysis


Comparison

Related Reports

About System Plus

Dies Overview

IGBT Front End process:

o Substrate: xxx-inch (xxxmm) Silicon

o Process type: Trench gate, HV IGBT

o Metal layers: Al metal layer + metallization on the back side

Test:

o Test type: Wafer sort (Probe test)

Diode Front End process:

o Substrate: xxx-inch (xxxxmm) Silicon

o Process type: Planar

o Metal layers: Al metal layer + metallization on the back side

Test:

o Test type: Wafer sort (Probe test)




Physical Analysis

Manufacturing Process Flowo Die Fab Unito Die Process Flowo Packaging Fab Unito Packaging Process flow

Cost Analysis


Comparison

Related Reports

About System Plus

IGBT Process Flow

IGBT Wafer Process:

o The manufacturing of the IGBT begins with the epitaxy, the implantation and the trench etching. Then the oxide layers and the polysilicon are deposited and patterned. Then the aluminum layer is deposited. Finally a thin passivation layer is reported.

o The wafer is thinned to have a final thickness of xxxµm. Finally, the metal layers on the backside are deposited.

o A polyimide protection layer is deposited on the guard ring.

IGBT Structure Schematic




Physical Analysis


Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost


Comparison

Related Reports

About System Plus

IGBT Front-End Cost

The front-end cost ranges from $xxx to $xxx according toyield variations.

The main part of the wafer cost is due to the xxxx(xxx%).




Physical Analysis




Comparison

Related Reports

About System Plus

Diode Front-End Cost

The front-end cost ranges from $xxx to $xxx according toyield variations.

The main part of the wafer cost is due to the xxx (xxx%).




Physical Analysis




Comparison

Related Reports

About System Plus

Diode Wafer Cost per process steps




Physical Analysis




Comparison

Related Reports

About System Plus

Diode Die Cost

The diode die cost ranges from $xxx to $xxx according toyield variations.

The Front-end manufacturing represents xxx% of thecomponent cost (medium yield estimation).

Probe test, dicing and scrap account for xx% of thecomponent cost.




Physical Analysis




Comparison

Related Reports

About System Plus

Packaging Cost




Physical Analysis


Cost Analysis


Comparison

Related Reports

About System Plus

Estimated Manufacturer Price CT600CJ1A060

The module manufacturing cost ranges from$xxx to $xxx according to yield variations.

By taking into account a gross margin of xxx%the module selling price is estimated to rangefrom $xxx to $xxx according to yield variations.




Physical Analysis


Cost Analysis


Comparison

Related Reports

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MARKET AND TECHNOLOGY REPORTS - YOLE DÉVELOPPEMENT

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Trends

https://www.systemplus.fr/reverse-costing-reports/infineon-fs820r08a6p2b-hybridpack-drive-igbt-module/

https://www.systemplus.fr/reverse-costing-reports/1200v-silicon-igbt-vs-sic-mosfet-comparison-2018/

https://www.systemplus.fr/reverse-costing-reports/tesla-model-3-inverter-with-sic-power-module-from-stmicroelectronics/

https://www.systemplus.fr/reverse-costing-reports/wolfspeed-c2m-1200v-sic-mosfet-c2m0025120d/

https://www.systemplus.fr/reverse-costing-reports/infineon-ff400r07a01e3-double-side-cooled-igbt-module/

https://www.systemplus.fr/reverse-costing-reports/rohm-1700v-sic-mosfet-sct2h12nzgc11-discrete/

https://www.systemplus.fr/reverse-costing-reports/stmicroelectronics-1200v-sic-mosfet-stc30n120/

https://www.systemplus.fr/reverse-costing-reports/1200v-sic-mosfet-vs-silicon-igbt-technology-and-cost-comparison/

https://www.systemplus.fr/reverse-costing-reports/rohm-1200v-trench-sic-mosfet-2/

https://www.systemplus.fr/reverse-costing-reports/wolfspeed-sic-900v-mosfet/

https://www.systemplus.fr/reverse-costing-reports/semikron-skim306gd12e4/

https://www.systemplus.fr/reverse-costing-reports/cree-1700v-sic-module/

https://www.systemplus.fr/reverse-costing-reports/cree-1200v-sic-module-2/

https://www.systemplus.fr/reverse-costing-reports/infineon-econopack4-1200v-igbt4-module-2/

https://www.systemplus.fr/reverse-costing-reports/rohm-sch2080ke-sic-power-mosfet-with-sic-sbd/







https://www.i-micronews.com/category-listing/product/power-sic-2018-materials-devices-and-applications.html

https://www.i-micronews.com/category-listing/product/power-module-packaging-2018-material-market-and-technology-trends.html






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Mitsubishi J1-Series 650V · Mitsubishi, with its new J1-series propose a family of power modules with voltages in the range of 650V and 1200V with a new direct cooling system for