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mm-Wave Silicon Transistor and Benchmark mm-Wave Silicon Transistor and Benchmark

Circuit Scaling Through the 2030 ITRS HorizonCircuit Scaling Through the 2030 ITRS Horizon

S.P. Voinigescu, S. Shopov, P. Chevalier*, J. Bateman, H. Farooq, A. Ye, Y. Xu,

K. Vasilakopoulos, and M. Dadash

University of Toronto

*) STMicroelectronics, Crolles, France

Sorin Voinigescu, May 25, 2015 2

AgendaAgenda

Applications of mm-wave silicon technology

HF Performance of State-of-the-Art Si Technology

SiGe HBT Device and Circuit Scaling

MOSFET scaling to 2nm

Conclusions


Applications of mm-wave technologyApplications of mm-wave technology

Tb/s wireless and fiberoptic ICs

mm-wave and THz active sensors

http://www.digitaljournal.com/pr/2557832

http://www.perasotech.com/2015/01/peraso-demonstrates-worlds-first-wigig-usb-3-0-adaptor-ces-2015/

http://www.digitaljournal.com/pr/2557832

http://www.perasotech.com/2015/01/peraso-demonstrates-worlds-first-wigig-usb-3-0-adaptor-ces-2015/http://www.perasotech.com/2015/01/peraso-demonstrates-worlds-first-wigig-usb-3-0-adaptor-ces-2015/http://www.perasotech.com/2015/01/peraso-demonstrates-worlds-first-wigig-usb-3-0-adaptor-ces-2015/


mm-Wave Sensor and Tag Applicationsmm-Wave Sensor and Tag Applications

Autonomous cars

Autonomous robots

Autonomous drones

Autonomous lawn-mower

Autonomous snow-blower?

IEEE Spectrum


Why mm-wave sensors?Why mm-wave sensors?

Work in hostile and poor visibility environments where

optical sensors fail

smoke, toxic gases, fire

night, fog, rain, heavy snow, mud

Higher resolution (compared to cellular/WiFi)

< 5mm

Can penetrate through clothes, wood, low-water content

materials

6

150-GHz monostatic single-chip sensor with 150-GHz monostatic single-chip sensor with BISTBIST

890 mW. 1.8/1.2V

130nm SiGe BiCMOS 230/280GHz

[I. Sarkas et al.CSICS 2012]

2.6mmx2.3mm

Receiver gain and noise figureReceiver gain and noise figure

7

142 143 144 145 146 147 148 149 150 151 152 1538

9

10

11

12

13

14

15

16

Gain

NF

Gai

n -

DS

B N

ois

e F

igu

re (

dB

)LO Frequency (GHz)

13-15 dB gain, 23 dB of gain control in LNA

Low noise figure: 8.5-10.5dB

8

Transmitter gain/Pout controlTransmitter gain/Pout control

•TX output power states measured without external mm-wave equipment


65-GHz multi-channel range sensor 65-GHz multi-channel range sensor

2-IQ receivers with differential transmitter

55-nm SiGe BiCMOS fT= 320 GHz, f

MAX = 350 GHz

1.1/1.2/1.8V supplies, 24 mW


Mm-Wave Active TagMm-Wave Active Tag

➢ Reflect signal from basestation back to basestation with ID

➢ Link budget similar to radar

➢ Requirements

➢ Low-power, ideally self-sufficient

➢ Very small form factor

➢ Long range operation (d > few meters)


mm-Wave active tag mm-Wave active tag

0.8mm0.55mm

Frequency: 77-81 GHz

G > 30 dB

NF < 7 dB

Si < -62 dBm

PD < 5 mW

Range > 10m when polled by

+10dBm base station

Wake-up detector

55nm SiGe BiCMOS

Funded by Robert Bosch GmbH.


AgendaAgenda





Conclusions

13

28nm FDSOI Technology Cross-section28nm FDSOI Technology Cross-section

• Unlike CMOS and FinFET processes, the body is floating

• Can control VT, ION, as well as, the fT and fMAX characteristics

14

VVTT linearly dependent on back gate bias linearly dependent on back gate bias

15

ffTT, f, fMAXMAX vs. V vs. V

GSGS, V, VBGBG Measurements Measurements

16

ffTT, f, fMAXMAX vs. I vs. I

DSDS


On-die Measurements: SiGe HBT MAG On-die Measurements: SiGe HBT MAG


On-die Measurements: SiGe HBT U, HOn-die Measurements: SiGe HBT U, H2121


BiCMOS55/28nm FDSOI: BiCMOS55/28nm FDSOI: ffTT

M. Schroeter et al. SiRF 2014


BiCMOS55/28nm FDSOI: BiCMOS55/28nm FDSOI: ffMAXMAX


SiGe HBT & n-MOSFET SiGe HBT & n-MOSFET MAG: J-BandMAG: J-Band


Cascodes and Series StackingCascodes and Series Stacking

2.2V

OUT

IN

2V

OUT

IN

S. Pornpromlikit et al, JSSC 2010

I. Sarkas et al, ISSC 2012


BiCMOS55 Cascode BiCMOS55 Cascode MAGMAG


4 n-MOS Series-Stacked 45nm SOI Cascode 4 n-MOS Series-Stacked 45nm SOI Cascode MAGMAG

[Balteanu et al, JSSC Oct.2014]

128x45nmx1.25um


138GHz Power DAC in 45nm SOI138GHz Power DAC in 45nm SOI

[S. Shopov, CSICS 2014]


Output Power vs. Input Power at D-BandOutput Power vs. Input Power at D-Band


3x40Gb/s SiPh Transceiver Array in 28nm FDSOI3x40Gb/s SiPh Transceiver Array in 28nm FDSOI

Substrate PCB

Si photonic die

Optical fibers

Electronic die Electronic die

28nmfdsoi_transceiver_eyes_at40Gbs_4Vswing_meas.mp4

[S. Shopov, ESSCIRC 2015]

http://www.eecg.toronto.edu/~sorinv/videos/28nmfdsoi_transceiver_eyes_at40Gbs_4Vswing_meas.mp4

28

Transmitter: Output Eye DiagramsTransmitter: Output Eye Diagrams

4.0Vpp

at 40 Gb/s


AgendaAgenda





Conclusions


SiGe HBT Scaling: SiGe HBT Scaling: ffTT, , ffMAXMAX


1D2D with parasitics


SiGe HBT Scaling: NFSiGe HBT Scaling: NFMINMIN, MAG, MAG

M. Schroeter et al. SiRF 2014NFMIN @ 60 GHzNoise Correlation


SiGe HBT PA & VCO ScalingSiGe HBT PA & VCO Scaling



SiGe HBT VCO and TIA BenchmarksSiGe HBT VCO and TIA Benchmarks


TIA in Node 1TIA in Node 1

0 25 50 75 100 125 150 175-20

-15

-10

-5

0

5

10

15

S-p

aram

eter

s, N

F [d

B]

frequency [GHz]

S21 meas S21 sim S11 meas S11 sim S22 meas S22 sim NF sim NF meas

BW3dB

= 93GHz

NF<5.5dB

[K. Vasilakopoulos,Submitted to BCTM 2015]


SiGe HBT TIA in Node 5SiGe HBT TIA in Node 5


SiGe HBT 220GHz PA in Node 5SiGe HBT 220GHz PA in Node 5



AgendaAgenda





Conclusions


Atomic Scale FETs: 2030 Time HorizonAtomic Scale FETs: 2030 Time Horizon

Traditional semiconductor channel

CNT

Graphene

Metal channel

3x3(4x4) atoms channel

•Classical simulation with Sentaurus

•Atomic level simulations using Atomistix from QuantumWise

3nm


Double-gate Si MOSFET scaling simulationDouble-gate Si MOSFET scaling simulation


Ideal IIdeal Ionon, g’, g’

mm, f, fTT scaling from 28nm to 2nm scaling from 28nm to 2nm

Sentaurus simulation


Impact of Contact Region ResistanceImpact of Contact Region Resistance

5nm p-MOSFET, Sentaurus simulation


Atomistix Si NW FET Scaling SimulationAtomistix Si NW FET Scaling Simulation


Comparison: Subthreshold CharacteristicsComparison: Subthreshold Characteristics(m

A)

Sentaurus Atomistix

VDS (V) 0.005 0.2 0.005 0.2

SS (mV/dec)

62.1 61.5 64 64.3

ION/IOFF ~5·10-9 ~5·10-9 ~8·10-9 ~5·10-9


Metallic ChannelsMetallic Channels

3nm long channels


ConclusionsConclusions

State-of-the-art SiGe BiCMOS and 28nm FDSOI have both fT and f

MAX

> 325 GHz

SiGe HBT circuit performance continues to scale

Atomistix shows MOSFET theoretically scalable to 2nm

CMOS performance scaling uncertain due to quantum effects

Ballistic transport

Bandgap increase

Surface scattering

Q of passives critical for low-power mm-wave IoT circuits


AcknowledgmentsAcknowledgments

NSERC, Robert Bosch GmbH, Ciena, Finisar for funding

STMicroelectronics, DARPA, and CMC for chip donations

Dr. Juergen Hasch of Robert Bosch

Prof. Michael Schroter (U. Dresden and UCSD)

Bernard Sautreuil and Andreia Cathelin (ST)

Jaro Pristupa and CMC for CAD and support

Integrant for EMX software

145-GHz Transceiver die: VCO range145-GHz Transceiver die: VCO range

47

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4142

143

144

145

146

147

148

149

150

151

152

Coarse = 1.4V

Coarse = 0.8V

Coarse = 0VO

scill

atio

n F

req

uen

cy (

GH

z)

Fine Control (V)

•143-152 GHz tuning range•PN=-103dBc/Hz @10MHz•PDC = 72 mW

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mm-Wave Silicon Transistor and Benchmark Circuit Scaling ...sorinv/theses/sv_gsmm_slides.pdf · Agenda Applications of mm-wave silicon technology ... mud Higher resolution (compared