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1
BSC093N15NS5
Rev.2.2,2016-06-10Final Data Sheet
12
34
56
78
43
21
56
78
SuperSO8
8 D
7 D
6 D
5 D
S 1
S 2
S 3
G 4
MOSFETOptiMOSTM5Power-Transistor,150V
Features•N-channel,normallevel•ExcellentgatechargexRDS(on)product(FOM)•Verylowon-resistanceRDS(on)•Verylowreverserecoverycharge(Qrr)•150°Coperatingtemperature•Pb-freeleadplating;RoHScompliant•QualifiedaccordingtoJEDEC1)fortargetapplication•Idealforhigh-frequencyswitchingandsynchronousrectification
Table1KeyPerformanceParametersParameter Value UnitVDS 150 V
RDS(on),max 9.3 mΩ
ID 87 A
Qrr 58 nC
Type/OrderingCode Package Marking RelatedLinksBSC093N15NS5 PG-TDSON-8 093N15NS -
1) J-STD20 and JESD22
2
OptiMOSTM5Power-Transistor,150VBSC093N15NS5
Rev.2.2,2016-06-10Final Data Sheet
TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3
OptiMOSTM5Power-Transistor,150VBSC093N15NS5
Rev.2.2,2016-06-10Final Data Sheet
1MaximumratingsatTA=25°C,unlessotherwisespecified
Table2MaximumratingsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Continuous drain current ID --
--
8755 A TC=25°C
TC=100°C
Pulsed drain current1) ID,pulse - - 348 A TC=25°C
Avalanche energy, single pulse2) EAS - - 130 mJ ID=50A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
Power dissipation Ptot - - 139 W TC=25°C
Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category;DIN IEC 68-1: 55/150/56
2Thermalcharacteristics
Table3ThermalcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - 0.54 0.9 K/W -
Thermal resistance, junction - ambient,6 cm2 cooling area3) RthJA - - 50 K/W -
3Electricalcharacteristics
Table4StaticcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 150 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 3.0 3.8 4.6 V VDS=VGS,ID=107µA
Zero gate voltage drain current IDSS --
0.110
1100 µA VDS=120V,VGS=0V,Tj=25°C
VDS=120V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on)--
7.98.7
9.310.5 mΩ VGS=10V,ID=44A
VGS=8V,ID=22A
Gate resistance4) RG - 0.9 1.4 Ω -
Transconductance gfs 34 67 - S |VDS|>2|ID|RDS(on)max,ID=44A
1) See Diagram 3 for more detailed information2) See Diagram 13 for more detailed information3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.PCB is vertical in still air.4) Defined by design. Not subject to production test
4
OptiMOSTM5Power-Transistor,150VBSC093N15NS5
Rev.2.2,2016-06-10Final Data Sheet
Table5DynamiccharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Input capacitance1) Ciss - 2430 3230 pF VGS=0V,VDS=75V,f=1MHz
Output capacitance1) Coss - 604 803 pF VGS=0V,VDS=75V,f=1MHz
Reverse transfer capacitance1) Crss - 15 26 pF VGS=0V,VDS=75V,f=1MHz
Turn-on delay time td(on) - 14 - ns VDD=75V,VGS=10V,ID=44A,RG,ext=3Ω
Rise time tr - 4.3 - ns VDD=75V,VGS=10V,ID=44A,RG,ext=3Ω
Turn-off delay time td(off) - 14.4 - ns VDD=75V,VGS=10V,ID=44A,RG,ext=3Ω
Fall time tf - 3.8 - ns VDD=75V,VGS=10V,ID=44A,RG,ext=3Ω
Table6Gatechargecharacteristics2)Values
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 14 - nC VDD=75V,ID=44A,VGS=0to10V
Gate to drain charge1) Qgd - 6.8 10.2 nC VDD=75V,ID=44A,VGS=0to10V
Switching charge Qsw - 13.4 - nC VDD=75V,ID=44A,VGS=0to10V
Gate charge total1) Qg - 33 40.7 nC VDD=75V,ID=44A,VGS=0to10V
Gate plateau voltage Vplateau - 5.7 - V VDD=75V,ID=44A,VGS=0to10V
Output charge1) Qoss - 91 121 nC VDD=75V,VGS=0V
Table7ReversediodeValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Diode continous forward current IS - - 87 A TC=25°C
Diode pulse current IS,pulse - - 348 A TC=25°C
Diode forward voltage VSD - 0.88 1.2 V VGS=0V,IF=44A,Tj=25°C
Reverse recovery time1) trr - 49 98 ns VR=75V,IF=44,diF/dt=100A/µs
Reverse recovery charge1) Qrr - 58 116 nC VR=75V,IF=44,diF/dt=100A/µs
1) Defined by design. Not subject to production test2) See ″Gate charge waveforms″ for parameter definition
5
OptiMOSTM5Power-Transistor,150VBSC093N15NS5
Rev.2.2,2016-06-10Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W
]
0 50 100 150 2000
20
40
60
80
100
120
140
160
Ptot=f(TC)
Diagram2:Draincurrent
TC[°C]
ID[A
]
0 50 100 150 2000
10
20
30
40
50
60
70
80
90
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
VDS[V]
ID[A
]
10-1 100 101 102 10310-2
10-1
100
101
102
103
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K
/W]
10-5 10-4 10-3 10-2 10-1 10010-2
10-1
100
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tp);parameter:D=tp/T
6
OptiMOSTM5Power-Transistor,150VBSC093N15NS5
Rev.2.2,2016-06-10Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 1 2 3 4 5 6 70
40
80
120
160
200
240
280
320
360
10V
8 V
7 V
6.5 V
6 V
5.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.drain-sourceonresistance
ID[A]
RDS(on
) [m
Ω]
0 40 80 120 160 200 240 280 3200
5
10
15
20
5.5 V
6 V
6.5 V
7 V
8 V
10 V
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
VGS[V]
ID[A
]
0 2 4 6 8 100
20
40
60
80
100
120
140
160
180
200
25 °C175 °C
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Diagram8:Typ.forwardtransconductance
ID[A]
gfs [S]
0 20 40 60 80 100 120 140 1600
20
40
60
80
100
120
140
gfs=f(ID);Tj=25°C
7
OptiMOSTM5Power-Transistor,150VBSC093N15NS5
Rev.2.2,2016-06-10Final Data Sheet
Diagram9:Drain-sourceon-stateresistance
Tj[°C]
RDS(on
) [m
Ω]
-60 -20 20 60 100 1400
5
10
15
20
max
typ
RDS(on)=f(Tj);ID=44A;VGS=10V
Diagram10:Typ.gatethresholdvoltage
Tj[°C]
VGS(th) [V]
-60 -20 20 60 100 1400.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1070 µA
107 µA
VGS(th)=f(Tj);VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
VDS[V]
C[p
F]
0 20 40 60 80 100100
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram12:Forwardcharacteristicsofreversediode
VSD[V]
IF [A]
0.0 0.5 1.0 1.5 2.0100
101
102
103
25 °C150 °C25°C max150°C max
IF=f(VSD);parameter:Tj
8
OptiMOSTM5Power-Transistor,150VBSC093N15NS5
Rev.2.2,2016-06-10Final Data Sheet
Diagram13:Avalanchecharacteristics
tAV[µs]
IAS [A]
100 101 102 103100
101
102
25 °C
100 °C
125 °C
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
Diagram14:Typ.gatecharge
Qgate[nC]
VGS [V]
0 10 20 30 400
2
4
6
8
10
30 V
75 V
120 V
VGS=f(Qgate);ID=44Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS
) [V]
-60 -20 20 60 100 140 180140
145
150
155
160
VBR(DSS)=f(Tj);ID=1mA
Gate charge waveforms
9
OptiMOSTM5Power-Transistor,150VBSC093N15NS5
Rev.2.2,2016-06-10Final Data Sheet
5PackageOutlines
Figure1OutlinePG-TDSON-8,dimensionsinmm
10
OptiMOSTM5Power-Transistor,150VBSC093N15NS5
Rev.2.2,2016-06-10Final Data Sheet
RevisionHistoryBSC093N15NS5
Revision:2016-06-10,Rev.2.2
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2015-10-09 Release of final version
2.1 2016-01-22 Update diagram 13
2.2 2016-06-10 Update trr and Qrr
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