MOSFET CoolMOS™ P6 - szlcsc.com

MOSFETMetalOxideSemiconductorFieldEffectTransistor

CoolMOS™P6600VCoolMOS™P6PowerTransistorIPL60R650P6S

DataSheetRev.2.0Final

PowerManagement&Multimarket

2

600VCoolMOS™P6PowerTransistor

IPL60R650P6S

Rev.2.0,2014-07-08Final Data Sheet

ThinPAK5x61DescriptionCoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse.Extremelylowswitchingandconductionlossesmakeswitchingapplicationsevenmoreefficient,morecompact,lighterandcooler.

Features•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss•Veryhighcommutationruggedness•Easytouse/drive•Pb-freeplating,Halogenfreemoldcompound•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20andJESD22)

ApplicationsPFCstages,hardswitchingPWMstagesandresonantswitchingPWMstagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,TelecomandUPS.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseperatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj,max 650 V

RDS(on),max 0.65 Ω

Qg,typ 12 nC

ID,pulse 16.5 A

Eoss@400V 1.8 µJ

Body diode di/dt 500 A/µs

Type/OrderingCode Package Marking RelatedLinksIPL60R650P6S ThinPAK 5x6 SMD 60P6650 see Appendix A

3


IPL60R650P6S


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

4


IPL60R650P6S


2MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current1) ID --

--

6.74.2 A TC = 25°C

TC = 100°C

Pulsed drain current2) ID,pulse - - 16.5 A TC=25°C

Avalanche energy, single pulse EAS - - 133 mJ ID =1.3A; VDD = 50V

Avalanche energy, repetitive EAR - - 0.20 mJ ID =1.3A; VDD = 50V

Avalanche current, repetitive IAR - - 1.3 A -

MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...480V

Gate source voltage VGS-20-30

--

2030 V static;

AC (f>1 Hz)

Power dissipation (non FullPAK) Ptot - - 56.8 W TC=25°C

Operating and storage temperature Tj,Tstg -40 - 150 °C -

Continuous diode forward current IS - - 5.8 A TC=25°C

Diode pulse current2) IS,pulse - - 16.2 A TC = 25°C

Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C

Maximum diode commutation speed3) dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C

3Thermalcharacteristics

Table3Thermalcharacteristics(nonFullPAK)Values


Thermal resistance, junction - case RthJC - - 2.2 °C/W -

Thermal resistance, junction - ambient RthJA - 35 62 °C/W

Device on 40mm*40mm*1.5 epoxyPCB FR4 with 6cm2 (one layer 70µmthick) copper area for drainconnection and cooling. PCB isvertical without blown air.

Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C reflow MSL1

1) Limited by Tj max. Maximum duty cycle D=0.752) Pulse width tp limited by Tj,max3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG

5


IPL60R650P6S


4Electricalcharacteristics

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA

Gate threshold voltage V(GS)th 3.50 4 4.50 V VDS=VGS,ID=0.2mA

Zero gate voltage drain current IDSS --

-10

1- µA VDS=600V,VGS=0V,Tj=25°C

VDS=600V,VGS=0V,Tj=150°C

Gate-source leakage curent IGSS - - 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

0.591.52

0.65- Ω VGS=10V,ID=2.4A,Tj=25°C

VGS=10V,ID=2.4A,Tj=150°C

Gate resistance RG - 11 - Ω f=1MHz,opendrain

Table5DynamiccharacteristicsValues


Input capacitance Ciss - 557 - pF VGS=0V,VDS=100V,f=1MHz

Output capacitance Coss - 28 - pF VGS=0V,VDS=100V,f=1MHz

Effective output capacitance, energyrelated1) Co(er) - 23 - pF VGS=0V,VDS=0...480V

Effective output capacitance, timerelated2) Co(tr) - 88 - pF ID=constant,VGS=0V,VDS=0...480V

Turn-on delay time td(on) - 11 - ns VDD=400V,VGS=13V,ID=3A,RG=6.8Ω

Rise time tr - 7 - ns VDD=400V,VGS=13V,ID=3A,RG=6.8Ω

Turn-off delay time td(off) - 33 - ns VDD=400V,VGS=13V,ID=3A,RG=6.8Ω

Fall time tf - 14 - ns VDD=400V,VGS=13V,ID=3A,RG=6.8Ω

Table6GatechargecharacteristicsValues


Gate to source charge Qgs - 3 - nC VDD=480V,ID=3A,VGS=0to10V

Gate to drain charge Qgd - 5 - nC VDD=480V,ID=3A,VGS=0to10V

Gate charge total Qg - 12 - nC VDD=480V,ID=3A,VGS=0to10V

Gate plateau voltage Vplateau - 6.1 - V VDD=480V,ID=3A,VGS=0to10V

1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS

6


IPL60R650P6S


Table7ReversediodecharacteristicsValues


Diode forward voltage VSD - 0.9 - V VGS=0V,IF=3A,Tf=25°C

Reverse recovery time trr - 196 - ns VR=400V,IF=3A,diF/dt=100A/µs

Reverse recovery charge Qrr - 1.7 - µC VR=400V,IF=3A,diF/dt=100A/µs

Peak reverse recovery current Irrm - 17 - A VR=400V,IF=3A,diF/dt=100A/µs

7


IPL60R650P6S


5Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 25 50 75 100 125 1500

10

20

30

40

50

60

Ptot=f(TC)

Diagram2:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-3

10-2

10-1

100

101

102

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-3

10-2

10-1

100

101

102

1 µs

10 µs

100 µs

1 ms

10 msDC

ID=f(VDS);TC=80°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-110-2

10-1

100

101

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tP);parameter:D=tp/T

8


IPL60R650P6S


Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

2

4

6

8

10

12

14

16

18

2020 V

10 V

8 V

7 V

6 V

5.5 V

5 V4.5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

2

4

6

8

10

1220 V

10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance

ID[A]

RDS(on

) [Ω]

0 5 10 151

2

3

4

5

20 V

5.5 V 6 V 6.5 V 7 V

10 V

RDS(on)=f(ID);Tj=125°C;parameter:VGS

Diagram8:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [Ω]

-50 -25 0 25 50 75 100 125 1500.00

0.20

0.40

0.60

0.80

1.00

1.20

1.40

1.60

1.80

2.00

98% typ

RDS(on)=f(Tj);ID=3A;VGS=10V

9


IPL60R650P6S


Diagram9:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 8 10 120

2

4

6

8

10

12

14

16

18

150 °C

25 °C

ID=f(VGS);VDS=20V;parameter:Tj

Diagram10:Typ.gatecharge

Qgate[nC]

VGS [V]

0 5 10 150

1

2

3

4

5

6

7

8

9

10

120 V

480 V

VGS=f(Qgate);ID=3Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.5 1.0 1.5 2.010-1

100

101

102

125 °C 25 °C

IF=f(VSD);parameter:Tj

Diagram12:Avalancheenergy

Tj[°C]

EAS [mJ]

25 50 75 100 125 1500

20

40

60

80

100

120

140

EAS=f(Tj);ID=1.3A;VDD=50V

10


IPL60R650P6S


Diagram13:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-75 -50 -25 0 25 50 75 100 125 150 175520

540

560

580

600

620

640

660

680

700

VBR(DSS)=f(Tj);ID=1mA

Diagram14:Typ.capacitances

VDS[V]

C[p

F]

0 100 200 300 400 500100

101

102

103

104

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=1MHz

Diagram15:Typ.Cossstoredenergy

VDS[V]

Eoss[µ

J]

0 100 200 300 400 5000.0

0.5

1.0

1.5

2.0

2.5

3.0

Eoss=f(VDS)

11


IPL60R650P6S


6TestCircuits

Table8DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform

t

V ,I

Irrm

IF

VDS

10 %Irrm

trrtF tS

QF QS

dIF / dt

dIrr / dt

VDS(peak)

Qrr = QF +QS

trr =tF +tS

VDS

IF

VDS

IF

Rg1

Rg 2

Rg1 = Rg 2

Table9SwitchingtimesSwitching times test circuit for inductive load Switching times waveform

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

VDS

VGS

Table10UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform

VDS

V(BR)DS

IDVDS

VDSID

12


IPL60R650P6S


7PackageOutlines

E2

K1

K2

e

MILLIMETERS

A

DIM

MIN MAX

INCHES

MIN MAX

1

SCALE

Z8B00172997

REVISION

ISSUE DATE

EUROPEAN PROJECTION

01

17-04-2014

0

2mm

0

1

DOCUMENT NO.

b1

c

D

D1

E

E1

N

L

0.90 1.10 0.035 0.043

0.00

0.10

4.90

4.11

5.90

2.60

0.45

0.05

0.30

5.10

4.31

6.10

2.80

0.65

0.000

0.004

0.193

0.162

0.232

0.102

0.018

0.002

0.012

0.201

0.170

0.240

0.110

0.026

0.30

8

0.50

8

0.012 0.020

1.27 (BSC) 0.05 (BSC)

b 0.30 0.50 0.012 0.020

1.80 2.00 0.071 0.079

0.20 0.40 0.008 0.016

L1 0.45 0.65 0.018 0.026

Figure1OutlineThinPAK5x6SMD,dimensionsinmm/inches

13


IPL60R650P6S


8AppendixA

Table11RelatedLinks

• IFXCoolMOSWebpage:www.infieon.com

• IFXDesigntools:www.infineon.com

http://www.infineon.com/cms/en/product/promopages/designtools/index.html

http://www.infieon.com/p6

14


IPL60R650P6S


RevisionHistoryIPL60R650P6S

Revision:2014-07-08,Rev.2.0

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2014-07-08 Release of final version

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PublishedbyInfineonTechnologiesAG81726München,Germany©2014InfineonTechnologiesAGAllRightsReserved.

LegalDisclaimerTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

InformationForfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineonTechnologiesOffice(www.infineon.com).

WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

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