MOSFET CoolMOS™ P6 - Farnell

MOSFETMetalOxideSemiconductorFieldEffectTransistor

CoolMOS™P6600VCoolMOS™P6PowerTransistorIPx60R125P6

DataSheetRev.2.0Final

PowerManagement&Multimarket

2

600VCoolMOS™P6PowerTransistor

IPW60R125P6,IPP60R125P6,IPA60R125P6

Rev.2.0,2014-03-07Final Data Sheet

TO-247tab

TO-220 TO-220FP

DrainPin 2, Tab

GatePin 1

SourcePin 3

1DescriptionCoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse.Extremelylowswitchingandconductionlossesmakeswitchingapplicationsevenmoreefficient,morecompact,lighterandcooler.

Features•IncreasedMOSFETdv/dtruggedness•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss•Veryhighcommutationruggedness•Easytouse/drive•Pb-freeplating,Halogenfreemoldcompound•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20andJESD22)

ApplicationsPFCstages,hardswitchingPWMstagesandresonantswitchingstagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,TelecomandUPS.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj,max 650 V

RDS(on),max 125 mΩ

Qg.typ 56 nC

ID,pulse 87 A

Eoss@400V 7.2 µJ

Body diode di/dt 300 A/µs

Type/OrderingCode Package Marking RelatedLinksIPW60R125P6 PG-TO 247

IPP60R125P6 PG-TO 220

IPA60R125P6 PG-TO 220 FullPAK

6R125P6 see Appendix A

3




TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

4




2MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current 1) ID --

--

30.019.0 A TC=25°C

TC=100°C

Pulsed drain current 2) ID,pulse - - 87 A TC=25°C

Avalanche energy, single pulse EAS - - 636 mJ ID=5.2A; VDD=50V; see table 10

Avalanche energy, repetitive EAR - - 0.96 mJ ID=5.2A; VDD=50V; see table 10

Avalanche current, repetitive IAR - - 5.2 A -

MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V

Gate source voltage (static) VGS -20 - 20 V static;

Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)

Power dissipation (Non FullPAK) TO-220, TO-247 Ptot - - 219 W TC=25°C

Power dissipation (FullPAK) TO-220FP Ptot - - 34 W TC=25°C

Storage temperature Tstg -55 - 150 °C -

Operating junction temperature Tj -55 - 150 °C -

Mounting torque (Non FullPAK) TO-220, TO-247 - - - 60 Ncm M3 and M3.5 screws

Mounting torque (FullPAK) TO-220FP - - - 50 Ncm M2.5 screws

Continuous diode forward current IS - - 26.0 A TC=25°C

Diode pulse current2) IS,pulse - - 87 A TC=25°C

Reverse diode dv/dt 3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°Csee table 8

Maximum diode commutation speed dif/dt - - 300 A/µs VDS=0...400V,ISD<=IS,Tj=25°Csee table 8

Insulation withstand voltage forTO-220FP VISO - - 2500 V Vrms,TC=25°C,t=1min

1) Limited by Tj max. Maximum duty cycle D=0.75 2) Pulse width tp limited by Tj,max3)IdenticallowsideandhighsideswitchwithidenticalRG

5




3Thermalcharacteristics

Table3Thermalcharacteristics(NonFullPAK)TO-220,TO-247Values


Thermal resistance, junction - case RthJC - - 0.57 °C/W -

Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded

Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s

Table4Thermalcharacteristics(FullPAK)TO-220FPValues


Thermal resistance, junction - case RthJC - - 3.65 °C/W -

Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded

Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s

6




4ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified

Table5StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA

Gate threshold voltage V(GS)th 3.5 4.0 4.5 V VDS=VGS,ID=0.96mA

Zero gate voltage drain current IDSS --

-10

2- µA VDS=600,VGS=0V,Tj=25°C

VDS=600,VGS=0V,Tj=150°C

Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

0.1130.293

0.125- Ω VGS=10V,ID=11.6A,Tj=25°C

VGS=10V,ID=11.6A,Tj=150°C

Gate resistance RG - 1.7 - Ω f=1MHz,opendrain

Table6DynamiccharacteristicsValues


Input capacitance Ciss - 2660 - pF VGS=0V,VDS=100V,f=1MHz

Output capacitance Coss - 110 - pF VGS=0V,VDS=100V,f=1MHz

Effective output capacitance, energy related 1) Co(er) - 90 - pF VGS=0V,VDS=0...400V

Effective output capacitance, time related 2) Co(tr) - 398 - pF ID=constant,VGS=0V,VDS=0...400V

Turn-on delay time td(on) - 14 - ns VDD=400V,VGS=13V,ID=14.5A,RG=1.7Ω;seetable9

Rise time tr - 9 - ns VDD=400V,VGS=13V,ID=14.5A,RG=1.7Ω;seetable9

Turn-off delay time td(off) - 44 - ns VDD=400V,VGS=13V,ID=14.5A,RG=1.7Ω;seetable9

Fall time tf - 5 - ns VDD=400V,VGS=13V,ID=14.5A,RG=1.7Ω;seetable9

Table7GatechargecharacteristicsValues


Gate to source charge Qgs - 16 - nC VDD=400V,ID=14.5A,VGS=0to10V

Gate to drain charge Qgd - 20 - nC VDD=400V,ID=14.5A,VGS=0to10V

Gate charge total Qg - 56 - nC VDD=400V,ID=14.5A,VGS=0to10V

Gate plateau voltage Vplateau - 6.1 - V VDD=400V,ID=14.5A,VGS=0to10V

1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

7




Table8ReversediodecharacteristicsValues


Diode forward voltage VSD - 0.9 - V VGS=0V,IF=14.5A,Tj=25°C

Reverse recovery time trr - 385 - ns VR=400V,IF=14.5A,diF/dt=100A/µs;see table 8

Reverse recovery charge Qrr - 7 - µC VR=400V,IF=14.5A,diF/dt=100A/µs;see table 8

Peak reverse recovery current Irrm - 32 - A VR=400V,IF=14.5A,diF/dt=100A/µs;see table 8

8




5Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation(NonFullPAK)

TC[°C]

Ptot[W

]

0 25 50 75 100 125 1500

50

100

150

200

250

Ptot=f(TC)

Diagram2:Powerdissipation(FullPAK)

TC[°C]

Ptot[W

]

0 25 50 75 100 125 1500

5

10

15

20

25

30

35

40

Ptot=f(TC)

Diagram3:Max.transientthermalimpedance(NonFullPAK)

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-110-2

10-1

100

101

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tP);parameter:D=tp/T

Diagram4:Max.transientthermalimpedance(FullPAK)

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-1 100 10110-2

10-1

100

101

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tP);parameter:D=tp/T

9




Diagram5:Safeoperatingarea(NonFullPAK)

VDS[V]

ID[A

]

100 101 102 10310-3

10-2

10-1

100

101

102

103

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram6:Safeoperatingarea(FullPAK)

VDS[V]

ID[A

]

100 101 102 10310-4

10-3

10-2

10-1

100

101

102

103

1 µs

10 µs

100 µs

1 ms

10 ms

DC


Diagram7:Safeoperatingarea(NonFullPAK)

VDS[V]

ID[A

]

100 101 102 10310-3

10-2

10-1

100

101

102

1 µs

10 µs

100 µs

1 ms

10 ms

DC


Diagram8:Safeoperatingarea(FullPAK)

VDS[V]

ID[A

]

100 101 102 10310-4

10-3

10-2

10-1

100

101

1021 µs

10 µs

100 µs

1 ms

10 ms

DC


10




Diagram9:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

10

20

30

40

50

60

70

80

9020 V

10 V

8 V

7 V

6 V

5.5 V

5 V4.5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram10:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

5

10

15

20

25

30

35

40

45

50

5520 V

10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=125°C;parameter:VGS

Diagram11:Typ.drain-sourceon-stateresistance

ID[A]

RDS(on

) [Ω]

0 5 10 15 20 25 30 35 40 45 500.20

0.25

0.30

0.35

0.40

0.45

0.50

0.55

20 V

5.5 V 6 V 6.5 V 7 V

10 V

RDS(on)=f(ID);Tj=125°C;parameter:VGS

Diagram12:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [Ω]

-50 -25 0 25 50 75 100 125 1500.05

0.10

0.15

0.20

0.25

0.30

98% typ

RDS(on)=f(Tj);ID=11.6A;VGS=10V

11




Diagram13:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 8 10 12 140

10

20

30

40

50

60

70

80

90

100

25 °C

150 °C

ID=f(VGS);VDS=20V;parameter:Tj

Diagram14:Typ.gatecharge

Qgate[nC]

VGS [V]

0 10 20 30 40 50 600

1

2

3

4

5

6

7

8

9

10

480 V120 V

VGS=f(Qgate);ID=14.5Apulsed;parameter:VDD

Diagram15:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.5 1.0 1.5 2.010-1

100

101

102

125 °C 25 °C

IF=f(VSD);parameter:Tj

Diagram16:Avalancheenergy

Tj[°C]

EAS [mJ]

25 50 75 100 125 1500

100

200

300

400

500

600

700

EAS=f(Tj);ID=5.2A;VDD=50V

12




Diagram17:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-75 -50 -25 0 25 50 75 100 125 150 175520

540

560

580

600

620

640

660

680

700

VBR(DSS)=f(Tj);ID=1mA

Diagram18:Typ.capacitances

VDS[V]

C[p

F]

0 100 200 300 400 500100

101

102

103

104

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=1MHz

Diagram19:Typ.Cossstoredenergy

VDS[V]

Eoss[µ

J]

0 100 200 300 400 5000

1

2

3

4

5

6

7

8

9

10

Eoss=f(VDS)

13




6TestCircuits

Table9DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform

t

V ,I

Irrm

IF

VDS

10 %Irrm

trrtF tS

QF QS

dIF / dt

dIrr / dt

VDS(peak)

Qrr = QF +QS

trr =tF +tS

VDS

IF

VDS

IF

Rg1

Rg 2

Rg1 = Rg 2

Table10SwitchingtimesSwitching times test circuit for inductive load Switching times waveform

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

VDS

VGS

Table11UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform

VDS

VD

V(BR)DS

IDVDS

VDSID

14




7PackageOutlines

Figure1OutlinePG-TO247,dimensionsinmm/inches

15




Figure2OutlinePG-TO220,dimensionsinmm/inches

16




Figure3OutlinePG-TO220FullPAK,dimensionsinmm/inches

17




8AppendixA

Table12RelatedLinks

• IFXCoolMOSTMP6Webpage:www.infineon.com

• IFXCoolMOSTMP6applicationnote:www.infineon.com

• IFXCoolMOSTMP6simulationmodel:www.infineon.com

• IFXDesigntools:www.infineon.com

http://www.infineon.com/cms/en/product/promopages/designtools/index.html

http://www.infineon.com/P6



18




RevisionHistoryIPW60R125P6, IPP60R125P6, IPA60R125P6

Revision:2014-03-07,Rev.2.0

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2014-03-07 Release of final version

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PublishedbyInfineonTechnologiesAG81726München,Germany©2014InfineonTechnologiesAGAllRightsReserved.

LegalDisclaimerTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

InformationForfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineonTechnologiesOffice(www.infineon.com).

WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

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MOSFET CoolMOS™ P6 - Farnell