MOSFET - docs.rs-online.com · 3 OptiMOSTM Power-MOSFET, 40 V BSC014N04LS Final Data Sheet Rev. 2.4, 2016-05-04 1 Maximum ratings at TA=25 °C, unless otherwise specified Table 2

1

BSC014N04LS

Rev.2.4,2016-05-04Final Data Sheet

12

34

56

78

43

21

56

78

TDSON-8FL(enlargedsourceinterconnection)

8 D

7 D

6 D

5 D

S 1

S 2

S 3

G 4

MOSFETOptiMOSTMPower-MOSFET,40V

Features•Optimizedforsynchronousrectification•Verylowon-stateresistanceRDS(on)•100%avalanchetested•Superiorthermalresistance•N-channel,logiclevel•QualifiedaccordingtoJEDEC1)fortargetapplications•Pb-freeleadplating;RoHScompliant•Halogen-freeaccordingtoIEC61249-2-21•Highersolderjointreliabilityduetoenlargedsourceinterconnection

Table1KeyPerformanceParametersParameter Value UnitVDS 40 V

RDS(on),max 1.4 mΩ

ID 100 A

Qoss 54 nC

Qg(0V..10V) 61 nC

Type/OrderingCode Package Marking RelatedLinksBSC014N04LS TDSON-8 FL 014N04LS -

1) J-STD20 and JESD22

2

OptiMOSTMPower-MOSFET,40VBSC014N04LS


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

3



1MaximumratingsatTA=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current ID

-----

-----

10010010010032

A

VGS=10V,TC=25°CVGS=10V,TC=100°CVGS=4.5V,TC=25°CVGS=4.5V,TC=100°CVGS=10V,TA=25°C,RthJA=50K/W1)

Pulsed drain current2) ID,pulse - - 400 A TC=25°C

Avalanche current, single pulse3) IAS - - 50 A TC=25°C

Avalanche energy, single pulse EAS - - 170 mJ ID=50A,RGS=25Ω

Gate source voltage VGS -20 - 20 V -

Power dissipation Ptot--

--

962.5 W TC=25°C

TA=25°C,RthJA=50K/W1)

Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category;DIN IEC 68-1: 55/150/56

2Thermalcharacteristics

Table3ThermalcharacteristicsValues


Thermal resistance, junction - case,bottom RthJC - 0.8 1.3 K/W -

Thermal resistance, junction - case,top RthJC - - 20 K/W -

Device on PCB,6 cm2 cooling area1) RthJA - - 50 K/W -

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drainconnection. PCB is vertical in still air.2) See Diagram 3 for more detailed information3) See Diagram 13 for more detailed information

4



3Electricalcharacteristics

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 40 - - V VGS=0V,ID=1mA

Gate threshold voltage VGS(th) 1.2 - 2 V VDS=VGS,ID=250µA

Zero gate voltage drain current IDSS --

0.110

1100 µA VDS=40V,VGS=0V,Tj=25°C

VDS=40V,VGS=0V,Tj=125°C

Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

1.51.1

1.91.4 mΩ VGS=4.5V,ID=50A

VGS=10V,ID=50A

Gate resistance1) RG 0.45 0.9 1.8 Ω -

Transconductance gfs 120 230 - S |VDS|>2|ID|RDS(on)max,ID=50A

Table5DynamiccharacteristicsValues


Input capacitance1) Ciss - 4300 6020 pF VGS=0V,VDS=20V,f=1MHz

Output capacitance1) Coss - 1200 1680 pF VGS=0V,VDS=20V,f=1MHz

Reverse transfer capacitance1) Crss - 100 200 pF VGS=0V,VDS=20V,f=1MHz

Turn-on delay time td(on) - 8 - ns VDD=20V,VGS=10V,ID=50A,RG,ext,ext=1.6Ω

Rise time tr - 9 - ns VDD=20V,VGS=10V,ID=50A,RG,ext,ext=1.6Ω

Turn-off delay time td(off) - 35 - ns VDD=20V,VGS=10V,ID=50A,RG,ext,ext=1.6Ω

Fall time tf - 7 - ns VDD=20V,VGS=10V,ID=50A,RG,ext,ext=1.6Ω

Table6Gatechargecharacteristics2)Values


Gate to source charge Qgs - 11 - nC VDD=20V,ID=50A,VGS=0to10V

Gate charge at threshold Qg(th) - 6.9 - nC VDD=20V,ID=50A,VGS=0to10V

Gate to drain charge1) Qgd - 9.8 14 nC VDD=20V,ID=50A,VGS=0to10V

Switching charge Qsw - 14 - nC VDD=20V,ID=50A,VGS=0to10V

Gate charge total1) Qg - 61 85 nC VDD=20V,ID=50A,VGS=0to10V

Gate plateau voltage Vplateau - 2.5 - V VDD=20V,ID=50A,VGS=0to10V

Gate charge total1) Qg - 31 44 nC VDD=20V,ID=50A,VGS=0to4.5V

Gate charge total, sync. FET Qg(sync) - 24 - nC VDS=0.1V,VGS=0to4.5V

Output charge1) Qoss - 54 76 nC VDD=20V,VGS=0V

1) Defined by design. Not subject to production test2) See ″Gate charge waveforms″ for parameter definition

5



Table7ReversediodeValues


Diode continuous forward current IS - - 96 A TC=25°C

Diode pulse current IS,pulse - - 400 A TC=25°C

Diode forward voltage VSD - 0.82 1 V VGS=0V,IF=50A,Tj=25°C

Reverse recovery time1) trr - 32 64 ns VR=20V,IF=50A,diF/dt=400A/µs

Reverse recovery charge Qrr - 98 - nC VR=20V,IF=50A,diF/dt=400A/µs

1) Defined by design. Not subject to production test

6



4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 40 80 120 1600

20

40

60

80

100

120

Ptot=f(TC)

Diagram2:Draincurrent

TC[°C]

ID[A

]

0 40 80 120 1600

20

40

60

80

100

120

ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

10-1 100 101 10210-1

100

101

102

103

1 µs10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-6 10-5 10-4 10-3 10-2 10-1 10010-3

10-2

10-1

100

101

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tp);parameter:D=tp/T

7



Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 1 20

50

100

150

200

250

300

350

400

3.5 V

4 V

4.5 V5 V

10 V

3.2 V

3 V

2.8 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.drain-sourceonresistance

ID[A]

RDS(on

) [m

Ω]

0 10 20 30 40 500.5

1.0

1.5

2.0

2.5

3.0

2.8 V

3 V

3.2 V

3.5 V

4 V4.5 V5 V

10 V

RDS(on)=f(ID);Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 1 2 3 4 50

80

160

240

320

400

150 °C 25 °C

ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj

Diagram8:Typ.forwardtransconductance

ID[A]

gfs [S]

0 20 40 60 80 1000

80

160

240

320

gfs=f(ID);Tj=25°C

8



Diagram9:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [m

Ω]

-60 -20 20 60 100 1400.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

max

typ

RDS(on)=f(Tj);ID=50A;VGS=10V

Diagram10:Typ.gatethresholdvoltage

Tj[°C]

VGS(th) [V]

-60 -20 20 60 100 1400.0

0.5

1.0

1.5

2.0

2.5

250 µA

VGS(th)=f(Tj);VGS=VDS;ID=250µA

Diagram11:Typ.capacitances

VDS[V]

C[p

F]

0 10 20 30 40101

102

103

104

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=1MHz

Diagram12:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.5 1.0 1.5100

101

102

103

25 °C150 °C25 °C, max150 °C, max

IF=f(VSD);parameter:Tj

9



Diagram13:Avalanchecharacteristics

tAV[µs]

IAV [A]

100 101 102 103100

101

102

25 °C

100 °C

125 °C

IAS=f(tAV);RGS=25Ω;parameter:Tj(start)

Diagram14:Typ.gatecharge

Qgate[nC]

VGS [V]

0 20 40 600

2

4

6

8

10

12

8 V32 V

20 V

VGS=f(Qgate);ID=50Apulsed;parameter:VDD

Diagram15:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-60 -20 20 60 100 14030

32

34

36

38

40

42

44

46

VBR(DSS)=f(Tj);ID=1mA

Gate charge waveforms

10



5PackageOutlines

Figure1OutlineTDSON-8FL,dimensionsinmm/inches

11



Figure2OutlineFootprint(TDSON-8FL)

12



Figure3OutlineTape(TDSON-8FL)

13



RevisionHistoryBSC014N04LS

Revision:2016-05-04,Rev.2.4

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2012-10-11 Release of final version

2.1 2012-10-12 New diagram titles.

2.2 2013-02-27 Rev. 2.1

2.4 2016-05-04 Update footnotes and insert max values

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MOSFET - docs.rs-online.com · 3 OptiMOSTM Power-MOSFET, 40 V BSC014N04LS Final Data Sheet Rev. 2.4, 2016-05-04 1 Maximum ratings at TA=25 °C, unless otherwise specified Table 2